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1. 发明专利

JP2531018B2 失效
公开(公告)号：JP2531018B2
公开(公告)日：1996-09-04
申请号：JP7190486
申请日：1986-03-27
申请人： MITSUBISHI ELECTRIC CORP
发明人： KAMEDA HIDEO
IPC分类号： G08B13/18 , G01S17/08 , G01S17/88 , G01S17/89 , G01V8/20 , G08B13/184

2. 发明专利

JPH0321829A PHOTOMETRY DEVICE 失效
公开(公告)号：JPH0321829A
公开(公告)日：1991-01-30
申请号：JP15725189
申请日：1989-06-20
申请人： MITSUBISHI ELECTRIC CORP
发明人： KAMEDA HIDEO , OCHIAI MINORU
IPC分类号： G01J1/44
摘要： PURPOSE:To eliminate the need of the correction of a temperature by providing a photoelectric current/voltage conversion circuit, a reference voltage circuit and a differential amplification circuit whose amplification factor has characteristic in inverse proportion to the temperature. CONSTITUTION:A light input sensor 100 detects incident light and the photoelectric current/voltage conversion circuit 110 is connected to the sensor 100 to convert a photovoltaic current into a voltage. The reference voltage circuit 120 converts a constant-current having the constant temperature into the voltage. The amplification factor of the differential amplification circuit 140 has the characteristic in inverse proportion to the temperature and receives output from both circuits 110 and 120 in its differential input terminal, then outputs a difference voltage between output from both of them. Thus, the amplification factor is in reverse proportion to the temperature and the input voltage in proportion to the temperature can be amplified with the amplification factor in reverse proportion to the temperature, so that the output voltage can be made constant to the temperature. As a result, the correction at each temperature is not needed and a circuit for the correction is made unnecessary.

3. 发明专利

JPH02154108A DISTANCE MEASURING INSTRUMENT 失效
公开(公告)号：JPH02154108A
公开(公告)日：1990-06-13
申请号：JP30923188
申请日：1988-12-06
申请人： MITSUBISHI ELECTRIC CORP
发明人： KAMEDA HIDEO
IPC分类号： G01C3/06 , G02B7/32
摘要： PURPOSE:To improve the accuracy at a long distance and to reduce circuit scale by providing a multiple-division photodetector and analog switches corresponding to it. CONSTITUTION:The analog sensors 21a - 21d are arranged corresponding to sensors, whose cathodes are connected to a reference voltage 26. The respective switches are initially off and when signal light is entered into a sensor, a photoelectromotive current is generated, shunt by resistances 22a - 22e, and passed through an operational amplifier 24 to generate a signal voltage at an output terminal 25. When the signal voltage generated at the terminal 25 is less than a constant value, the infinite distance is decided. Then when the signal voltage generated at the terminal 25 is larger than the constant value, the switches 21a - 21d are turned on in order. Thus, when the photosensor where the signal light is incident is connected to the voltage 256, the signal voltage at the terminal 25 becomes zero and the position of a signal spot is detected.

4. 发明专利

JPS6380627A D/A CONVERTING CIRCUIT 失效
公开(公告)号：JPS6380627A
公开(公告)日：1988-04-11
申请号：JP22512686
申请日：1986-09-24
申请人： MITSUBISHI ELECTRIC CORP
发明人： KAMEDA HIDEO
IPC分类号： H03M1/74
摘要： PURPOSE:To obtain a high-accuracy output by inserting a transistor (TR) for early effect correction into the current mirror of a D/A converting circuit and switching the point of connection with the output of the current mirror. CONSTITUTION:Currents flowing to output TRs 6b-6n constituting the current mirror flow to the emitters of the TRs 10b-10n for early effect correction and flow out of the collector to an output terminal 13. Consequently, a high- accuracy output voltage V13 is obtained regardless of whether or not an output terminal voltage VB is high and variation in VCC. When only a switch 11b is turned on, the current of the TR 6b flows to GND3 through the switch 11b and never flows to the emitter of the TR 10b. The emitter and base of the TR 10b are biased reversely, so no current flow in from the base or collector reversely. Thus, respective switches are turned on and off in combination to obtain a digital signal accurately as an analog voltage.

5. 发明专利

JPS62219532A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE 失效
公开(公告)号：JPS62219532A
公开(公告)日：1987-09-26
申请号：JP6347686
申请日：1986-03-19
申请人： MITSUBISHI ELECTRIC CORP
发明人： KAMEDA HIDEO
IPC分类号： H01L21/60
摘要： PURPOSE:To make the external measurements small as well as to enhance the degree of integration of the titled device by a method wherein the IC chip die-bonded frame and another frame, on which the externally attached part of the IC chip is mounted, are adhered back to back, and they are resin-molded. CONSTITUTION:An IC chip 2 is die-bonded to a frame 3a, and they are assembled in the same flow of assembling of the ordinary integrated circuit device until a wire bonding is completed. On the other hand, the soldering work such as solder reflowing and the like is performed as the method for mounting of an externally attaching part 6 on a frame 3b. Said two kinds of frames 3a and 3b are superposed back to back based on the positioning pin on a molding metal mold in a molding process, they are sealed using the same molding resin, and the IC chip 2, the frames 3a and 3b and the externally attaching part 6 are fixed. After the resin molding work has been finished, the pins 6a, 6b and 6c are electrically connected using the method of plating, solder dipping and the like.

6. 发明专利

JPS62203010A DISTANCE MEASURING APPARATUS 失效
公开(公告)号：JPS62203010A
公开(公告)日：1987-09-07
申请号：JP4417586
申请日：1986-03-03
申请人： COPAL CO LTD , MITSUBISHI ELECTRIC CORP
发明人： KUROSU TOMIO , KAMEDA HIDEO
IPC分类号： G01C3/06 , G01B11/00 , G01C3/00 , G02B7/32
摘要： PURPOSE:To enhance both of external light yield strength and signal light detection capacity at the same time, by making it possible to make the resistance value of the resistor connected to a photo detector in series variable corresponding to the quantity of light incident on the photo detector. CONSTITUTION:The resistor connected to a photo detector S1 in series is divided into resistors R1A, R1B, and the resistor R1B is replaced with a photoconductive element. When the quantity of external light incident on the element S1 is decreased, the quantity of light incident on the photoconductive element R1B is also decreased. Because a resistance value R1A+R1B is large in this case, signal light detection capacity is high. By this method, the compatibility of signal light detection capacity and external light yield strength can be achieved.

7. 发明专利

JPH0533846B2 失效
公开(公告)号：JPH0533846B2
公开(公告)日：1993-05-20
申请号：JP4463886
申请日：1986-02-28
申请人： MITSUBISHI ELECTRIC CORP
发明人： KAMEDA HIDEO
IPC分类号： G01S7/48 , G02B7/09 , H03F3/08 , H03F3/34 , H03F3/343

8. 发明专利

JPH0414729B2 失效
公开(公告)号：JPH0414729B2
公开(公告)日：1992-03-13
申请号：JP15444785
申请日：1985-07-12
申请人： MITSUBISHI ELECTRIC CORP
发明人： KAMEDA HIDEO
IPC分类号： G01S7/48 , G01B11/00 , G01C3/00 , G01C3/06 , G01C15/00 , G01S17/08 , G02B7/32

9. 发明专利

JPS63174357A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE 失效
公开(公告)号：JPS63174357A
公开(公告)日：1988-07-18
申请号：JP714087
申请日：1987-01-13
申请人： MITSUBISHI ELECTRIC CORP
发明人： KAMEDA HIDEO
IPC分类号： H01L31/10 , H01L27/14 , H01L27/144
摘要： PURPOSE:To constitute a high sensitivity photosensor on the same chip as a circuit element using the long wavelength light such as infrared rays and the like by a method wherein the substrate of an IC is brought into the state of high specific resistance, and the lower part of a circuit element part is isolated by a high density p+ layer. CONSTITUTION:The p type diffusion layer 2B, to be used for isolation of the lower part of the n type epitaxially grown layer 5b of the related circuit element forming part of the B-region, is formed on the p type substrate 1 having high specific resistance. In the photosensor of the part A, the light projected from a light-receiving part 10 is a long wavelength light, and even when a pair of electrons and holes are generated in the substrate 1 on the deep position from the silicon surface, the recombination of electrons becomes small, because said p type specific resistance is high. As a result, the ultimate efficiency on the n type epitaxial layer 5a can be improved, and a number of photoelectric currents can also be picked out.

10. 发明专利

JPS6387753A MANUFACTURE OF SEMICONDUCTOR INTEGRATED CIRCUIT 失效
公开(公告)号：JPS6387753A
公开(公告)日：1988-04-19
申请号：JP23408586
申请日：1986-09-30
申请人： MITSUBISHI ELECTRIC CORP
发明人： KAMEDA HIDEO
IPC分类号： H01L23/50
摘要： PURPOSE:To simplify a burring operation, by performing heat-resisting sealing and heat-resisting coating on or between leads parts of a lead frame and thereafter performing resin molding. CONSTITUTION:Heat-resisting seals 5 are stuck beforehand or heat-resisting resin coating is applied to both surfaces of lead parts 3 and between the leads parts 3 which are required to be protected from burs 6 on a lead frame 2. Then, die bonding and wire bonding of an IC chip are performed on this lead frame 2, and the whole is molded with resin. Because the burrs 6 are stuck on the heat-resisting seal 5 or the coating material, these heat-resisting seal 5 or heat-resisting coating material are peeled after the completion of molding and so the burrs 6 can be easily removed.

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