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1. 发明专利

JP2014072288A Method for manufacturing solar cell and solar cell 审中-公开
标题翻译：制造太阳能电池和太阳能电池的方法
公开(公告)号：JP2014072288A
公开(公告)日：2014-04-21
申请号：JP2012215859
申请日：2012-09-28
申请人： Sharp Corp , シャープ株式会社
发明人： YASUFUKU KIYOSHI , HIGUCHI KAORU , TAKEDA NAOKI , OKAMOTO NAOKO
IPC分类号： H01L31/06
CPC分类号： Y02E10/50
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a solar cell capable of simplifying a manufacturing step of the solar cell, reducing a manufacturing cost of the solar cell, and further achieving high conversion efficiency, and to provide a solar cell.SOLUTION: A method for manufacturing a solar cell patterns a diffusion prevention mask layer 3 by irradiating the layer with a short pulse laser beam having a pulse width of not more than 100 ps.
摘要翻译：要解决的问题：提供一种能够简化太阳能电池的制造步骤的太阳能电池的制造方法，降低太阳能电池的制造成本，进一步实现高转换效率，并提供太阳能电池。解决方案：太阳能电池的制造方法通过用脉冲宽度不大于100ps的短脉冲激光束照射该层来图案化扩散防止掩模层3。

2. 发明专利

JP2007333640A Apparatus and method for measuring semiconductor electrical characteristic 审中-公开
标题翻译：测量半导体电气特性的装置和方法
公开(公告)号：JP2007333640A
公开(公告)日：2007-12-27
申请号：JP2006167755
申请日：2006-06-16
申请人： Sharp Corp , シャープ株式会社
发明人： OKAMOTO NAOKO , SHIGEYAMA YOSHITAKE , YAMAMOTO TATSUSHI , MURAKAMI SHINZO , KAKIMOTO NORIKO
IPC分类号： G01N21/00 , G01N21/35 , G01N21/3586 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To provide an apparatus for measuring semiconductor electrical characteristics that not only computes the lifetime and diffusion length of carriers but also measures electrical characteristics of semiconductors, such as the mobility of carriers, directly without requiring high time resolution and advanced arithmetic functions. SOLUTION: The apparatus for measuring semiconductor electrical characteristics comprises an excitation light irradiation means for exciting carriers with excitation light on the obverse of a semiconductor sample, an electric field application means for applying an electric field to a region including the entire area irradiated with the excitation light such that the electric field is oriented in one direction in the region, an observation light irradiation means for irradiating the region including the entire area irradiated with the excitation light or the reverse of the semiconductor corresponding to the region with observation light, a light receiving means for receiving reflected light or transmitted light of the observation light reflected by or transmitted through the semiconductor, and a control means for controlling each means. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于测量半导体电气特性的装置，其不仅计算载流子的寿命和扩散长度，而且还直接测量半导体的电特性，例如载流子的迁移率，而不需要高时间分辨率，高级算术功能。解决方案：用于测量半导体电气特性的装置包括：激发光照射装置，用于激发具有在半导体样品正面上的激发光的载流子;电场施加装置，用于将电场施加到包括整个区域照射的区域利用激发光使得电场在该区域中沿一个方向取向;观察光照射装置，用于照射具有用激发光照射的整个区域的区域或者与对应于具有观察光的区域的半导体相反的区域，用于接收由半导体反射或透射的观察光的反射光或透射光的光接收装置，以及用于控制每个装置的控制装置。版权所有（C）2008，JPO＆INPIT

3. 发明专利

JP2006080192A Plasma processor 审中-公开
标题翻译：等离子体处理器
公开(公告)号：JP2006080192A
公开(公告)日：2006-03-23
申请号：JP2004260677
申请日：2004-09-08
申请人： Sharp Corp , シャープ株式会社
发明人： OKI KAZUKI , OKAMOTO NAOKO , NAKAMURA TSUNEO
IPC分类号： H01L21/31 , C23C16/509 , H05H1/46
摘要： PROBLEM TO BE SOLVED: To provide a plasma processor capable of obtaining a desired field-strength distribution by properly controlling a field strength even when the field-strength distribution is changed in a processing chamber by the effect or the like of standing waves. SOLUTION: The plasma processor has the processing chamber 12 in which a substrate to be processed 4 is arranged, and a plasma-discharge generator being mounted in the processing chamber 12 and generating a plasma for plasma-processing the substrate to be processed 4. The plasma-discharge generator has anode electrodes containing a plurality of rod-shaped electrodes 2b extended in a striped shape in the parallel direction with the processing surface of the substrate to be processed 4 and plate-shaped cathode electrodes 2a arranged at intervals at places opposed to the anode electrodes. The field-strength distribution in the processing chamber 12 is adjusted by making the widths of the rod-shaped electrodes 2b and spaces among the rod-shaped electrodes 2b differ. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：解决的问题：提供一种能够通过适当地控制场强来获得期望的场强分布的等离子体处理器，即使当通过驻波的效果等在处理室中改变场强分布时。解决方案：等离子体处理器具有处理室12，其中布置有待处理的基板4，等离子体放电发生器安装在处理室12中，并产生等离子体，用于等离子体处理待处理的基板等离子体放电发生器具有阳极电极，该阳极电极包含与待处理基板4的处理面平行的条状延伸的多个棒状电极2b和间隔排列的板状阴极电极2a 与阳极电极相对的位置。通过使棒状电极2b的宽度和棒状电极2b之间的间隔不同，调整处理室12的场强分布。版权所有（C）2006，JPO＆NCIPI

4. 发明专利

JP2013191444A Ion generator 审中-公开
标题翻译：离子发生器
公开(公告)号：JP2013191444A
公开(公告)日：2013-09-26
申请号：JP2012057554
申请日：2012-03-14
申请人： Sharp Corp , シャープ株式会社
发明人： KAWAI MASANORI , SHIMIZU KAZUHISA , SHIROYAMA YASUHISA , OKAMOTO NAOKO
IPC分类号： H01T23/00 , H01T19/04
摘要： PROBLEM TO BE SOLVED: To provide an ion generator which can spread ions sufficiently to the external space.SOLUTION: An ion generator 1 includes an ion generation element 2 having a discharge electrode 21 and an induction electrode 22 and generating ions, and a duct 3 having an ion outlet 3b at one end and leading the ions generated by the ion generation element 2 to the ion outlet 3b. The duct 3 has a dielectric layer 31 (first dielectric layer), a metal layer 32 (first metal layer), a dielectric layer 33 (second dielectric layer), and a metal layer 34 (second metal layer) in the order from an inner wall side to the outer wall side. Outer surface of the duct 3 is formed of the metal layer 34, the metal layer 32 is connected with a voltage application device 6 for applying a voltage, and the metal layer 34 is set to the ground potential.
摘要翻译：要解决的问题：提供一种可以将离子充分扩散到外部空间的离子发生器。解决方案：离子发生器1包括具有放电电极21和感应电极22并产生离子的离子发生元件2和导管3 在一端具有离子出口3b并将由离子产生元件2产生的离子引导到离子出口3b。导管3具有介电层31（第一介电层），金属层32（第一金属层），电介质层33（第二电介质层）和金属层34（第二金属层）墙侧到外墙一侧。管道3的外表面由金属层34形成，金属层32与施加电压的施加电压装置6连接，金属层34被设定为接地电位。

5. 发明专利

JP2013165006A Ion generating element and ion generator provided with same 审中-公开
标题翻译：离子发生元件和离子发生器同时提供
公开(公告)号：JP2013165006A
公开(公告)日：2013-08-22
申请号：JP2012027988
申请日：2012-02-13
申请人： Sharp Corp , シャープ株式会社
发明人： SHIROYAMA YASUHISA , SHIMIZU KAZUHISA , OKAMOTO NAOKO , KAWAI MASANORI , EZAKI TETSUYA
IPC分类号： H01T19/04 , H01T23/00 , H05F3/04
CPC分类号： H01T19/04 , H01T23/00
摘要： PROBLEM TO BE SOLVED: To achieve: an ion generating element including an electrode arranged in such a manner that generated ions are not easily absorbed by the electrode and capable of preferentially generating either positive or negative ions; and an ion generator provided with the ion generating element.SOLUTION: An ion generating element of the present invention includes a linear first electrode 3 and a linear second electrode 4 that generate ions by a corona discharge. The first electrode 3 and the second electrode 4 preferentially generate either positive or negative ions.
摘要翻译：要解决的问题：为了实现：一种离子发生元件，其包括以使得所生成的离子不容易被电极吸收并能够优先产生正离子或负离子的方式布置的电极; 和具有离子产生元件的离子发生器。本发明的离子发生元件包括通过电晕放电产生离子的线性第一电极3和线性第二电极4。第一电极3和第二电极4优先产生正离子或负离子。

6. 发明专利

JP2004119781A Dry etching method 审中-公开
公开(公告)号：JP2004119781A
公开(公告)日：2004-04-15
申请号：JP2002282572
申请日：2002-09-27
申请人： Sharp Corp , シャープ株式会社
发明人： HAYASHI HIDEKAZU , YAMAMOTO TATSUSHI , TADERA TAKAMITSU , OKAMOTO NAOKO , KANETSUKI RITSUO
IPC分类号： H01L21/28 , H01L21/3065 , H01L21/3213
摘要： PROBLEM TO BE SOLVED: To provide an etching method of large etching selectivity of a high melting point metallic film to a silicon oxide film as a substrate without generating side etching in etching of a high melting point metallic film wherein a silicon compound film is a substrate film.
SOLUTION: In the dry etching method, at least SF
6 , Cl
2 , O
2 are used as etching gas and the flow rate between SF
6 and Cl
2 is SF
6 :Cl
2 =1:1 to 2:1, the flow rate of O
2 to the total flow is 30% to 40% and a high melting point metallic compound film 13, wherein a silicon compound film 12 is a substrate film, is used as an etching object. It is preferable that the etching gas is excited by using microwave.
COPYRIGHT: (C)2004,JPO

7. 发明专利

JP2013165034A Ion generator 审中-公开
标题翻译：离子发生器
公开(公告)号：JP2013165034A
公开(公告)日：2013-08-22
申请号：JP2012028455
申请日：2012-02-13
申请人： Sharp Corp , シャープ株式会社
发明人： SHIROYAMA YASUHISA , SHIMIZU KAZUHISA , OKAMOTO NAOKO , KAWAI MASANORI , EZAKI TETSUYA
IPC分类号： H01T19/04 , H01T23/00 , H05F3/04
CPC分类号： H01T23/00
摘要： PROBLEM TO BE SOLVED: To extend the life of an electrode in an ion generator and reduce the amount of dust and fine particles which may be attached or accumulated.SOLUTION: An ion generator includes an ion generating element that generates ions by generating a corona discharge between a first needle electrode and a second needle electrode. The ion generator alternately switches between a state where positive ions are generated by the ion generating element by using the first needle electrode as a discharge electrode and using the second needle electrode as an induction electrode, and a state where negative ions are generated by the ion generating element by using the second needle electrode as a discharge electrode and using the first needle electrode as an induction electrode.
摘要翻译：要解决的问题：延长离子发生器中电极的寿命，并减少可能附着或积聚的灰尘和细颗粒的数量。解决方案：离子发生器包括通过产生电晕放电产生离子的离子产生元件在第一针状电极和第二针状电极之间。离子发生器通过使用第一针电极作为放电电极并且使用第二针电极作为感应电极交替地在离子产生元件产生正离子的状态之间切换，并且通过离子产生负离子的状态通过使用第二针状电极作为放电电极，并使用第一针状电极作为感应电极。

8. 发明专利

JP2006041443A Plasma processor, and manufacturing method of electronic device 审中-公开
标题翻译：等离子体处理器和电子设备的制造方法
公开(公告)号：JP2006041443A
公开(公告)日：2006-02-09
申请号：JP2004223401
申请日：2004-07-30
申请人： Sharp Corp , シャープ株式会社
发明人： OKAMOTO NAOKO , NAKAMURA TSUNEO , OKI KAZUKI
IPC分类号： H01L21/31 , C23C16/505 , H01L21/205 , H01L21/3065 , H05H1/46
摘要： PROBLEM TO BE SOLVED: To provide a plasma processor capable of manufacturing a high quality electronic device by reducing damage by plasma and accelerating decomposition and dissociation of a gas, and a manufacturing method of the electronic device through the use of the plasma processor. SOLUTION: The plasma processor includes a processing chamber 1 having a substrate 4 to be processed placed inside, a gas inlet 7 for introducing a gas into the processing chamber 1, and a plasma generating part provided inside the processing chamber 1 for applying plasma processing to the substrate 4. The plasma generating part has a ladder-like or lattice-like anode electrode 3 and a cathode electrode 2 having a plurality of gas inlets 7 on the same side with respect to the substrate 4, and a dielectric 6 between the cathode electrode 2 and the anode electrode 3. The cathode electrode 2, the dielectric 6 and the anode electrode 3 are placed vertically on a processed surface 4a of the substrate 4. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：解决的问题：提供一种能够通过减少等离子体的损害并加速气体的分解和解离来制造高质量的电子器件的等离子体处理器，以及通过使用等离子体处理器的电子器件的制造方法。解决方案：等离子体处理器包括处理室1，其具有待处理的基板4，用于将气体引入处理室1的气体入口7和设置在处理室1内的等离子体产生部件对基板4进行等离子体处理。等离子体产生部件具有梯状或格子状的阳极电极3和在相对于基板4具有多个气体入口7的阴极电极2和电介质6 在阴极电极2和阳极电极3之间。阴极电极2，电介质6和阳极电极3垂直放置在基板4的处理表面4a上。（C）2006年，JPO＆NCIPI

9. 发明专利

JP2009188334A Plasma treatment apparatus 审中-公开
标题翻译：等离子体处理装置
公开(公告)号：JP2009188334A
公开(公告)日：2009-08-20
申请号：JP2008029239
申请日：2008-02-08
申请人： Sharp Corp , シャープ株式会社
发明人： KITAMURA SHUICHI , MURAKAMI KOJI , OKAMOTO NAOKO
IPC分类号： H01L21/3065 , B08B7/00 , C08J7/00 , C23C16/455 , C23C16/513 , C23C16/54 , H05H1/24
摘要： PROBLEM TO BE SOLVED: To provide a plasma treatment apparatus capable of showing high treatment performance and reducing an amount of a treatment gas to be used. SOLUTION: The plasma treatment apparatus includes a box having a carry-in port and a carry-out port for a substrate to be treated, a plasma treatment part formed in the box and generating plasma to treat the substrate to be treated, a carry-in passage connecting the carry-in port and the plasma treatment part, a carry-out passage connecting the plasma treatment part and the carry-out port, a transport part for transporting the substrate to be treated through the carry-in passage and the carry-out passage, a suction part having a suction port exposed at least to the carry-in passage and the carry-out passage to suck gas from the plasma treatment part, a plurality of pairs of counter electrodes provided to the plasma treatment part and arranged in the direction of transporting the substrate to be treated, a treatment gas blowing part formed at the plasma treatment part and supplying the treatment gas between the counter electrodes, and a setting part for setting the amount of the treatment gas supplied from the treatment gas blowing part. The setting part sets the supply amount of the treatment gas so as to be smaller for the treatment gas blowing part closer to the suction port. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够显示高处理性能并减少待使用的处理气体量的等离子体处理装置。解决方案：等离子体处理装置包括具有用于待处理的基板的进入端口和进出口的箱体，形成在箱中并产生等离子体以处理待处理的基板的等离子体处理部件，连接输入口和等离子体处理部的输入通路，连接等离子体处理部和进出口的输出通路，输送部，其通过输入通路输送被处理基板所述输出通道，具有至少暴露于所述输入通道的吸入口和所述输出通道的吸入部件，以从所述等离子体处理部吸入气体;多个对对电极，其设置于所述等离子体处理部分地沿着输送待处理基板的方向排列，形成在等离子体处理部分处并在对置电极之间供应处理气体的处理气体吹送部分和用于设定处理气体量的设定部分从处理气体吹送部供给的气体。设置部分使处理气体的供给量对于靠近吸入口的处理气体吹送部分设定得较小。版权所有（C）2009，JPO＆INPIT

10. 发明专利

JP2007318037A Plasma processing apparatus 审中-公开
标题翻译：等离子体加工设备
公开(公告)号：JP2007318037A
公开(公告)日：2007-12-06
申请号：JP2006148633
申请日：2006-05-29
申请人： Sharp Corp , シャープ株式会社
发明人： TANAKA YASUHIRO , YAMAMOTO TATSUSHI , TAKAHASHI DAISUKE , OKAMOTO NAOKO
IPC分类号： H01L21/3065 , C23C16/505 , C23C16/54 , H01L21/304 , H05H1/24
摘要： PROBLEM TO BE SOLVED: To improve the efficiency of atmospheric-pressure plasma processing without installing an extra apparatus by maintaining a gas atmosphere nearby plasma processors. SOLUTION: The apparatus includes the plasma processors 5a and 5b which plasma-process a work 1, a conveying mechanism 2 which moves the plasma processors 5a and 5b relatively to the work 1, and gas curtain mechanisms 3a and 3b, and 3c and 3d provided on work entrance sides and work exit sides of the plasma processors 5a and 5b, respectively. At least, the gas curtain mechanisms 3a and 3b are blown out on the entrance sides for the work 1 blow out gas capable of heating the work 1. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：为了提高大气压等离子体处理的效率，而不需要通过维持等离子体处理器附近的气氛来安装额外的装置。解决方案：该装置包括等离子体处理工件1的等离子体处理器5a和5b，相对于工件1移动等离子体处理器5a和5b的输送机构2以及气幕机构3a和3b以及3c 和3d分别设置在等离子体处理器5a和5b的工作入口侧和工作出口侧。至少，气帘机构3a和3b在入口侧吹出，用于工件1吹出能够加热工件1的气体。版权所有（C）2008，JPO＆INPIT

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