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1. 发明专利

JP2012015313A Semiconductor device having semiconductor element 审中-公开
标题翻译：具有半导体元件的半导体器件
公开(公告)号：JP2012015313A
公开(公告)日：2012-01-19
申请号：JP2010150214
申请日：2010-06-30
申请人： Kobe Steel Ltd , 株式会社神戸製鋼所
发明人： TACHIBANA TAKESHI , GOTO YASUSHI , OKUNO HIROYUKI , MAEDA TAKEAKI
IPC分类号： H01L21/52
CPC分类号： H01L2224/32225 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device with high reliability by reducing a strain stress due to thermal expansion occurring between semiconductor elements or between a semiconductor element and a circuit board.SOLUTION: A semiconductor device comprises at least one configuration in which a circuit board 1 and a semiconductor element 2 having an electrode 3 are bonded via a joint member. The joint member is composed of a stacked structure of an Al alloy layer 5 and a pure Al layer 6. The Al alloy layer is disposed at the electrode side of the semiconductor element and the pure Al layer is disposed at the circuit board side.
摘要翻译：要解决的问题：通过减少由于半导体元件之间或半导体元件和电路板之间发生的热膨胀引起的应变应力，提供具有高可靠性的半导体器件。解决方案：半导体器件包括至少一种配置，其中电路板1和具有电极3的半导体元件2经由接头构件接合。接合构件由Al合金层5和纯Al层6的层叠结构构成.Al合金层设置在半导体元件的电极侧，纯Al层设置在电路基板侧。版权所有（C）2012，JPO＆INPIT

2. 发明专利

JP2011174139A Electrolytic reduction apparatus for carbon dioxide 有权
标题翻译：二氧化碳电解还原装置
公开(公告)号：JP2011174139A
公开(公告)日：2011-09-08
申请号：JP2010039477
申请日：2010-02-25
申请人： Kobe Steel Ltd , 株式会社神戸製鋼所
发明人： TACHIBANA TAKESHI , YOKOTA YOSHIHIRO , MAEDA TAKEAKI
IPC分类号： C25B3/04 , C25B9/00 , C25B11/12
摘要： PROBLEM TO BE SOLVED: To provide an electrolytic reduction apparatus for carbon dioxide which performs electrolytic reduction of carbon dioxide at high current efficiency. SOLUTION: (1) The electrolytic reduction apparatus of carbon dioxide includes: a cathode; an anode; a power source for applying the voltage between the cathode and the anode; and an electrolytic bath performing electrolytic reduction of carbon dioxide at the cathode by electrolyzing a solution containing carbon dioxide, and comprises at least a part of a surface of the cathode of the electrolytic bath is made of conductive diamond. (2) The electrolytic reduction apparatus of carbon dioxide is provided at least a part of a surface of the anode of the electrolytic bath is made of conductive diamond. (3) The electrolytic reduction apparatus of carbon dioxide includes an ultraviolet light irradiation means for irradiating the surface of the conductive diamond of the cathode of the electrolytic bath with ultraviolet light. (4) The electrolytic bath is partitioned into an anode chamber and a cathode chamber by a diaphragm in the electrolytic reduction apparatus of carbon dioxide. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种以高电流效率进行二氧化碳的电解还原的二氧化碳的电解还原装置。解决方案：（1）二氧化碳的电解还原装置包括：阴极; 阳极; 用于在阴极和阳极之间施加电压的电源; 以及通过电解含有二氧化碳的溶液在阴极进行二氧化碳的电解还原的电解浴，并且包括电解浴的阴极的至少一部分表面由导电金刚石制成。（2）二氧化碳的电解还原装置是电解池的阳极表面的至少一部分由导电金刚石制成。（3）二氧化碳的电解还原装置包括用紫外线照射电解槽的阴极的导电金刚石的表面的紫外线照射装置。（4）在二氧化碳的电解还原装置中，通过隔膜将电解槽分隔成阳极室和阴极室。版权所有（C）2011，JPO＆INPIT

3. 发明专利

JP2010185665A Material for x-ray transmission window, and x-ray transmission window with the material 审中-公开
标题翻译： X射线传输窗口材料和X射线传输窗口与材料
公开(公告)号：JP2010185665A
公开(公告)日：2010-08-26
申请号：JP2009028008
申请日：2009-02-10
申请人： Kobe Steel Ltd , 株式会社神戸製鋼所
发明人： TACHIBANA TAKESHI , YOKOTA YOSHIHIRO
IPC分类号： G21K1/00 , C01B31/06 , C30B29/04 , G01T7/00 , G21K5/00
摘要： PROBLEM TO BE SOLVED: To provide a material for an X-ray transmission window which hinders a diffraction in the transmission of X rays even if a diamond window material is thick and an X-ray transmission window with the window material. SOLUTION: The material 1 for the X-ray transmission window is made of polycrystal diamond where the average size Za of diamond particles is ≥0.1 μm and ≤10 μm, the thickness of the window material 1 is ≥8Za 1/3 and the average roughness Ra of both sides of the window material 1 is set at ≤100 nm. Preferably, its thermal conductivity is ≥400 W/mK, as to the polycrystal diamond. More preferably, the thickness of the window material 1 is ≥100 μm. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：即使金刚石窗材料较厚，并且具有窗口材料的X射线透射窗，提供用于阻止X射线透射中的衍射的X射线透射窗的材料。解决方案：用于X射线透射窗的材料1由多晶金刚石制成，其中金刚石颗粒的平均尺寸Za≥0.1μm和≤10μm，窗材料1的厚度≥8Za 1/3窗口材料1的两侧的平均粗糙度Ra设定为≤100nm。优选地，对于多晶金刚石，其热导率为≥400W/ mK。更优选地，窗材料1的厚度≥100μm。版权所有（C）2010，JPO＆INPIT

4. 发明专利

JP2009192313A Beam detection member and beam detector using it 有权
标题翻译：光束检测成员和使用它的光束检测器
公开(公告)号：JP2009192313A
公开(公告)日：2009-08-27
申请号：JP2008032008
申请日：2008-02-13
申请人： Kobe Steel Ltd , 株式会社神戸製鋼所
发明人： TACHIBANA TAKESHI , YOKOTA YOSHIHIRO
IPC分类号： G01T1/29 , G01T1/20 , G01T1/24
摘要： PROBLEM TO BE SOLVED: To provide a beam detection member and a beam detector using it, capable of exciting visible light more efficiently from a radiation light beam, a soft X-ray beam or the like in the range from high energy to low energy, and detecting its position or an intensity distribution highly accurately and stably for a long period, and manufacturable at lower cost than a conventional detection device. SOLUTION: In the beam detection member 2 for detecting the position or the intensity of a beam 7, a beam irradiation part 6 for irradiating the beam 7 comprises a polycrystal diamond film 4 containing boron (B) averagely 10-150 ppm, and the boron (B) concentration in the polycrystal diamond 4 has an uneven concentration distribution in the film thickness direction of the polycrystal diamond film 4. The beam detector 1 is constituted of such a beam detection member 2 and excitation light observation means 3, 3a for observing excited excitation light 8, 8a. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种使用它的光束检测部件和光束检测器，其能够在从高能量到高能量的范围内从辐射光束，软X射线束等更有效地激发可见光低能量，并且长期高度准确和稳定地检测其位置或强度分布，并且可以以比常规检测装置更低的成本制造。解决方案：在用于检测光束7的位置或强度的光束检测部件2中，用于照射光束7的光束照射部分6包括平均为10-150ppm的硼（B）的多晶金刚石膜4，并且多晶金刚石4中的硼（B）浓度在多晶金刚石膜4的膜厚度方向上具有不均匀的浓度分布。光束检测器1由这种光束检测部件2和激发光观察装置3,3a 用于观察激发的激发光8,8a。版权所有（C）2009，JPO＆INPIT

5. 发明专利

JP2008047498A Electron emitter material, and electron emission application device 有权
标题翻译：电子发射材料和电子发射应用器件
公开(公告)号：JP2008047498A
公开(公告)日：2008-02-28
申请号：JP2006224422
申请日：2006-08-21
申请人： Kobe Steel Ltd , 株式会社神戸製鋼所
发明人： KOBASHI KOJI , TACHIBANA TAKESHI , ICHIHARA CHIKARA , KOBAYASHI AKIRA
IPC分类号： H01J1/304
摘要： PROBLEM TO BE SOLVED: To provide an electron emitter material excelling in durability and capable of large-current field electron emission; and an electron emission application device using such an electron emitter material. SOLUTION: This electron emitter material is formed by adsorbing diamond powder to a surface of carbon foam, and thereafter growing diamond on the carbon foam by a chemical vapor deposition (CVD) treatment. In the electron emitter material, the diamond powder is nano-diamond powder. This electron emission application device is composed by installing an electron extracting grid electrode on the front surface of the electron emitter material. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供耐久性优异且能够实现大电流场电子发射的电子发射体材料; 以及使用这种电子发射体材料的电子发射施加装置。解决方案：该电子发射体材料通过将金刚石粉末吸附到碳泡沫表面上形成，然后通过化学气相沉积（CVD）处理在碳泡沫上生长金刚石。在电子发射体材料中，金刚石粉末是纳米金刚石粉末。该电子发射施加装置通过在电子发射体材料的前表面上安装电子提取栅电极而构成。版权所有（C）2008，JPO＆INPIT

6. 发明专利

JP2007277088A Diamond-coated non-diamond carbon member 有权
标题翻译：金刚石非金刚石碳素会员
公开(公告)号：JP2007277088A
公开(公告)日：2007-10-25
申请号：JP2007157883
申请日：2007-06-14
申请人： Kobe Steel Ltd , 株式会社神戸製鋼所
发明人： YOKOTA YOSHIHIRO , KAWAKAMI NOBUYUKI , TACHIBANA TAKESHI
IPC分类号： C30B29/04 , C01B31/02 , C01B31/04 , C01B31/06 , C04B35/52 , C23C16/27
摘要： PROBLEM TO BE SOLVED: To provide a diamond-coated non-diamond carbon member which is obtained by using a non-diamond carbon material low in resistance to the etching action by activated hydrogen as a base material. SOLUTION: The diamond-coated non-diamond carbon member comprises a base material 1 composed of non-diamond carbon, an intermediate layer composed of a fine crystal diamond film 2 which is formed on the base material 1 and has an average crystallite diameter of ≤10 nm, and a diamond film 3 which is formed on the intermediate layer and has an average crystallite diameter of ≥20 nm. It is preferable that the base material 1 is composed of amorphous carbon, graphite or a carbon material subjected to a hot hydrostatic pressing treatment. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种金刚石涂层的非金刚石碳材料，其通过使用低活性氢作为基材的耐蚀刻作用的非金刚石碳材料而获得。金刚石涂层的非金刚石碳材料包括由非金刚石碳组成的基材1，由形成在基材1上并具有平均微晶的细晶金刚石膜2构成的中间层直径≤10nm，金刚石膜3形成在中间层上，平均微晶直径≥20nm。优选基材1由无定形碳，石墨或经受热静液压处理的碳材料构成。版权所有（C）2008，JPO＆INPIT

7. 发明专利

JP2007191356A Nitrogen-doped diamond film and its producing method 审中-公开
标题翻译：氮化金刚石薄膜及其生产方法
公开(公告)号：JP2007191356A
公开(公告)日：2007-08-02
申请号：JP2006011557
申请日：2006-01-19
申请人： Kobe Steel Ltd , 株式会社神戸製鋼所
发明人： KOBASHI KOJI , YOKOTA YOSHIHIRO , KAWAKAMI NOBUYUKI , TACHIBANA TAKESHI , HAYASHI KAZUYUKI
IPC分类号： C30B29/04 , C23C16/27 , C23C16/511 , H01L21/205
摘要： PROBLEM TO BE SOLVED: To provide a method for producing an n-type semiconductor diamond film doped with highly concentrated nitrogen atoms using a microwave plasma CVD method. SOLUTION: A mixed gas where one or more kinds of gases selected from among methylamine, dimethylamine and trimethylamine are diluted with hydrogen or a mixed gas where one or more kinds of gases selected from among methylamine, dimethylamine and trimethylamine, a hydrocarbon gas and a hydrogen gas are mixed is used as a raw material gas. A nitrogen-doped diamond film containing nitrogen atoms of 10 20 cm -3 or more on a substrate surface is formed by the microwave plasma chemical vapor deposition method at gas pressure of 80 Torr (10,664 Pa) or more. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供使用微波等离子体CVD法制造掺杂有高浓度氮原子的n型半导体金刚石膜的方法。解决方案：将选自甲胺，二甲胺和三甲胺的一种或多种气体用氢气或其中选自甲胺，二甲胺和三甲胺中的一种或多种气体的混合气体，烃气体和氢气混合用作原料气体。通过微波等离子体化学气相沉积法，在气体压力为80°的条件下，形成含有氮原子为10 20 -3 乇（10,664帕）以上。版权所有（C）2007，JPO＆INPIT

8. 发明专利

JP2007141974A Diamond semiconductor element and manufacturing method thereof 有权
标题翻译：金刚石半导体元件及其制造方法
公开(公告)号：JP2007141974A
公开(公告)日：2007-06-07
申请号：JP2005330888
申请日：2005-11-15
申请人： Kobe Steel Ltd , 株式会社神戸製鋼所
发明人： KAWAKAMI NOBUYUKI , YOKOTA YOSHIHIRO , HAYASHI KAZUYUKI , TACHIBANA TAKESHI , KOBASHI KOJI
IPC分类号： H01L29/78 , H01L21/28 , H01L21/336
CPC分类号： H01L29/6653
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor element which assures excellent voltage resistance, heat resistance, radioactive ray resistance, and a high operation velocity, enables reduction in channel region, and ensures the high-precision manufacturing of a diamond semiconductor element ensuring a higher response characteristic of an element. SOLUTION: On the front surface of a first diamond semiconductor region 1; an insulating film 2, an electrode metal layer 3, and a sacrifice layer 4 are laminated, and a resist 5 is patter-formed in a local area on the sacrifice layer 4. After etching the first sacrifice layer, the electrode metal layer and the insulating film using the resist 5 as a mask, the resist 5 is removed to form a pattern of the laminated material of the insulating film 2, the electrode metal layer 3, and the first sacrifice layer 4 on the first diamond semiconductor region 1. Thereafter, on the first diamond semiconductor region 1, a high concentration doped layer 7 (comprising the second and third diamond semiconductor regions) is formed by doping an impurity. Subsequently, the sacrifice layer 4 is removed by etching to form an electrode metal 8 on the high-concentration doped layer 7. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了提供确保优异的耐电压性，耐热性，放射线电阻和高操作速度的半导体元件的制造方法，能够减少沟道区域，并且确保高精度制造确保元件的较高响应特性的金刚石半导体元件。解决方案：在第一金刚石半导体区域1的前表面上; 绝缘膜2，电极金属层3和牺牲层4，并且在牺牲层4的局部区域中形成抗蚀剂5.在蚀刻第一牺牲层之后，电极金属层和使用抗蚀剂5作为掩模的绝缘膜，去除抗蚀剂5，以在第一金刚石半导体区域1上形成绝缘膜2，电极金属层3和第一牺牲层4的层压材料的图案。之后在第一金刚石半导体区域1上，通过掺杂杂质形成高浓度掺杂层7（包括第二和第三金刚石半导体区域）。随后，通过蚀刻除去牺牲层4，以在高浓度掺杂层7上形成电极金属8.版权所有（C）2007，JPO＆INPIT

9. 发明专利

JP2007051327A Film deposition method 有权
标题翻译：膜沉积法
公开(公告)号：JP2007051327A
公开(公告)日：2007-03-01
申请号：JP2005237065
申请日：2005-08-18
申请人： Kobe Steel Ltd , 株式会社神戸製鋼所
发明人： YOKOTA YOSHIHIRO , KAWAKAMI NOBUYUKI , HAYASHI KAZUYUKI , TACHIBANA TAKESHI , KOBASHI KOJI
IPC分类号： C23C16/02 , C30B29/04 , H01L21/316 , H01L21/318
摘要： PROBLEM TO BE SOLVED: To provide a film deposition method where an oxide film or a nitride film can be deposited on a base material composed of a carbon material such as a crystalline carbon material or an amorphous carbon material. SOLUTION: The surface of a substrate composed of a carbon material such as a diamond substrate in which a diamond thin film is deposited on a single crystal diamond base material is subjected to plasma treatment, radical treatment, chemical treatment or treatment in which they are combined, thus oxygen and/or nitrogen is adsorbed thereon. Thereafter, an oxide film or a nitride film is deposited on the surface of the diamond substrate with the oxygen and/or nitrogen adsorbed by an atomic layer deposition process where an organic metal compound and an oxidizing agent or a nitriding agent are alternately fed. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种可以将氧化膜或氮化物膜沉积在由诸如结晶碳材料或无定形碳材料的碳材料构成的基材上的成膜方法。解决方案：将由金刚石基底等金属基材构成的基板表面沉积在单晶金刚石基材上进行等离子体处理，自由基处理，化学处理或处理，其中它们结合，因此氧和/或氮被吸附在其上。此后，氧化膜或氮化膜沉积在金刚石衬底的表面上，氧和/或氮被原子层沉积工艺吸附，其中有机金属化合物和氧化剂或氮化剂交替进料。版权所有（C）2007，JPO＆INPIT

10. 发明专利

JP2006216716A Diamond field effect transistor and its manufacturing method 有权
标题翻译：金刚石场效应晶体管及其制造方法
公开(公告)号：JP2006216716A
公开(公告)日：2006-08-17
申请号：JP2005026965
申请日：2005-02-02
申请人： Kobe Steel Ltd , 株式会社神戸製鋼所
发明人： KOBASHI KOJI , YOKOTA YOSHIHIRO , KAWAKAMI NOBUYUKI , HAYASHI KAZUYUKI , TACHIBANA TAKESHI
IPC分类号： H01L29/78
摘要： PROBLEM TO BE SOLVED: To provide a diamond field effect transistor having a superior dielectric strength, and also to provide its manufacturing method.
SOLUTION: Low-resistance diamond layers 2a and 2b which will become a source region and a drain region, respectively, are locally formed on a diamond substrate 1. Between the low-resistance diamond layers 2a and 2b and on the facing edges of these layers, a high-resistance diamond layer 3 is formed of undoped diamond or of diamond lightly doped with B. On the low-resistance diamond layers 2a and 2b, a source electrode 5 and a drain electrode 6 are formed, respectively, and on the high-resistance diamond layer 3, a gate electrode 7 is formed via a gate insulation film 4. The gate insulation film 4 is a multilayered film consisting of two or more layers selected from among a silicon oxide layer, aluminum nitride layer, alumina layer, diamond carbon layer, silicon nitride layer, zirconia layer, strontium titanate layer, barium titanate layer, and sialon layer.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供具有优异的介电强度的金刚石场效应晶体管，并且还提供其制造方法。解决方案：将分别成为源极区和漏极区的低电阻金刚石层2a和2b局部地形成在金刚石衬底1上。在低电阻金刚石层2a和2b之间以及面对边缘在这些层中，高电阻金刚石层3由未掺杂的金刚石或用B轻掺杂的金刚石形成。在低电阻金刚石层2a和2b上分别形成源电极5和漏电极6，在高电阻金刚石层3上，通过栅极绝缘膜4形成栅电极7.栅极绝缘膜4是由选自氧化硅层，氮化铝层，氧化铝中的两层以上构成的多层膜层，金刚石碳层，氮化硅层，氧化锆层，钛酸锶层，钛酸钡层和赛隆层。版权所有（C）2006，JPO＆NCIPI

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