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1. 发明专利

JP2012256924A Rod shaped structure light emitting element, back light, lighting device, and display device 有权
标题翻译： ROD型结构发光元件，背光，照明装置和显示装置
公开(公告)号：JP2012256924A
公开(公告)日：2012-12-27
申请号：JP2012178503
申请日：2012-08-10
申请人： Sharp Corp , シャープ株式会社
发明人： MORISHITA SATOSHI , NEGISHI SATORU , KOMIYA KENJI , SHIBATA AKIHIDE , IWATA HIROSHI , TAKAHASHI AKIRA
IPC分类号： H01L33/20
摘要： PROBLEM TO BE SOLVED: To provide a fine rod shaped light emitting element which enables easy electrode connection with a simple structure and achieves high luminous efficiency.SOLUTION: A rod shaped structure light emitting element includes: a semiconductor core 11 formed by a rod shaped n type GaN having a circular cross section; and a semiconductor layer 12 formed by a p type GaN so as to cover a part of the semiconductor core 11. A part of an outer peripheral surface of the semiconductor core 11 is exposed. One electrode is connected with an exposed portion 11a and an electrode is connected with the semiconductor layer 12 on the other end side of the semiconductor core 11. The structure allows the electrodes to be connected with both ends thereof in a separate manner and thereby preventing short circuits.
摘要翻译：要解决的问题：提供一种细棒形发光元件，其能够以简单的结构容易地进行电极连接并且实现高发光效率。解决方案：棒状结构发光元件包括：由具有圆形横截面的棒状n型GaN形成的半导体芯11; 以及由p型GaN形成以覆盖半导体芯11的一部分的半导体层12.半导体芯11的外周面的一部分露出。一个电极与露出部11a连接，电极与半导体芯11的另一端侧的半导体层12连接。该结构允许电极以其分开的方式与其两端连接，从而防止短路电路。版权所有（C）2013，JPO＆INPIT

2. 发明专利

JP2011109050A Light emitting element with bar-like structure, method of manufacturing the same, backlight, illumination device and display device 有权
标题翻译：具有棒状结构的发光元件，其制造方法，背光，照明装置和显示装置
公开(公告)号：JP2011109050A
公开(公告)日：2011-06-02
申请号：JP2009275548
申请日：2009-12-03
申请人： Sharp Corp , シャープ株式会社
发明人： MORISHITA SATOSHI , NEGISHI SATORU , KOMIYA KENJI , SHIBATA AKIHIDE , IWATA HIROSHI , TAKAHASHI AKIRA
IPC分类号： H01L33/24 , H01L33/32
摘要： PROBLEM TO BE SOLVED: To provide a light emitting element with a fine bar-like structure, having high efficiency of light emission and facilitating connection of an electrode while using a simple configuration. SOLUTION: The light emitting element includes: a semiconductor core 11 made of a bar-like n-type GaN having a circular cross section, and a semiconductor layer 12 made of a p-type GaN formed so as to cover part of the semiconductor core 11. The outer peripheral surface of the part of the semiconductor core 11 is exposed. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：为了提供具有细棒状结构的发光元件，其具有高效率的发光并且便于使用简单配置的电极的连接。解决方案：发光元件包括：由具有圆形横截面的棒状n型GaN制成的半导体芯11和由p型GaN制成的半导体层12，其形成为覆盖部分半导体芯11的一部分的外周面露出。版权所有（C）2011，JPO＆INPIT

3. 发明专利

JP2011100832A Method for disposing micro element, micro element mount body, and display device 审中-公开
标题翻译：处理微元件，微元件安装体和显示装置的方法
公开(公告)号：JP2011100832A
公开(公告)日：2011-05-19
申请号：JP2009254101
申请日：2009-11-05
申请人： Sharp Corp , シャープ株式会社
发明人： MORISHITA SATOSHI , ONISHI HITOSHI , IWATA HIROSHI
IPC分类号： H01L33/48
CPC分类号： H01L24/95 , H01L2224/95136 , H01L2924/12041 , H01L2924/14 , H01L2924/15788 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a method for disposing a micro element, efficiently and quickly disposing the micro element on a substrate. SOLUTION: A method for disposing a micro element has: disposing a substrate 6 facing a flow path 1, introducing liquid 2 on the substrate 6 and in the flow path 1; disposing micro elements 5a, 5b, and 5c so as to contact with a meniscus 7 formed on the upper surface of the liquid 2; moving the micro elements 5a, 5b, and 5c to the specific place of the meniscus 7; excluding the liquid 2 between the micro elements 5a, 5b, and 5c and the substrate 6; and disposing the micro elements 5a, 5b, and 5c on the substrate 6. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种微元件的设置方法，有效且快速地将微元件设置在基板上。解决方案：用于设置微元件的方法具有：设置面向流路1的基板6，将液体2引入基板6和流路1中; 设置微元件5a，5b和5c，以便与形成在液体2的上表面上的弯液面7接触; 将微元件5a，5b和5c移动到弯液面7的特定位置; 排除微元件5a，5b，5c与基板6之间的液体2; 并将微元件5a，5b和5c布置在基板6上。版权所有：（C）2011，JPO＆INPIT

4. 发明专利

JP2011086758A Light-emitting device and method of manufacturing the same 有权
标题翻译：发光装置及其制造方法
公开(公告)号：JP2011086758A
公开(公告)日：2011-04-28
申请号：JP2009238224
申请日：2009-10-15
申请人： Sharp Corp , シャープ株式会社
发明人： SHIBATA AKIHIDE , NEGISHI SATORU , MORISHITA SATOSHI , KOMIYA KENJI , IWATA HIROSHI , TAKAHASHI AKIRA
IPC分类号： H01L33/36 , F21V23/00
摘要： PROBLEM TO BE SOLVED: To provide a light-emitting device capable of normally emitting a light, even if the direction of the light-emitting element is interchanged with respect to relevant electrodes capable of suppressing the manufacturing cost, and to provide a method for manufacturing the device. SOLUTION: In a filament-shaped light-emitting element 5 of the light-emitting device, a P-type first region 6 and a P-type third region 8 are respectively arranged on both sides of an N-type second region 7. Accordingly, even if respective connections of the first and third regions 6, 8 of the filament-shaped light-emitting element 5 to a first and third electrodes 1, 3 are interchanged, since respective diode polarities with respect to the first and third electrodes 1, 3 are not interchanged, normal light emission becomes possible. Hence, the manufacturing process is allowed to have respective connections of the first and third regions 6, 8 to the first and third electrodes 1, 3 exchanged; and even if the connections become opposite, neither the mark nor the shape for identifying the direction of the filament-shaped light-emitting element 5 becomes necessary, and the manufacturing process can be simplified and the manufacturing cost is suppressed. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：即使发光元件的方向相对于能够抑制制造成本的相关电极互换，也能够提供能够正常发光的发光装置，并且提供一种制造装置的方法。解决方案：在发光装置的灯丝状发光元件5中，分别在P型第一区域6和P型第三区域8的N侧第二区域因此，即使灯丝状发光元件5的第一和第三区域6,8与第一和第三电极1,3的各个连接互换，因为相对于第一和第三电极1,3的二极管极性电极1,3不互换，正常发光成为可能。因此，允许制造工艺具有第一和第三区域6,8相互连接的第一和第三电极1,3的交换; 并且即使连接变得相反，也不需要用于识别丝状发光元件5的方向的标记和形状，并且可以简化制造工艺并且抑制制造成本。版权所有（C）2011，JPO＆INPIT

5. 发明专利

JP2007214110A Fuel cell 有权
标题翻译：燃料电池
公开(公告)号：JP2007214110A
公开(公告)日：2007-08-23
申请号：JP2006318569
申请日：2006-11-27
申请人： Sharp Corp , シャープ株式会社
发明人： MORISHITA SATOSHI
IPC分类号： H01M8/04 , H01M4/86 , H01M8/10 , H01M8/24
CPC分类号： H01M8/1011 , H01M8/04089 , H01M8/0662 , H01M8/2455 , Y02E60/523
摘要： PROBLEM TO BE SOLVED: To provide a fuel cell in which exhaust gas from a fuel electrode side and an oxidant electrode side can be efficiently exhausted and which, while being smaller in size, can improve a power density per volume.
SOLUTION: In the fuel cell, an exhaust passage 21, provided outside of an area of unit cells 15-1, 15-2, etc. serves to put together and exhaust an exhaust gas from an oxidant electrode 12 of the unit cell 15-1 and an exhaust gas from the fuel electrode 11 of the unit cell 15-2. Namely, the oxidant electrode 12 of the unit cell 15-1 and the fuel electrode 11 of the unit cell 15-2 use one exhaust passage 21 together. Therefore, by using a flow of the exhaust gas from the oxidant electrode 12, the exhaust gas from the side of the fuel electrode 11 can be exhausted efficiently.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种燃料电池，其中可以有效地排出来自燃料电极侧和氧化剂电极侧的废气，并且其尺寸越小，可以提高每体积的功率密度。解决方案：在燃料电池中，设置在单元电池15-1,15-2等的区域外的排气通道21用于将来自单元的氧化剂电极12的废气放在一起排出电池15-1和来自电池单元15-2的燃料电极11的废气。也就是说，单电池15-1的氧化剂电极12和单电池15-2的燃料电极11一起使用一个排气通道21。因此，通过使用来自氧化剂电极12的废气的流动，可以有效地排出来自燃料极11一侧的废气。版权所有（C）2007，JPO＆INPIT

6. 发明专利

JP2007165287A Fuel cell 有权
标题翻译：燃料电池
公开(公告)号：JP2007165287A
公开(公告)日：2007-06-28
申请号：JP2006277876
申请日：2006-10-11
申请人： Sharp Corp , シャープ株式会社
发明人： MORISHITA SATOSHI
IPC分类号： H01M8/02 , H01M8/04 , H01M8/10
CPC分类号： H01M8/0265 , H01M8/0258 , H01M8/0263 , H01M8/04186 , H01M8/1011 , H01M8/241 , Y02E60/523
摘要： PROBLEM TO BE SOLVED: To provide a small and high-output fuel cell capable of providing sufficient reaction in a fuel electrode even when pressure for supplying fuel is low. SOLUTION: This fuel cell has a structure that an area of an opening at which a first flow passage 13 opens toward a diffusion layer 17 side of a fuel electrode 1 is smaller than an area of an opening at which a second flow passage 15 opens toward the diffusion layer 17 side. This structure serves as a supply suppression structure for suppressing supply of liquid fuel from the first flow passage 13 to the diffusion layer 17 of the fuel electrode 1, and a discharge acceleration structure for accelerating discharge of discharge gas from the second flow passage 15. As compared with the case where the opening area of the first flow passage 13 and the opening area of the second flow passage 15 are equal to each other, the supply of liquid fuel from the first flow passage 13 to the diffusion layer 17 is suppressed, so that the liquid fuel is more easily filled in the first flow passage 13. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：即使在供给燃料的压力低的情况下，也能够提供能够在燃料电极中提供足够的反应的小而高输出的燃料电池。解决方案：该燃料电池具有第一流路13朝向燃料电极1的扩散层17侧开口的开口面积小于第二流路的开口面积的结构 15朝向扩散层17侧开口。该结构是用于抑制从第一流路13向燃料电极1的扩散层17供给液体燃料的供给抑制结构，以及用于加速从第二流路15排出放电气体的放电加速结构。作为与第一流路13的开口面积和第二流路15的开口面积相等的情况相比，能够抑制从第一流路13到扩散层17的液体燃料的供给，所以液体燃料更容易地被填充在第一流路13中。版权所有：（C）2007，JPO＆INPIT

7. 发明专利

JP2006190594A Micro-contact switching device and wireless communication device 有权
标题翻译：微接触开关装置和无线通信装置
公开(公告)号：JP2006190594A
公开(公告)日：2006-07-20
申请号：JP2005002260
申请日：2005-01-07
申请人： Sharp Corp , シャープ株式会社
发明人： MORISHITA SATOSHI
IPC分类号： H01H3/06 , B81B3/00 , H01H59/00 , H01P1/12
摘要： PROBLEM TO BE SOLVED: To provide a micro-contact switching device capable of preventing contacts from becoming unable to separate due to mutual adhesion even if the number of switching is increased, which can be mounted on a base plate as a part of an integrated circuit, and provide a wireless communication device.
SOLUTION: A micro-movable part 19 is supported by two fulcrum parts (end part 27a, 27b) of a supporting part when the micro-movable part 19 is not driven by driving mechanisms 20, 16. When making a movable contact part 21 contact a fixed contact 14, or when making a movable contact part 11 contact a fixed contact 15 by driving the micro-movable part 19 by the driving mechanisms 20, 16, the micro-movable part 19 is supported by an end part 27a or 27b of the supporting part 12, and the other end part 27a or 27b of the supporting part 12 is separated from the micro-movable part 19.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：解决的问题：提供一种微接触开关装置，其能够防止由于相互粘附而导致的接触不能分离，即使增加开关次数，其可以安装在基板上作为部分集成电路，并提供无线通信设备。解决方案：当微型可移动部件19不被驱动机构20,16驱动时，微型可移动部件19由支撑部件的两个支点部分（端部27a，27b）支撑。当制造可动触点部分21接触固定触点14，或者当通过驱动机构20,16驱动微型可移动部分19而使可动触头部分11接触固定触头15时，微型可动部件19由端部部分27a 或27b，支撑部分12的另一端部27a或27b与微动部分19分离。（C）2006年，JPO＆NCIPI

8. 发明专利

JP2005340579A Semiconductor device, semiconductor manufacturing method, semiconductor manufacturing device and portable information console unit 审中-公开
标题翻译：半导体器件，半导体制造方法，半导体制造设备和便携式信息控制单元
公开(公告)号：JP2005340579A
公开(公告)日：2005-12-08
申请号：JP2004158905
申请日：2004-05-28
申请人： Sharp Corp , シャープ株式会社
发明人： YOSHIOKA FUMIYOSHI , NAKANO MASAYUKI , MORISHITA SATOSHI , KAKIMOTO SEIZO
IPC分类号： H01L21/3065 , H01L21/76 , H01L21/8234 , H01L27/08 , H01L27/088 , H01L29/78 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device which achieves low power consumption operation and high speed operation by reducing the parasitic capacity of a diffusion layer.
SOLUTION: An element separating region 9 is formed in an oblique direction with respect to the surface of the diffusion layer 14 in this semiconductor device whereby a connecting area between the diffusion layer 14 and a well region 8 is reduced, thereby reducing the parasitic capacity.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种通过减小扩散层的寄生电容来实现低功耗操作和高速操作的半导体器件。解决方案：在该半导体器件中，相对于扩散层14的表面在倾斜方向上形成元件分离区域9，由此减小扩散层14和阱区域8之间的连接区域，从而减少寄生能力。版权所有（C）2006，JPO＆NCIPI

9. 发明专利

JP2004207379A Semiconductor device and its manufacturing method 有权
公开(公告)号：JP2004207379A
公开(公告)日：2004-07-22
申请号：JP2002372738
申请日：2002-12-24
申请人： Sharp Corp , シャープ株式会社
发明人： KAKIMOTO SEIZO , NAKANO MASAYUKI , MORISHITA SATOSHI , KAWASHIMA KENJI
IPC分类号： H01L29/417 , H01L21/3205 , H01L21/8238 , H01L27/092 , H01L29/78
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device, specifically a dynamic threshold operation transistor (DTMOS), which is simple in structure and can be reduced in connection resistance between a gate electrode and a well without causing disconnection, and can obtain a high and stable driving force and can be reduced in capacity in connection with source/drain regions and in junction capacitance in the source/drain regions even if the device is reduced in size, and also to provide a method of manufacturing the same. SOLUTION: In a contact region 120 which connects the gate electrode 106 and a shallow well region 104, a contact conductor 115 is so formed as to be stretched over the gate electrode 106 and the contact region 120. In the source/drain regions 131 and 132, source/drain conductors 155 are so formed as to be stretched over the source/drain regions 131 and 132 and an element isolation region 102. COPYRIGHT: (C)2004,JPO&NCIPI

10. 发明专利

JP2013258259A Nitride semiconductor device 有权
标题翻译：氮化物半导体器件
公开(公告)号：JP2013258259A
公开(公告)日：2013-12-26
申请号：JP2012133008
申请日：2012-06-12
申请人： Sharp Corp , シャープ株式会社
发明人： KURITA DAISUKE , MORISHITA SATOSHI , FUJITA KOICHIRO
IPC分类号： H01L21/28 , H01L21/285 , H01L21/338 , H01L29/778 , H01L29/812
摘要： PROBLEM TO BE SOLVED: To provide a nitride semiconductor device in which contact resistance between a nitride semiconductor layer and an ohmic electrode can be reduced.SOLUTION: In a GaN HFET, recessed parts 106, 109 are formed in a nitride semiconductor laminate 20 comprising an undoped GaN layer 1 and an undoped AlGaN layer 2 which are formed on an Si substrate 10, and ohmic electrodes (a source electrode 11 and a drain electrode 12) are formed in the recessed parts 106, 109. An oxygen concentration of a first oxygen concentration peak in the vicinity of an interface S1 between the ohmic electrodes comprising a TiAl-based material and the GaN layer 1 is in the range of 1.1×10cm-6.8×10cm, and a chlorine concentration of a first chlorine concentration peak in the vicinity of the interface S1 is in the range of 5.0×10cm-9.6×10cm.
摘要翻译：要解决的问题：提供可以降低氮化物半导体层和欧姆电极之间的接触电阻的氮化物半导体器件。解决方案：在GaN HFET中，凹部106,109形成在氮化物半导体层叠体20中，未掺杂的GaN层1和形成在Si衬底10上的未掺杂的AlGaN层2以及欧姆电极（源电极11和漏电极12）形成在凹陷部分106,109中。第一氧的浓度包含TiAl基材料的欧姆电极和GaN层1之间的界面S1附近的浓度峰值在1.1×10cm-6.8×10cm的范围内，附近的第一氯浓度峰值的氯浓度界面S1的范围在5.0×10cm-9.6×10cm的范围内。

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