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1. 发明专利

JP2004146410A Semiconductor device and its manufacturing method 审中-公开
公开(公告)号：JP2004146410A
公开(公告)日：2004-05-20
申请号：JP2002306333
申请日：2002-10-21
申请人： Kobe Steel Ltd , 株式会社神戸製鋼所
发明人： ONISHI TAKASHI , FUJII HIDEO , YOSHIKAWA TETSUYA , MUNEMASA ATSUSHI
IPC分类号： H01L21/3205 , H01L23/52
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device having a wiring film which has proper adhesion of an interface of a barrier layer and a copper or a copper alloy film, and to provide a method for efficiently manufacturing the same. SOLUTION: The method for manufacturing the semiconductor device includes an arbitrary number of times of a laminating process including a step of forming an insulating film 2 having a groove for burying wiring or a connecting hole 3 on a semiconductor substrate 1 (step A), a step of forming the barrier film 4 made of a tantalum nitride on the insulating film (step B), a step of forming the copper or the copper alloy film 5 on the barrier layer (step C), and after each step C or after at least the final step C, conducting annealing under pressure to form an amorphous alloy layer 6 made of the tantalum and the copper in the interface of the barrier layer and the copper or the copper alloy film. COPYRIGHT: (C)2004,JPO

2. 发明专利

JP2012127794A Tire testing device 有权
标题翻译：轮胎测试设备
公开(公告)号：JP2012127794A
公开(公告)日：2012-07-05
申请号：JP2010279319
申请日：2010-12-15
申请人： Kobe Steel Ltd , 株式会社神戸製鋼所
发明人： WAKAZONO TAKEHIKO , YOSHIKAWA TETSUYA , GLENN THOMPSON
IPC分类号： G01M17/02 , B60C19/00 , G01M1/02
摘要： PROBLEM TO BE SOLVED: To effectively restrict the deviation of an upper chuck with respect to a revolving shaft of a lower chuck due to separating force.SOLUTION: A tire testing device 1 includes: vertical frames 30a, 30b supported by a lower frame 20; a vertically movable beam 40 laid between the vertical frames 30a, 30b; an upper chuck 45 attached to the center in the longitudinal direction of the beam 40; a lower chuck 25 attached to the lower frame, and the like. The beam 40 is lowered from an upper standby position and fixed in a state that the upper and lower chucks 25, 45 are engaged with each other to hold a tire 10. In a view in a vertical direction, a revolving shaft 45x of the upper chuck 45 and support points 30x of the beam 40 at the vertical frames 30a, 30b arranged at equal intervals from the revolving shaft 45x placed therebetween are aligned on a straight line.
摘要翻译：要解决的问题：为了有效地限制由于分离力，上卡盘相对于下卡盘的旋转轴的偏差。解决方案：轮胎测试装置1包括：由下框架20支撑的垂直框架30a，30b; 布置在垂直框架30a，30b之间的可垂直移动的梁40; 沿着梁40的长度方向安装在中心的上卡盘45; 附接到下框架的下卡盘25等。梁40从上部备用位置下降，并且以上下卡盘25,45彼此接合以保持轮胎10的状态固定。在垂直方向上，上部的旋转轴45x 在设置在其间的旋转轴45x等间隔布置的垂直框架30a，30b处的光束40的支撑点30x对齐在直线上。版权所有（C）2012，JPO＆INPIT

3. 发明专利

JP2009300171A Tire testing machine and tire testing method 有权
标题翻译：轮胎试验机和轮胎试验方法
公开(公告)号：JP2009300171A
公开(公告)日：2009-12-24
申请号：JP2008153107
申请日：2008-06-11
申请人： Kobe Steel Ltd , 株式会社神戸製鋼所
发明人： SUMIMOTO YU , HONKE KOICHI , MURAKAMI MASAO , YOSHIKAWA TETSUYA , NONAKA TOSHIKATSU
IPC分类号： G01M1/16 , B60C19/00 , G01M17/02
CPC分类号： G01M17/022 , G01M1/045
摘要： PROBLEM TO BE SOLVED: To measure a dynamic balance of a tire accurately and easily by using a tire testing machine. SOLUTION: The tire testing machine 1 measures both the uniformity and dynamic balance of a tire T, and includes; a spindle 7 for driving the tire T to rotate about a vertical axis; a spindle housing 8 which supports the spindle 7 rotatably; and a rotating drum 19 rotatable about an axis parallel to an axis of the spindle 7 and movable toward and away from the tire T. The spindle housing 8 is fixed to a base 2 through a piezoelectric sensor 24 so that it bears a pressing force provided from the rotating drum 19. The piezoelectric sensor 24 is disposed within a plane including the axis of the spindle 7 and perpendicular to the pressing force. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：通过使用轮胎试验机来准确且容易地测量轮胎的动平衡。解决方案：轮胎试验机1测量轮胎T的均匀性和动平衡，并且包括：用于驱动轮胎T绕轴线旋转的主轴7; 主轴壳体8，其可旋转地支撑主轴7; 以及旋转滚筒19，其可绕平行于心轴7的轴线的轴线旋转并且可朝向和远离轮胎T移动。心轴壳体8通过压电传感器24固定到基座2，使得其具有提供的按压力压电传感器24设置在包括主轴7的轴线并垂直于按压力的平面内。版权所有（C）2010，JPO＆INPIT

4. 发明专利

JP2008277870A METHOD FOR FORMING Al-BASED ALLOY WIRING IN SEMICONDUCTOR DEVICE 审中-公开
标题翻译：在半导体器件中形成基于铝的合金接线的方法
公开(公告)号：JP2008277870A
公开(公告)日：2008-11-13
申请号：JP2008212944
申请日：2008-08-21
申请人： Kobe Steel Ltd , 株式会社神戸製鋼所
发明人： ONISHI TAKASHI , YASUNAGA TATSUYA , FUJII HIDEO , YOSHIKAWA TETSUYA , MUNEMASA ATSUSHI
IPC分类号： H01L21/3205 , H01L21/285 , H01L23/52
摘要： PROBLEM TO BE SOLVED: To provide a highly reliable method for forming wiring in a semiconductor device to stably exhibit high quality such as low electric resistivity, the denseness of film, and close contact with an insulating film. SOLUTION: A thin film 5 composed of Al or an Al alloy (hereafter referred to as Al-based metal) is formed, by a sputtering method, on the surface of the insulating film 2 having a recessed part 3 formed on a substrate. After that, high-temperature and high-pressure treatment is applied, and the Al-based metal is filled in the recessed part constituting the wiring in the semiconductor device. The operation of the sputtering is featured by being conducted under the following sputtering conditions. In the sputtering conditions a sputtering gas pressure is 0.5-1.1 mTorr; discharge power density is 3-15 W/cm 2 ; and substrate temperature is performed at 100-300°C. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于在半导体器件中形成布线的稳定性高的方法，以稳定地显示诸如低电阻率，膜的致密性和与绝缘膜紧密接触的高质量。解决方案：通过溅射法形成由Al或Al合金（以下称为Al基金属）构成的薄膜5，该绝缘膜2具有形成在其上的凹部3的绝缘膜2的表面基质。之后，施加高温高压处理，将Al系金属填充在构成半导体装置的配线的凹部中。溅射的操作的特征在于在以下溅射条件下进行。在溅射条件下，溅射气体压力为0.5-1.1毫托; 放电功率密度为3-15W / cm 2 SP / 2; 并且在100-300℃下进行基板温度。版权所有（C）2009，JPO＆INPIT

5. 发明专利

JP2004071960A Method for forming wiring film 审中-公开
公开(公告)号：JP2004071960A
公开(公告)日：2004-03-04
申请号：JP2002231595
申请日：2002-08-08
申请人： Kobe Steel Ltd , 株式会社神戸製鋼所
发明人： FUJII HIDEO , ONISHI TAKASHI , YOSHIKAWA TETSUYA
IPC分类号： H01L21/285 , H01L21/768
摘要： PROBLEM TO BE SOLVED: To provide a wiring film forming method for filling a hole of an insulating film with a wiring film even under a strict condition that the diameter of the hole is

6. 发明专利

JP2012145503A Spindle structure and tire testing machine having the same 有权
标题翻译：主轴结构及轮胎试验机
公开(公告)号：JP2012145503A
公开(公告)日：2012-08-02
申请号：JP2011005272
申请日：2011-01-13
申请人： Kobe Steel Ltd , 株式会社神戸製鋼所
发明人： WAKAZONO TAKEHIKO , YOSHIKAWA TETSUYA , FUJIEDA YASUHIKO
IPC分类号： G01M17/02 , B60C19/00
摘要： PROBLEM TO BE SOLVED: To provide spindle structure capable of preventing deterioration in test accuracy.SOLUTION: If a shaft center of an upper spindle 47 is misaligned or inclined with respect to a shaft center of a lower spindle 27 at the time a recess 47p of the upper spindle 47 is engaged with a protrusion 28p of a plunger 28 positioned at an end of the lower spindle 27, a laminated rubber bearing 41 displaces an upper end of an upper housing 46 and also an upper end of the upper spindle 47 so as to eliminate the misalignment and the inclination between the shaft centers.
摘要翻译：要解决的问题：提供能够防止测试精度降低的主轴结构。解决方案：如果上心轴47的凹部47p与柱塞28的突起28p接合，则上心轴47的轴心相对于下心轴27的轴心不对准或倾斜位于下心轴27的端部处，层叠橡胶轴承41使上壳体46的上端以及上心轴47的上端移位，以消除轴心之间的未对准和倾斜。版权所有（C）2012，JPO＆INPIT

7. 发明专利

JP2009180715A Tire testing device and tire testing method 审中-公开
标题翻译：轮胎测试设备和轮胎测试方法
公开(公告)号：JP2009180715A
公开(公告)日：2009-08-13
申请号：JP2008022782
申请日：2008-02-01
申请人： Kobe Steel Ltd , 株式会社神戸製鋼所
发明人： MURAKAMI MASAO , YOSHIKAWA TETSUYA , SOEJIMA MUNENORI
IPC分类号： G01M17/02 , B60C19/00
摘要： PROBLEM TO BE SOLVED: To reproduce the running state when a vehicle is made to run while mounting tires.
SOLUTION: A tire testing device, composed of a road surface movement mechanism 3 for running on a simulated road surface R and a tire holding mechanism 2 which holds the tire T freely moveable around a spindle axis 23, is characteristically provided with a radial movement mechanism 5 for moving the tire holding mechanism 2 in a radial direction, a camber angle imparting mechanism 66 by swinging the tire holding mechanism 2 centering the ground contact part between the tire T and a simulated road surface for imparting camber angle, and a vertical displacement mechanism 4 for moving the tire holding mechanism 2 in a vertical direction separately from the radial movement mechanism 5.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：在安装轮胎时使车辆行驶时再现运行状态。解决方案：轮胎测试装置由用于在模拟路面R上行驶的路面运动机构3和保持轮胎T的轮胎T保持绕主轴轴线23自由移动的轮胎测试装置特征地设置有径向移动机构5，用于使轮胎保持机构2沿径向移动;外倾角赋予机构66，通过使轮胎保持机构2摆动，使得接地部位在轮胎T和用于赋予外倾角的模拟路面之间; 垂直位移机构4，用于使轮胎保持机构2沿径向移动机构5分开地沿垂直方向移动。（C）版权所有（C）2009，JPO＆INPIT

8. 发明专利

JP2006041128A METHOD OF FORMING Cu-BASED WIRE FOR SEMICONDUCTOR DEVICE 有权
标题翻译：形成用于半导体器件的铜基线的方法
公开(公告)号：JP2006041128A
公开(公告)日：2006-02-09
申请号：JP2004217761
申请日：2004-07-26
申请人： Kobe Steel Ltd , 株式会社神戸製鋼所
发明人： ONISHI TAKASHI , YASUNAGA TATSUYA , FUJII HIDEO , YOSHIKAWA TETSUYA , MUNEMASA ATSUSHI
IPC分类号： H01L21/3205 , C23C14/14 , C23C14/34 , H01L21/285 , H01L23/52
CPC分类号： H01L21/2855 , H01L21/76882
摘要： PROBLEM TO BE SOLVED: To provide a reliable method of forming a Cu-based wire for a semiconductor device which stably shows high qualities such as low electrical resistivity, excellent denseness of a film and excellent adhesiveness with an insulation film.
SOLUTION: In the method of forming the Cu-based wire for the semiconductor device, after a thin film 5 consisting of Cu or Cu alloy ("Cu-based metal", hereafter) is formed by a sputtering method on the surface of the insulation film 2 having a recess formed on a substrate 1, high-temperature and high-pressure treatment is carried out and the recess is charged with the Cu-based metal to form the wire of the semiconductor device. The sputtering is carried out on conditions that the kind of sputtering gas is mixed gas containing hydrogen gas and inert gas of 5:95 to 20:80 mixing ratio (%) and that the temperature of the substrate is 0 to -20°C.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了提供一种可靠地形成半导体器件的Cu基线的可靠方法，其稳定地显示诸如低电阻率，优异的膜致密性和优异的与绝缘膜的粘合性的高质量。解决方案：在形成用于半导体器件的Cu基线的方法中，在通过溅射法在表面上形成由Cu或Cu合金（以下称为“Cu基金属”）构成的薄膜5之后在基板1上形成有凹部的绝缘膜2进行高温高压处理，用Cu系金属填充凹部，形成半导体装置的导线。溅射是在溅射气体的种类为含有氢气和惰性气体的混合比为5:95〜20:80的混合比（％），基板的温度为0〜-20℃的条件下进行的。版权所有（C）2006，JPO＆NCIPI

9. 发明专利

JP2005340640A Al base alloy wiring forming method of semiconductor device 有权
标题翻译： AL基线合金形成半导体器件的方法
公开(公告)号：JP2005340640A
公开(公告)日：2005-12-08
申请号：JP2004159627
申请日：2004-05-28
申请人： Kobe Steel Ltd , 株式会社神戸製鋼所
发明人： ONISHI TAKASHI , YASUNAGA TATSUYA , FUJII HIDEO , YOSHIKAWA TETSUYA , MUNEMASA ATSUSHI
IPC分类号： H01L21/285 , H01L21/28 , H01L21/3205 , H01L23/52
摘要： PROBLEM TO BE SOLVED: To provide a method for forming wiring for a reliable semiconductor device which stably exhibits high quality such as low electric resistance and excellent denseness and adhesion to an insulating film.
SOLUTION: Wiring of a semiconductor device is formed by forming a thin film 5 of Al or Al alloy (hereinafter, Al base metal) by sputtering on the surface of an insulating film 2 comprising a recess 3 formed on a substrate, and then applying high-temperature and high-pressure process so that the Al base metal is packed in the recess. The above sputtering is performed under conditions of 0.5-1.1 mTorr sputtering gas pressure, 3-15 W/cm
2 discharge power density, and 100-300°C substrate temperature.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种用于形成可靠的半导体器件的布线的方法，其稳定地表现出诸如低电阻和优异的致密性和对绝缘膜的粘附性的高质量。解决方案：通过在包括形成在基板上的凹部3的绝缘膜2的表面上通过溅射形成Al或Al合金（以下称为Al贱金属）的薄膜5来形成半导体器件的布线，以及然后施加高温和高压处理，使得Al贱金属包装在凹部中。上述溅射在0.5-1.1mTorr溅射气体压力，3-15W / cm 2 SP / 2放电功率密度和100-300℃基板温度的条件下进行。版权所有（C）2006，JPO＆NCIPI

10. 发明专利

JP2005333015A Method for desiccating microstructure, and microstructure obtained thereby 有权
标题翻译：微结构方法及其获得的微结构
公开(公告)号：JP2005333015A
公开(公告)日：2005-12-02
申请号：JP2004150819
申请日：2004-05-20
申请人： Dainippon Screen Mfg Co Ltd , Kobe Steel Ltd , 大日本スクリーン製造株式会社 , 株式会社神戸製鋼所
发明人： ONISHI TAKASHI , YAMAGATA MASAHIRO , YOSHIKAWA TETSUYA , MUNEMASA ATSUSHI , WATANABE KATSUMITSU , KOHORI TAKASHI , MIZOBATA IKUO , SAITO KIMITSUGU , MURAOKA YUSUKE
IPC分类号： F26B21/14 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To provide a method for desiccating a microstructure such as a semiconductor substrate after development by using liquefied carbon dioxide or supercritical carbon dioxide, wherein no pattern swelling or collapse occurs and wherein the amount is reduced of particles retained on the surfaces of the microstructure after desiccation, and to provide a microstructured body desiccated by this desiccating method.
SOLUTION: The method for desiccating a microstructure comprises a step wherein the microstructure is washed by a water-containing solvent A; a step wherein the solvent A is replaced by a solvent B containing a fluorine-containing compound a, a surfactant, and/or a compound having affinity for the fluorine-containing compound a and having a hydrophilic group; a step wherein the solvent B is replaced by a solvent C containing the fluorine-containing compound a and/or a fluorine-containing compound b different from the fluorine-containing compound a; a step wherein the solvent C is replaced by liquefied carbon dioxide or by supercritical carbon dioxide; and a step wherein desiccation is implemented. The process proceeds with the Na
+ concentration level held at ≤0.5 ng/ml in the solvent B and in the solvent C.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：待解决的问题：提供一种通过使用液化二氧化碳或超临界二氧化碳使显影后的微结构例如半导体基板干燥的方法，其中不发生图案膨胀或塌陷，并且其中保留的颗粒数量减少干燥后微观结构的表面，并提供通过干燥方法干燥的微结构体。解决方案：用于干燥微结构的方法包括其中微结构被含水溶剂A洗涤的步骤; 其中溶剂A被含有含氟化合物a，表面活性剂和/或对含氟化合物a具有亲水性的亲和性的化合物的溶剂B代替; 其中溶剂B被含有含氟化合物a的溶剂C和/或与含氟化合物a不同的含氟化合物b代替; 其中溶剂C被液化的二氧化碳或超临界二氧化碳代替; 以及执行干燥的步骤。在溶剂B和溶剂C中，该过程继续保持在≤0.5ng/ ml的Na + 浓度水平。（C）2006，JPO＆NCIPI

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