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1. 发明专利

JP2003043704A Method for manufacturing semiconductor device 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：JP2003043704A
公开(公告)日：2003-02-14
申请号：JP2001234359
申请日：2001-08-02
申请人： Hitachi Ltd , Hitachi Ulsi Systems Co Ltd , 株式会社日立製作所 , 株式会社日立超エル・エス・アイ・システムズ
发明人： TANAKA TOSHIHIKO , HATTORI KOJI , YOKOYAMA YOSHIYUKI , KIMURA KAORI
IPC分类号： G03F7/038 , G03F7/20 , G03F7/38 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device by which chips having microcircuit patterns are manufactured with a high acquisition rate of chips.
SOLUTION: After a negative resist film is formed on a wafer, the resist in the peripheral part of the wafer is coated with a substance which inhibits photosensitivity of the resist or its photosensitive reaction.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：提供一种制造半导体器件的方法，通过该半导体器件制造具有高芯片采集速率的具有微电路图案的芯片。解决方案：在晶片上形成负的抗蚀剂膜之后，晶片的周边部分中的抗蚀剂涂覆有抑制抗蚀剂的光敏性或其光敏反应的物质。

2. 发明专利

JP2003005370A Pattern forming method and method for producing semiconductor device 审中-公开
标题翻译：图案形成方法和制造半导体器件的方法
公开(公告)号：JP2003005370A
公开(公告)日：2003-01-08
申请号：JP2001186416
申请日：2001-06-20
申请人： Hitachi Ltd , Hitachi Ulsi Systems Co Ltd , 株式会社日立製作所 , 株式会社日立超エル・エス・アイ・システムズ
发明人： YOKOYAMA YOSHIYUKI , HATTORI KOJI , SHIRAISHI HIROSHI , TANAKA TOSHIHIKO , KIMURA KAORI
IPC分类号： G03F7/038 , G03F7/32 , G03F7/38 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a method capable of forming a high resolution negative type pattern. SOLUTION: In the pattern forming method using a radiation sensitive composition containing a copolymer having a hydroxycarboxylic acid structure moiety and a compound which generates an acid when irradiated with radiation, when the mole fraction of the hydroxycarboxylic acid structure moiety at the time when the velocity of dissolution of the copolymer in an aqueous alkali solution having a concentration of b% becomes 10 nm/sec is represented by a%, the mole fraction of the hydroxycarboxylic acid structure of the copolymer in the radiation sensitive composition is adjusted to the range from (a+5)% to (a+20)%.
摘要翻译：要解决的问题：提供能够形成高分辨率负型图案的方法。解决方案：在使用含有具有羟基羧酸结构部分的共聚物的辐射敏感性组合物和当辐射照射时产生酸的化合物的图案形成方法中，当羟基羧酸结构部分的摩尔分数在共聚物在浓度为b％的碱性水溶液中的溶解度为10nm /秒，以％表示，将辐射敏感性组合物中共聚物的羟基羧酸结构的摩尔分数调节至（a +5）％至（a + 20）％。

3. 发明专利

JP2008047904A Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：JP2008047904A
公开(公告)日：2008-02-28
申请号：JP2007208713
申请日：2007-08-10
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： SEKIGUCHI TOMONORI , TANAKA TOSHIHIKO , YAMANAKA TOSHIAKI , SAKATA TAKESHI , KIMURA KATSUTAKA
IPC分类号： H01L21/8242 , G03F1/00 , G03F1/68 , G03F7/20 , G11C11/401 , H01L21/027 , H01L21/82 , H01L21/8244 , H01L21/8246 , H01L21/8247 , H01L27/10 , H01L27/108 , H01L27/11 , H01L27/112 , H01L27/115
摘要： PROBLEM TO BE SOLVED: To provide a method for forming a pattern that can solve problems of short-circuit or breaking of word lines and data line ends caused by interference of diffracted light produced at a pattern end on a boundary part between a memory array and a sub-word driver or sense amplifier when fine word lines and data lines having linewidth smaller than a wavelength are patterned on a memory. SOLUTION: In a mask pattern (a) for patterning word lines and data lines, lengths of word lines WL1, WL2, WL5 and WL6 having end parts neighboring each other are varied to shift their ends from each other, and further the ends of word lines WL1, WL2, WL5 and WL6 are slanted. Separation within a resist pattern and contact of patterns with each other can be thereby prevented, and also breakage of wires to be patterned and short-circuiting between wires can be prevented. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种形成图案的方法，该图案可以解决由在图案端处产生的衍射光的干涉引起的字线和数据线端的短路或断裂的问题，存储器阵列和子字驱动器或读出放大器，当具有小于波长的线宽的细字线和数据线被图案化时。解决方案：在用于构图字线和数据线的掩模图案（a）中，改变具有彼此相邻的端部的字线WL1，WL2，WL5和WL6的长度，以使其端部彼此偏移，字线WL1，WL2，WL5和WL6的端部是倾斜的。因此可以防止抗蚀剂图案之间的分离和图案彼此的接触，并且可以防止图案化的电线断裂和电线之间的短路。版权所有（C）2008，JPO＆INPIT

4. 发明专利

JP2004020760A Photomask and its manufacturing method 审中-公开
公开(公告)号：JP2004020760A
公开(公告)日：2004-01-22
申请号：JP2002173628
申请日：2002-06-14
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： TANAKA TOSHIHIKO , HATTORI KOJI
IPC分类号： G03F1/32 , G03F1/36 , G03F1/42 , G03F1/56 , G03F1/68 , H01L21/027 , G03F1/08
摘要： PROBLEM TO BE SOLVED: To speed up manufacture turn around time of a halftone phase shift mask and to reduce the cost.
SOLUTION: In the halftone phase shift mask, an auxiliary pattern for light shielding is formed of a photosensitive organic film such as a resist.
COPYRIGHT: (C)2004,JPO

5. 发明专利

JP2003282391A Manufacturing method of multi-chip module and integrated semiconductor circuit device 有权
标题翻译：多芯片模块和集成半导体电路设备的制造方法
公开(公告)号：JP2003282391A
公开(公告)日：2003-10-03
申请号：JP2001381685
申请日：2001-12-14
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： TERASAWA TSUNEO , TANAKA TOSHIHIKO , MIYAZAKI HIROSHI , HASEGAWA NORIO , MORI KAZUTAKA
IPC分类号： G03F1/46 , G03F1/54 , G03F1/56 , G03F7/20 , G03F7/22 , H01L21/027 , H01L21/8246 , H01L27/112 , G03F1/08 , G03F1/14
摘要： PROBLEM TO BE SOLVED: To improve the productivity of integrated semiconductor circuit devices. SOLUTION: Exposures are carried out by using a photomask having a metal light shade pattern or a photomask having a resist film light shade pattern, depending on the number of exposures with the photomasks. A multi-chip module MCM is manufactured, by mounting on a single base substrate 30M memory chips 2CM manufactured by using a photomask having a metal light shade pattern and logic chips 2CL manufactured by using a photomask having a resist film light shade pattern. COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：提高集成半导体电路器件的生产率。解决方案：曝光通过使用具有金属遮光图案的光掩模或具有抗蚀剂膜光阴图案的光掩模进行，这取决于光掩模的曝光次数。通过安装在通过使用具有金属光阴图案的光掩模和通过使用具有抗蚀剂膜光阴影图案的光掩模制造的逻辑芯片2CL制造的单个基板30M存储芯片2CM上来制造多芯片模块MCM。版权所有（C）2004，JPO

6. 发明专利

JP2003005353A Radiation sensitive composition and pattern forming method using the same 审中-公开
标题翻译：辐射敏感性组合物和使用其的图案形成方法
公开(公告)号：JP2003005353A
公开(公告)日：2003-01-08
申请号：JP2001184319
申请日：2001-06-19
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： UCHINO MASAICHI , YAMAMOTO JIRO , TANAKA TOSHIHIKO , YASUKAWA AKIKO , HAYASHI NOBUAKI
IPC分类号： G03F7/004 , G03F7/20
摘要： PROBLEM TO BE SOLVED: To provide a pattern forming technique capable of efficiently forming a high resolution pattern for use in microfabrication using a radiation sensitive composition as a photoresist which can be developed with an aqueous alkali solution, has high sensitivity characteristics and is reversed from negative type to positive type in accordance with dose.
SOLUTION: A pattern is formed through a step in which a radiation sensitive composition containing an aromatic compound having a negative forming functional group which makes an alkali-soluble group disappear by an acid catalyzed reaction and a positive forming functional group which makes an alkali-soluble group appear in the same molecule, an acid precursor and an alkali-soluble polymer is prepared and applied to form a radiation sensitive composition film, a step for irradiating the radiation sensitive composition film with radiation of a desired pattern shape, a step for heating the irradiated radiation sensitive composition film and a step for developing the heated radiation sensitive composition film with an aqueous alkali solution to allow a pattern to appear.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：为了提供能够有效地形成用于使用辐射敏感组合物的微细加工的高分辨率图案的图案形成技术作为可以用碱性水溶液显影的光致抗蚀剂，具有高灵敏度特性并且与负相反根据剂量类型为阳性型。解决方案：通过一个步骤形成图案，其中含有具有负性形成官能团的芳族化合物的辐射敏感性组合物，其使碱溶性基团通过酸催化反应消失，并形成阳离子形成官能团，其形成碱溶性基团出现在相同的分子中，制备酸前体和碱溶性聚合物并施加以形成辐射敏感组合物膜，用于用所需图案形状的辐射照射辐射敏感组合物膜的步骤，照射的辐射敏感组合物膜和用碱性水溶液显影加热的辐射敏感性组合物膜以允许图案出现的步骤。

7. 发明专利

JP2004101868A Method for manufacturing photomask 审中-公开
公开(公告)号：JP2004101868A
公开(公告)日：2004-04-02
申请号：JP2002263626
申请日：2002-09-10
申请人： Dainippon Printing Co Ltd , Hitachi Ltd , 大日本印刷株式会社 , 株式会社日立製作所
发明人： TANAKA TOSHIHIKO , SASAKI SHIHO , FUJII AKIKO
IPC分类号： G03F1/56 , G03F1/72 , G03F1/82 , G03F7/40 , H01L21/027 , G03F1/08
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a photomask, using as a mask material specially a resist which is low-cost and shortens a manufacturing TAT (Turn Around Time), with less scum and less mask defects.
SOLUTION: The present invention is characterized in that after a resist pattern is formed on a transparent substrate, the resist pattern is irradiated with VUV light in an environment wherein oxygen is present near the resist pattern.
COPYRIGHT: (C)2004,JPO

8. 发明专利

JP2004061665A Method for manufacturing semiconductor device 审中-公开
公开(公告)号：JP2004061665A
公开(公告)日：2004-02-26
申请号：JP2002217175
申请日：2002-07-25
申请人： Hitachi Ltd , Tokyo Ohka Kogyo Co Ltd , 東京応化工業株式会社 , 株式会社日立製作所
发明人： TANAKA TOSHIHIKO , YOKOYAMA YOSHIYUKI , HATTORI KOJI , SHIRAISHI HIROSHI , TACHIKAWA TOSHIKAZU , IWASHITA ATSUSHI , TAKASU RYOICHI
IPC分类号： G03F7/038 , C08F220/28 , G03F7/11 , G03F7/32 , G03F7/40 , H01L21/027 , H01L21/768
摘要： PROBLEM TO BE SOLVED: To solve the following problem: disconnection or increase and unevenness in wiring resistance due to resist residue remaining in distribution holes, or impossibility of formation of a fine circuit pattern due to swelling by development, in forming a copper wiring circuit by a dual damascene method in which distribution holes are formed prior to formation of distribution grooves using ArF lithography capable of forming a fine pattern.
SOLUTION: A dual damascene process in which distribution holes are formed prior to formation of distribution grooves is carried out using ArF lithography with a negative-working resist whose exposed area is made negative by lactonization reaction as a resist in formation of a distribution groove pattern. By this method, the above problem is solved.
COPYRIGHT: (C)2004,JPO

9. 发明专利

JP2003303752A Method of manufacturing semiconductor device 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：JP2003303752A
公开(公告)日：2003-10-24
申请号：JP2002105176
申请日：2002-04-08
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： TANAKA TOSHIHIKO
IPC分类号： G03F7/30 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To prevent, by a simplified method, the fall of a resist pattern generated when a fine circuit pattern is formed. SOLUTION: A resist is developed halfway at first development and a resist pattern is formed at second development via rinsing and drying processes. Here, the concentration of a first developer is set thinner than that of a second developer. This method can solve the fall of the resist pattern. COPYRIGHT: (C)2004,JPO

10. 发明专利

JP2003022767A Color cathode-ray tube 审中-公开
标题翻译：彩色阴极射线管
公开(公告)号：JP2003022767A
公开(公告)日：2003-01-24
申请号：JP2001208033
申请日：2001-07-09
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： TANAKA TOSHIHIKO
IPC分类号： H01J29/92
摘要： PROBLEM TO BE SOLVED: To obtain a sufficient grounding effect by suppressing destruction of an electric conduction film of a panel.
SOLUTION: It has a reinforcement band 4 outside a display domain of the panel 1, which has a transparent electric conduction film 2A at least on its surface, an earth tape 6 for connecting the transparent electric conduction film 2A to the reinforcement band 4 electrically at least at the part of an outer peripheral edge of the display domain, and a concavo-convex 6A formed in the front edge of the ground tape 6, which faces to the display domain. Then, the along-the-line distance of the width direction of the earth tape 6 is made longer than the width direction length of the earth tape 6 concerned.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：通过抑制面板的导电膜的破坏来获得足够的接地效果。解决方案：在面板1的显示区域外部具有加强带4，其具有至少在其表面上的透明导电膜2A，用于将透明导电膜2A电连接到加强带4的接地带6 至少在显示区域的外围边缘的一部分，以及形成在接地带6的面向显示域的前边缘中的凹凸6A。然后，使接地带6的宽度方向的线间距离比所涉及的接地带6的宽度方向长度长。

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