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1. 发明专利

JPS582022A THIN FILM FORMATION 失效
公开(公告)号：JPS582022A
公开(公告)日：1983-01-07
申请号：JP10030581
申请日：1981-06-27
申请人： KOGYO GIJUTSUIN
发明人： SATOU MAMORU
IPC分类号： C23C14/06 , C23C14/22 , H01L21/203 , H01L21/31
摘要： PURPOSE:To combine a thin film forming and vacuum deposition techniques utilizing ion beams to obtain a thin film of high purity substance, by irradiating only required ion sources of accelerated ions onto a substrate with the vapor of evaporation metal irradiated onto the substrate. CONSTITUTION:Gas such as N is introduced through a leakage valve 1 into the ion source 2 for ionization here later to be accelerated in an accelerator 3 passing through an analysing magnet 4 to electrically select only desired ion sources supplied to a reaction chamber 5. Selected ions supplied to the reaction chamber 5 kept at high vacuum are irradiated onto an irradiation plane of the substrate 6 installed in the reaction chamber to provide even ion currents. A metal deposition device is installed in the reaction chamber 5 to contain for example, a metal evaporat-deposited on an electron gun 7, which is irradiated onto the same substrate 5 for the irradiation of said ions for vacuum deposition. As for the ion-irradiation and metal vapor-irradiation, the two can be performed either simultaneously or alternately.

2. 发明专利

JPS60239375A POROUS CERAMIC THIN MEMBRANE AND MANUFACTURE 失效
公开(公告)号：JPS60239375A
公开(公告)日：1985-11-28
申请号：JP9717784
申请日：1984-05-14
申请人： KOGYO GIJUTSUIN , KYOCERA CORP
发明人： SATOU MAMORU , YAMAGUCHI KOUICHI , MATSUMOTO TAKESHI
IPC分类号： C04B38/00

3. 发明专利

JPS60169559A MANUFACTURE OF HIGH HARDNESS BORON NITRIDE FILM 失效
公开(公告)号：JPS60169559A
公开(公告)日：1985-09-03
申请号：JP2301784
申请日：1984-02-13
申请人： KOGYO GIJUTSUIN , KYOCERA CORP
发明人： SATOU MAMORU , YAMAGUCHI KOUICHI
IPC分类号： C23C14/00 , C23C14/06 , C23C14/22 , C23C14/24 , C23C14/32
摘要： PURPOSE:To obtain a high hardness BN film of high quality when a BN film is manufactured by vacuum deposition and ion irradiation, by adjusting the ratio between boron contained in an evaporating source and nitrogen contained in ions to a prescribed value and by applying prescribed acceleration energy. CONSTITUTION:Boron is vacuum-deposited on a substrate from an evaporating source contg. boron, and ions are irradiated on the substrate from an ion generating source for generating ions contg. nitrogen. At this time, the ratio between boron contained in the evaporating source and nitrogen contained in the ions is adjusted to B/N=4-25, and ion acceleration energy per one atom in the ions is regulated to 5-100keV. Said vacuum deposition and irradiation are carried out in an atmosphere contg. nitrogen atoms or a nitrogen compound activated to a lower energy level than the ions. Thus, a high-hardness BN film of high quality consisting of cubic BN and hexagonal close packing BN is obtd.

4. 发明专利

JPS60243287A THIN FILM OF POROUS AMORPHOUS METAL OR ITS ALLOY AND ITS MANUFACTURE 失效
公开(公告)号：JPS60243287A
公开(公告)日：1985-12-03
申请号：JP9717684
申请日：1984-05-14
申请人： KOGYO GIJUTSUIN , KYOCERA CORP
发明人： SATOU MAMORU , YAMAGUCHI KOUICHI
IPC分类号： C22C1/08 , B01D39/10 , C22C38/18 , C22C45/02 , C23F1/00 , C23F1/02 , C23F4/00 , C23F4/04
摘要： PURPOSE:To manufacture a thin film made of porous amorphous metal or its alloy by irradiating high speed charged particles to amorphous quality metal or alloy thin from right angle direction to form many track holes therein, treating the thin film by etching liquid. CONSTITUTION:When Fe-Cr alloy, etc. having a prescribed compsn. changes to crystal, the chemical corrosion property is much higher compared with amorphous. The amorphous metal or alloy thin film 1 is sent continuously by rolls D, D, and high speed charged particles of He , O , H , F , alpha particle, proton or deuteron are irradiated thereto from almost right angle crossing direction by an ion accerelator A. In this way, the unidirectional many track holes 10 are formed with penetrating the film 1. Next, the film 1 is treated by chemical etching liquid of hot brine, etc. to dissolve the circumference 11 of the hole 10 varied to crystal, the holes 10 are adjusted to almost cylindrical or truncated cone shape, and the porous amorphous metal or alloy thin film is obtained.

5. 发明专利

JPS60223113A FORMING METHOD OF THIN-FILM 失效
公开(公告)号：JPS60223113A
公开(公告)日：1985-11-07
申请号：JP6780485
申请日：1985-03-30
申请人： KOGYO GIJUTSUIN , KYOCERA CORP
发明人： SATOU MAMORU , YAMAGUCHI KOUICHI
IPC分类号： H01L21/31 , H01L21/203
摘要： PURPOSE:To obtain a desired synthetic thin-film with high quality by directing the path of ion beams and the path of an evaporation substance in the same direction and uniformly irradiating the surface in a shadowless manner in a thin- film forming method through the combination of ion beam deposition and vacuum deposition. CONSTITUTION:An evaporation substance 16 held by a holding mechanism 15, a plasma generating region 17 for dissociating a gas for generating ions into ions and electrons, an ion beam accelerating region 19, which accelerates ions generated and projects them onto a base body 18, and the base body 18 supported by a support mechanism 20 are arranged in this order while being substantially aligned in a straight line. Consequently, ion beams and the evaporation substance can be projected completely to the base body at the same time from the same direction, and the surface is irradiated uniformly in a shadowless manner, thus forming a homogeneous thin-film having high quality. Since the evaporation substance is projected to the base body through the plasma generating region and the ion accelerating region, the evaporation substance can be activated to a high degree, and the evaporation substance and ions can be reacted more easily.

6. 发明专利

JPS60221566A THIN FILM FORMING DEVICE 失效
公开(公告)号：JPS60221566A
公开(公告)日：1985-11-06
申请号：JP7923184
申请日：1984-04-18
申请人： KOGYO GIJUTSUIN , KYOCERA CORP
发明人： SATOU MAMORU , YAMAGUCHI KOUICHI
IPC分类号： C23C14/32 , C23C14/22 , C23C14/30
摘要： PURPOSE:To provide a titled device which eliminates the need for a power source for supplying electron and reduces energy consumption by introducing a gas into said device, dissociating the same to ion and electron, irradiating the ion on a substrate and irradiating the electron as an electron beam on a metallic material. CONSTITUTION:An ion forming gas is introduced into a plasma generating chamber 3 from an introducing pipe 1 and plasma is generated in a plasma generating region 2 by the thermion released from a filament 4 and a magnet 5 for generating plasma by which the gas is dissociated to ion and electron in the ion beam deposition of a thin film forming device. The ion forms an ion beam by a lead- out electrode 6. The ion beam enters a reaction chamber 7 where energy is given to the beam from a DC power source 8 to irradiate the substrate 9. On the other hand, the electron is focused by a focusing magnet 12 and irradiates the metallic material 10 for vapor deposition in a copper hearth 11 thus heating and evaporating the material. The evaporated material is accelerated by the power source 8 and is ionized in the stage of passing through the region 2. The ion is combined chemically with the above-mentioned gaseous ion and is deposited by evaporation on the substrate 9 on which the thin film is formed.

7. 发明专利

JPS60181262A PRODUCTION OF BORON NITRIDE FILM HAVING HIGH HARDNESS 失效
公开(公告)号：JPS60181262A
公开(公告)日：1985-09-14
申请号：JP3613784
申请日：1984-02-29
申请人： KOGYO GIJUTSUIN , KYOCERA CORP
发明人： SATOU MAMORU , YAMAGUCHI KOUICHI
IPC分类号： C23C14/00 , C23C14/06 , C23C14/22 , C23C14/24 , C23C14/32
摘要： PURPOSE:To form easily a film consisting of cubic BN or hexagonal closest packing BN on the surface of a base body installed in a vacuum reaction chamber by depositing B by evaporation from a B vapor source to the surface of the base body and irradiating accelerated N2 ions thereto. CONSTITUTION:Gaseous N2 is introduced into an ion source 2 and is ionized and the ionized N2 is accelerated by an accelerator 3 by which the ion accelerating energy is given thereto. Only the necessary ion seed is magnetically selected by an analyzing magnet 4 and is supplied to a reaction chamber 5. The inside of the chamber 5 is maintained at a high vacuum by a vacuum pump 6 and a base body 7 of a silicon plate or the like is preliminarily attached therein. The above- mentioned ion seed is irradiated to said body. On the other hand, B is heated and evaporated by electron beam heating, etc. from a vapor deposition device 10 provided with a vapor source contg. B and is deposited by evaporation on the body 7 charged negative by a bias power source 15. The film consisting of the cubic BN or hexagonal closest packing BN having excellent thermal impact resistance, heat conductivity, hardness and wear resistance is formed on the body 7.

8. 发明专利

JPS6063372A MANUFACTURE OF THIN BORON NITRIDE FILM OF HIGH HARDNESS 失效
公开(公告)号：JPS6063372A
公开(公告)日：1985-04-11
申请号：JP17121783
申请日：1983-09-19
申请人： KOGYO GIJUTSUIN , TOSHIBA TUNGALOY CO LTD
发明人： SATOU MAMORU , SADAHIRO TAKESHI
IPC分类号： C23C14/06 , C23C14/00 , C23C14/24 , C23C16/34 , C23C16/50 , C23C16/511
摘要： PURPOSE:To manufacture a thin boron nitride film of high hardness contg. cubic boron nitride as the principal component on the surface of a substrate by properly regulating the atomic ratio between boron and nitrogen contained in an evaporating source and an ion seed and the quantity of energy for accelerating ions. CONSTITUTION:An evaporating source contg. boron is vapor-deposited on a substrate, and an accelerated ion seed is irradiated simultaneously with the vapor deposition to form a thin boron nitride film of high hardness on the substrate. The vapor deposition and the irradiation may be alternately carried out. At this time, the atomic ratio between boron and nitrogen (B/N) contained in the evaporating source and the ion seed is regulated to 0.5-3, and the quantity of energy for accelerating ions in the ion seed is regulated to 5-60KeV per one boron, nitrogen or inert gas atom contained in the ion seed.

9. 发明专利

JPS5576060A METAL SURFACE COLORING METHOD 失效
公开(公告)号：JPS5576060A
公开(公告)日：1980-06-07
申请号：JP15021078
申请日：1978-12-04
申请人： KOGYO GIJUTSUIN
发明人： KAMIJIYOU OSAO , ISHIDA TADASHI , SATOU MAMORU
IPC分类号： C22F1/00 , C23C8/02 , C23C8/34 , C23C14/48
摘要： PURPOSE:To obtain a colored metal with surperior heat resistance by inplanting ions into the surface of a transition metal followed by heating to a specified temp. or above. CONSTITUTION:Ions of Ca, B, Sr, or the like are introduced into extraction and acceleration system 2 from ion source 1, accelerated, and sent to mass spectrographic system 3. In system 3 ions with desired kinetic energy and mass are taken out, and in focusing deflection system 4 they are adjusted to an ion beam serving as a spot for a suitable system. This beam is implanted into a transistion metal plate in sample system 5 by collision. The energy range of ions implanted is pref. 1- 500KeV, and the amt. of them 10 -10 /cm . The ion-implanted metal is then heated to 400 deg.C or above, pref. 400-600 deg.C to clearly color the metal surface. The transition metal includes Ti, V, Cr, Fe, Co, etc., esp. pref. Ti.

10. 发明专利

JPS52136558A PREPARATION FOR MATERIAL FOR ELECTRON DISCHARGING BODY OF GOOD PERFORMANCE 失效
公开(公告)号：JPS52136558A
公开(公告)日：1977-11-15
申请号：JP5395576
申请日：1976-05-11
申请人： KOGYO GIJUTSUIN
发明人： ISHIDA TADASHI , SATOU MAMORU , FUKUI IKUE
IPC分类号： H01J9/04 , H01J1/14 , H01J1/20
摘要： PURPOSE:To obtain the electron discharging material of good performance, which is excellent in the electron discharging efficiency, by irradiating ion of elements belonging to I group a subgroup and II group a subbroup of the periodic table into tungsten.

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