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1. 发明专利

JP2012251025A Water-containing cutting fluid composition and method for producing the same 审中-公开
标题翻译：含水切削液组合物及其制造方法
公开(公告)号：JP2012251025A
公开(公告)日：2012-12-20
申请号：JP2011122871
申请日：2011-05-31
申请人： Sanyo Chem Ind Ltd , 三洋化成工業株式会社
发明人： EJIRI SHOGO , KATSUKAWA YOSHITAKA , YAMASHITA SEIJI
IPC分类号： C10M169/04 , C10M105/14 , C10M129/08 , C10M173/02 , C10N20/00 , C10N20/02 , C10N30/00 , C10N40/22 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To provide a water-containing cutting fluid composition which is excellent in surface accuracy after processing and in detergency in a cutting process of a brittle material by adjusting its viscosity and surface tension to values lower than those of conventional ones, and to provide an industrially useful method for producing a water-containing cutting fluid having such properties.SOLUTION: The water-containing cutting fluid composition (A) contains 20-80 pts.wt. of ethylene glycol (a), 50-120 pts.wt. of diethylene glycol (b), 50-100 pts.wt. of triethylene glycol (c), and 0-80 pts.wt. of polyethylene glycol (d) of a tetramer or higher oligomer of ethylene oxide with respect to 100 pts.wt. of water, has a viscosity of 25 mPa s or less, and has a surface tension of 54-65 mN/m.
摘要翻译：要解决的问题：提供一种含水切削液组合物，其通过将其粘度和表面张力调节到低于常规的粘度和表面张力的值来提供在脆性材料的切割过程中加工后的表面精度和去污力优异的含水切削液组合物并提供了具有这种性质的含水切削液的工业上有用的方法。
解决方案：含水切削液组合物（A）含有20-80重量份的乙二醇（a），50-120重量份的二甘醇（b），50-100重量份的三甘醇（c）和0-80重量份的聚乙二醇（d）相对于100重量份的环氧乙烷的四聚体或更高级的低聚物。的水，粘度为25mPa·s以下，表面张力为54〜65mN / m。版权所有（C）2013，JPO＆INPIT

2. 发明专利

JP2012087297A Water-based cutting fluid for silicon ingot 审中-公开
标题翻译：基于水的硅切割液
公开(公告)号：JP2012087297A
公开(公告)日：2012-05-10
申请号：JP2011206997
申请日：2011-09-22
申请人： Sanyo Chem Ind Ltd , 三洋化成工業株式会社
发明人： ASAMI ARIHIRO , KATSUKAWA YOSHITAKA , KERA TAKURO
IPC分类号： C10M171/02 , C10M105/18 , C10M107/34 , C10N20/00 , C10N30/00 , C10N40/22 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To provide a water-based cutting fluid for silicon ingot, excellent in low foamability in a cutting process of silicon ingots, excellent in cleaning performance in a cleaning process of silicon wafers obtained by cutting, and further bringing an excellent flatness to the silicon wafer after cutting.SOLUTION: The water-based cutting fluid for silicon ingot contains as essential components, water and a polyoxyalkylene compound (A) having HLB of 6 to 20 represented by general formula (1) [wherein R is 1-8C alkyl; m is 1 to 10 of average addition number of moles of ethylene oxide; n is 0 to 5 of that of propylene oxide; m/(m+n) is 0.4 to 1.0; and the addition conditions of ethylene oxide and propylene oxide may be block or random]. The water content of the water-based cutting fluid when in use is 70-99.99 wt.% based on total of the cutting fluid.
摘要翻译：要解决的问题：为了提供一种用于硅锭的水性切削液，在硅锭的切割过程中具有优异的低发泡性，在通过切割获得的硅片的清洁工艺中的清洁性能优异，并且进一步带来切割后硅晶片的平坦度优异。解决方案：用于硅锭的水性切削液含有作为必要成分的水和由通式（1）表示的HLB为6〜20的聚氧化烯化合物（A）[其中R为1-8C烷基; m为环氧乙烷的平均加成摩尔数的1〜10; n为环氧丙烷的0〜5; m /（m + n）为0.4〜1.0; 并且环氧乙烷和环氧丙烷的添加条件可以是嵌段或无规]。使用时的水性切削液的含水量相对于切削液的总量为70-99.99重量％。版权所有（C）2012，JPO＆INPIT

3. 发明专利

JP2011148974A Water soluble cutting fluid for slicing silicon ingot 审中-公开
标题翻译：水溶性切削液，用于切削硅胶
公开(公告)号：JP2011148974A
公开(公告)日：2011-08-04
申请号：JP2010191756
申请日：2010-08-30
申请人： Sanyo Chem Ind Ltd , 三洋化成工業株式会社
发明人： FUKUSHIMA TAKESHI , KATSUKAWA YOSHITAKA , KERA TAKURO , KODAMA AKI
IPC分类号： C10M169/04 , B28D5/04 , C10M105/38 , C10M107/34 , C10M129/36 , C10M129/52 , C10M173/02 , C10N20/00 , C10N30/00 , C10N30/12 , C10N40/22 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To provide a water-soluble cutting fluid improving cutting efficiency in a cutting process on a silicon ingot, since the liquid has anticorrosive property to a metal portion of a wire in a cutting apparatus, compared to a conventional liquid, and having excellent safeness since the liquid suppresses generation of flammable hydrogen from a reaction between water and silicon.
SOLUTION: The water-soluble cutting fluid for slicing a silicon ingot contains, as essential components: a water miscible solvent (A), a polyvalent carboxylic acid (B) having ΔpKa defined by numerical formula (1):ΔpKa=(pKa
2 )-(pKa
1 ) of from 0.9 to 2.3, and water (W), and contains 5-90 wt.% of water and shows a pH of from 4.0 to 7.0. In the formula, pKa
1 is an acid dissociation constant in a dissociation stage noted as 1 where the polyvalent carboxylic acid (B) as an n-protic acid H
n A results in H
n-1 A+H
+ ; and pKa
2 is an acid dissociation constant in a dissociation stage denoted as 2 where the carboxylic acid results in H
n-2 A+H
+ .
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：为了提供在硅锭的切割过程中提高切割效率的水溶性切削液，由于液体对切割装置中的金属丝的金属部分具有防腐性，与常规液体，并且具有优异的安全性，因为液体抑制从水和硅之间的反应产生易燃氢。解决方案：用于切割硅锭的水溶性切削液含有作为必要成分的水溶性溶剂（A），由数值式（1）定义的ΔpKa的多元羧酸（B）：ΔpKa=（ pKa 2 ） - （pKa 1 ）为0.9至2.3，以及水（W），并含有5-90重量％的水， 4.0〜7.0。在该式中，pKa 1是在解离阶段中的酸解离常数，注明为1，其中作为正质子酸H（S）的多价羧酸（B）A结果在H n-1 A + H + 中; 并且pKa 2是解离阶段中的酸解离常数，其表示为2，其中羧酸导致H n-2 A + H + 。版权所有（C）2011，JPO＆INPIT

4. 发明专利

JP2010285612A Detergent for silicon wafer producing process 有权
标题翻译：硅砂生产工艺的洗涤剂
公开(公告)号：JP2010285612A
公开(公告)日：2010-12-24
申请号：JP2010109819
申请日：2010-05-12
申请人： Sanyo Chem Ind Ltd , 三洋化成工業株式会社
发明人： YAMADA YASUHIRO , KATSUKAWA YOSHITAKA , OKAMOTO TAKESHI
IPC分类号： C11D3/37 , C11D1/72 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To provide a detergent for silicon wafer producing processes expressing an excellent detergency to soil on a surface of a silicon wafer without impairing flatness of the silicon wafer in washing after slicing of a silicon ingot. SOLUTION: The detergent for silicon wafer producing processes comprises (A) an anionic surfactant having a weight average molecular weight of 600-200,000, (B) at least one penetrant selected from the group consisting of (B1) alkylene oxide adducts of a higher alcohol and (B2) silicone-based surfactants, and (C) an alkali as the indispensable components. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种在硅晶片的表面上对土壤表现出优异的去污力的硅晶片制造工艺的洗涤剂，而不会在硅锭切割之后在洗涤中削弱硅晶片的平坦度。解决方案：用于硅晶片生产方法的洗涤剂包括（A）重均分子量为600-200,000的阴离子表面活性剂，（B）至少一种选自（B1）的环氧烷加成物的渗透剂，高级醇和（B2）硅氧烷基表面活性剂，和（C）作为不可或缺组分的碱。版权所有（C）2011，JPO＆INPIT

5. 发明专利

JP2010030033A Method of regenerating coolant and method of regenerating slurry 有权
标题翻译：再生冷却剂的方法和再生浆料的方法
公开(公告)号：JP2010030033A
公开(公告)日：2010-02-12
申请号：JP2009146448
申请日：2009-06-19
申请人： Sanyo Chem Ind Ltd , Sharp Corp , シャープ株式会社 , 三洋化成工業株式会社
发明人： KAJIMOTO KIMIHIKO , HOJO YOSHIYUKI , OKUNO TETSUHIRO , YAMADA YASUHIRO , KATSUKAWA YOSHITAKA
IPC分类号： B24B57/02
CPC分类号： B28D5/007 , B24B57/02 , B28D7/02 , Y02P70/179
摘要： PROBLEM TO BE SOLVED: To provide a method of regenerating a coolant that prevents an increase in viscosity of a regenerated slurry.
SOLUTION: The method is a method of regenerating a coolant, comprising subjecting a used slurry discharged in cutting a silicon ingot using a slurry containing abrasives and a water-soluble coolant to at least a distillation step to provide a distilled coolant which is used to provide a regenerated coolant. The distilled coolant contains ≥5 wt.% of water and ≥80 wt.% of propylene glycol.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种再生冷却剂的方法，其防止再生浆料的粘度增加。解决方案：该方法是一种再生冷却剂的方法，包括使用含有研磨剂和水溶性冷却剂的浆料将硅锭切割出来的废浆在至少蒸馏步骤中进行处理，以提供蒸馏的冷却剂，用于提供再生冷却剂。蒸馏的冷却剂含有≥5重量％的水和≥80重量％的丙二醇。版权所有（C）2010，JPO＆INPIT

6. 发明专利

JP2008201990A Detergent builder and detergent 审中-公开
标题翻译：洗涤剂和洗涤剂
公开(公告)号：JP2008201990A
公开(公告)日：2008-09-04
申请号：JP2007042362
申请日：2007-02-22
申请人： Sanyo Chem Ind Ltd , 三洋化成工業株式会社
发明人： KAWAGUCHI KOJI , KATSUKAWA YOSHITAKA , GYOTOKU NAMI
IPC分类号： C11D3/37 , C08F8/30 , C08F20/06
摘要： PROBLEM TO BE SOLVED: To provide a detergent builder and a detergent having good performance for preventing re-fouling, even when a small mount of water is used. SOLUTION: The detergent builder contains a salt of a polymer (A) comprising a carboxyl group-containing monomer (a) with a heterocyclic compound (B) having a basic nitrogen atom. The detergent comprises the builder and a nonionic surfactant (C). COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：即使使用少量的水，也提供具有良好防止再结垢的性能的洗涤剂助洗剂和洗涤剂。解决方案：洗涤剂助洗剂含有含有羧基的单体（a）与具有碱性氮原子的杂环化合物（B）的聚合物（A）的盐。洗涤剂包括助洗剂和非离子表面活性剂（C）。版权所有（C）2008，JPO＆INPIT

7. 发明专利

JP2006205058A Anionic vinyl monomer 审中-公开
标题翻译： ANIONIC VINYL MONOMER
公开(公告)号：JP2006205058A
公开(公告)日：2006-08-10
申请号：JP2005020584
申请日：2005-01-28
申请人： Sanyo Chem Ind Ltd , 三洋化成工業株式会社
发明人： KATSUKAWA YOSHITAKA
IPC分类号： B01F17/42 , B01F17/02 , B01F17/14 , B01F17/22 , B01F17/34 , C08F2/26 , C08F246/00
摘要： PROBLEM TO BE SOLVED: To provide a (poly)oxyalkylene chain-containing anionic vinyl monomer hardly hydrolyzed even if it is stored in a temperature range from a room temperature to 50°C for several months and a vinyl polymer containing the monomer as an indispensable monomer.
SOLUTION: The anionic vinyl monomer is defined as a general formula (1): CH
2 =C(-X)-CH
2 O(AO)
n -Q. The vinyl polymer contains the monomer as an indispensable monomer. In the formula, Q is an anionic group; A is 2-4C alkylene; X is -COOM
1/r , -COOR
1 , -CONR
2 R
3 , or -CN; M is a hydrogen atom or r-valent cationic group; r is 1 or 2; R
1 is a 1-36C hydrocarbon group; R
2 and R
3 independently are hydrogen atoms or 1-6C hydrocarbon groups; and n is an integer of 1 to 200.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：待解决的问题：即使在室温至50℃的温度范围内储存几个月，也提供含（多）含氧亚烷基链的阴离子乙烯基单体几乎不水解，含有单体的乙烯基聚合物作为不可或缺的单体。解决方案：阴离子乙烯基单体定义为通式（1）：CH 2 = C（-X）-CH 2（AO）名词 -Q。乙烯基聚合物含有单体作为不可缺少的单体。在该式中，Q为阴离子基团; A为2-4C亚烷基; X是-COOM 1 / r ，-COOR 1 ，-CONR 2 R 3 或-CN; M为氢原子或r价阳离子基团; r为1或2; R 1 是1-36C烃基; R 2 和R 3 独立地是氢原子或1-6C烃基; n为1〜200的整数。（C）2006，JPO＆NCIPI

8. 发明专利

JP2012214767A Cutting fluid for slicing silicon ingot 审中-公开
标题翻译：切削硅胶切削液
公开(公告)号：JP2012214767A
公开(公告)日：2012-11-08
申请号：JP2012076240
申请日：2012-03-29
申请人： Sanyo Chem Ind Ltd , 三洋化成工業株式会社
发明人： FUKUSHIMA TAKESHI , KATSUKAWA YOSHITAKA , YAMASHITA SEIJI
IPC分类号： C10M169/04 , C10M105/18 , C10M107/34 , C10M129/26 , C10N30/00 , C10N30/04 , C10N40/22
摘要： PROBLEM TO BE SOLVED: To provide a cutting fluid and an abrasive slurry allowing an improvement in cutting work efficiency because dispersibility of abrasive grains and fluidity of the abrasive slurry are better than those of the conventional products, and having excellent productivity of silicon wafers because washing efficiency of the silicon wafers can be improved as a result of excellent washability of the abrasive slurry in a cutting process of silicon ingots.SOLUTION: The cutting fluid for slicing the silicon ingots includes a polyoxyalkylene compound (A) having a number-average molecular weight of 130-500 and an organic acid salt (B) as essential components, and electroconductivity thereof is 1.0-7.0 μS/cm. Furthermore, the abrasive slurry includes the same.
摘要翻译：要解决的问题：提供切削液和磨料浆料，从而提高切削加工效率，因为磨粒的分散性和磨料浆的流动性优于常规产品，并具有优异的硅生产率由于在硅锭的切割过程中磨料浆料的优异的洗涤性能可以提高硅晶片的洗涤效率，所以可以提高晶片。解决方案：用于切割硅锭的切削液包括数均分子量为130-500的聚氧化烯化合物（A）和作为必需组分的有机酸盐（B），其导电率为1.0-7.0 μS/ cm以下。此外，磨料浆料包括其。版权所有（C）2013，JPO＆INPIT

9. 发明专利

JP2012214638A Water-containing cutting fluid composition and method for producing the same 有权
标题翻译：含水切削液组合物及其制造方法
公开(公告)号：JP2012214638A
公开(公告)日：2012-11-08
申请号：JP2011081145
申请日：2011-03-31
申请人： Sanyo Chem Ind Ltd , 三洋化成工業株式会社
发明人： EJIRI SHOGO , KATSUKAWA YOSHITAKA , YAMASHITA SEIJI
IPC分类号： C10M173/02 , B28D5/04 , B28D7/02 , C10M105/14 , C10M105/18 , C10M107/34 , C10M129/16 , C10M145/26 , C10N20/00 , C10N20/02 , C10N30/00 , C10N30/02 , C10N40/22 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To provide a water-containing cutting fluid composition excellent in surface accuracy and detergency after processing by adjusting viscosity and surface tension to be lower than those of conventional ones in the cutting step of a brittle material, and to provide an industrially advantageous method for producing the water-containing cutting fluid having such characteristics.SOLUTION: The water-containing cutting fluid composition comprises 10-120 pts.wt. alkylene glycol (a), 20-240 pts.wt. dialkylene glycol (b), 10-230 pts.wt. trialkylene glycol (c) and 0-120 pts.wt. polyoxyalkylene glycol (d) consisting of ≥4 alkylene oxide units in the content ratio based on 100 pts.wt. water, and has 5-18 mPa s viscosity and 48-54 mN/m surface tension.
摘要翻译：要解决的问题：通过在脆性材料的切割步骤中将粘度和表面张力调节为低于常规的粘度和表面张力，提供加工后表面精度和洗涤力优异的含水切削液组合物，并且提供了具有这种特性的含水切削液的工业上有利的方法。
解决方案：含水切削液组合物包含10-120重量份亚烷基二醇（a），20-240重量份二烷基二醇（b），10-230重量份三亚烷基二醇（c）和0-120重量份基于100重量份的含有比例的由≥4个氧化烯单元组成的聚氧亚烷基二醇（d）水，具有5-18mPa的粘度和48-54mN / m的表面张力。版权所有（C）2013，JPO＆INPIT

10. 发明专利

JP2009206481A Cleaning agent for electronic materials and cleaning method 有权
标题翻译：电子材料清洁剂和清洗方法
公开(公告)号：JP2009206481A
公开(公告)日：2009-09-10
申请号：JP2008301806
申请日：2008-11-27
申请人： Sanyo Chem Ind Ltd , 三洋化成工業株式会社
发明人： KATSUKAWA YOSHITAKA , SUZUKI KAZUMICHI , SATO SHOHEI
IPC分类号： H01L21/304 , C11D1/12 , C11D1/29 , C11D1/34 , C11D3/18 , C11D3/20 , C11D3/26 , C11D3/30 , C11D3/37 , C11D3/43
CPC分类号： C11D11/0047 , C11D1/06 , C11D1/143 , C11D1/146 , C11D1/342 , C11D1/345 , C11D3/43
摘要： PROBLEM TO BE SOLVED: To provide a cleaning agent for electronic materials which can realize excellent particle removability, and has a weak foaming property and excellent temporal stability, without affecting flatness of a glass surface or silicon substrate surface, and to provide a cleaning method. SOLUTION: A cleaning agent for electronic materials comprises an anionic surfactant (A) having an anionic component expressed by general formula (1) : R 1 [-(OA 1 ) a -Q - ] b , one or more kinds of organic solvent (B) selected from the group consisting of 6-18C alkenes and an organic solvent expressed by general formula (2): R 3 [-(OA 2 ) c -OH] d , and an alkali component (C), wherein an SP value of the (B) is 6-13 and pH at an effective component concentration of 0.1-15% at 25°C is 10-14. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种可以实现优异的颗粒除去性，并且具有弱的发泡性和优异的时间稳定性的电子材料清洁剂，而不影响玻璃表面或硅衬底表面的平整度，并提供一种清洁方法。解决方案：电子材料用清洁剂包括具有由通式（1）表示的阴离子组分的阴离子表面活性剂（A）：R 1 SP 1 - 一种或多种选自6-18C烯烃的有机溶剂（B）中的一种或多种有机溶剂（B）和由通式（2）表示的有机溶剂：R 3 = - （OA -OH] / SB>和碱成分（C），其中（B）的SP值为6-13，在25℃下的有效成分浓度为0.1〜15％的pH为10〜14。版权所有（C）2009，JPO＆INPIT

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