会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 1. 发明专利
    • Gamma correction apparatus and method capable of noise processing
    • 伽马校正装置和噪声处理方法
    • JP2005341564A
    • 2005-12-08
    • JP2005137793
    • 2005-05-10
    • Samsung Electronics Co Ltd三星電子株式会社Samsung Electronics Co.,Ltd.
    • KIM MOON-CHEOLLEE SANG-JIN
    • H04N5/21H04N5/202H04N5/205
    • H04N5/202H04N5/205
    • PROBLEM TO BE SOLVED: To provide a gamma correction apparatus and method capable of noise processing which can suppress a noise boost-up phenomenon occurring upon a gamma correction.
      SOLUTION: A signal extraction unit 210 of a gamma correction apparatus relating to the present invention extracts high-frequency signals and low-frequency signals from an input image signal, a temporary weight value calculation unit 220 calculates a predetermined temporary weight value based on the luminance level of the input image signal, a decision unit 240 determines the high-frequency signals of the extracted high-frequency signals involved in a gamma correction based on the calculated temporary weight value, and a gamma correction unit 260 applies the gamma correction to the extracted high-frequency signals and low-frequency signals involved in the gamma correction.
      COPYRIGHT: (C)2006,JPO&NCIPI
    • 要解决的问题:提供能够抑制在伽马校正时发生的噪声提升现象的能够进行噪声处理的伽马校正装置和方法。 解决方案:本发明的伽马校正装置的信号提取单元210从输入图像信号中提取高频信号和低频信号,临时权重值计算单元220基于预定的临时权重值计算基于 在输入图像信号的亮度级上,判定单元240基于所计算的临时权重值来确定伽马校正中涉及的提取的高频信号的高频信号,伽马校正单元260将伽马校正 涉及伽马校正所涉及的提取的高频信号和低频信号。 版权所有(C)2006,JPO&NCIPI
    • 3. 发明专利
    • Color signal processing method and apparatus usable with color reproducing device having wide color gamut
    • 彩色信号处理方法和可用于具有宽彩色游戏的彩色再现装置的装置
    • JP2006014322A
    • 2006-01-12
    • JP2005181292
    • 2005-06-21
    • Samsung Electronics Co Ltd三星電子株式会社Samsung Electronics Co.,Ltd.
    • KIM MOON-CHEOLSHIN YOON-CHEOLLEE SANG-JIN
    • H04N1/46H04N9/64G06T1/00H04N1/60
    • H04N1/60H04N9/3114H04N9/3182
    • PROBLEM TO BE SOLVED: To provide a color signal processing apparatus and method.
      SOLUTION: The present invention relates to a color signal processing method and apparatus usable with a color reproducing device having a wide color gamut. The color signal processing method according to the present invention includes: first calculating a mixing ratio for producing a standard primary color of an input color signal by mixing source primary colors of a color reproducing device through which the input color is reproduced, reconstructing the source primary colors of the color reproducing device on the basis of the calculated mixing ratio, and transforming the input color signal to match a color gamut determined by the reconstructed primary colors and outputting the transformed color signal. Thus, the color gamut of the color reproducing device can be freely adjusted in accordance with the input color signal or its other purpose.
      COPYRIGHT: (C)2006,JPO&NCIPI
    • 要解决的问题:提供一种彩色信号处理装置和方法。 解决方案:本发明涉及可用于具有宽色域的彩色再现装置的彩色信号处理方法和装置。 根据本发明的彩色信号处理方法包括:首先通过混合输入颜色被再现的彩色再现装置的源原色来重新构成源主要部分,从而计算用于产生输入彩色信号的标准原色的混合比 根据计算出的混合比例,色彩再现装置的颜色,以及变换输入颜色信号以匹配由重构的原色确定的色域并输出变换的颜色信号。 因此,颜色再现装置的色域可以根据输入的颜色信号或其它目的自由地调整。 版权所有(C)2006,JPO&NCIPI
    • 7. 发明专利
    • Method of fabricating semiconductor element having shallow source/drain regions
    • 制造具有深源/漏区的半导体元件的方法
    • JP2004311999A
    • 2004-11-04
    • JP2004101507
    • 2004-03-30
    • Samsung Electronics Co Ltd三星電子株式会社
    • LEE SANG-JINKIN KEISHUGO SHOHOKANG HEE-SUNG
    • H01L21/265H01L21/336H01L29/78H01L29/786
    • H01L29/6653H01L21/2652H01L21/26586H01L29/6656H01L29/6659H01L29/7833
    • PROBLEM TO BE SOLVED: To provide a method of fabricating a semiconductor element having shallow source/drain regions. SOLUTION: First spacers are formed on insulating layers on both sidewalls of each gate pattern. Deep source/drain regions are formed in the semiconductor substrate of interest so as to align with the first spacers. After removing the first spacers, the insulating layers are etched to form second spacers for offsetting on both of the sidewalls of each gate pattern. Shallow source/drain regions are formed in the regions of the semiconductor substrate aligned with the second spacers for offsetting and adjoining the deep source/drain regions. Thus, it is realized to form the deep source/drain regions prior to the shallow source/drain regions, and to control an overlap of the impurities ion-implanted into the shallow source/drain regions created through the gate pattern line width gradually reducing with the second spacer for offsetting. COPYRIGHT: (C)2005,JPO&NCIPI
    • 要解决的问题:提供一种制造具有浅源/漏区的半导体元件的方法。 解决方案:在每个栅极图案的两个侧壁上的绝缘层上形成第一间隔物。 在感兴趣的半导体衬底中形成深源极/漏极区,以便与第一间隔物对准。 在去除第一间隔物之后,蚀刻绝缘层以形成用于在每个栅极图案的两个侧壁上偏移的第二间隔物。 在与第二间隔物对准的半导体衬底的区域中形成浅源极/漏极区,用于抵消和邻接深源极/漏极区。 因此,实现了在浅源/漏区之前形成深源/漏区,并且控制离子注入到通过栅极图案线宽度产生的浅源/漏区中的杂质的重叠逐渐减小, 用于抵消的第二间隔件。 版权所有(C)2005,JPO&NCIPI