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    • 4. 发明专利
    • CRYSTAL DEPOSITING METHOD
    • JPS56163702A
    • 1981-12-16
    • JP6832780
    • 1980-05-22
    • KUREHA CHEMICAL IND CO LTD
    • KOBAYASHI AKIO
    • B01D9/02B01D9/00
    • PURPOSE:To realize growth of crystallization, by once solidifying the stock solution and then utilizing the latent heat for melt of an impurity and a fine crystal. CONSTITUTION:The solution containing the component to be crystallized is stuck on the surface of a rotary drum 3 cooled, and this stuck substance is taken off by a scratch-off blade 4 and then crushed by a crusher 5 to be supplied to a growing tank 6. The stock solution same as that to be supplied to a sticking solution tank 1 is filled in the tank 6, and a cold temperature is kept in the tank 6 so as to treat the supplied crystal as a slurry. To keep the said temperature constant, a part of the stock solution is supplied also to the tank 6 through a supply pipe 7. A stirrer 8 is provided in the tank 6 to cause a rising flow sufficient to float up the fine crystal. The solidified substance of the stock solution which is stuck to the drum surface and then peeled off and crushed circulates in the tank 6, and meanwhile a crystal of a low-melting point containing a fine crystal and the impurity is melted. The slurry solution is cooled by the latent heat produced when the crystal is melted to deposit a crystal having a high-mleting point and high purity.