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1. 发明专利

JP2011138951A Thin-film solar battery and method for manufacturing the same 审中-公开
标题翻译：薄膜太阳能电池及其制造方法
公开(公告)号：JP2011138951A
公开(公告)日：2011-07-14
申请号：JP2009298366
申请日：2009-12-28
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： NAKAMURA KEISUKE , FURUHATA TAKEO , SHINAGAWA TOMOHIRO
IPC分类号： H01L31/04
CPC分类号： Y02E10/50
摘要： PROBLEM TO BE SOLVED: To attain a proper quality thin-film solar battery and a method for manufacturing the same which suppress reduction in the output characteristics due to residual substance, when solar battery cells are separated by a laser scribe method. SOLUTION: In a method for manufacturing the thin-film solar battery, a first electrode layer 12, a photoelectrically converting layer 13, and a second electrode layer 14 are stacked on a translucent insulating substrate 10, in this order, and a plurality of thin-film solar battery cells in which layers 12, 13, and 14 in an upper part of the translucent insulating substrate 10 are divided in a strip pattern by separation grooves 20, 21, and 22 are arranged. A linear mask layer 11 constituted of translucent materials is formed in a lower layer than or an identical layer to a layer divided by the separation grooves 20, 21, and 22, laser beams are irradiated to a region including the mask layer 11 from the translucent insulating substrate 10 side, and the separation grooves are formed, by masking one portion in an in-plane direction of the translucent insulating substrate 10 with the mask layer 11, and are formed in a layer which is higher than the translucent insulating substrate 10 by the laser beams. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题为了获得适当质量的薄膜太阳能电池及其制造方法，其抑制由于残留物质引起的输出特性的降低，当通过激光划片方法分离太阳能电池单元时。解决方案：在制造薄膜太阳能电池的方法中，依次将第一电极层12，光电转换层13和第二电极层14堆叠在半透明绝缘基板10上，并且设置多个薄膜太阳能电池单元，其中半透明绝缘基板10的上部的层12,13和14被分离成带状图案的分隔槽20,21和22。由半透明材料构成的线性掩模层11形成在与由分隔槽20,21和22分开的层的下层或相同的层中，激光束从包含掩模层11的区域照射到半透明绝缘基板10侧，并且通过用掩模层11将透光性绝缘基板10的面内方向的一部分进行掩模而形成分离槽，并且通过利用掩模层11形成在比透光性绝缘基板10高的层中激光束。版权所有（C）2011，JPO＆INPIT

2. 发明专利

JP2012190849A Thin film solar cell and manufacturing method thereof 有权
标题翻译：薄膜太阳能电池及其制造方法
公开(公告)号：JP2012190849A
公开(公告)日：2012-10-04
申请号：JP2011050741
申请日：2011-03-08
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： FURUHATA TAKEO , SHINAGAWA TOMOHIRO
IPC分类号： H01L31/04
CPC分类号： Y02E10/545 , Y02E10/548
摘要： PROBLEM TO BE SOLVED: To obtain a thin film solar cell with excellent photoelectric conversion efficiency.SOLUTION: The thin film solar cell comprises a translucent insulation substrate; a transparent conductive film formed on the translucent insulation substrate; a p-type conductive semiconductor layer formed on the transparent conductive film and including a Si atom and an O atom; a buffer layer formed on the p-type conductive semiconductor layer, having a layer including the Si atom, the O atom and a C atom, and having an O atom concentration equal to or less than that of the p-type conductive semiconductor layer; a photoelectric conversion layer formed on the buffer layer, including the Si atom and the C atom, and having an O atom concentration lower than that of the buffer layer; and an n-type conductive semiconductor layer formed on the photoelectric conversion layer. The buffer layer has a band gap higher than that of the photoelectric conversion layer, and includes an area in which the O atom concentration is not increased and decreased from an interface to the p-type conductive semiconductor layer toward an interface to the photoelectric conversion layer.
摘要翻译：要解决的问题：获得具有优异的光电转换效率的薄膜太阳能电池。
解决方案：薄膜太阳能电池包括半透明绝缘基板; 形成在所述半透明绝缘基板上的透明导电膜; 形成在透明导电膜上并包含Si原子和O原子的p型导电半导体层; 形成在所述p型导电半导体层上的缓冲层，具有包含所述Si原子，所述O原子和C原子的O原子浓度等于或小于所述p型导电半导体层的O原子浓度的层; 形成在包含Si原子和C原子的缓冲层上，并且O原子浓度低于缓冲层的光电转换层; 以及形成在光电转换层上的n型导电半导体层。缓冲层的带隙高于光电转换层的带隙，并且包括其中O原子浓度不从界面到p型导电半导体层向与光电转换层的界面增加和减小的区域。版权所有（C）2013，JPO＆INPIT

3. 发明专利

JP2010283200A Method of manufacturing thin film solar battery 审中-公开
标题翻译：制造薄膜太阳能电池的方法
公开(公告)号：JP2010283200A
公开(公告)日：2010-12-16
申请号：JP2009136112
申请日：2009-06-05
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： NAKAMURA KEISUKE , FURUHATA TAKEO
IPC分类号： H01L31/04
CPC分类号： Y02E10/50
摘要： PROBLEM TO BE SOLVED: To obtain a method of manufacturing a thin film solar battery for preventing deterioration of insulating resistance of a cell separation part or short circuit caused by generation of metal residue of a back surface electrode layer in cell separation, and manufacturing a thin film solar battery with excellent power generation efficiency and yield. SOLUTION: A method of manufacturing a thin film solar battery includes the following steps of: forming a middle conductor layer on a photoelectric conversion layer; forming a separation groove that reaches from a surface of the middle conductor layer to a surface of a first electrode layer; forming a protruding part where the middle conductor layer protrudes from a sidewall part of the photoelectric conversion layer in an inner direction of the separation groove; forming a connection groove that reaches from the surface of the middle conductor layer to the surface of the first electrode layer; and forming a conductive film on the middle conductor layer and in the connection groove to form a second electrode layer without covering a lower surface of the protruding part or at least a part of the sidewall part of the photoelectric conversion layer with the conductive film so that the second and first electrode layers are electrically connected in the connection groove and the second and first electrode layers are electrically insulated in the separation groove. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：为了获得一种薄膜太阳能电池的制造方法，用于防止由于在电池分离中产生背面电极层的金属残留而导致的电池分离部的绝缘电阻的劣化或短路，以及制造出具有优异的发电效率和产量的薄膜太阳能电池。解决方案：一种制造薄膜太阳能电池的方法包括以下步骤：在光电转换层上形成中间导体层; 形成从中间导体层的表面到第一电极层的表面的分离槽; 形成突出部分，其中所述中间导体层沿所述光电转换层的侧壁部分在所述分离槽的内部方向上突出; 形成从中间导体层的表面到第一电极层的表面的连接槽; 以及在所述中间导体层和所述连接槽中形成导电膜以形成第二电极层，而不用所述导电膜覆盖所述突出部分的下表面或所述光电转换层的侧壁部分的至少一部分，使得第二和第一电极层电连接在连接槽中，第二和第一电极层在分离槽中电绝缘。版权所有（C）2011，JPO＆INPIT

4. 发明专利

JP2009277766A Solar cell panel and method of manufacturing the same 审中-公开
标题翻译：太阳能电池板及其制造方法
公开(公告)号：JP2009277766A
公开(公告)日：2009-11-26
申请号：JP2008125776
申请日：2008-05-13
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： FURUHATA TAKEO , NAKAMURA KEISUKE , YAMABAYASHI HIROYA
IPC分类号： H01L31/04
CPC分类号： Y02E10/50
摘要： PROBLEM TO BE SOLVED: To provide a solar cell panel of excellent reliability for an extended period, by reducing deflection of a substrate even in any direction, major side direction and minor side direction, and eliminating residual stress, thus no peeling occurs on a semiconductor thin film photoelectric conversion layer even after the heat cycle for extended period. SOLUTION: An integrated type thin film solar cell panel 10 includes a surface electrode layer (first electrode layer) 2 stacked sequentially on a substrate 1, a semiconductor thin film photoelectric conversion layer 3, and a back electrode layer (second electrode layer) 4. The surface electrode layer 2 is divided into a plurality of pieces by a plurality of surface electrode separation grooves 2a which are linear and parallel among others. The semiconductor thin film photoelectric conversion layer 3 and the back electrode layer 4 are divided into a plurality of pieces by lattice-like back electrode separation grooves 4a and 4b. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决问题：通过减少基板的任何方向，大方向和小侧方向的挠曲，提供长时间的高可靠性的太阳能电池面板，消除残余应力，不发生剥离即使在长时间的热循环之后，也在半导体薄膜光电转换层上。解决方案：集成型薄膜太阳能电池板10包括依次层叠在基板1上的表面电极层（第一电极层）2，半导体薄膜光电转换层3和背面电极层（第二电极层）4.表面电极层2通过线状且平行的多个表面电极分离槽2a分成多个片。半导体薄膜光电转换层3和背面电极层4由格状的背面电极分离槽4a和4b分成多个片。版权所有（C）2010，JPO＆INPIT

5. 发明专利

JP2014049675A Solar cell and method of manufacturing the same 审中-公开
标题翻译：太阳能电池及其制造方法
公开(公告)号：JP2014049675A
公开(公告)日：2014-03-17
申请号：JP2012193056
申请日：2012-09-03
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： SHINAGAWA TOMOHIRO , FURUHATA TAKEO
IPC分类号： H01L31/06
CPC分类号： Y02E10/545 , Y02E10/548
摘要： PROBLEM TO BE SOLVED: To obtain a heterojunction silicon solar cell which suppresses current loss and in-film defects and has high photoelectric conversion efficiency.SOLUTION: The heterojunction silicon solar cell comprises: a single crystal silicon substrate 1 of a first conductivity type; and an intrinsic amorphous silicon layer 21, a microcrystal silicon layer 4, and an amorphous silicon layer 22 having a second conductivity type, which are sequentially laminated on a first main surface 1A of the single crystal silicon substrate. Thus, efficiency deterioration due to in-film hydrogen diffusion can be suppressed without increasing light absorption loss.
摘要翻译：要解决的问题：获得抑制电流损耗和膜内缺陷并具有高光电转换效率的异质结硅太阳能电池。解决方案：异质结硅太阳能电池包括：第一导电类型的单晶硅衬底1; 和本征非晶硅层21，微晶硅层4和具有第二导电类型的非晶硅层22，其依次层压在单晶硅衬底的第一主表面1A上。因此，可以抑制由于膜内氢扩散而引起的效率劣化，而不增加光吸收损失。

6. 发明专利

JP2013236020A Solar battery manufacturing apparatus and manufacturing method of solar battery 有权
标题翻译：太阳能电池制造设备和太阳能电池的制造方法
公开(公告)号：JP2013236020A
公开(公告)日：2013-11-21
申请号：JP2012108861
申请日：2012-05-10
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： YAMAMUKA MIKIO , FURUHATA TAKEO , YAMAGUCHI SHINSAKU
IPC分类号： H01L21/205 , C23C16/52 , H01L31/04
CPC分类号： Y02E10/50 , Y02P70/521
摘要： PROBLEM TO BE SOLVED: To obtain a solar battery manufacturing apparatus which arranges multiple substrates and concurrently performs processing on the multiple substrates and accurately measures a film thickness of a semiconductor film adhering to each substrate.SOLUTION: A solar battery manufacturing apparatus includes: a chamber 11; a substrate stage 12 and a substrate tray 13 that hold a substrate 111 in the chamber 11; thin film forming means forming a semiconductor film on the substrate 111 in the chamber 11; multiple lift pins 16 provided at through holes 12a, 13a, which are provided at the substrate stage 12 and the substrate tray 13 penetrating through the substrate stage 12 and the substrate tray 13 in a thickness direction, and supporting the substrate 111 so that the substrate 111 does not contact with the substrate stage 12 and the substrate tray 13; a mass measuring instrument 31 detecting loads applied to the lift pins 16 and thereby measuring the mass of the substrate 111; and a control part 32 causing the mass measuring instrument 31 to measure the reference mass of the substrate 111 before film formation and the mass of the substrate after the film formation.
摘要翻译：要解决的问题：为了获得一种太阳能电池制造装置，其设置多个基板并且同时对多个基板进行处理，并且精确地测量附着在每个基板上的半导体膜的膜厚。解决方案：太阳能电池制造装置包括：室 11; 衬底台12和将衬底111保持在腔室11中的衬底托盘13; 在室11中的基板111上形成半导体膜的薄膜形成装置; 设置在通孔12a，13a处的多个提升销16，其设置在衬底台12处，并且衬底托盘13在厚度方向上穿过衬底台12和衬底托盘13，并且支撑衬底111使得衬底 111不与基板台12和基板托盘13接触; 检测施加到升降销16的载荷并由此测量基板111的质量的质量测量仪器31; 以及控制部32，使得质量测量仪31在成膜前测量基板111的基准质量和成膜后的基板的质量。

7. 发明专利

JP2012114296A Thin-film solar cell and method of manufacturing the same 审中-公开
标题翻译：薄膜太阳能电池及其制造方法
公开(公告)号：JP2012114296A
公开(公告)日：2012-06-14
申请号：JP2010262897
申请日：2010-11-25
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： FURUHATA TAKEO , SHINAGAWA TOMOHIRO
IPC分类号： H01L31/04
CPC分类号： Y02E10/50
摘要： PROBLEM TO BE SOLVED: To obtain a thin-film solar cell having a tandem structure where two layers or more of photoelectric conversion unit are laminated and exhibiting excellent photoelectric conversion efficiency.SOLUTION: The thin-film solar cell comprises: a prestage photoelectric conversion unit 3 including a first p-conductivity type layer 31, a first photoelectric conversion layer 32 and a first n-conductivity type layer 33 from the light incident side; and a post-prestage photoelectric conversion unit including a second p-conductivity type layer 41, a second photoelectric conversion layer 42 and a second n-conductivity type layer 43 from the light incident side in contact with the first n-conductivity type layer 33. The first n-conductivity type layer 33 has a high refractive index layer 332 having a refractive index higher than those of the first photoelectric conversion layer 32 and the second p-conductivity type layer 41, and antireflection layers 331 and 333 provided either on the light incident side and/or the light emission side of the high refractive index layer 332 in contact therewith.
摘要翻译：要解决的问题：为了获得具有两层或更多层光电转换单元并具有优异光电转换效率的串联结构的薄膜太阳能电池。解决方案：薄膜太阳能电池包括：从光入射侧包括第一p导电型层31，第一光电转换层32和第一n导电型层33的预置光电转换单元3; 以及包含从与第一n型导电类型层33接触的光入射侧的第二p型导电型层41，第二光电转换层42和第二n型导电类型层43的后置前置光电转换单元。第一n导电类型层33具有折射率高于第一光电转换层32和第二p导电类型层41的折射率高的折射率层332，以及设置在光上的抗反射层331和333 高折射率层332的入射侧和/或发光侧与其接触。版权所有（C）2012，JPO＆INPIT

8. 发明专利

JP2011108836A Thin film solar cell, and method of manufacturing the same 有权
标题翻译：薄膜太阳能电池及其制造方法
公开(公告)号：JP2011108836A
公开(公告)日：2011-06-02
申请号：JP2009262163
申请日：2009-11-17
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： FURUHATA TAKEO , NAKAMURA KEISUKE , ORITA YASUSHI
IPC分类号： H01L31/04
CPC分类号： Y02E10/50
摘要： PROBLEM TO BE SOLVED: To obtain a thin film solar cell which is excellent in photoelectric conversion efficiency by increasing an optical absorption in a photoelectric conversion layer with a structure having a high light scattering performance and which can be manufactured simply and inexpensively, and to provide a method of manufacturing the same. SOLUTION: The thin film solar cell includes a transparent conductive film 2, at least one photoelectric conversion unit 3 formed of a semiconductor film and performing a photoelectric conversion, and a back electrode layer 6 sequentially formed on a translucent insulating substrate 1, wherein the photoelectric conversion unit 3 includes the photoelectric conversion layer 32 arranged between two conductivity layers 31, 33 having different conductivities, and at least one layer 33 of the conductivity layers 31, 33 has a cavity. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：解决问题：为了通过增加具有高散射性能的结构的光电转换层中的光吸收并且可以简单且廉价地制造而获得光电转换效率优异的薄膜太阳能电池，并提供其制造方法。解决方案：薄膜太阳能电池包括透明导电膜2，由半导体膜形成并执行光电转换的至少一个光电转换单元3和依次形成在半透明绝缘基板1上的背电极层6，其中光电转换单元3包括布置在具有不同电导率的两个导电层31,33之间的光电转换层32，并且导电层31,33的至少一个层33具有空腔。版权所有（C）2011，JPO＆INPIT

9. 发明专利

JP2015060884A 太陽電池およびその製造方法审中-公开
标题翻译：太阳能电池及其制造方法
公开(公告)号：JP2015060884A
公开(公告)日：2015-03-30
申请号：JP2013192228
申请日：2013-09-17
申请人：三菱電機株式会社 , Mitsubishi Electric Corp
发明人： SHINAGAWA TOMOHIRO , FURUHATA TAKEO , YAMAGUCHI SHINSAKU
IPC分类号： H01L31/06
CPC分类号： Y02E10/545 , Y02E10/547 , Y02E10/548
摘要：【課題】n型の非晶質シリコン系薄膜層中へのボロン原子の拡散を抑制し、裏面電界効果の低下を抑制することのできる太陽電池およびその製造方法を得る。【解決手段】少なくとも最表面がn型である第2主面1Bをもつ、一導電型のシリコン系基板としてのn型単結晶シリコン基板1の第1主面1Aに順次積層された、第1の非晶質シリコンi層21と、非晶質シリコンp層22と、第1の透光性導電膜23とを備えている。そして少なくともn型単結晶シリコン基板1の側面から第2主面1Bの周縁にかけて、ジボラン(B2H6)の分解により得られたボロン原子を不純物とする非晶質シリコンp層22の下層に酸化シリコン層4を有する。【選択図】図1
摘要翻译：要解决的问题：提供一种通过抑制硼原子扩散到n型非晶硅基薄膜层中能够抑制背面电场效应降低的太阳能电池，并且还提供一种制造相同。解决方案：太阳能电池包括依次层压在n型单晶硅衬底的第一主表面1A上的第一非晶硅i层21，非晶硅p层22和第一半透明导电膜23 1作为一种导电型硅衬底，其具有至少最外表面为n型的第二主表面1B。然后，从n型单晶硅衬底1的至少侧表面到第二主表面1B的周缘，将氧化硅层4设置为具有硼原子的非晶硅p层22下面的层通过分解乙硼烷（BH）作为杂质获得。

10. 发明专利

JP2012117089A Thin film production apparatus, and method of producing thin film solar cell 审中-公开
标题翻译：薄膜生产设备，以及生产薄膜太阳能电池的方法
公开(公告)号：JP2012117089A
公开(公告)日：2012-06-21
申请号：JP2010265501
申请日：2010-11-29
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： NAKAMURA KEISUKE , FURUHATA TAKEO , YAMAGUCHI SHINSAKU , NISHIKAWA YUSUKE
IPC分类号： C23C14/34 , H01L31/04
CPC分类号： Y02E10/50
摘要： PROBLEM TO BE SOLVED: To provide a thin film production apparatus that can control temperature with high accuracy by preventing the temperature on surfaces of such apparatus that come into contact with a gas phase as a high-frequency application electrode, a substrate electrode, and a wall of a reaction chamber from rising even if a large electric power is applied to the high-frequency application electrode.SOLUTION: The thin film production apparatus 10 includes: a film-forming chamber 11 having thereinside the substrate electrode 12 and the high-frequency application electrode 13 provided opposite to the substrate electrode 12; and a high-frequency power source 15 for supplying a high-frequency electric power to the high-frequency application electrode 13. The thin film production apparatus further includes: a plurality of cooling systems 20 and 30 to be provided for each coolant having different temperature, the cooling systems respectively including pipe arrangements 22 and 32 provided on a component of which a region comes into contact with the gas, and chillers 21 and 31 for circulating the coolant having predetermined temperature through the pipe arrangements 22 and 32; and a flow rate-controlling unit 16 for controlling flow rates of the coolants in the cooling systems 20 and 30 respectively, so that the temperature of the component becomes a predetermined temperature, according to the change of heat-input volume to the component due to on/off of the supply of electric power to the high-frequency application electrode 13 by the high-frequency power source 15.
摘要翻译：解决的问题：为了提供一种可以通过防止与气相接触的这种装置的表面上的温度作为高频施加电极而能够高精度地控制温度的薄膜制造装置，基板电极即使向高频施加电极施加大的电力，反应室的壁也上升。解决方案：薄膜制造装置10包括：在基板电极12和与基板电极12相对设置的高频施加电极13之间的膜形成室11; 以及用于向高频施加电极13提供高频电力的高频电源15.薄膜制造装置还包括：为具有不同温度的每个冷却剂提供的多个冷却系统20和30 分别包括设置在区域与气体接触的部件上的管道装置22和32以及用于使具有预定温度的冷却剂循环通过管道装置22和32的冷却器21和31; 以及流量控制单元16，用于分别控制冷却系统20和30中的冷却剂的流量，使得部件的温度变为预定温度，根据由于通过高频电源15对高频施加电极13的电力供应的开/关。版权所有（C）2012，JPO＆INPIT

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