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1. 发明专利

JPH05166984A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH05166984A
公开(公告)日：1993-07-02
申请号：JP33168791
申请日：1991-12-16
申请人： HITACHI LTD , HITACHI TOBU SEMICONDUCTOR LTD
发明人： SUDA MINORU , IIJIMA TETSUO , HAGIWARA YOSHIMI , ISHIZAKA KATSUO , AMANO TOMOAKI
IPC分类号： H01L23/48 , H01L29/78
摘要： PURPOSE:To enable a power MOSFET to be lessened in ON-state resistance by a method wherein at least one of leads is made to extend to the electrode of the element, and the tip of the lead is directly connected to the electrode. CONSTITUTION:A pellet 2 on whose rear side adhesive agent such as solder 11 or the like is applied is mounted on a metal header before the surface electrode of the pellet 2 is connected to a lead 8. The extension tip of the source lead-out lead 8 is aligned with an electrode 10. Electrically conductive adhesive agent such as solder pellet 11 is applied onto a contact area between the lead 8 and the electrode 10. Thereafter, the pellet 2 is made to pass through a reflow oven, whereby the pellet 2 is soldered to the header and the source lead 8 is bonded to the pellet 2. By this setup, the pellet 2 can be reduced in resistance by electrode resistance whose main component is wire resistance, so that the pellet 2 low in ON-state resistance can be obtained.

2. 发明专利

JPH0512853B2 失效
公开(公告)号：JPH0512853B2
公开(公告)日：1993-02-19
申请号：JP32566889
申请日：1989-12-14
申请人： HITACHI LTD
发明人： SUDA MINORU , YAMAGUCHI MASAO , TANAKA NOBUKATSU
IPC分类号： H01L21/56 , H01L23/28

3. 发明专利

JPH04206553A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH04206553A
公开(公告)日：1992-07-28
申请号：JP32892190
申请日：1990-11-30
申请人： HITACHI LTD , HITACHI TOBU SEMICONDUCTOR LTD
发明人： KOMATSU SATORU , HAGIWARA YOSHIMI , SUDA MINORU , IMAI SHUICHI
IPC分类号： H01L23/28 , H01L23/48
摘要： PURPOSE:To prevent a reduction in a working efficiency, which is caused by a coating of a resin, and to contrive the improvement of the reliability, productivity and yield of a semiconductor device by a method wherein a tab mounted with the device is fixed by a retention member consisting of an insulating material and thereafter, the whole part other than the lead part of the tab is sealed with the resin. CONSTITUTION:A retention member 4 consisting of an insulating material is bonded and fixed on a tab 1 and thereafter, a semiconductor chip 2 is pellet- attached on the tab 1 and the member 4 is cut and separated form the tab 1. The whole part other than a lead part 1A of the tab 1 is molded with a resin 3. Thereby, after the member 4 is separated from the tab 1 and the whole part other than the lead part 1A of the tab 1 is molded, the metal part other than the lead part 1A is never exposed on the surface of a package and the full mold package of a high dielectric strength is obtained and the reliability of the chip 2 can be improved. The tab 1 is fixed by the member 4, the horizontal swinging of the tab under the molding can be prevented, the uniformity of the thickness of the resin 3 on the rear of the tab 1 is contrived and the productivity and yield of the chip can be improved.

4. 发明专利

JPH04192351A SEMICONDUCTOR DEVICE AND ITS FORMATION 失效
公开(公告)号：JPH04192351A
公开(公告)日：1992-07-10
申请号：JP31975290
申请日：1990-11-22
申请人： HITACHI LTD
发明人： HAGIWARA YOSHIMI , SUDA MINORU , IMAI SHUICHI
IPC分类号： H01L21/56 , H01L23/48
摘要： PURPOSE:To prevent a metal header from being exposed out of resin, to reduce the number of formation steps after resin sealing, and to improve heat dissipation and breakdown strength by forming an insulator beforehand at a region of a semiconductor device where the header hold pin of a metal header contacts. CONSTITUTION:A semiconductor pellet 3 is mounted on the surface of a metal header 2A coupled with the frame of an pre-cut lead, and bonding wires 4 are formed. The bonding wire 4 connects between an outer terminal of the semiconductor pellet 3 and a base lead 2B and between the above-mentioned outer terminal and an emitter lead 2E. Insulators 5 are formed on the front and rear on the other end side of this metal header 2A. Next, resin sealing is made by transfer molding. This method prevents the metal header 2A from being exposed out of resin 6 since an insulator 5 is formed beforehand at a region of the metal header 2A where a header hold pin 10 abuts. Therefore, it is possible to abolish the step of backfilling a region where the metal header 2A is exposed after the resin 6 is sealed by transfer molding.

5. 发明专利

JPS5961949A Resin sealed semiconductor device 失效
标题翻译：树脂密封半导体器件
公开(公告)号：JPS5961949A
公开(公告)日：1984-04-09
申请号：JP17088382
申请日：1982-10-01
申请人： Hitachi Ltd
发明人： IKEZAWA RIYUUICHI , YAMAGUCHI MASAO , SUDA MINORU , AKEYAMA KENJI
IPC分类号： H01L23/32 , H01L23/29 , H01L23/31
CPC分类号： H01L23/3121 , H01L23/3135 , H01L2224/45 , H01L2224/45144 , H01L2224/48 , H01L2224/48247 , H01L2224/48465 , H01L2224/8592 , H01L2924/01014 , H01L2924/01079 , H01L2924/10253 , H01L2924/181 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： PURPOSE:To obtain a semiconductor device having a high resistivity of fatigue by heat cycle and a high resistivity to external stain by forming a second hard resin on a first hard resin deposited directly on the element through a soft substance film. CONSTITUTION:A semicnductor element 2 is connected on a heat radiating Cu plate 1 having a fixing screw 7, the other electrode of element 2 is connected to an external lead 9 through a wire 8 such as Au, an Si pellet 2 is covered with a first hard resin layer 10, this resin layer is then covered with a smooth and soft silicon oil film 11 and moreover surrounded by a second hard resin. A lead 9 is partly exposed to the outside from such resin mold. In such sealing structure, when the mold is tightened by inserting scres 13 into the holes 7, a stress is applied on the external second resin 12 but not to the pellet. Moreover, since the pellet is strongly pressed by the first hard resin layer, a high heat resistance fatigue strength and reliability can be acquired.
摘要翻译：目的：通过在通过软质膜直接沉积在元件上的第一硬树脂上形成第二硬质树脂来获得具有高热疲劳强度的电阻率和对外部污染的高电阻率的半导体器件。构成：半导体元件2连接在具有固定螺钉7的散热Cu板1上，元件2的另一个电极通过诸如Au的线8连接到外部引线9，Si片2被覆盖第一硬树脂层10，然后用光滑软硅油膜11覆盖该树脂层，然后被第二硬树脂包围。引线9从这种树脂模具部分地暴露于外部。在这种密封结构中，当通过将孔13插入孔7中来紧固模具时，对外部第二树脂12施加应力，而不施加于颗粒。此外，由于颗粒被第一硬树脂层强力挤压，因此可以获得高耐热疲劳强度和可靠性。

6. 发明专利

JPS5910241A Resin-sealed semiconductor device and manufacture thereof 失效
标题翻译：树脂密封半导体器件及其制造
公开(公告)号：JPS5910241A
公开(公告)日：1984-01-19
申请号：JP11856382
申请日：1982-07-09
申请人： Hitachi Ltd
发明人： IKEZAWA RIYUUICHI , SUDA MINORU , YAMAGUCHI MASAO , AKEYAMA KENJI , ARAKI ISAO
IPC分类号： H01L23/28 , H01L23/31
CPC分类号： H01L23/3135 , H01L23/3121 , H01L2224/32245 , H01L2224/45144 , H01L2224/48 , H01L2224/48247 , H01L2224/73265 , H01L2224/8592 , H01L2924/181 , H01L2924/00 , H01L2924/00012
摘要： PURPOSE:To reduce the damage of the titled device due to an external strain and to increase the strength thereof against thermal fatigue, by using undercoat resin having little stress, and by increasing the thermal conductivity and expansion coefficient thereof to the same degree as those of sealing mold resin. CONSTITUTION:A power transistor element 2 is connected to a header substrate 1, and the electrode of the element 2 is bonded to a lead 3 through the intermediary of a gold wire 4. An epoxy resin monomer having excellent curing property is dropped down on the element 2 and polymerized by heat to be formed into a cured undercoat resin body 9. Then, sealing resin 10 is cured by molding in a metal mold. Epoxy resin or silicone resin is used as the resin for this purpose. When an external force is applied, slippage A occurs on an interface between the sealing resin 10 and the undercoat resin 9, a strain is relaxed thereby, and thus no stress is applied directly on the element 2. Since the resin coat thus prepared is hard, the effect of pressing-in B resulting therefrom makes it possible to attain a thermal fatigue strength unvaried from that obtained by direct molding.
摘要翻译：目的：通过使用几乎没有应力的底涂层树脂，通过将热传导率和膨胀系数提高到相同程度来减少由于外部应变引起的标题装置的损伤并增加其抗热疲劳的强度密封模具树脂。构成：功率晶体管元件2连接到集管基板1，元件2的电极通过金线4与引线3接合。具有优异的固化性能的环氧树脂单体在元件2，并通过加热聚合成固化的底涂层树脂体9.然后，通过在金属模具中成型固化密封树脂10。为了此目的，使用环氧树脂或硅树脂作为树脂。当施加外力时，在密封树脂10和底涂层树脂9之间的界面上产生滑动A，因此松弛应变，因此没有应力直接施加在元件2上。由于如此制备的树脂涂层是硬的，由此产生的压入B的效果使得可以获得与通过直接成型获得的热疲劳强度不同的热疲劳强度。

7. 发明专利

JPH07147387A POWER TRANSISTOR DEVICE 失效
公开(公告)号：JPH07147387A
公开(公告)日：1995-06-06
申请号：JP31898793
申请日：1993-11-24
申请人： HITACHI LTD
发明人： IIJIMA TETSUO , SUDA MINORU
IPC分类号： H01L29/73 , H01L21/331 , H01L21/8222 , H01L23/522 , H01L23/556 , H01L23/60 , H01L23/62 , H01L27/06 , H01L29/732
摘要： PURPOSE:To maintain Zener voltage to be constant regardless of a wide range of temperature change by providing a plurality of pn junctions so that they run around a chip on polysilicon film to form a Zener diode. CONSTITUTION:The title device is formed in a ring shape around a chip in pn junction structure where a Zener diode Z is formed at polysilicon film 20 on a base region 11a of a power transistor T1, on a base region 11b of a driver transistor T2 and on a oxide film 13 formed on a substrate 10. That is, it looks like an annual ring so that the pn junction part goes around the chip periphery, thus maintaining Zener voltage to be constant regardless of a wide range of temperature change.

8. 发明专利

JPH02290032A MANUFACTURE OF RESIN MOLD TYPE SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH02290032A
公开(公告)日：1990-11-29
申请号：JP32566889
申请日：1989-12-14
申请人： HITACHI LTD
发明人： SUDA MINORU , YAMAGUCHI MASAO , TANAKA NOBUKATSU
IPC分类号： H01L21/56 , H01L23/28
摘要： PURPOSE:To obtain a mold type device of high mounting reliability by arranging, on a top force, an orifice plate which faces the header main surface side and does not come into contact with the header main surface, and injecting resin toward the orifice plate. CONSTITUTION:A lead 5 of a lead frame is pinched by molds 23, 24. A height defining segment 19 stretching from a header 1 is retained outstanding pieces 28, 29 protruding from the molds 23, 24, and the interval between the bottom surface of a cavity 25 and the rear of the header 1 is kept at a specified value. In the cavity 25 between a pair of arms 18 of the header, a columnar body 30 is arranged on the mold 23, and turned into a screw hole 4 after molding. In the cavity 25, an orifice plate 32 protruding from the mold 23 is provided, and a iris 31 is formed. On both sides of the cavity 25, the plate 32 is not formed but a rib 12 is formed by resin injection. When resin is injected from a gate 26 toward the orifice plate 32, the flow is directed between the lower surface of the header and the main surface of a bottom force, and a part which is not filled with resin does not generate, and an excellent package is obtained.

9. 发明专利

JPS615529A INSULATED SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS615529A
公开(公告)日：1986-01-11
申请号：JP12516384
申请日：1984-06-20
申请人： HITACHI LTD
发明人： SUDA MINORU , YAMAGUCHI MASAO , TANAKA NOBUKATSU
IPC分类号： H01L21/56 , H01L23/28
摘要： PURPOSE:To improve the reliability of mounting without damage of a thin portion by a bending stress due to clamping of a screw at mounting time by forming a groove interrupted by a thick rib at both ends at a header main surface side package to partition a chip fixing side and a screw inserting hole forming side. CONSTITUTION:A package 2 made of resin is formed with a limited groove 9 at both ends in the intermediate. The groove 9 is formed along the widthwise direction of the package, and formed at the position to partition between a chip mounting (chip securing) region and a region formed with a screw inserting hole. The both ends of the groove 9 are formed thickly in the same manner as a chip mounting region, and a rib 12 is formed as a reinforced member. A screw inserting hole 4 is formed substantially at the center of the package portion 10 with screw mounting side. Thus, even if the screw is strongly clamped at mounting time of a power transistor, the resin is not crushed by the clamping force, not separated, thereby enhancing the reliability of mounting.

10. 发明专利

JPS5910245A Resin-sealed semiconductor device and manufacture thereof 失效
标题翻译：树脂密封半导体器件及其制造
公开(公告)号：JPS5910245A
公开(公告)日：1984-01-19
申请号：JP11857782
申请日：1982-07-09
申请人： Hitachi Ltd
发明人： SUDA MINORU , AKEYAMA KENJI
IPC分类号： H01L23/29 , H01L21/56 , H01L23/31 , H01L23/32
CPC分类号： H01L23/32 , H01L2224/48091 , H01L2224/48247 , H01L2224/8592 , H01L2924/181 , H01L2924/00014 , H01L2924/00012
摘要： PURPOSE:To increase the strength of tightening by a bolt without lowering the intensity of power cycles, by forming an undercoat resin layer to be in a double-layer structure whose lower layer is formed of first resin having large adhesiveness to a supporting substrate and whose upper layer is formed of second resin having small adhesiveness to a resin mold body. CONSTITUTION:An undercoat resin, which is prepared by adding liquid or powder silicon resin of 4wt% to liquid epoxy resin, is dropped on a semiconductor pellet 2 mounted on a heat sink 1, baking is applied thereto, and thereby the resin is polymerized and set. A resin layer thus prepared has a double-layer structure wherein a lower layer is formed of epoxy resin 13 and an upper layer of silicon resin 14. When a heat or a mechanical stress is applied to a semiconductor device thus prepared, which is fixed on a wiring substrate 9 by a bolt 8, the silicon resin 14 acts as a release material even when a substrate 1 is deformed, a space 16 is thereby formed, and thus no stress is applied onto the pellet 2. On the other hand, the thermal expansion coefficient of the epoxy resin 13 is almost the same with that of a mold body 5 (epoxy resin), and thus the intensity of power cycles is not lowered. Therefore, the strength of tightening by the bolt 8 can be improved.
摘要翻译：目的：通过在不降低动力循环强度的情况下增加螺栓的紧固强度，通过将底层树脂层形成为双层结构，其下层由与支撑基材具有大粘合性的第一树脂形成，并且其双上层由对树脂成型体具有小粘合性的第二树脂形成。构成：将通过将4重量％的液体或粉末硅树脂添加到液体环氧树脂中而制备的底涂层树脂滴在安装在散热器1上的半导体芯片2上，对其进行烘烤，由此树脂聚合，组。如此制备的树脂层具有双层结构，其中下层由环氧树脂13和硅树脂14的上层形成。当将如此制备的半导体器件的热或机械应力施加到固定在通过螺栓8的布线基板9，即使当基板1变形时，硅树脂14也用作剥离材料，由此形成空间16，从而在颗粒2上不施加应力。另一方面，环氧树脂13的热膨胀系数与模具体5（环氧树脂）的热膨胀系数几乎相同，因此功率循环的强度不降低。因此，能够提高螺栓8的紧固强度。

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