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    • 1. 发明专利
    • Method for producing group iii element nitride crystal, group iii element nitride crystal, substrate for forming semiconductor device and semiconductor device
    • 用于生产III族元素氮化物晶体,III族元素氮化物晶体的方法,用于形成半导体器件和半导体器件的衬底
    • JP2010105850A
    • 2010-05-13
    • JP2008279321
    • 2008-10-30
    • Panasonic Corpパナソニック株式会社
    • YAMADA OSAMUMINEMOTO TAKASHIHIRANAKA KOICHIHATAYAMA TAKESHIMORI YUSUKESASAKI TAKATOMOKAWAMURA SHIROKITAOKA YASUO
    • C30B29/38C30B19/02H01L21/208
    • PROBLEM TO BE SOLVED: To provide a method for producing a group III element nitride crystal, in which reactions between an alkali metal and each of oxygen and water can be prevented and a growth rate of the group III element nitride crystal is improved. SOLUTION: The method for producing the group III element nitride crystal comprises the steps of: putting a group III element, the alkali metal and a seed crystal substrate 20 of the group III element nitride in a crystal growing vessel 18; and pressurizing/heating the inside of the crystal growing vessel 18 in a nitrogen-containing gas atmosphere to grow the group III element nitride crystal while using the seed crystal substrate 20 as a core, further concretely, comprises the steps of: preparing a first hydrocarbon and a second hydrocarbon having the boiling point higher than that of the first hydrocarbon; putting the alkali metal, which is coated with at least the first hydrocarbon of the first and second hydrocarbons, in the crystal growing vessel 18 before the inside of the crystal growing vessel 18 is pressurized/heated; removing the first hydrocarbon used for coating the alkali metal from the crystal growing vessel 18; and pressurizing/heating the inside of the crystal growing vessel 18 in the presence of the second hydrocarbon to grow the group III element nitride crystal. COPYRIGHT: (C)2010,JPO&INPIT
    • 要解决的问题:提供一种可以防止碱金属与氧和水各自反应的III族元素氮化物晶体的制造方法,提高III族元素氮化物晶体的生长速度 。 解决方案:用于制造III族元素氮化物晶体的方法包括以下步骤:将III族元素,III族元素氮化物的碱金属和晶种衬底20放置在晶体生长容器18中; 并且在含氮气体气氛中对晶体生长容器18的内部进行加压/加热,在使用晶种基板20作为核的同时使III族元素氮化物晶体生长,具体而言,包括以下步骤: 和沸点高于第一烃的第二烃; 在晶体生长容器18的内部加压/加热之前,将至少涂覆有第一和第二烃的第一烃的碱金属放入晶体生长容器18中; 从晶体生长容器18中除去用于涂覆碱金属的第一烃; 在第二碳氢化合物的存在下加压/加热晶体生长容器18的内部,以生长III族元素氮化物晶体。 版权所有(C)2010,JPO&INPIT