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    • 6. 发明专利
    • WIRING BOARD
    • JPH01248596A
    • 1989-10-04
    • JP7430188
    • 1988-03-30
    • HITACHI LTD
    • HIROTA KAZUOSATO RYOHEITAKENAKA TAKATSUGUNEZU TOSHITADA
    • H05K3/46H05K7/06
    • PURPOSE:To maintain an approximately constant characteristic impedance in wirings employing discrete wires and facilitate suppression of a crosstalk between the wirings by providing grounding wires whose number has a certain ratio to the number of signal wires. CONSTITUTION:LSI's 2 are mounted on a module board 1 and connected to the electrodes on the module board 1 with solder 6 or the like. Wirings 3 are generally composed of covered conductors and the portions of the conductors from which the coverings are removed are connected to the electrodes by wire bonding. A plurality of signal wires are arranged in parallel with each other in a plurality of stages and have a grounding pattern 5 in common. Grounding wires 32 whose number has a certain ratio to the number of the signal wires 31 (one grounding wires to two signal wires) are also provided. Therefore, as the signal wires 31 from the ground pattern 5 do not have the same grounding wire 32 in common, the characteristic impedance of the signal wiring 31 can be approximately constant and a crosstalk can be suppressed.
    • 7. 发明专利
    • SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
    • JPS6410634A
    • 1989-01-13
    • JP16536687
    • 1987-07-03
    • HITACHI LTDHITACHI MICROCUMPUTER ENG
    • NEZU TOSHITADATAKENAKA RYUJIIMADA HARUHIKO
    • H01L21/60H05K1/11H05K3/34
    • PURPOSE:To remove a semiconductor integrated circuit from a wiring board without causing a thermal influence due to mechanical traction or shear by a method wherein a diameter of an electrode on the side of the wiring board is made larger than that of an electrode on the side of the semiconductor integrated circuit. CONSTITUTION:In a semiconductor integrated circuit device where a connection part between a semiconductor integrated circuit 1 and a wiring board 3 is brazed by a phase-down bonding method, a diameter of an electrode 4 on the side of the wiring board 3 is made larger than that of an electrode 2 of the semicondcutor integrated circuit 1 while a tolerance value due to a production process of the wiring board 3 and another tolerance value due to the production process of the diameter 2 on the side of the semiconductor integrated circuit 1 are included. By this setup, when the semiconductor integrated circuit 1 is removed from the wiring board 3, a stress due to mechanical traction or shear is concentrated on the electrode on the side of the semiconductor integrated circuit; the electrode of the semiconductor integrated circuit is cut; accordingly, the semiconductor integrated circuit can be removed without damaging the electrode on the side of the wiring board.