专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JP2008266119A Silicone resin, silicone resin composition and method for forming trench isolation 审中-公开
标题翻译：硅树脂，硅树脂组合物和形成分离分离的方法
公开(公告)号：JP2008266119A
公开(公告)日：2008-11-06
申请号：JP2007253276
申请日：2007-09-28
申请人： Jsr Corp , Jsr株式会社
发明人： IWAZAWA HARUO , MATSUKI YASUO , TAMAKI KENTARO
IPC分类号： C01B33/12 , B05D7/24 , C08G77/12 , H01L21/316 , H01L21/76
摘要： PROBLEM TO BE SOLVED: To provide a silicon dioxide precursor and a silicon dioxide precursor composition useful for forming a high purity silicon dioxide film containing no organic component. SOLUTION: The silicon dioxide precursor is a silicone resin that is represented by the rational formula (1) (H 2 SiO) n (HSiO 1.5 ) m (SiO 2 ) k , wherein each n, m and k represents a number, and when n+m+k=1, n is not less than 0.05, m is over 0 to 0.95 and k is from 0 to 0.2, and that is solid at 120°C. The silicon dioxide precursor composition contains the above silicone resin and an organic solvent. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：解决的问题：提供二氧化硅前体和用于形成不含有机成分的高纯度二氧化硅膜的二氧化硅前体组合物。解决方案：二氧化硅前体是由合理的式（1）表示的有机硅树脂（H 2 SiO）（HSiO 1.5 < / SB>）其中每个n，m和k表示一个数，当n + m + k = 1，n不小于0.05，m大于0至0.95，k为0至0.2，在120℃为固体。二氧化硅前体组合物含有上述有机硅树脂和有机溶剂。版权所有（C）2009，JPO＆INPIT

2. 发明专利

JP2007284639A Method for producing higher order silane compound containing phosphorus atom and method for forming phosphorus-containing silicon film by using the same 审中-公开
标题翻译：生产含有磷酸钙的高级硅烷化合物的方法和使用该方法形成含磷硅膜的方法
公开(公告)号：JP2007284639A
公开(公告)日：2007-11-01
申请号：JP2006116614
申请日：2006-04-20
申请人： Jsr Corp , Jsr株式会社
发明人： IWAZAWA HARUO , O DOUKAI , MATSUKI YASUO
IPC分类号： C08G77/60 , C08J5/18
摘要： PROBLEM TO BE SOLVED: To provide a method for forming a uniform phosphorus-doped conductive silicon film on a substrate under normal pressure by a coating method and provide a method for producing a higher order silane compound containing phosphorus atom for the film-forming method.
SOLUTION: The method for forming a higher order silane compound containing phosphorus atom comprises the irradiation of a solution containing a photopolymerizable silane compound and a phosphorus compound with light having wavelength of >400 nm. The method for forming a phosphorus-containing silicon film comprises the coating of a substrate with a solution containing the higher order silane compound containing phosphorus atom obtained by the above method and the heat-treatment of the coated substrate.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种在常压下通过涂布法在基板上形成均匀的磷掺杂导电硅膜的方法，并提供一种含有磷原子的高级硅烷化合物的方法，成型方法。解决方案：形成含有磷原子的高级硅烷化合物的方法包括用波长> 400nm的光照射含有光聚合性硅烷化合物和磷化合物的溶液。形成含磷硅膜的方法包括用包含通过上述方法获得的含有磷原子的高级硅烷化合物的溶液和涂覆的基材的热处理来涂覆基材。版权所有（C）2008，JPO＆INPIT

3. 发明专利

JP2006133803A Radiation-sensitive resin composition 有权
标题翻译：辐射敏感性树脂组合物
公开(公告)号：JP2006133803A
公开(公告)日：2006-05-25
申请号：JP2006005710
申请日：2006-01-13
申请人： Jsr Corp , Jsr株式会社
发明人： IWAZAWA HARUO , HAYASHI AKIHIRO , SHIMOKAWA TSUTOMU
IPC分类号： G03F7/039 , C08K5/42 , C08L83/04 , G03F7/004 , G03F7/075 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a radiation-sensitive resin composition, containing a dissociable group-containing polysiloxane as a resin component and suitable for use as a chemically amplified resist, particularly superior in resolution. SOLUTION: The radiation-sensitive resin composition contains (A) the dissociable group-containing polysiloxane and (B) a radiation-sensitive acid generator, containing as essential components, a compound (B1) capable of generating an acid represented by Formula (I) and a compound (B2) capable of generating other sulfonic acid or a carboxylic acid. In the Formula (I), four symbols Rf each independently denote F or a trifluoromethyl group; Ra denotes a 3-20C cyclic monovalent hydrocarbon group or a 3-20C cyclic monovalent fluorinated hydrocarbon group, and the cyclic monovalent hydrocarbon group and the cyclic monovalent fluorinated hydrocarbon group may be substituted. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种含有可离解基团的聚硅氧烷作为树脂组分并且适合用作化学放大抗蚀剂的辐射敏感性树脂组合物，其分辨率特别优异。解决方案：辐射敏感性树脂组合物含有（A）含离解基团的聚硅氧烷和（B）作为必需成分的辐射敏感性酸产生剂，能够产生由式（I）和能够产生其它磺酸或羧酸的化合物（B2）。在式（I）中，四个符号R f各自独立地表示F或三氟甲基; Ra表示3-20C环状一价烃基或3-20C环状一价氟化烃基，环状一价烃基和环状一价氟代烃基可以被取代。版权所有（C）2006，JPO＆NCIPI

4. 发明专利

JP2004204094A Composition for forming silicon film and method for forming silicon film 审中-公开
公开(公告)号：JP2004204094A
公开(公告)日：2004-07-22
申请号：JP2002376019
申请日：2002-12-26
申请人： Jsr Corp , Jsr株式会社
发明人： IWAZAWA HARUO , KATO HITOSHI
IPC分类号： C01B33/02 , C09D1/00 , C09D201/00 , H01L21/208 , H01L31/04
CPC分类号： Y02E10/50
摘要： PROBLEM TO BE SOLVED: To provide a composition and a method for efficiently and simply forming a polycrystalline silicon film having a desired film thickness. SOLUTION: The composition for forming a silicon film comprises silicon particles produced by a thermal plasma method and a dispersion medium. The method for forming the silicon film comprises forming a coating film of the composition for forming the silicon film on a substrate and then subjecting the coating film to instantaneous melting or to heat treatment or optical treatment to form the silicon film. COPYRIGHT: (C)2004,JPO&NCIPI

5. 发明专利

JP2003313299A Higher order silane composition and process for forming silicon film using the same 审中-公开
标题翻译：更高级的硅烷组合物及其形成硅胶膜的方法
公开(公告)号：JP2003313299A
公开(公告)日：2003-11-06
申请号：JP2002119961
申请日：2002-04-22
申请人： Jsr Corp , Jsr株式会社 , Seiko Epson Corp , セイコーエプソン株式会社
发明人： AOKI TAKASHI , FURUSAWA MASAHIRO , MATSUKI YASUO , IWAZAWA HARUO , TAKEUCHI YASUMASA
IPC分类号： C01B33/029 , C01B33/04 , C08G77/60 , C09D183/16 , H01L21/208 , H01L21/368
CPC分类号： C08G77/60 , C01B33/04 , C09D183/16 , H01L21/02422 , H01L21/02532 , H01L21/02628
摘要： PROBLEM TO BE SOLVED: To obtain a higher order silane composition which contains a higher order silane compound having a larger molecular weight from the viewpoint of wettability, boiling point and safety upon its application onto a substrate, and especially can easily form a high-quality silicon film, and a process for forming the excellent silicon film using the composition.
SOLUTION: The higher order silane composition contains the higher order silane compound obtained by photopolymerizing a solution of a photopolymerizable silane compound or a photopolymerizable silane compound in a liquid state by exposing it to ultraviolet irradiation. In the process for forming the silicon film, the higher order silane composition is applied onto a substrate.
COPYRIGHT: (C)2004,JPO
摘要翻译：待解决的问题：为了获得含有较高分子量的高级硅烷化合物的高级硅烷组合物，从润湿性，沸点和施加到基材上的安全性的观点来看，特别是可以容易地形成高质量的硅膜，以及使用该组合物形成优异的硅膜的工艺。解决方案：高级硅烷组合物含有通过将其暴露于紫外线照射而使液态的光聚合性硅烷化合物或可光聚合的硅烷化合物的溶液光聚合而获得的高级硅烷化合物。在形成硅膜的过程中，将较高级的硅烷组合物施加到基底上。版权所有（C）2004，JPO

6. 发明专利

JP2002278073A RADIATION SENSITIVE RESIN COMPOSITION 失效
公开(公告)号：JP2002278073A
公开(公告)日：2002-09-27
申请号：JP2001077042
申请日：2001-03-16
申请人： JSR CORP
发明人： IWAZAWA HARUO , NISHIYAMA SATORU , HAYASHI AKIHIRO , SHIMOKAWA TSUTOMU
IPC分类号： G03F7/075 , C08K5/00 , C08L83/06 , G03F7/039 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a radiation sensitive resin composition containing a specified polysiloxane, having high transparency to radiation of and X are each a monovalent organic group which is dissociated by an acid and generates H or H (but the case of X =H is excluded); R" is H, methyl or trifluoromethyl; and (m) and (n) are each an integer of 0-3.

7. 发明专利

JP2006310345A Method of forming laminated film 审中-公开
标题翻译：形成层压膜的方法
公开(公告)号：JP2006310345A
公开(公告)日：2006-11-09
申请号：JP2005127473
申请日：2005-04-26
申请人： Jsr Corp , Jsr株式会社
发明人： IWAZAWA HARUO , O DOUKAI , MATSUKI YASUO
IPC分类号： H01L21/208 , H01L21/316 , H01L21/336 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To provide a simple method for forming a laminated film made of a silicon film and a silicon oxide film on a substrate.
SOLUTION: By the method of forming the laminated film, the laminated film made of a silicon film and a silicon oxide film is formed on the substrate from a composition for film formation containing a silane compound and a solvent.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种在基板上形成由硅膜和氧化硅膜构成的层叠膜的简单方法。解决方案：通过形成层压膜的方法，由含硅烷化合物和溶剂的成膜用组合物在基板上形成由硅膜和氧化硅膜构成的层叠膜。版权所有（C）2007，JPO＆INPIT

8. 发明专利

JP2005332913A Method for forming silicon film for solar battery, and solar battery 审中-公开
标题翻译：用于形成太阳能电池的硅膜的方法和太阳能电池
公开(公告)号：JP2005332913A
公开(公告)日：2005-12-02
申请号：JP2004148769
申请日：2004-05-19
申请人： Jsr Corp , Jsr株式会社 , Kokusai Kiban Zairyo Kenkyusho:Kk , Sharp Corp , シャープ株式会社 , 株式会社国際基盤材料研究所
发明人： IWAZAWA HARUO , O DOUKAI , YAMAMOTO HIROSHI , HAYAKAWA HISASHI , ENDO MASAYUKI , TAKEUCHI YASUMASA
IPC分类号： H01L31/04
CPC分类号： Y02E10/546
摘要： PROBLEM TO BE SOLVED: To provide a method for easily forming a silicon film having performance appropriate as a semiconductor layer used for a solar battery, and a solar battery using the silicon film. SOLUTION: A method for forming a silicon film for a solar battery includes the steps of coating a substrate with a composition containing silicon particles and high-order silane compound; and heating resultant coating under pressure lower than that of the coating process, and a solar battery including at least one layer of silicon films formed by the method inside a cell. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种容易地形成具有适合作为用于太阳能电池的半导体层的性能的硅膜的方法和使用该硅膜的太阳能电池。解决方案：一种用于形成太阳能电池用硅膜的方法包括以下步骤：用含有硅颗粒和高级硅烷化合物的组合物涂覆基材; 并且在比所述涂覆工艺低的压力下加热得到的涂层，以及包括通过所述方法在所述电池内形成的至少一层硅膜的太阳能电池。版权所有（C）2006，JPO＆NCIPI

9. 发明专利

JP2004123793A Silicon-containing compound, polysiloxane, and radiation-sensitive resin composition 审中-公开
公开(公告)号：JP2004123793A
公开(公告)日：2004-04-22
申请号：JP2002285855
申请日：2002-09-30
申请人： Jsr Corp , Jsr株式会社
发明人： CHIBA TAKASHI , IWAZAWA HARUO , HAYASHI AKIHIRO , SHIMOKAWA TSUTOMU
IPC分类号： G03F7/039 , C07F7/18 , C08G77/50 , G03F7/075 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a new polysiloxane which exhibits a high transparency at a wavelength of 193 nm or less and is excellent in dry etching resistance, especially in environmental resistance; a new silicon-containing compound useful e.g. as a raw material for synthesizing the polysiloxane; and a radiation-sensitive resin composition containing the polysiloxane. SOLUTION: The silicon-containing compound is represented by formula (1) (wherein X 1 is an optionally substituted 2-20C divalent hydrocarbon group; R 1 and R 2 are each H, a halogen, an alkoxy group or an optionally halogenated hydrocarbon group, provided each of two or three R 1 's are a halogen or an alkoxy group; and m and n are each 0, 1, 2 or 3, provided (m+n) COPYRIGHT: (C)2004,JPO

10. 发明专利

JP2003342319A Method of removing metal contained in alicyclic hydrocarbon polymer, and radiation-sensitive composition 审中-公开
标题翻译：在ALICYCLIC HYDROCARBON聚合物中除去金属的方法和辐射敏感性组合物
公开(公告)号：JP2003342319A
公开(公告)日：2003-12-03
申请号：JP2002153421
申请日：2002-05-28
申请人： Jsr Corp , Jsr株式会社
发明人： SUWA YOSHI , NAKASE YOSHIHISA , IWAZAWA HARUO , SANO KIMIYASU
IPC分类号： G03F7/039 , C08F6/08 , C08F32/04 , C08G67/02 , G03F7/26 , G03F7/38 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a purification process by which a metal contained in alicyclic hydrocarbon polymers as an impurity is removed and to provide a radiation-sensitive resin composition of a high performance photoresist which is composed of the purified polymer.
SOLUTION: 1. The method of removing a metal contained in the alicyclic hydrocarbon polymer comprises the following processes: a process of coagulating the alicyclic hydrocarbon polymer by mixing an acid-added organic solvent solution of the polymer with its poor solvent, and a process of dissolving the coagulated polymer into a water-insoluble organic solvent, followed by bringing the solution into contact with an acidic hot water solution, extracting the metal contained therein. 2. The radiation-sensitive composition contains the alicyclic hydrocarbon polymer purified by the above-mentioned processes to remove the contained metal, and a radiation-sensitive acid generator.
COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：提供除去作为杂质的脂环烃聚合物中所含的金属的纯化方法，并提供由纯化的聚合物构成的高性能光致抗蚀剂的辐射敏感性树脂组合物。解决方案：1.除去脂环烃聚合物中所含的金属的方法包括以下方法：通过将聚合物的加酸有机溶剂溶液与其不良溶剂混合而使脂环族烃聚合物凝结的方法，以及将凝固的聚合物溶解在水不溶性有机溶剂中，然后使溶液与酸性热水溶液接触，萃取其中所含的金属的方法。辐射敏感性组合物含有通过上述方法纯化的脂环烃聚合物以除去所含的金属和辐射敏感的酸产生剂。版权所有（C）2004，JPO

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式