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1. 发明专利

JP2009158213A Method for manufacturing periodic nanostructure, and field emission type electron source 有权
标题翻译：制造周期性纳米结构的方法和场发射型电子源
公开(公告)号：JP2009158213A
公开(公告)日：2009-07-16
申请号：JP2007333242
申请日：2007-12-25
申请人： Panasonic Electric Works Co Ltd , パナソニック電工株式会社
发明人： ICHIHARA TSUTOMU , HATAI TAKASHI
IPC分类号： H01J9/02 , H01J1/312
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a periodic nanostructure, which can easily manufacture the periodic nanostructure having a plurality of nanostructure portions, in which many nanometer-order semiconductor microcrystallines are formed in a row in the thickness direction of a semiconductor material layer, and which are periodically formed in the plane of the semiconductor material layer, in a desired period of the nanostructure portions; and to provide a field emission type electron source capable of improving an electron emission characteristic. SOLUTION: A lower electrode 2 is formed on a single crystal silicon substrate (semiconductor material layer) 1, sites 31 to be arranged periodically on one surface of the silicon substrate 1 are formed, the silicon microcrystallines (semiconductor microcrystallines) 33 in a row in the thickness direction of the silicon substrate 1 are then formed by anodic oxidation, thereby obtaining the periodic nanostructure 10 in which the nanostructure portions 32 are arranged periodically. A silicon oxide film (insulating film) 34 is formed on a surface of each silicon microcrystalline 33, thereby forming a high-field drift portion 3, and a surface electrode 4 is formed on the high-field drift portion 3, thereby providing the field emission type electron source 20. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种制造周期性纳米结构的方法，其可以容易地制造具有多个纳米结构部分的周期性纳米结构，其中许多纳米级半导体微晶在厚度方向上成一排地形成半导体材料层，并且在所述纳米结构部分的期望周期中周期性地形成在所述半导体材料层的平面中; 并提供能够改善电子发射特性的场发射型电子源。解决方案：在单晶硅衬底（半导体材料层）1上形成下电极2，在硅衬底1的一个表面上周期性地设置位置31，硅微晶（半导体微晶）33 然后通过阳极氧化形成硅衬底1的厚度方向的一行，从而获得纳米结构部分32周期性地布置的周期性纳米结构10。在硅微晶33的表面上形成氧化硅膜（绝缘膜）34，形成高场漂移部3，在高场漂移部3上形成表面电极4，发射型电子源20.版权所有（C）2009，JPO＆INPIT

2. 发明专利

JP2011175800A Field emission electron source, and light-emitting device using the same 审中-公开
标题翻译：场发射电子源和使用其的发光装置
公开(公告)号：JP2011175800A
公开(公告)日：2011-09-08
申请号：JP2010037907
申请日：2010-02-23
申请人： Panasonic Electric Works Co Ltd , パナソニック電工株式会社
发明人： HATAI TAKASHI , ICHIHARA TSUTOMU
IPC分类号： H01J1/312 , H01J63/08
摘要： PROBLEM TO BE SOLVED: To provide a field emission electron source having high reliability while improving emission characteristics, and to provide a light-emitting device using the field emission electron source.
SOLUTION: In the light-emitting device 20, the field emission electron source 10 having a lower electrode 2, a surface electrode 4 opposed to the lower electrode 2, and an electron passing-through layer 3 intervened between the lower electrode 2 and the surface electrode 4 for passing electrons, wherein electrons passing through the electron passing-through layer 3 are emitted through the surface electrode 4 formed by changing its film thickness continuously or gradually, is arranged to face a collector electrode 23 and a phosphor layer for emitting fluorescence by excitation light emitted in a light-emitting process of excited Xe gas, in an airtight container 21 wherein the Xe gas is enclosed and at least partly formed of a light-transmitting material. The light-emitting device 20 controls voltage applied to the field emission electron source 10 and voltage between the collector electrode 23 and the field emission electron source 10 by a control device 25.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种在提高发光特性的同时具有高可靠性的场发射电子源，并提供使用场发射电子源的发光装置。解决方案：在发光器件20中，具有下电极2的场致发射电子源10，与下电极2相对的表面电极4和介于下电极2之间的电子通过层3 并且通过电子通过层3的电子的表面电极4通过连续或逐渐地改变其膜厚而形成的表面电极4发射，被设置为面对集电极23和荧光体层在气密容器21中，在被激发的Xe气体的发光过程中发射的激发光发射荧光，其中Xe气体被封闭并且至少部分地由透光材料形成。发光装置20通过控制装置25控制施加到场致发射电子源10的电压和集电极23与场致发射电子源10之间的电压。版权所有（C）2011，JPO＆INPIT

3. 发明专利

JP2011216348A Electron source 审中-公开
标题翻译：电子源
公开(公告)号：JP2011216348A
公开(公告)日：2011-10-27
申请号：JP2010083780
申请日：2010-03-31
申请人： Nissin Electric Co Ltd , Panasonic Corp , Panasonic Electric Works Co Ltd , パナソニック株式会社 , パナソニック電工株式会社 , 日新電機株式会社
发明人： ICHIHARA TSUTOMU , HATAI TAKASHI , KOGA KEISUKE , YAMAMOTO TOSHIYOSHI , MIYATA EMI , NAGAMACHI MANABU , KATO KENJI , INAMI HIROSHI , HAYASHI TSUKASA
IPC分类号： H01J1/312
摘要： PROBLEM TO BE SOLVED: To provide an electron source improved in the electron discharge characteristics, in comparison with those of conventional ones.SOLUTION: An electron passing layer 6 is provided between a lower electrode 2 and a surface electrode 7. The electron passing layer 6 includes a first electron passing part 6a on a lower electrode 2 side; and a second electron passing part 6b on a surface electrode 7 side. The second electron passing part 6b includes multiple second grains 32a formed along the thickness direction of the lower electrode 2; a first insulating thin film 35 formed in the surface of each of the second grains 32a; multiple nanometer-order fine crystalline semiconductors 33, interposed between the second grains 32a adjacent to each other; and a second insulating thick film 34 formed in the surface of each of the fine crystalline semiconductors 33 and formed smaller in the crystal grain diameter than the fine crystalline semiconductor 33. A region 36 of the second electron passing part 6b, in which the second grains 32a are formed in the thickness direction, and the first electron passing part 6a are mutually different in the crystal orientation, and the second grain 32a is higher than the first grain in the columnar structure.
摘要翻译：要解决的问题：提供与传统电子放电特性相比改善的电子源。解决方案：在下电极2和表面电极7之间设置电子通过层6.电子通过层6 包括在下电极2侧的第一电子通过部分6a; 和表面电极7侧的第二电子通过部6b。第二电子通过部分6b包括沿下电极2的厚度方向形成的多个第二晶粒32a; 形成在每个第二晶粒32a的表面中的第一绝缘薄膜35; 介于彼此相邻的第二晶粒32a之间的多个纳米级微晶半导体33; 以及形成在每个细晶半导体33的表面中并且形成为比微晶半导体33更小的晶粒直径的第二绝缘厚膜34.第二电子通过部6b的区域36，其中第二晶粒 32a形成在厚度方向上，第一电子通过部6a在晶体取向上相互不同，第二晶粒32a比柱状结构中的第一晶粒高。

4. 发明专利

JP2011154906A Light-emitting device 审中-公开
标题翻译：发光装置
公开(公告)号：JP2011154906A
公开(公告)日：2011-08-11
申请号：JP2010015800
申请日：2010-01-27
申请人： Panasonic Electric Works Co Ltd , パナソニック電工株式会社
发明人： ICHIHARA TSUTOMU , HATAI TAKASHI
IPC分类号： H01J61/54 , H01J61/16 , H01J65/00 , H05B41/24
摘要： PROBLEM TO BE SOLVED: To provide a light-emitting device capable of achieving low power consumption, high light-emitting efficiency, and longer lifetime, and making color-matching. SOLUTION: The light-emitting device includes an airtight container 1 where a gas capable of emitting light at a plurality of wavelengths, an electron source 2 supplying electrons for exciting the gas into the airtight container 1, an anode electrode 3 oppositely arranged on the electron source 2, a phosphor layer 4 arranged at an inner surface side of the airtight container 1 and emitting the light by being excited with excited light made of light emitted at a light-emitting step of the excited gas, and a control device 5 for controlling voltage between a surface electrode 27 and a lower electrode 25 (between driving electrodes) of the electron source 2 and voltage between the anode electrode 3 and the electron source 2. The phosphor layer 4 includes a plurality of phosphors having different excited energy dependence of light intensity. The control device 5 for exciting the gas without discharging the gas by controlling voltage between the surface electrode 27 and the lower electrode 25 of the electron source 2 so as to make peak energy of an energy distribution of the electrons larger than excited energy of the gas and to make the peak energy of the energy distribution of the electrons smaller than ionized energy of the gas. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供能够实现低功耗，高发光效率和更长寿命的发光装置，并进行配色。解决方案：发光装置包括气密容器1，其中能够发射多个波长的光的气体，向气密容器1供应用于激发气体的电子的电子源2，相对布置的阳极电极3 在电子源2上，配置在气密容器1的内表面侧的荧光体层4，并且通过在被激发的气体的发光步骤发出的光所产生的激发光激发而发光;以及控制装置用于控制电子源2的表面电极27和下电极25（驱动电极之间）之间的电压和阳极3与电子源2之间的电压。荧光体层4包括具有不同激发能的多个荧光体光强依赖性。用于通过控制电子源2的表面电极27和下电极25之间的电压来排出气体的控制装置5，以使电子的能量分布的峰值能量大于气体的能量的能量并使电子的能量分布的峰值能量小于气体的离子化能量。版权所有（C）2011，JPO＆INPIT

5. 发明专利

JP2011154905A Light-emitting device 审中-公开
标题翻译：发光装置
公开(公告)号：JP2011154905A
公开(公告)日：2011-08-11
申请号：JP2010015799
申请日：2010-01-27
申请人： Panasonic Electric Works Co Ltd , パナソニック電工株式会社
发明人： HATAI TAKASHI , ICHIHARA TSUTOMU
IPC分类号： H01J63/06 , H01J63/04 , H01J63/08 , H05B41/24
摘要： PROBLEM TO BE SOLVED: To provide a light-emitting device capable of attaining low power consumption, high light-emitting efficiency, and long life. SOLUTION: The light-emitting device includes an airtight container 1 wherein a gas is enclosed, an electron source 2 supplying electrons for making the gas excited into the airtight container 1, an anode electrode 3 oppositely arranged on the electron source 2, a phosphor layer 4 arranged at an inner surface side of the airtight container 1 and light-emitting by being excited with excitation light made of light emitted from a light-emitting process of the excited gas, and a control device 5 for controlling voltage between a surface electrode 27 and a lower electrode 25 (between driving electrodes) of the electron source 2 and voltage between the anode electrode 3 and the electron source 2. The control device 5 makes the gas excited without making the gas discharge by controlling voltage between the driving electrodes of the electron source 2 so as to make peak energy of an energy distribution of the electrons larger than excitation energy of the gas and to make the peak energy of the energy distribution of the gas smaller than ionization energy of the gas. The phosphor layer 4 has a first phosphor for light-emitting by being excited with the excitation light, and a second phosphor for light-emitting by being excited with the electrons from the electron source 2. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够实现低功耗，高发光效率和长寿命的发光装置。解决方案：发光装置包括封闭气体的气密容器1，供给用于使气体激发到气密容器1中的电子的电子源2，与电子源2相对地设置的阳极3，布置在气密容器1的内表面侧的荧光体层4，并且被由激发气体的发光过程发出的光所产生的激发光激励而发光;以及控制装置5，电极2的表面电极27和下电极25（驱动电极之间）和阳极3与电子源2之间的电压。控制装置5通过控制驱动之间的电压而使气体不进行气体放电电子源2的电极，使得电子的能量分布的峰值能量大于气体的激发能量，并使第气体的能量分布小于气体的电离能。荧光体层4具有通过被激发光激发而发光的第一荧光体，以及通过被来自电子源2的电子激发的发光的第二荧光体。（C）2011， JPO＆INPIT

6. 发明专利

JP2010020981A Light-emitting device 有权
标题翻译：发光装置
公开(公告)号：JP2010020981A
公开(公告)日：2010-01-28
申请号：JP2008179413
申请日：2008-07-09
申请人： Panasonic Electric Works Co Ltd , パナソニック電工株式会社
发明人： ICHIHARA TSUTOMU , HATAI TAKASHI
IPC分类号： H01J63/06 , H05B41/24
CPC分类号： H01J61/305 , H01J61/16 , H01J63/04 , H01J63/08
摘要： PROBLEM TO BE SOLVED: To provide a light-emitting device of lower power consumption, higher light emission efficiency, and longer life. SOLUTION: The light-emitting device includes an airtight container 1 in which a xenon gas is sealed up, an electron source 2 for applying electrons into the airtight container 1 for exciting the xenon gas, an anode electrode 3 arranged to face the electron source 2 in the airtight container 1, a phosphor layer 4 which is arranged on the inner surface side of the airtight container 1 and is excited for emission by the excitation light consisting of the light radiated during an emission process of the excited xenon gas, and a control device 5 for controlling a voltage between a surface electrode 27 of the electron source 2 and a lower electrode 25 (between drive electrodes) as well as a voltage between the anode electrode 3 and the electron source 2. The control device 5 controls the voltage between a surface electrode 27 of the electron source 2 and the lower electrode 25 so that the peak energy in energy distribution of electrons comes to be larger than the excitation energy of the xenon gas but smaller than the ionized energy of the xenon gas. Thus, the xenon gas is excited without discharging it. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供低功耗，更高发光效率和更长寿命的发光装置。解决方案：发光器件包括密封氙气体的气密容器1，用于将电子施加到用于激发氙气体的气密容器1中的电子源2，阳极3布置成面对气密容器1中的电子源2，配置在气密容器1的内表面侧的荧光体层4，被激发的激发光激发，该激发光由在被激发的氙气的发射过程中辐射的光组成，以及用于控制电子源2的表面电极27和下部电极25（驱动电极之间）之间的电压以及阳极电极3和电子源2之间的电压的控制装置5.控制装置5控制电子源2的表面电极27和下部电极25之间的电压使得电子的能量分布中的峰值能量大于氙气，但小于氙气的电离能。因此，氙气被激发而不会放电。版权所有（C）2010，JPO＆INPIT

7. 发明专利

JP2009155112A Method for producing polycrystalline thin film, method for producing composite nanocrystal layer, field-emission electron source, and luminescent device 有权
标题翻译：用于制造多晶薄膜的方法，用于生产复合纳米晶层的方法，场发射电子源和发光器件
公开(公告)号：JP2009155112A
公开(公告)日：2009-07-16
申请号：JP2007331446
申请日：2007-12-25
申请人： Panasonic Electric Works Co Ltd , パナソニック電工株式会社
发明人： HATAI TAKASHI , ICHIHARA TSUTOMU
IPC分类号： C01B33/029 , B82Y99/00 , C30B29/06 , C30B29/62 , H01J1/312 , H01J9/02 , H01J31/12 , H01L33/00 , H01L33/16 , H01L33/34 , H01L33/44
摘要： PROBLEM TO BE SOLVED: To provide a method for producing a polycrystalline thin film and a method for producing a composite nanocrystal layer, with which variation in size of a great number of columnar crystals grown in a direction perpendicular to one surface of a substrate and variation in formation positions can be suppressed, and a field-emission electron source enhancing electron emission efficiency and a luminescent device enhancing luminous efficiency. SOLUTION: A microcrystalline silicon thin film forming step (nucleus forming step) is carried out (figure (a)), wherein a microcrystalline silicon thin film 21 containing a great number of microcrystalline silicon grains in an amorphous silicon film is formed on one surface of a substrate 11, and then a polycrystalline silicon thin film forming step (crystal growing step) is carried out (figure (b)), wherein a polycrystalline silicon thin film (polycrystalline thin film) 31 comprising aggregates of a great number of columnar silicon crystals 31a is formed by growing the columnar silicon crystals (columnar crystals) 31a using the microcrystalline silicon grains in the microcrystalline silicon thin film 21 as nuclei. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种多晶薄膜的制造方法和复合纳米晶层的制造方法，其中在垂直于一个表面的方向上生长大量柱状晶体的大小变化可以抑制衬底和形成位置的变化，以及增强电子发射效率的场致发射电子源和提高发光效率的发光装置。解决方案：进行微晶硅薄膜形成步骤（核成型步骤）（图（a）），其中在非晶硅膜中含有大量微晶硅晶粒的微晶硅薄膜21形成在进行基板11的一个面，然后进行多晶硅薄膜形成工序（晶体生长工序）（图（b）），其中，多晶硅薄膜（多晶薄膜）31包括多个使用微晶硅薄膜21中的微晶硅晶粒作为核，通过生长柱状硅晶体（柱状晶体）31a来形成柱状硅晶体31a。版权所有（C）2009，JPO＆INPIT

8. 发明专利

JP2011216349A Electron source 审中-公开
标题翻译：电子源
公开(公告)号：JP2011216349A
公开(公告)日：2011-10-27
申请号：JP2010083781
申请日：2010-03-31
申请人： Nissin Electric Co Ltd , Panasonic Corp , Panasonic Electric Works Co Ltd , パナソニック株式会社 , パナソニック電工株式会社 , 日新電機株式会社
发明人： ICHIHARA TSUTOMU , HATAI TAKASHI , KOGA KEISUKE , YAMAMOTO TOSHIYOSHI , MIYATA EMI , NAGAMACHI MANABU , KATO KENJI , INAMI HIROSHI , HAYASHI TSUKASA
IPC分类号： H01J1/312
摘要： PROBLEM TO BE SOLVED: To provide an electron source capable of preventing outbreak of pin holes within an electron passage layer, and capable of improving the electron discharge characteristics, in comparison with those of conventional ones.SOLUTION: A lower electrode 2 is separated into a plurality of electrodes 12 by slits 2b. The electron passage layer 6 is formed to ride over each electrode 12 and a surface of a substrate 11. The second electron passage part 6b includes multiple second grains 32a formed along the thickness direction of the substrate 11; a first insulation thin film 35 formed in the surface of each second grain 32a; multiple nanometer-order fine crystalline semiconductors 33 interposed between the second grains 32a adjacent to each other; and a second insulating thick film 34 formed in the surface of the fine crystalline semiconductor 33 and smaller than the fine crystalline semiconductor 33 in the crystal grain diameter. A region 36 of the second electron passage part 7b, in which the second grains 32 are formed in the thickness direction, and the first electron passage part 6a are different in the crystal orientation, and the second grain 32 is higher than the first grain in the columnar structure.
摘要翻译：要解决的问题：提供一种能够防止在电子通过层内发生针孔的电子源，并且能够改善电子放电特性，与现有技术相比较。解决方案：将下部电极2分成多个电极12通过狭缝2b。电子通过层6形成为跨越每个电极12和基板11的表面。第二电子通道部分6b包括沿着基板11的厚度方向形成的多个第二晶粒32a; 形成在第二晶粒32a的表面上的第一绝缘薄膜35; 介于彼此相邻的第二颗粒32a之间的多个纳米级微晶半导体33; 以及在微晶半导体33的表面形成的晶粒直径小于微晶半导体33的第二绝缘厚膜34。第二电子通道部分7b的沿着厚度方向形成第二晶粒32的区域36和第一电子通道部分6a在晶体取向上不同，并且第二晶粒32比第一晶粒32高柱状结构。

9. 发明专利

JP2011175790A Field emission electron source, and light-emitting device using the same 有权
标题翻译：场发射电子源和使用其的发光装置
公开(公告)号：JP2011175790A
公开(公告)日：2011-09-08
申请号：JP2010037814
申请日：2010-02-23
申请人： Panasonic Electric Works Co Ltd , パナソニック電工株式会社
发明人： HATAI TAKASHI , ICHIHARA TSUTOMU
IPC分类号： H01J1/312 , H01J63/08
摘要： PROBLEM TO BE SOLVED: To provide a field emission electron source having high reliability while improving emission characteristics, and to provide a light-emitting device using the field emission electron source. SOLUTION: In the light-emitting device 20, the field emission electron source 10, in which electrons passed through an electron passing layer 3 intervened between a lower electrode 2 and a surface electrode 4 are emitted through the surface electrode 4, wherein a film thickness of the lowest section 41 of a first material having good adhesion with the electron passing-through layer 3 and a film thickness of the uppermost section 42 of a second material having a high electron transmission rate are changed continuously or gradually in a mutually reverse direction, is arranged to face a collector electrode 23 and a phosphor layer for emitting fluorescence by excitation light emitted in a light-emitting process of excited Xe gas in an airtight container 21 wherein the Xe gas is enclosed and at least a part of the container 21 is made from a light-transmitting material. The light-emitting device 20 is made to emit light by a control device 25 for controlling voltage applied to the field emission electron source 10 and voltage between the collector electrode 23 and the field emission electron source 10. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种在提高发光特性的同时具有高可靠性的场发射电子源，并提供使用场发射电子源的发光装置。解决方案：在发光器件20中，通过介于下电极2和表面电极4之间的通过电子通过层3的电子的场发射电子源10通过表面电极4发射，其中与电子通过层3具有良好粘附性的第一材料的最低部分41的膜厚和具有高电子传输速率的第二材料的最上部分42的膜厚度彼此连续地或逐渐地变化布置成面对集电极23和荧光体层，用于在密封容器21中的激发的Xe气体的发光过程中发射的激发光发射荧光，其中封入Xe气体，并且至少部分容器21由透光材料制成。通过用于控制施加到场致发射电子源10的电压和集电极23与场致发射电子源10之间的电压的控制装置25使发光装置20发光。（C） 2011年，JPO＆INPIT

10. 发明专利

JP2011175789A Manufacturing method for periodical nanostructure, and manufacturing method for field emission electron source 审中-公开
标题翻译：周期性纳米结构的制造方法和场发射电子源的制造方法
公开(公告)号：JP2011175789A
公开(公告)日：2011-09-08
申请号：JP2010037809
申请日：2010-02-23
申请人： Panasonic Electric Works Co Ltd , パナソニック電工株式会社
发明人： HATAI TAKASHI , ICHIHARA TSUTOMU
IPC分类号： H01J9/02 , B82B3/00
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method for a periodical nanostructure in a well-controlled state, by which a large number of semiconductor microcrystals of the order of nanometer sizes are periodically formed in a plane of a semiconductor substrate wherein the formed microcrystals are concatenated in a thickness direction of the semiconductor substrate, and to provide a manufacturing method for a field emission electron source capable of improving electron emission characteristics.
SOLUTION: A lower electrode 2 is formed on a silicon substrate (semiconductor substrate) 1, smoothness of inner peripheral surfaces of a plurality of vertical holes 31 is improved after forming the plurality of vertical holes 31 periodically arranged on one surface 1a of the silicon substrate 1 by anodic oxidation, and the periodical nanostructure can be obtained by forming silicon microcrystals (semiconductor microcrystals) 33 arranged in a thickness direction of the silicon substrate 1 along an inner peripheral surface of the vertical hole 31 by the anodic oxidation. Further, by forming a strong electric field drift section 3 by forming a silicon oxide film (insulating film) 34 on the surface of each silicon microcrystal 33, the field emission electron source 10 can be obtained by forming a surface electrode 4 on the strong electric field drift section 3.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：为了提供在良好控制状态下的周期性纳米结构的制造方法，通过该方法，在半导体衬底的平面中周期性地形成大量纳米尺寸的半导体微晶，其中，形成的微晶体在半导体衬底的厚度方向上连接，并提供能够改善电子发射特性的场致发射电子源的制造方法。解决方案：在硅衬底（半导体衬底）1上形成下电极2，在形成周期性地布置在多个垂直孔31的一个表面1a上的多个垂直孔31之后，改善多个垂直孔31的内周表面的平滑度通过阳极氧化形成硅衬底1和周期性纳米结构，可以通过阳极氧化在垂直孔31的内周面上形成沿着硅衬底1的厚度方向布置的硅微晶（半导体微晶）33。此外，通过在每个硅微晶33的表面上形成氧化硅膜（绝缘膜）34形成强电场漂移部分3，可以通过在强电场上形成表面电极4来获得场发射电子源10 场漂移部分3.版权所有（C）2011，JPO＆INPIT

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