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1. 发明专利

JP2000292941A MANUFACTURE OF PHOTOMASK 失效
公开(公告)号：JP2000292941A
公开(公告)日：2000-10-20
申请号：JP10371399
申请日：1999-04-12
申请人： HITACHI LTD , HITACHI CHEMICAL CO LTD
发明人： ARAI TADASHI , UCHINO MASAICHI , SAKAMIZU TOSHIO , SAITO HIDETAKA , SOGA TAKASHI , KASUYA KEI
IPC分类号： H01L21/302 , G03F7/42 , H01L21/306 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To make it possible to manufacture a high-grade photomask in a high yield without the remaining of resist in a submicron pattern part by using a specific aqueous alkaline solution as a peeling liquid. SOLUTION: The resist peeling liquid after etching is an aqueous alkaline solution of a pH of >=13.7 and is the aqueous solution containing at least >=1 kind selected from among a quaternary ammonium compound expressed by formula [(R1)3N-R2].OH (where, R1 is a 1-4C alkyl group; R2 is a 1-4C alkyl group or 1-4C hydroxyalkyl group; N is nitrogen and OH is hydroxyl group) or an inorganic alkaline compound expressed by formula A.OH (where, A is an alkaline metal and OH is hydroxyl group). The peeling liquid having a pH larger than 13.7 is preferable. If it is below 13.7, the remaining of the resist in a film form after peeling in the micropatterns after the etching is resulted.

2. 发明专利

JP2000155419A CHEMICALLY AMPLIFIED RESIST COMPOSITION AND METHOD FOR FORMING PHOTOMASK BY USING SAME 失效
公开(公告)号：JP2000155419A
公开(公告)日：2000-06-06
申请号：JP33223998
申请日：1998-11-24
申请人： HITACHI LTD , HITACHI CHEMICAL CO LTD
发明人： ARAI TADASHI , SAKAMIZU TOSHIO , SOGA TAKASHI , SHIRAISHI HIROSHI
IPC分类号： H01L21/027 , G03F7/004 , G03F7/032 , G03F7/039 , G03F7/30 , G03F7/40
摘要： PROBLEM TO BE SOLVED: To provide the resist composition developable with an aqueous alkaline solution and capable of obtaining a positive pattern good in dimensional control free from trailing on a photomask substrate. SOLUTION: The resist composition comprises (a) a compound to be allowed to generate acid by applying radiation, (b) a reactive medium to be allowed to increase solubility in an aqueous alkaline solution by catalytic reaction with acid, and (c) a resin composition prepared by adding a specified phenolic compound to a phenolic polymer specified in molecular weight distribution, and the above phenolic polymer has a dissolution velocity of 1-10 nm/sec in the developing solution and a ratio of DR (100-50) to a DR (50-0) is >=0.75 in the chemically amplified resist composition, where DR (100-50) is an average dissolution rate of the coating film of the above resin composition (c) from the start of dissolution (100% thickness) to 50% thickness, and DR (50-0) is that from the 50% thickness to 0% thickness.

3. 发明专利

JPH0869959A DRY-DEVELOPING METHOD AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH0869959A
公开(公告)日：1996-03-12
申请号：JP20496694
申请日：1994-08-30
申请人： HITACHI LTD , AGENCY IND SCIENCE TECHN
发明人： YAMAGUCHI ATSUKO , OGAWA TARO , SOGA TAKASHI , ITO MASAAKI , MATSUZAKA TAKASHI , TACHIBANA HIROAKI , MATSUMOTO MUTSUYOSHI
IPC分类号： G03F7/26 , H01L21/027
摘要： PURPOSE: To provide the method capable of avoiding the deterioration in shape when the residual resist film of a resist pattern formed by self-development is removed in the dry developing process. CONSTITUTION: A lower layer resist film 2 is formed on a silicon substrate 1 and then an upper layer resist film 12 comprising silicon containing resist material containing copolymer of acrylic monomer and silylated olefin or another copolymer of sulfon and silane is formed on this lower layer resist film 2. Next, specific part of the upper layer resist film 12 is irradiated with electrolytic radiation to reduce the film thickness of the exposed part furthermore, the residual resist film 15 in the exposed part is removed by the dryetching step using halogen or halogenate so as to obtain a specific pattern 18.

4. 发明专利

JPH05205989A LITHOGRAPHY METHOD AND MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH05205989A
公开(公告)日：1993-08-13
申请号：JP1281492
申请日：1992-01-28
申请人： HITACHI LTD , HITACHI CHEMICAL CO LTD
发明人： SHIRAISHI HIROSHI , SOGA TAKASHI , MURAI FUMIO , SAKAMIZU TOSHIO , HAYASHI NOBUAKI
IPC分类号： G03F7/038 , G03F7/039 , G03F7/26 , G03F7/38 , H01L21/027 , H01L21/3213
摘要： PURPOSE:To enable a two-dimensionally shaped etching mask pattern to be formed by a method wherein two functions, a catalyst producing function and a latent image forming function, of chemical amplification resist are separately given to two layers respectively. CONSTITUTION:An aluminum film 5 is formed on a silicon semiconductor substrate 6, and a lower resist layer 4, a catalyst producing layer 3, and a latent image forming layer 2 are successively formed. In succession, this specimen is irradiated with an electron beam as activating chemical rays through the latent image forming layer 2 to draw a prescribed wiring pattern for the formation of a catalyst producing part 7. Then, the specimen is baked to diffuse catalyst into the latent image forming layer 2 from the catalyst producing part 7 to form a latent image 8 corresponding to the pattern concerned. A developed pattern 9 can be obtained by developing the latent image forming layer 2, the catalyst producing layer 3 and the lower resist layer 4 are etched through the developed pattern 9 as a mask to obtain a resist pattern 10, and a wiring layer 5 is dry-etched using the resist pattern 10 as mask. By this setup, fine work can be carried out high in accuracy.

5. 发明专利

JPH053146A X-RAY EXPOSURE METHOD 失效
公开(公告)号：JPH053146A
公开(公告)日：1993-01-08
申请号：JP23294491
申请日：1991-09-12
申请人： HITACHI LTD
发明人： OGAWA TARO , MOCHIJI KOZO , MURAYAMA SEIICHI , OIIZUMI HIROAKI , SOGA TAKASHI , YAMAMOTO SEIJI , OCHIAI ISAO
IPC分类号： G03F1/22 , G03F7/20 , H01L21/027
摘要： PURPOSE:To improve the resolving property of a transfer pattern by an interference effect by a method a phase-shift layer consisting of a material having a proper refractive index is provided on the sidewalls of the absorber patterns of an X-ray mask on the basis of the result of an examination of the application of the concept of a phase-shift method, which is used in a light exposure method, to an X-ray exposure method for improving the resolving property in the X-ray exposure method. CONSTITUTION:An X-ray exposure method is characterized by that more than one layer of layers 14 consisting of a material having a refractive index different from that of an absorber are respectively formed on the sidewalls of absorber patterns 5 of an X-ray mask 2. The phase of X-rays 9 transmitted through the layers 14 formed on the sidewalls leads and an interference of the X-rays 9 and transmitted X-rays 6 from the normal parts of the patterns is generated. As a result, the exposure intensity distribution 10 of X-ray mask transmitted light is steepened and the improvement of the resolving property of a transfer pattern is made possible.

6. 发明专利

JPS63239815A MASK FOR X-RAY LITHOGRAPHY AND MANUFACTURE THEREOF 失效
公开(公告)号：JPS63239815A
公开(公告)日：1988-10-05
申请号：JP7145587
申请日：1987-03-27
申请人： HITACHI LTD
发明人： KUNIYOSHI SHINJI , KISHIMOTO AKIHIKO , SOGA TAKASHI , OGAWA TARO , KIMURA TAKESHI
IPC分类号： G03F1/22 , H01L21/027 , H01L21/30
摘要： PURPOSE:To adopt a single-layer resist process hardly causing the generation of defects by forming an electrode layer for plating for an absorber pattern in double layers, exposing a resist, using the patterned plating electrode layer as a mask and electroplating a resist pattern after development with an X-ray absorbing metal. CONSTITUTION:With an X-ray mask sample, a light transmitting conductive film 2 and a conductive film 3 consisting of a (u) metallic thin-film are laminated onto an X-ray transmitting layer 1. An electron-beam resist 4 is attached onto these plating electrode layers 2, 3, and desired regions are irradiated with electron beams 5. The resist 4 is developed, and the light-non-transmitting conductive film 3 is removed through ion milling, etc., using a developing resist pattern as a mask. After the conductive film 3 is etched, the electron-beam resist is removed, and a photosensitive resist 6 is attached. The rear of a resist adhesive surface is illuminated with visible rays or ultraviolet rays. These illuminating beams are transmitted through the conductive film 2, but they are not transmitted through the residual conductive film 3, thus forming a desired resist pattern. An X-ray absorbing material is electroplated onto the conductive film 3, employing the resist pattern as a plating female die. Accordingly, plating gold 8 is molded onto the conductive film 3, and the so-called X-ray absorbing pattern is formed.

7. 发明专利

JPS63122127A ETCHING DEVICE 失效
公开(公告)号：JPS63122127A
公开(公告)日：1988-05-26
申请号：JP26751986
申请日：1986-11-12
申请人： HITACHI LTD
发明人： SOGA TAKASHI , KISHIMOTO AKIHIKO , KIMURA TAKESHI , KUNIYOSHI SHINJI , OGAWA TARO
IPC分类号： H01L21/306 , H01L21/027 , H01L21/30
摘要： PURPOSE:To prevent a thin supporting film from being damaged by forming an air vent hole in a sample stand to connect the surface of a thin supporting film with the atmosphere, and providing a mechanism for closing the hole during etching and opening it after the etching is completed. CONSTITUTION:An air vent hole 7 having 2mm of diameter is formed at the center of a sample stand 5, and the bottom of the hole 7 is sealed with a threaded bolt 8 having 5mm of length. After it is etched with the etching device, the bolt 8 is removed, and air is fed to a space between the surface of a thin supporting film and the stand 5. Then, when the sample is removed, the pressure applied to the film 2 can be reduced. Thus, the damage to the film can be eliminated. As a result, the manufacture of an X-ray mask can be easily executed with high yield.

8. 发明专利

JPS62159426A MANUFACTURE OF X-RAY MASK 失效
公开(公告)号：JPS62159426A
公开(公告)日：1987-07-15
申请号：JP52386
申请日：1986-01-08
申请人： HITACHI LTD
发明人： KUNIYOSHI SHINJI , MURAI FUMIO , SOGA TAKASHI , KIMURA TAKESHI
IPC分类号： G03F1/00 , G03F1/68 , G03F1/80 , H01L21/027 , H01L21/30
摘要： PURPOSE:To obtain a fine pattern by dividing an electron beam drawing into plural times when drawing a resist with the beam on an X-ray mask, developing at every drawing time and further forming a radioactive ray absorbing material to prevent the resolution due to an electron beam proximity effect from decreasing. CONSTITUTION:Metal 2 such as Au, W to become a radioactive ray transmitting material is deposited on a mask substrate 1, and coated with an electron beam resist 3. The resist 3 is drawn by an electron beam at an interval of 1MUm or longer, and then developed. The metal 2 underneath the resist 3 is etched. After the resist 3 is removed, it is newly coated with a resist 3. A metal pattern is detected, and a fine pattern is drawn between the metal patterns formed already in response to the result. Thereafter, it is again developed and the resist 3 is removed. The metal 2 is again dry etched. Thus, it can prevent the resolution due to an electron beam proximity effect from decreasing, thereby obtaining a fine pattern.

9. 发明专利

JPS6032327A ETCHING DEVICE 失效
公开(公告)号：JPS6032327A
公开(公告)日：1985-02-19
申请号：JP14104783
申请日：1983-08-03
申请人： HITACHI LTD
发明人： SOGA TAKASHI , MOCHIJI KOUZOU , KIMURA TAKESHI , OOHAYASHI HIDEHITO
IPC分类号： H01L21/306
摘要： PURPOSE:To enable to etch without causing the generation of cracks, etc., in a substrate during the manufacturing time of X-ray masks by a method where O- rings are provided on a sample stand or the back surface of a cap and the fixation of the substrate is performed through the O-rings. CONSTITUTION:A nitriding silicon film 3 is formed on a silicon substrate 4 by an atmospheric CVD method and a nitriding boron film 2 is formed on the top layer thereof by a frequency sputtering method. After the multilayer film was formed, the silicon substrate 4 is fixed by an etching jig through O-rings 7 or 7' and is revolved in an etching solution along with the jig. As a result, a desired silicon substrate is etched and removed. According to this method, as the substrate can be fixed without correcting its warpage, superfluous stress, that effects in the thin film formed on the substrate, is reduced, thereby enabling to dissolve the generation of crack in the substrate, which occurs during the etching time.

10. 发明专利

JPH07283103A SEMICONDUCTOR SUBSTRATE, FORMATION OF POSITION DETECTION MARK AND MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH07283103A
公开(公告)日：1995-10-27
申请号：JP6825794
申请日：1994-04-06
申请人： HITACHI LTD
发明人： KATAGIRI SOUICHI , TERASAWA TSUNEO , SOGA TAKASHI , OGAWA TARO
IPC分类号： G01B11/00 , H01L21/027 , H01L21/68
摘要： PURPOSE:To provide a semiconductor substrate which enables improvement of positioning accuracy of an aligner or a pattern generator. CONSTITUTION:The semiconductor substrate has a protection film 2 for flattening a surface of a position detection mark 3a with a recessed part which is provided on a surface wherein a semiconductor element of a wafer substrate 1 is formed or on an opposite surface thereof. A position detection mark consisting of a recessed part of two or more kinds of cycle periods can be provided on the surface wherein a semiconductor element of a wafer substrate is formed or on the opposite surface thereof.

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