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1. 发明专利

JP2004186320A Composition for forming silicon film, and solar battery 审中-公开
公开(公告)号：JP2004186320A
公开(公告)日：2004-07-02
申请号：JP2002350155
申请日：2002-12-02
申请人： Jsr Corp , Jsr株式会社 , Kokusai Kiban Zairyo Kenkyusho:Kk , Sharp Corp , シャープ株式会社 , 株式会社国際基盤材料研究所
发明人： MATSUKI YASUO , KATO HITOSHI , HAYAKAWA HISASHI , YAMAMOTO HIROSHI , ENDO MASAYUKI , TAKEUCHI YASUMASA
IPC分类号： C01B33/12 , C09D1/00 , H01L21/20 , H01L21/208 , H01L31/04
CPC分类号： Y02E10/546
摘要： PROBLEM TO BE SOLVED: To provide a composition for efficiently and easily forming a polycrystalline silicon film for a solar battery which has a desired film thickness, to provide a method of manufacturing the polycrystalline silicon film, and also to provide a solar battery. SOLUTION: The composition for forming a silicon film for a solar battery is provided which contains silane of a high order expressed by Formula (1) Si n X m , where X is hydrogen atoms or halogen atoms, n is an integer of 11 or larger, m is (2n-2), 2n, or (2n+2), cyclopentasilane, silicon particles whose dangling bond density is 1×10 17 /cm 3 or below, and dispersion medium. The method of manufacturing the polycrystalline silicon film by heating a film of the composition and then irradiating light on it, and the solar battery including the polycrystalline silicon film, are also provided. COPYRIGHT: (C)2004,JPO&NCIPI

2. 发明专利

JP2005332913A Method for forming silicon film for solar battery, and solar battery 审中-公开
标题翻译：用于形成太阳能电池的硅膜的方法和太阳能电池
公开(公告)号：JP2005332913A
公开(公告)日：2005-12-02
申请号：JP2004148769
申请日：2004-05-19
申请人： Jsr Corp , Jsr株式会社 , Kokusai Kiban Zairyo Kenkyusho:Kk , Sharp Corp , シャープ株式会社 , 株式会社国際基盤材料研究所
发明人： IWAZAWA HARUO , O DOUKAI , YAMAMOTO HIROSHI , HAYAKAWA HISASHI , ENDO MASAYUKI , TAKEUCHI YASUMASA
IPC分类号： H01L31/04
CPC分类号： Y02E10/546
摘要： PROBLEM TO BE SOLVED: To provide a method for easily forming a silicon film having performance appropriate as a semiconductor layer used for a solar battery, and a solar battery using the silicon film. SOLUTION: A method for forming a silicon film for a solar battery includes the steps of coating a substrate with a composition containing silicon particles and high-order silane compound; and heating resultant coating under pressure lower than that of the coating process, and a solar battery including at least one layer of silicon films formed by the method inside a cell. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种容易地形成具有适合作为用于太阳能电池的半导体层的性能的硅膜的方法和使用该硅膜的太阳能电池。解决方案：一种用于形成太阳能电池用硅膜的方法包括以下步骤：用含有硅颗粒和高级硅烷化合物的组合物涂覆基材; 并且在比所述涂覆工艺低的压力下加热得到的涂层，以及包括通过所述方法在所述电池内形成的至少一层硅膜的太阳能电池。版权所有（C）2006，JPO＆NCIPI

3. 发明专利

JP2010062593A Substrate for photoelectric converter 有权
标题翻译：光电转换器基板
公开(公告)号：JP2010062593A
公开(公告)日：2010-03-18
申请号：JP2009286555
申请日：2009-12-17
申请人： Sharp Corp , シャープ株式会社
发明人： NASUNO YOSHIYUKI , KOHAMA NORIYOSHI , NISHIMURA KAZUHITO , HAYAKAWA HISASHI
IPC分类号： H01L31/04
CPC分类号： H01L31/0236 , H01L31/022466 , H01L31/022483 , H01L31/02363 , H01L31/02366 , H01L31/076 , H01L31/1884 , Y02E10/548
摘要： PROBLEM TO BE SOLVED: To provide a substrate for a photoelectric converter that secures high transmittance even when a transparent conductive layer has a thick film thickness, a substrate for a photoelectric converter that has both high transmittance and a high haze rate, and a substrate for a photoelectric converter that attains high transmittance, a high haze ratio and low sheet resistance at the same time. SOLUTION: A substrate 1 for a photoelectric converter includes a first transparent conductive layer 5 formed on a surface region which is at least a part of a transparent substrate 3, and the first transparent conductive layer 5 has at least one opening portion 7 for exposing the transparent substrate 3 at least at the part of the transparent substrate 3. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了提供即使当透明导电层具有厚膜厚度时也确保高透射率的光电转换器的基板，具有高透射率和高雾度率的光电转换器用基板，以及用于光电转换器的基板，其同时实现高透射率，高雾度比和低薄层电阻。解决方案：用于光电转换器的基板1包括形成在作为透明基板3的至少一部分的表面区域上的第一透明导电层5，并且第一透明导电层5具有至少一个开口部7 用于至少在透明基板3的一部分处露出透明基板3.版权所有（C）2010，JPO＆INPIT

4. 发明专利

JP2005268547A Photoelectric converter 有权
标题翻译：光电转换器
公开(公告)号：JP2005268547A
公开(公告)日：2005-09-29
申请号：JP2004079048
申请日：2004-03-18
申请人： Sharp Corp , シャープ株式会社
发明人： SUGITA YOSHITAKA , HAYAKAWA HISASHI
IPC分类号： H01L31/04
CPC分类号： Y02E10/50
摘要： PROBLEM TO BE SOLVED: To provide a photoelectric converter obtaining high photoelectric conversion efficiency without adding carbon in high concentration to a p-type layer or n-type layer. SOLUTION: The photoelectric converter comprises a photoelectric conversion layer constituted by laminating a first conductive layer of semiconductor, an i-type layer of microcrystal semiconductor, and a second conductive layer of semiconductor in this order. At least one of the first conductive layer and the second conductive layer is the carbon-containing layer of microcrystal silicon containing a carbon atom. High photoelectric conversion efficiency is obtained in the case where the volume of carbon contained in the semiconductor layer is small, for example, even in the case where carbon atom density is 0.1 to 9.8 atom% by forming at least one of the first conductive layer and the second conductive layer using the microcrystal silicon containing the carbon atom. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种获得高光电转换效率的光电转换器，而不将高浓度的碳添加到p型层或n型层。解决方案：光电转换器包括依次层叠半导体的第一导电层，微晶半导体的i型层和半导体的第二导电层而构成的光电转换层。第一导电层和第二导电层中的至少一个是含有碳原子的微晶硅的含碳层。在半导体层中所含的碳的体积小的情况下，即使在碳原子密度为0.1〜9.8原子％的情况下，通过形成第一导电层和第二导电层的至少一方，也可以获得高的光电转换效率使用含有碳原子的微晶硅的第二导电层。版权所有（C）2005，JPO＆NCIPI

5. 发明专利

JP2009060149A Stacked photoelectric conversion device 有权
标题翻译：堆叠式光电转换装置
公开(公告)号：JP2009060149A
公开(公告)日：2009-03-19
申请号：JP2008321032
申请日：2008-12-17
申请人： Sharp Corp , シャープ株式会社
发明人： NASUNO YOSHIYUKI , KOHAMA NORIYOSHI , NISHIMURA KAZUHITO , HAYAKAWA HISASHI
IPC分类号： H01L31/04
CPC分类号： H01L31/0236 , H01L31/022466 , H01L31/022483 , H01L31/02363 , H01L31/02366 , H01L31/076 , H01L31/1884 , Y02E10/548
摘要： PROBLEM TO BE SOLVED: To provide a stacked photoelectric conversion device in which light reflection for wavelength which can be utilized in a bottom cell in an intermediate layer is suppressed, and incident light quantity on the bottom cell can be increased. SOLUTION: The stacked photoelectric conversion device includes a plurality of photoelectric conversion layers with these layers stacked, and an intermediate layer is sandwiched between at least a pair of adjacent photoelectric conversion layers. The intermediate layer is a transparent conductive layer having at least an opening portion, and the pair of the photoelectric conversion layers holding the intermediate layer between them are brought into contact with each other through the opening part. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：解决的问题：提供一种层叠的光电转换装置，其中能够抑制可用于中间层的底部单元的波长的光反射，并且能够增加底部单元上的入射光量。解决方案：堆叠式光电转换装置包括多层这样层叠的光电转换层，中间层夹在至少一对相邻的光电转换层之间。中间层是具有至少一个开口部分的透明导电层，并且保持它们之间的中间层的一对光电转换层通过开口部彼此接触。版权所有（C）2009，JPO＆INPIT

6. 发明专利

JP2006104030A Method of purifying silicon 审中-公开
标题翻译：纯化硅的方法
公开(公告)号：JP2006104030A
公开(公告)日：2006-04-20
申请号：JP2004294890
申请日：2004-10-07
申请人： Sharp Corp , シャープ株式会社
发明人： WADA KENJI , HAYAKAWA HISASHI , FUKUYAMA TOSHIAKI , FUJIWARA HIROYASU , OTSUKA YOSHITATSU
IPC分类号： C01B33/037
摘要： PROBLEM TO BE SOLVED: To provide a method of efficiently purifying silicon by improving the removal rate of boron from silicon.
SOLUTION: In the method of purifying silicon, molten silicon (8) containing impurities is held in a crucible (2) and a treating gas is blown into the molten silicon (8). The flow rate of a reducing gas contained in the treating gas is set to ≥0.05 L/hr and ≤1 L/hr per 1 g silicon.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供通过提高硅从硅中的去除率来有效地净化硅的方法。解决方案：在硅的纯化方法中，将含有杂质的熔融硅（8）保持在坩埚（2）中，并将处理气体吹入熔融硅（8）中。包含在处理气体中的还原气体的流量设定为≥0.05L/ hr，并且每1g硅为≤1L/ hr。版权所有（C）2006，JPO＆NCIPI

7. 发明专利

JP2013221364A Solar cell module, production method for solar cell module, support structure for solar cell module, and solar power generation system 审中-公开
标题翻译：太阳能电池模块，太阳能电池模块的生产方法，太阳能电池模块的支撑结构和太阳能发电系统
公开(公告)号：JP2013221364A
公开(公告)日：2013-10-28
申请号：JP2012095079
申请日：2012-04-18
申请人： Sharp Corp , シャープ株式会社
发明人： MIZUO KAZUHIRO , HAYAKAWA HISASHI
IPC分类号： E04D13/18 , E04H5/00 , H01L31/042
CPC分类号： Y02B10/12 , Y02E10/50
摘要： PROBLEM TO BE SOLVED: To enable the quality of adhesion state to be confirmed by visual observation even when the used amount of an adhesive member is reduced.SOLUTION: A solar cell module comprises a solar cell module main body (11), and a support rail (12) adhered and fixed to the rear surface of the solar cell module main body (11) by an adhesive (30). In an adhesive surface (12a1) of the support rail (12) for the adhesive (30), a confirmation hole (13), which penetrates from the adhesive surface (12a1) to a surface opposite thereto, is provided.
摘要翻译：要解决的问题：即使当粘合剂的使用量减少时，也可以通过目视观察来确认粘附状态的质量。解决方案：太阳能电池模块包括太阳能电池模块主体（11）和支撑体轨道（12）通过粘合剂（30）粘附并固定到太阳能电池模块主体（11）的后表面。在用于粘合剂（30）的支撑轨道（12）的粘合表面（12a1）中，设置有从粘合表面（12a1）穿透到与其相对的表面的确认孔（13）。

8. 发明专利

JP2006173412A See-through photoelectric converter and building material using the same 有权
标题翻译：看到光电转换器和使用它的建筑材料
公开(公告)号：JP2006173412A
公开(公告)日：2006-06-29
申请号：JP2004365087
申请日：2004-12-16
申请人： Sharp Corp , シャープ株式会社
发明人： NISHIMURA KAZUHITO , HAYAKAWA HISASHI
IPC分类号： H01L31/04 , E04F13/08 , H05K9/00
CPC分类号： H01L31/0468 , H01L31/048 , Y02E10/50
摘要： PROBLEM TO BE SOLVED: To provide a see-through photoelectric converter having high electromagnetic wave shieldability without deteriorating power generating efficiency. SOLUTION: A photoelectric conversion layer 4 is held between a front transparent conductive layer 3 and a back electrode layer 5, an opening 9 through which the rays of light are made to pass is formed in the photoelectric conversion layer 4, and a back transparent conductive layer 7 is arranged corresponding to the location where at least the opening 9 is covered. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种具有高电磁波屏蔽能力的透明光电转换器，而不会降低发电效率。解决方案：光电转换层4保持在前透明导电层3和背电极层5之间，在光电转换层4中形成通过光线通过的开口9，并且对应于至少开口9被覆盖的位置布置背面透明导电层7。版权所有（C）2006，JPO＆NCIPI

9. 发明专利

JP2004217473A Apparatus and method for purifying silicon and silicon purified using the same 有权
公开(公告)号：JP2004217473A
公开(公告)日：2004-08-05
申请号：JP2003007326
申请日：2003-01-15
申请人： Sharp Corp , シャープ株式会社
发明人： FUKUYAMA TOSHIAKI , WADA KENJI , HAYAKAWA HISASHI
IPC分类号： C01B33/037
摘要： PROBLEM TO BE SOLVED: To provide an apparatus for purifying silicon which is suitable for the high efficient removal of impurity elements, particularly boron in raw material silicon and in which the formation and the growth of an oxidized coating film of SiO
2 are suppressed, the clogging of a purification gas blowing hole is prevented and a stable long term operation is performed.
SOLUTION: The apparatus for purifying silicon is provided with a melting furnace 10 where the raw material silicon containing impurities is kept in a melting state and a purification gas blowing and stirring means S
1 for purifying silicon by stirring molten silicon M while blowing a purification gas containing an oxidizing gas into the molten silicon M in the melting furnace 10. The purification gas blowing and stirring means S
1 is provided with a hollow bar body 5 having a purification gas introducing passage 4 inside, a stirring body 6 provided at the tip of the bar body 5 and having the gas blowing hole 7 communicating with the purification gas introducing passage 4 and formed on the outer surface and a bar body driving part for moving the stirring body 6 in the molten silicon M by driving the bar body 5. The stirring body 6 has a corner part on the outer surface and the gas blowing hole 7 is opened at the corner part or the vicinity of the corner part of the stirring body 6.
COPYRIGHT: (C)2004,JPO&NCIPI

10. 发明专利

JP2003277040A Method of purifying silicon and solar cell manufactured by using silicon purified by method thereof 审中-公开
标题翻译：通过使用通过其方法纯化的硅制造的硅和太阳能电池的纯化方法
公开(公告)号：JP2003277040A
公开(公告)日：2003-10-02
申请号：JP2002076220
申请日：2002-03-19
申请人： Sharp Corp , シャープ株式会社
发明人： FUKUYAMA TOSHIAKI , WADA KENJI , HAYAKAWA HISASHI , NUNOI TORU
IPC分类号： C01B33/037 , H01L31/04
CPC分类号： Y02E10/546
摘要： PROBLEM TO BE SOLVED: To efficiently and up to inexpensively provide silicon for solar cell by purifying crude metal silicon about 7-nine purity. SOLUTION: The method of purifying silicon is performed by removing impurities such as boron from molten silicon and includes a process for purifying the molten silicon with molten slag and a process for purifying silicon with a gas containing an oxidizing gas. At least one selected from a group composed of the gas containing the oxidizing gas, the molten slag and the molten silicon is preferably stirred. COPYRIGHT: (C)2004,JPO

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