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1. 发明专利

JP2013197146A Semiconductor device manufacturing method and semiconductor manufacturing device 审中-公开
标题翻译：半导体器件制造方法和半导体制造装置
公开(公告)号：JP2013197146A
公开(公告)日：2013-09-30
申请号：JP2012059925
申请日：2012-03-16
申请人： Renesas Electronics Corp , ルネサスエレクトロニクス株式会社
发明人： MIYAGAWA YUICHI , FUJII HIDEKI
IPC分类号： H01L21/52
CPC分类号： H01L24/75 , H01L2224/32145 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/00014 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method which suppresses variation in height of semiconductor chip to a wiring board as a reference.SOLUTION: In a semiconductor device manufacturing method, a semiconductor chip 10 is sucked on a sucking surface of a suction jig 100. An adhesive layer 30 is provided on a wiring board 20. Then, the semiconductor chip 10 is mounted on an area provided with the adhesive layer 30 on the wiring board 20 by using the suction jig 100. As a distance from the suction jig 100 to the wiring board 20, a first set distance with which the semiconductor chip 10 is estimated to contact with the adhesive layer 30 is set in advance. When the semiconductor chip 10 is mounted on the wiring board 20, the following processing is carried specifically. First, the suction jig 100 is lowered toward the wiring board 20. When it is detected that a distance from the suction jig 100 to the wiring board 20 becomes the first set distance, the lowering of the suction jig 100 is stopped. Then, the suction jig 100 with released semiconductor chip 10 is raised.
摘要翻译：要解决的问题：提供抑制半导体芯片到布线板的高度变化的半导体器件制造方法作为参考。解决方案：在半导体器件制造方法中，半导体芯片10被吸入吸引的吸附表面夹具100.在布线板20上设置粘合剂层30.然后，利用吸引夹具100将半导体芯片10安装在布线板20上设置有粘合剂层30的区域上。夹具100到布线板20，预先设定半导体芯片10与粘合剂层30接触的第一设定距离。当将半导体芯片10安装在布线板20上时，具体进行以下处理。首先，吸引夹具100朝向布线板20降低。当检测到从吸引夹具100到布线基板20的距离成为第一设定距离时，吸引夹具100的降低停止。然后，具有释放半导体芯片10的吸引夹具100升高。

2. 发明专利

JP2012054535A Semiconductor device, electronic device and semiconductor device manufacturing method 有权
标题翻译：半导体器件，电子器件和半导体器件制造方法
公开(公告)号：JP2012054535A
公开(公告)日：2012-03-15
申请号：JP2011126543
申请日：2011-06-06
申请人： Renesas Electronics Corp , ルネサスエレクトロニクス株式会社
发明人： MIYAGAWA YUICHI , FUJII HIDEKI , FURUYA KENJI
IPC分类号： H01L21/822 , H01L21/3205 , H01L23/52 , H01L25/00 , H01L27/04
CPC分类号： H01L23/5227 , H01L21/4853 , H01L21/4882 , H01L21/561 , H01L21/565 , H01L21/78 , H01L23/12 , H01L23/28 , H01L23/3114 , H01L23/3121 , H01L23/4334 , H01L23/48 , H01L23/49811 , H01L23/49838 , H01L23/49844 , H01L23/50 , H01L23/552 , H01L23/564 , H01L24/16 , H01L24/29 , H01L24/32 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/75 , H01L24/97 , H01L25/072 , H01L25/50 , H01L28/10 , H01L2224/05571 , H01L2224/05573 , H01L2224/16225 , H01L2224/16227 , H01L2224/29139 , H01L2224/2919 , H01L2224/32225 , H01L2224/32245 , H01L2224/48091 , H01L2224/48225 , H01L2224/48227 , H01L2224/48245 , H01L2224/48247 , H01L2224/49175 , H01L2224/73204 , H01L2224/73253 , H01L2224/73265 , H01L2224/75745 , H01L2224/7598 , H01L2224/97 , H01L2924/00014 , H01L2924/10157 , H01L2924/10253 , H01L2924/12041 , H01L2924/12042 , H01L2924/15151 , H01L2924/15311 , H01L2924/181 , H01L2924/1815 , H01L2924/3025 , H01L2224/85 , H01L2924/00 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device and the like that inhibits insufficient insulation for a first inductor and a second inductor due to migration of metallic materials forming the first inductor and the second inductor.SOLUTION: The semiconductor device comprises a semiconductor chip 100 mounted on a first face of a wiring board 200 and having a multilayered wiring layer, a first inductor 112 formed on the multilayered wiring layer and a roll axis direction oriented in parallel with the wiring board 200, a second inductor 122 formed on the multilayered wiring layer so as to face the first inductor 112 and a roll axis direction oriented in parallel with the wiring board 200, an encapsulation resin 400 encapsulating at least the first face of the wiring board 200 and the semiconductor chip 100, and a trench 500 formed in an entire area of at least a portion between the first inductor 112 and the second inductor 122 among a surface boundary between the encapsulation resin 400 and the multilayered wiring layer.
摘要翻译：要解决的问题：提供一种由于形成第一电感器和第二电感器的金属材料的迁移而抑制第一电感器和第二电感器的绝缘不足的半导体器件等。解决方案：半导体器件包括安装在布线板200的第一面上并具有多层布线层的半导体芯片100，形成在多层布线层上的第一电感器112和与该多层布线层平行取向的辊轴方向布线板200，形成在多层布线层上以面对第一电感器112的第二电感器122和与布线板200平行取向的辊轴方向;密封树脂400，至少封装布线板的第一面 200和半导体芯片100，以及形成在密封树脂400和多层布线层之间的表面边界中的在第一电感器112和第二电感器122之间的至少一部分的整个区域中的沟槽500。版权所有（C）2012，JPO＆INPIT

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