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1. 发明专利

JP2001007165A PROBE CARD UNIT 失效
公开(公告)号：JP2001007165A
公开(公告)日：2001-01-12
申请号：JP17383299
申请日：1999-06-21
申请人： MITSUBISHI ELECTRIC CORP
发明人： KOMORI JUNKO
IPC分类号： G01R31/28 , G01R1/06 , G01R31/27 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To offer a probe card unit equipped with a probe card wafer which securely establishes electrical connection with the pads of two or more semiconductor devices formed on a semiconductor substrate to be measured. SOLUTION: This probe card unit has an insulator board 2, two or more bumps 21, and a probe card wafer 1 made of a material same as the wafer to be measured. To evacuate the wafer to be measured, the probe card wafer 1 has spacers 3 which seal spaces between the wafer to be measured and the probe card wafer 1, and a wafer through hole 16 for evacuation.

2. 发明专利

JPH04115538A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH04115538A
公开(公告)日：1992-04-16
申请号：JP23871090
申请日：1990-09-05
申请人： MITSUBISHI ELECTRIC CORP
发明人： KOMORI JUNKO
IPC分类号： H01L29/78 , H01L21/336
摘要： PURPOSE:To improve reliability by forming side gates at the drain side of the gate electrode of a field-effect transistor and applying voltage different from that of the gate electrode to a side gate. CONSTITUTION:A thin oxide film 4 is formed on a silicon substrate, a gate electrode 1, and the sidewalls of the gate and polysilicon is deposited on the whole surface and etched to form side gates 5 on the sidewalls of the gate electrode 1 as a main gate. Low-concentration impurity diffusion layers 6a and 6b are formed, resist 7 is patterned at a drain formation region, and the source-side side gate 5 is removed. Voltage different from that of the gate electrode 1 is applied to the side gate 5. Thereby a horizontal electric field near the drain is relaxed and generation of a hot carrier and decrease in the element characteristic of an MOA type field-effect transistor (MOSFET) are suppressed.

3. 发明专利

JPH0444224A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH0444224A
公开(公告)日：1992-02-14
申请号：JP15078090
申请日：1990-06-07
申请人： MITSUBISHI ELECTRIC CORP
发明人： KOMORI JUNKO
IPC分类号： H01L21/768 , H01L21/28
摘要： PURPOSE:To realize excellent ohmic contact between a wiring layer and Si substrate in a contact hole by silicifying a titanium film in the contact hole. CONSTITUTION:After forming an interlayer insulating film 12 on an Si substrate 11 and a contact hole 13 into the film 12, a thin titanium (Ti) film 14 is formed on the film 12 and in the hole 13. A titanium silicide (TiSi2) film 16 is formed by only silicifying the Ti film 14 at the bottom of the hole 13 by RTA (Rapid Thermal Annealing) and, at the same time, the Si oxide film 15 at the boundary between the film 14 and substrate 11 is dissipated. At the same time, a Ti oxide film 17 is formed on the surface of the TiSi2 film 16 and the surface of the substrate 11 is silicified. After silicification, an unreacted Ti film 14 on the insulating film 12 is removed by etching and the Ti oxide film 17 is removed by sputtering with an inert gas. Finally, a wiring layer 18 composed of tungsten, Si polycrystals, etc., is formed in the contact hole 13 by a CVD method, etc., without exposing the cropping out TiSi2 film 17 to the atmosphere.

4. 发明专利

JPS6298750A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS6298750A
公开(公告)日：1987-05-08
申请号：JP24008885
申请日：1985-10-25
申请人： MITSUBISHI ELECTRIC CORP
发明人： KOMORI JUNKO
IPC分类号： H01L21/768
摘要： PURPOSE:To effectively avoid a disconnection or a short-circuit by a method wherein the via hole part for connecting the lower wiring layer and the upper wiring layer is buried by silicifying a CVD polysilicon film and a CVD tungsten film and a tungsten silicide film to be used as the upper wiring layer is formed. CONSTITUTION:A first metal wiring layer to be used as a lower wiring layer is formed on a substrate, an interlayer insulating film 2 is formed and a via hole 3 for exposing the first metal wiring layer 1 is opened. Subsequently, after a CVD poly Si film is grown, a CVD poly Si film 4 is formed by patterning. Utilizing the characteristic of a CVD tungsten film which can be deposited only on the existing part of an Si film, this CVD tungsten film is deposited and with this tungsten film silicified with the poly Si film, the surface of the via hole 3 part is buried until being flattened by feeding always silicon to the uppermost surface and a tungsten silicide film 5 to be used as an upper second wiring layer which is connected to the first metal wiring layer 1 is formed.

5. 发明专利

JPH09101348A INPUT-OUTPUT PROTECTION CIRCUIT TEG AND METHOD FOR EVALUATION THEREOF 失效
公开(公告)号：JPH09101348A
公开(公告)日：1997-04-15
申请号：JP26012895
申请日：1995-10-06
申请人： MITSUBISHI ELECTRIC CORP
发明人： KOMORI JUNKO
IPC分类号： G01R31/26 , G01R1/36 , G01R31/28 , H01L21/66 , H01L21/822 , H01L23/60 , H01L27/04
摘要： PROBLEM TO BE SOLVED: To obtain an input-output protection circuit TEG and a method for evaluation thereof which enable detection of a failure even when it is marginal and also evaulation of the characteristics of an element when the failure is marginal. SOLUTION: A surge is impressed on an input pad 1a and a surge voltage thereof is recorded. A pulse being impressed on the input pad 1a, thereafter, an output signal of a monitor terminal 7 is detected and a delay time of the pulse from the input pad 1a to the monitor terminal 7 is measured and recorded. After these surge voltage and delay time are recorded repeatedly, a singular point of the delay time where it changes abruptly is detected from the surge voltages and the delay times recorded. By detecting this singular point, a marginal failure of an inverter 3 due to the surge voltage impressed at the singular point can be detected.

6. 发明专利

JPH04271125A SEMICONDUCTOR DEVICE AND ITS MANUFACTURE 失效
公开(公告)号：JPH04271125A
公开(公告)日：1992-09-28
申请号：JP945791
申请日：1991-01-30
申请人： MITSUBISHI ELECTRIC CORP
发明人： KOMORI JUNKO , SHIRAHATA MASAYOSHI , YOSHIOKA NOBUYUKI
IPC分类号： H01L21/28 , H01L21/268 , H01L21/3205 , H01L23/52
摘要： PURPOSE:To form an aluminum wiring of high electromigration resistance. CONSTITUTION:An aluminum wiring 1 is buried in a trench 9 formed in an interlayer insulating film 8 on a silicon substrate 7, and subjected to annealing by laser scanning. As the result, the periphery of the aluminum wiring 1 is surrounded by the interlayer insulating film 8 serving as a thermal insulator, so that heat is not dissipated from the periphery of the aluminum wiring, and crystallization from the periphery can be prevented. Thereby crystal grains of aluminum can be grown to be large. On account of the increase of crystal grain diameter, the density of gain boundary generating aluminum atom migration is decreased, and the aluminum wiring of high reliability can be formed.

7. 发明专利

JPH0316134A FORMATION OF THIN FILM 失效
公开(公告)号：JPH0316134A
公开(公告)日：1991-01-24
申请号：JP7403390
申请日：1990-03-22
申请人： MITSUBISHI ELECTRIC CORP
发明人： YAMAGUCHI TAKEHISA , MAEDA ATSUSHI , KOMORI JUNKO
IPC分类号： H01L21/3205 , H01L23/52
摘要： PURPOSE:To restrain a high-melting metal silicide from being condensed by a method wherein a nitride and an unreacted substance out of a metal silicide, the nitride and the unreacted substance which are produced by a first heat treatment are removed and a second heat treatment is executed in an oxidizing atmosphere. CONSTITUTION:A high-melting metal 14 is deposited on a silicon semiconductor substrate 11; then, a first heat treatment is executed in a nitrifying atmosphere; after that, a nitride 16 and an unreacted substance 17 out of a high-melting metal silicide 15, the nitride and the unreacted substance which are produced by this heat treatment are removed; then, a second heat treatment is executed in an oxidizing atmosphere. A high-melting silicide 18 which is crystallographically stable by the second heat treatment is formed in this manner; an oxide film 19 with which the high-melting metal silicide 18 is covered is formed. Thereby, even when the heat treatment is executed after an interlayer insulating film has been deposited, it is possible to restrain the high-melting metal silicide from being condensed; a thin film whose resistance is low can be obtained as an internal interconnection layer.

8. 发明专利

JPH01158329A IMPURITY DETECTING AND ANALYZING METHOD 失效
公开(公告)号：JPH01158329A
公开(公告)日：1989-06-21
申请号：JP31612187
申请日：1987-12-16
申请人： MITSUBISHI ELECTRIC CORP
发明人： KOMORI JUNKO , MASUKO YOJI
IPC分类号： G01N1/34 , G01N1/28 , G01N1/40
摘要： PURPOSE:To suppress the mixing of impurities from the outside and to make it possible to detect and analyze the impurities highly accurately, by heating a substrate in a high vacuum state, dropping a liquid sample in a low vacuum state, and checking the surface of the substrate in the high vacuum state again. CONSTITUTION:A conveying vessel device 12 is connected to a cleaning device 4. A substrate 3 is inserted into the inside of a heater 6 in a chamber 5. The insides of the chamber 5 and a container main body 13 are made to be a vac uum state of about 1X10 Torr. The substrate 3 is heated to 1,000 deg.C or more with the heater 6. The substrate 3 is taken into the main body 13. The device 12 is separated from the device 4. The device 12 is connected to a sample drop ping device 18. The inside of a chamber 19 is made to be about 1X10 Torr. The substrate 3 is inserted into the chamber 19 and positioned directly below a pippet 2. Inactive gas is sent into the chamber 19 so as to obtain atmospheric pressure. A sample 1 is dropped on the substrate 3 from the pippet 2. The inside of the chamber 19 is made to be about 1X10 Torr again. Then the substrate 3 is taken out. The device 12 is separated and linked to a solid analyz ing device 28. The inside of the device 28 is kept at a high vacuum state. The substrate 3 is inserted into a path 30 and analyzed.

9. 发明专利

JPH01136057A SECONDARY ION MASS SPECTROMETRY 失效
公开(公告)号：JPH01136057A
公开(公告)日：1989-05-29
申请号：JP29455987
申请日：1987-11-20
申请人： MITSUBISHI ELECTRIC CORP
发明人： KOMORI JUNKO
IPC分类号： G01B11/22 , G01N23/225 , H01J49/16
摘要： PURPOSE:To achieve a secondary ion mass spectrometry exactly corresponding to the depth of an analysis area, by measuring the depth of the analysis area of a sample with a Michelson interferometer in a non-contact manner using light. CONSTITUTION:A primary ion beam 13 is directed to an analysis area of the surface of a sample 1 and a chemical analysis is performed by measuring a mass-wise intensity of secondary ions released therefrom. At the same time, light beam 12 is irradiated to the surface of the sample 1 and the analysis area and a deviation in a wave front is measured with a Michelson interferometer between the reflected light beam from the surface of the sample 1 and that from the analysis area to determine the depth of the analysis area. The Michelson interferometer is equipped with a mobile mirror 5, a fixed mirror 6, a light beam splitter 7, a lens L4 and a photo detector 8 and a signal obtained with the photo detector 8 is processed with a signal processor 9, thereby enabling chemical analysis directly related to the depth of the analysis area.

10. 发明专利

JP2003121494A PROBER DEVICE AND SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：JP2003121494A
公开(公告)日：2003-04-23
申请号：JP2001321338
申请日：2001-10-19
申请人： MITSUBISHI ELECTRIC CORP , RYODEN SEMICONDUCTOR SYST ENG
发明人： KANAO TAKASHI , KOMORI JUNKO
IPC分类号： G01R31/26 , G01R1/06 , G01R1/067 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To carry out measurement without bringing a probe needle not used for the measurement or a probe needle to be set open into contact with a measuring pad. SOLUTION: Part of a probe needle 1 is machined into a fan-like shape and the part 1a machined into the fan-like shape is pressed by an electromagnet 3 and released, so that the probe needle 1 is extended and constricted, and contact and non-contact of the probe needle 1 with respect to the measuring pad 4 is executed.

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