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1. 发明专利

JP2001085541A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND MANUFACTURE THEREOF 失效
公开(公告)号：JP2001085541A
公开(公告)日：2001-03-30
申请号：JP25799099
申请日：1999-09-10
申请人： HITACHI LTD , HITACHI DEVICE ENG
发明人： KOBAYASHI TAKASHI , GOTO YASUSHI , KURE TOKUO , KURATA HIDEAKI , KUME HITOSHI , KIMURA KATSUTAKA , SAEKI SHUNICHI
IPC分类号： H01L21/336 , H01L21/8247 , H01L27/115 , H01L29/788 , H01L29/792
摘要： PROBLEM TO BE SOLVED: To improve the reliability of a semiconductor integrated circuit with a 3rd gate after repetitive writing, while making the device fine and improving its operating speed. SOLUTION: This integrated circuit device has a source-drain diffused layer region 205 of a 2nd conduction type formed in a well 201 of a 1st conductivity- type, a floating gate 203b formed on a semiconductor substrate 200 across an insulating film 202, a control gate 211a formed on the floating gate 203b across a silicon oxide film 210a into which nitrogen is introduced, and the 3rd gate 207a which is formed across the semiconductor substrate, the floating gate, the control gate, and an insulating film and different from the floating gate and control gate. In this case, the 3rd gate is embedded in the gap of the floating gate perpendicular to word lines and channels, at a altitude lower than the floating gate 203b.

2. 发明专利

JP2009124013A Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2009124013A
公开(公告)日：2009-06-04
申请号：JP2007297854
申请日：2007-11-16
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： GOTO YASUSHI , FUJIMORI TSUKASA , TEI KIGEN , YAMANAKA KIYOKO
IPC分类号： H01L29/84 , B81B3/00 , G01C19/56 , G01C19/5747 , G01C19/5769 , G01P15/125 , H01L21/3205 , H01L21/336 , H01L21/768 , H01L21/8234 , H01L23/52 , H01L23/522 , H01L27/00 , H01L27/06 , H01L27/08 , H01L27/088 , H01L29/786
CPC分类号： B81C1/00246 , B81B2201/0235 , B81C2203/0728 , B81C2203/0735 , B81C2203/0778 , H01L21/76898 , H01L23/481 , H01L2924/0002 , H01L2924/00012 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To simplify a packaging structure of a semiconductor device having a MEMS sensor and an LSI circuit as well as achieving both downsizing and thickness reduction and sensitivity improvement of the semiconductor device that has the MEMS sensor formed by bulk micromachining technique such as an acceleration sensor and an angular rate sensor, and the LSI circuit.
SOLUTION: An integrated circuit having MISFETs and wiring is formed on a silicon layer 102 of an SOI substrate, and the MEMS sensor containing a structure 125 inside is formed by processing a substrate layer 100 of the SOI substrate. In other words, by using both surfaces of the SOI substrate, the integrated circuit and the MEMS sensor are mounted on one SOI substrate. The integrated circuit and the MEMS sensor are electrically connected to each other by a through-electrode 121 provided in the SOI substrate.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了简化具有MEMS传感器和LSI电路的半导体器件的封装结构，以及实现具有通过体微加工形成的MEMS传感器的半导体器件的小型化和厚度减小以及灵敏度提高技术如加速度传感器和角速度传感器以及LSI电路。解决方案：在SOI衬底的硅层102上形成具有MISFET和布线的集成电路，并且通过处理SOI衬底的衬底层100来形成内部具有结构125的MEMS传感器。换句话说，通过使用SOI衬底的两个表面，集成电路和MEMS传感器安装在一个SOI衬底上。集成电路和MEMS传感器通过设置在SOI衬底中的通孔121彼此电连接。版权所有（C）2009，JPO＆INPIT

3. 发明专利

JP2007035290A Switch, semiconductor device, and manufacturing method of the same 有权
标题翻译：开关，半导体器件及其制造方法
公开(公告)号：JP2007035290A
公开(公告)日：2007-02-08
申请号：JP2005212243
申请日：2005-07-22
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： YAMANAKA KIYOKO , GOTO YASUSHI
IPC分类号： H01H1/06 , B81B3/00 , B81C1/00 , H01H59/00 , H01L21/8234 , H01L27/06
CPC分类号： H01H1/0036 , B81B2207/07 , B81C1/00246 , B81C2203/0136 , B81C2203/0735 , H01H59/0009
摘要： PROBLEM TO BE SOLVED: To provide an MEMS switch which is mounted together with a CMOS circuit, and has a contact with high mechanical and electric reliability.
SOLUTION: A movable part 1 constituting an MEMS switch and an insulating film 3 having high affinity with a CMOS process formed on a contact face of a fixed part 2 facing the movable part are formed. When using the switch, the movable part is moved by impressing a voltage on a driving part 4 and the movable part 1, and after making the movable part 1 contact with the fixed part 2, a voltage exceeding breakdown electric field strength of the insulation film 3 is impressed on the insulation film 3 to generate a dielectric breakdown. Thus, by reforming the insulation film 3 once, a part of a switch contact where mechanical fatigue is concentrated is protected, and a contact, transmitting electric signal through a current flow passage formed by the dielectric breakdown, is provided.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种与CMOS电路一起安装并具有高机械和电可靠性的接触的MEMS开关。解决方案：形成一个构成MEMS开关的可移动部件1和与形成在面向可动部件的固定部件2的接触面上的CMOS工艺具有高亲和力的绝缘膜3。当使用开关时，通过在驱动部件4和可动部件1上施加电压来移动可动部件，并且在使可动部件1与固定部件2接触之后，超过绝缘膜的击穿电场强度的电压 3被印在绝缘膜3上以产生绝缘击穿。因此，通过一次重整绝缘膜3，保护机械疲劳集中的开关接点的一部分被保护，并且提供通过由电介质击穿形成的电流流路传输电信号的接触。版权所有（C）2007，JPO＆INPIT

4. 发明专利

JP2006155009A Gas detection system 有权
标题翻译：气体检测系统
公开(公告)号：JP2006155009A
公开(公告)日：2006-06-15
申请号：JP2004341897
申请日：2004-11-26
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： YOKOZAWA KOICHI , NAKANO SADASHIGE , GOTO YASUSHI
IPC分类号： G08B21/16 , G01N27/12 , G01N27/18 , G01N27/26 , G01N27/409
CPC分类号： G01N33/0063 , G01N27/123
摘要： PROBLEM TO BE SOLVED: To restrain electric power consumption in a detection system using a gas sensor requiring heating for highly precise measurement. SOLUTION: This detection system is constituted of the plurality of gas sensors communicated with a server by radio communication, and each of the gas sensors is provided with a heater, a controller for controlling ON/OFF operations for electrification of the heater, and a comparator for comparing a detected gas concentration with a prescribed threshold value. The heaters in all the gas sensors are not electrified usually, the each gas sensor measures the gas concentration at low precision to be compared all the time with the threshold value. When the gas concentration exceeds the threshold value in the one gas sensor, the own heater is turned on to be switched to high precision of measurement, and the heater is turned off after finishing the measurement. Detection of exceeding the threshold value is reported to the server at the same time, and the server lowers the threshold value of the gas sensor in the periphery of the gas sensor notified with the detection of exceeding the threshold value so as to make a monitoring level severe. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了抑制使用需要加热的气体传感器进行高精度测量的检测系统的电力消耗。解决方案：该检测系统由通过无线电通信与服务器通信的多个气体传感器构成，并且每个气体传感器设置有加热器，用于控制加热器通电的ON / OFF操作的控制器，以及用于将检测到的气体浓度与规定的阈值进行比较的比较器。所有气体传感器中的加热器通常不通电，每个气体传感器以低精度测量气体浓度，以便始终与阈值进行比较。当气体浓度超过一个气体传感器中的阈值时，自身加热器被打开以切换到高精度的测量，并且在完成测量之后关闭加热器。同时向服务器报告超过阈值的检测，并且服务器降低通过超过阈值的检测通知的气体传感器周围的气体传感器的阈值，以使监视电平严重。版权所有（C）2006，JPO＆NCIPI

5. 发明专利

JP2005228785A Semiconductor chip with coil-like antenna and communication system using the same 有权
标题翻译：具有线圈天线的半导体芯片和使用该天线的通信系统
公开(公告)号：JP2005228785A
公开(公告)日：2005-08-25
申请号：JP2004033293
申请日：2004-02-10
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： HASEBE TAKEHIKO , GOTO YASUSHI , KAMISAKA KOICHI , YAZAWA YOSHIAKI , TORIGOE MAKOTO
IPC分类号： G06K19/07 , G06K19/077 , H01F17/04 , H01L21/822 , H01L23/48 , H01L23/522 , H01L23/538 , H01L27/04 , H01Q1/22 , H01Q7/00 , H01Q7/06
CPC分类号： H01Q1/2225 , G06K7/10178 , G06K19/07749 , G06K19/07756 , G06K19/07775 , G06K19/07779 , G06K19/07783 , G06K19/07784 , H01L23/48 , H01L23/5227 , H01L2924/0002 , H01L2924/3011 , H01Q1/22 , H01Q7/00 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To solve the problem that the communication distance is reduced with the decrease of an induced voltage when a coil-like antenna is miniaturized to a chip size. SOLUTION: The semiconductor chip has a coil-like antenna and a circuit surface for transmitting/receiving radio signals to/from an external apparatus. It has a constitution for increasing the electromagnetic coupling coefficient of the coil-like antenna with the external apparatus. Its concrete example is constituted such that a magnetic block is disposed, the coil-like antenna is formed with a laminate of multiply laminated conductor layers and insulation layers or the coil-like antenna is disposed in an outer region than the periphery of the circuit on the semiconductor chip, etc. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了解决当线圈状天线小型化为芯片尺寸时，感应电压降低时通信距离减小的问题。解决方案：半导体芯片具有线圈状天线和用于向外部设备发送/接收无线电信号的电路表面。它具有用外部装置增加线圈状天线的电磁耦合系数的结构。其具体实例被构造成使得磁块被布置，线圈状天线由多层叠导体层和绝缘层的叠层形成，或者线圈状天线设置在比电路周边的外部区域半导体芯片等。版权所有（C）2005，JPO＆NCIPI

6. 发明专利

JPH1012844A SEMICONDUCTOR STORAGE DEVICE AND ITS MANUFACTURE 失效
公开(公告)号：JPH1012844A
公开(公告)日：1998-01-16
申请号：JP16652796
申请日：1996-06-27
申请人： HITACHI LTD
发明人： KUMIHASHI KOSEI , GOTO YASUSHI , TORII KAZUNARI , YOKOYAMA NATSUKI , KURE TOKUO
IPC分类号： H01L21/285 , H01L21/28 , H01L21/316 , H01L21/324 , H01L21/822 , H01L21/8242 , H01L27/04 , H01L27/108
摘要： PROBLEM TO BE SOLVED: To improve reliability without deteriorating electric characteristics of a capacitor insulating film, by constituting an upper electrode by using a laminated film composed of a first conductor layer constituted of thin film conductor having film pressure transmitting water content on the surface of an insulating film, and a second conductor layer being in contact with the first conductor layer. SOLUTION: A capacitor is constituted of a lower Pb electrode film 108, a Pb(Zr,Ti)O3 insulating film 109, a first upper Pb electrode film 110 and a second upper Pb electrode film 111. In order to restrain diffusion of Pt from the lower Pt electrode film 108 to a poly Si plug 106, the capacitor is electrically connected with the poly Si plug 106 via a barrier TiN film 107. In order to eliminate sticking water on an interface between the Pb(Zr,Ti)O3 insulating film 109 and the first upper Pt electrode film 110, after the first upper Pt electrode film 110 is deposited, the first upper Pt electrode film 110 is thinned. Thereby reliability is improved without deteriorating high permitivity and ferroelectric characteristics of an insulating material.

7. 发明专利

JPH09298184A ETCHING METHOD OF COPPER OR COPPER ALLOY 失效
公开(公告)号：JPH09298184A
公开(公告)日：1997-11-18
申请号：JP11229696
申请日：1996-05-07
申请人： HITACHI LTD
发明人： MIYAZAKI HIROSHI , HINODE KENJI , TAKEDA KENICHI , GOTO YASUSHI , KUMIHASHI KOSEI
IPC分类号： C23F4/00 , H01L21/302 , H01L21/3065 , H01L21/3213
摘要： PROBLEM TO BE SOLVED: To avoid the side etching of a copper film and the penetration of chlorine into the copper film. SOLUTION: Gas containing chlorine is supplied to the surface of a copper film with a pressure in a range of 0.5-20mTorr while the temperature of a substrate is kept at 230-270 deg.C by heating and the copper film is exposed to a reactive plasma generated from chlorine gas to etch the copper film. With this constitution, as the side-etching can be avoided and the etching with the satisfactory selectivity can be performed, a fine copper wiring with the high process accuracy can be supplied. Further, as the penetration of chlorine into the copper film is avoided, corrosion can be avoided.

8. 发明专利

JP2015015848A 自立電源システム有权
标题翻译：自动电源系统
公开(公告)号：JP2015015848A
公开(公告)日：2015-01-22
申请号：JP2013141840
申请日：2013-07-05
申请人：株式会社日立製作所 , Hitachi Ltd
发明人： FUJIMORI TSUKASA , GOTO YASUSHI , KURATA HIDEAKI , TAKANO HIDEAKI
IPC分类号： H02J7/00 , H02J15/00
CPC分类号： H02J7/345 , H02J7/0013 , H02J7/0054 , H02J7/0055 , H02J7/0063 , H02J7/007 , H02J7/35 , H02J2007/0067
摘要：【課題】発電素子の発電量が小さい場合でも、発電制御回路を短時間で起動させ、負荷装置へ短時間で電力を供給すること。【解決手段】自立電源システム1は、発電素子2の発電効率を制御する発電制御回路4と、発電素子2で発電した電力を充電する蓄電素子群C1〜C6と、蓄電素子群の充電動作と放電動作を制御する充電制御回路5を備える。蓄電素子群は、発電制御回路4と充電制御回路5に電力を供給する1次蓄電素子C1と、負荷装置10に電力を供給する2次蓄電素子C2〜C5を有する。発電素子2で発電した電力は1次蓄電素子C1に優先して充電された後、1次蓄電素子C1から2次蓄電素子C2〜C5に充電される。1次蓄電素子C1の容量値は、2次蓄電素子C2〜C5の容量値よりも小さくする。【選択図】図1
摘要翻译：要解决的问题：即使在发电元件的发电量小的情况下，通过在短时间内激活发电控制电路，也能够在短时间内向负载装置供电。解决方案：自主供电系统1包括：用于控制发电元件2的发电效率的发电控制电路4; 对由发电元件2产生的电力进行充电的C1〜C6的蓄电元件组; 以及用于控制蓄电元件组的充电操作和放电操作的充电控制电路5。蓄电元件组包括：用于向发电控制电路4和充电控制电路5供电的主蓄电元件C1; 以及用于向负载装置10供电的二次蓄电元件C2〜C5。一次电力存储元件C1优先用发电元件2产生的电力充电，之后二次蓄电元件C2〜C5为从主蓄电元件C1充电。主蓄电元件C1的容量值被设定为小于二次蓄电元件C2〜C5的容量值。

9. 发明专利

JP2013029522A Angular velocity detecting device 有权
标题翻译：角速度检测装置
公开(公告)号：JP2013029522A
公开(公告)日：2013-02-07
申请号：JP2012220218
申请日：2012-10-02
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： TEI KIGEN , GOTO YASUSHI
IPC分类号： G01C19/5747 , G01C19/5769
摘要： PROBLEM TO BE SOLVED: To provide a high-performance angular velocity detecting device.SOLUTION: A driving part comprising an exciting element 13 and a Coriolis element 14 is levitated by at least two fixing beams 12a which share a fixed end and are extending in a direction orthogonal to a vibrating direction, thereby vibrating the driving part. Even when a substrate is deformed by mounting or heat fluctuation, internal stress generated to the fixing beams and a supporting beam is small, thereby a vibrating state such as resonance frequency and vibration amplitude is maintained constant. Therefore, a high-performance angular velocity detecting device which is robust to change in mounting environment can be obtained.
摘要翻译：要解决的问题：提供一种高性能的角速度检测装置。解决方案：包括激发元件13和科里奥利斯元件14的驱动部分由至少两个共享固定端并沿与振动方向正交的方向延伸的固定梁12a悬浮，从而使驱动部分振动。即使当基板由于安装或热波动而变形时，产生到固定梁和支撑梁的内部应力也小，因此诸如共振频率和振动幅度的振动状态保持恒定。因此，可以获得稳定的安装环境变化的高性能角速度检测装置。版权所有（C）2013，JPO＆INPIT

10. 发明专利

JP2013027183A Storage circuit 审中-公开
标题翻译：存储电路
公开(公告)号：JP2013027183A
公开(公告)日：2013-02-04
申请号：JP2011160442
申请日：2011-07-22
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： ASAI KENGO , ISOBE ATSUSHI , OSADA KENICHI , GOTO YASUSHI , TAKANO HIDEAKI
IPC分类号： H02J7/00 , H01M10/44
CPC分类号： H02J7/34 , H01G5/38 , H01G5/40 , H01H59/0009
摘要： PROBLEM TO BE SOLVED: To provide a storage circuit with a power generation element, capable of achieving more stable power storage or a stable power supply system with at least two circuits.SOLUTION: The storage circuit (900) includes a first capacitor (C1) connected with a power generation element (300) through a first diode (D1) and a second capacitor (C2) connected with the power generation element through the second diode (D2) and a switch (S1). A conduction state of the switch is controlled by a potential difference (driving voltage V) between a second electrode and a third electrode so that a driving voltage obtained when the switch reaches a conductive state is larger than that obtained when the switch reaches a non-conductive state.
摘要翻译：要解决的问题：提供具有能够实现更稳定的蓄电的发电元件的存储电路或具有至少两个电路的稳定的电源系统。解决方案：存储电路（900）包括通过第一二极管（D1）与发电元件（300）连接的第一电容器（C1）和通过第二电容器连接到发电元件的第二电容器（C2）二极管（D2）和开关（S1）。开关的导通状态由第二电极和第三电极之间的电位差（驱动电压V）控制，使得当开关达到导通状态时获得的驱动电压大于当开关达到非导通状态时获得的驱动电压，导电状态。版权所有（C）2013，JPO＆INPIT

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