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1. 发明专利

JPS61192353A METHOD AND DEVICE FOR PROCESSING CEREAL 失效
公开(公告)号：JPS61192353A
公开(公告)日：1986-08-26
申请号：JP3279585
申请日：1985-02-22
申请人： SANKOSHA CO LTD , BEIKEN KK
发明人： HAYASHI YUTAKA , HASHIMOTO SHUICHI
IPC分类号： B02B7/00

2. 发明专利

JPS62158694A SWITCHGEAR FOR POWDER AND GRANULAR BODY 失效
公开(公告)号：JPS62158694A
公开(公告)日：1987-07-14
申请号：JP29207585
申请日：1985-12-26
申请人： SANKOSHA CO LTD , BEIKEN KK
发明人： OTAKE YOSHIMUNE , HAYASHI YUTAKA
IPC分类号： B65D90/58 , B65D90/66

3. 发明专利

JPS61192354A AUTOMATIC RICE-CLEANING CONTROL METHOD 失效
公开(公告)号：JPS61192354A
公开(公告)日：1986-08-26
申请号：JP3279685
申请日：1985-02-22
申请人： SANKOSHA CO LTD , BEIKEN KK
发明人： HAYASHI YUTAKA , HASHIMOTO SHUICHI
IPC分类号： B02B7/00 , B02B7/02

4. 发明专利

JPH0260590B2 失效
公开(公告)号：JPH0260590B2
公开(公告)日：1990-12-17
申请号：JP29207585
申请日：1985-12-26
申请人： SANKOSHA KK , BEIKEN KK
发明人： OOTAKE YOSHIMUNE , HAYASHI YUTAKA
IPC分类号： B65D90/58 , B65D90/66

5. 发明专利

JPH04320066A SURGE PROTECTIVE DEVICE 失效
公开(公告)号：JPH04320066A
公开(公告)日：1992-11-10
申请号：JP11218491
申请日：1991-04-18
申请人： AGENCY IND SCIENCE TECHN , SANKOSHA CO LTD , OUME KOSUMOSU DENKI KK
发明人： HAYASHI YUTAKA , SATO MASAAKI , MAEYASHIKI YOSHIKI
IPC分类号： H01L29/74 , H01L29/861
摘要： PURPOSE:To enhance controllability or stability of a breakover current, a holding current and to improve surge resistance by eliminating to incorporate a part in contact with a surface of a second semiconductor region over an edge at least nearest a fourth region at the peripheral edge of a third region in a second ohmic electrode. CONSTITUTION:Since a second ohmic electrode 32 does not have, though in contact with a surface of a second semiconductor region 22, a contact at the side near a fourth semiconductor region 24, a hole current fH always passes a lower surface of a third semiconductor region 23 and then flows to the electrode 32 thereby to establish its passage. That is, it means that controllability, stability of a breakover current, a holding current are enhanced. In fact, this is confirmed by experiments. A result in which a surge resistance is also generally increased in proportion to an area of an element, is obtained.

6. 发明专利

JPH01286370A SEMICONDUCTOR SURGE PROTECTIVE ELEMENT 失效
公开(公告)号：JPH01286370A
公开(公告)日：1989-11-17
申请号：JP11352688
申请日：1988-05-12
申请人： AGENCY IND SCIENCE TECHN , SANKOSHA CO LTD , OUME KOSUMOSU DENKI KK
发明人： HAYASHI YUTAKA , SATO MASAAKI , YOSHIHARA HIROAKI
IPC分类号： H01L29/66 , H01L29/861
摘要： PURPOSE:To seek to improve electric characteristics and advance high integration by providing an auxiliary area capable of controlling implanted carriers. CONSTITUTION:Though discharged currents into an element flow out by the route leading a first semiconductor area 1 through a fourth area 4 and an auxiliary area 5, and following it, a phenomenon that a small number of carriers implanted from the fourth area 4 toward the first semiconductor area 1 recombines with a large number of carriers begins to occur in the auxiliary area 5. Further, as the passing current amounts increase, the speed of this recombination ceases to catch up with the supply speed of the small number of carriers or a condition that the defective density of the auxiliary area 5 is filled out with a small number of carriers occurs, and a small number of carriers begin to pass by the auxiliary area 5 as they are. As a result that a small number of carriers flowed into a second semiconductor area 2 electrically connected with a third area 3, voltage drop arises in the second semiconductor area 2, and implantation of carriers occurs from the third area 3 to the second semiconductor area 2. Hereby, clamp voltage becomes extremely low voltage, and high integration becomes easy.

7. 发明专利

JPH04320067A SURGE PROTECTIVE DEVICE 失效
公开(公告)号：JPH04320067A
公开(公告)日：1992-11-10
申请号：JP11218591
申请日：1991-04-18
申请人： AGENCY IND SCIENCE TECHN , SANKOSHA CO LTD , OUME KOSUMOSU DENKI KK
发明人： HAYASHI YUTAKA , SATO MASAAKI , MAEYASHIKI YOSHIKI
IPC分类号： H01L29/74 , H01L27/06 , H01L29/861
摘要： PURPOSE:To obtain a surge protective device suitable for absorbing unipolarity surge by increasing a sectional size along a surface direction of an ohmic contact region larger than a size in which a current concentrically flows in or out of the contact region. CONSTITUTION:An electron current fe flowing through an ohmic contact region concentrically flows to a part along a fourth semiconductor region 24 at a stage before the region 24 is forward-biased. As a result, even if a width XS of the ohmic contact region is varied in a range in which a width XS of an actual ohmic contact region 30 is larger than XF at the center of the current fe, a breakover current, a holding current of a device do not considerably vary with respect to the width XF.

8. 发明专利

JPS62154776A SURGE ABSORBING ELEMENT 失效
公开(公告)号：JPS62154776A
公开(公告)日：1987-07-09
申请号：JP29296985
申请日：1985-12-27
申请人： AGENCY IND SCIENCE TECHN , SANKOSHA CO LTD , MITAKA DENSHI KAGAKU KENKYUSHO
发明人： HAYASHI YUTAKA , SATO MASAAKI , MURAMATSU YUJI , YOSHIHARA HIROAKI , HASEGAWA TEIJI
IPC分类号： H01L27/04 , H01L21/822 , H01L27/02 , H01L27/06 , H01L29/74 , H01L29/861
摘要： PURPOSE:To obtain an element, by which an arbitrary breakdown voltage is obtained with good design property and a large current can be absorbed with a dynamic current phenomenon being suppressed, by absorbing a surge current by punch through between specified semiconductor regions, and controlling a holding current in a recombination region. CONSTITUTION:On the main surface side of a first semiconductor region (first conductivity type) 1, a second semiconductor region (reverse conductivity type), which forms a p-n junction diode, is provided. A third region 3 is contacted with the region 2 at its side opposite to the side of the region 1. Thus the region 3 specifies the effective thickness of the region 2. A fourth semiconductor region (reverse conductivity type) 4 is separated from the region 2 in the lateral direction and forms an implanted junction together with the region 1. A carrier recombination region 1R is provided at either or both of the following parts: a part between the regions 2 and 4 on said one surface side of the region 1; and at least parts beneath the region 2 and the region 4 at the back surface of the region 1. A surge current is generated by punch through between the region 1 and the region 3 when a depletion layer yielded by a reverse bias to said p-n junction diode reaches the region 3. With the surge current being absorbed, a holding current is controlled with the recombination region 1R.

9. 发明专利

JPS61164120A METHOD FOR AUTOMATICALLY CONTROLLING AND WEIGHING DROPPING OBJECT 失效
公开(公告)号：JPS61164120A
公开(公告)日：1986-07-24
申请号：JP484985
申请日：1985-01-17
申请人： YONEKEN KK , SANKOSHA CO LTD
发明人： HAYASHI YUTAKA , HASHIMOTO SHUICHI
IPC分类号： G01G13/12
摘要： PURPOSE:To automatically control the flow rate of a dropping object, by providing a current meter in the dropping course and measuring the dropping speed of the dropping object, and then, adjusting the feeding quantity of a feeding device and the timing of the supply cut of a timing control device. CONSTITUTION:A current meter 11 is provided on the midway of the dropping course 10 of a dropping object 2 and connected with a feeding device 20 and timing control device 13 through a calculation controller 12. Then the dropping speed of the dropping object 2 to be measured by means of the current meter 11 as a measuring point is set in the calculation controller 12. When the dropping object 2 is dropped onto the dropping course 10 through the opening 1a of a hopper 1, the current meter 11 measures the dropping speed of the dropping object 2 and the controller 12 compares the measured value with a set value and calculates a correction value, and then, adjusts the feeding quantity of the feeding device 20. In addition, the controller 12 calculates the correction value of the timing controller 13 from the dropping speed and the difference in height and time between the current meter 11 and a mass calculator 3 and adjusts the timing of supply cut.

10. 发明专利

JP2002016266A SEMICONDUCTOR ELEMENT AND ITS MANUFACTURING METHOD 失效
公开(公告)号：JP2002016266A
公开(公告)日：2002-01-18
申请号：JP2000194035
申请日：2000-06-28
申请人： SANKOSHA CO LTD , HAYASHI YUTAKA
发明人： SATO MASAAKI , YOSHIHARA HIROAKI , HAYASHI YUTAKA
IPC分类号： H01L29/747 , H01L29/06 , H01L29/739 , H01L29/74 , H01L29/744 , H01L29/78 , H01L29/861 , H01L29/866 , H01L29/87
摘要： PROBLEM TO BE SOLVED: To eliminate the trouble of the element characteristics of a semiconductor element formed on a semiconductor wafer to be used being fixed, due to the thickness of the wafer. SOLUTION: Mechanical strength required for working the semiconductor element 100, used to make a current flow across a first electrode E1 and a second electrode E2, in such a way that the inside of the semiconductor wafer 110 is passed through the first main face and the second main face of the semiconductor wafer, which face each other is ensured by a thickness do of the semiconductor wafer on which the element is formed. Before the element is formed in, a recess is formed on one main face of the semiconductor wafer 10, a region part whose thickness ds is thin is formed, and the semiconductor element is formed here. A thickness ds in the thin-layer part is set to a size which satisfies the element characteristics required by the formed semiconductor element.

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