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1. 发明专利

JP2012142480A Magnetic tunnel junction element, method of manufacturing the same and mram 有权
标题翻译： MAGNETIC TUNNEL JUNCTION ELEMENT，METHOD OF MANTIFACTURING THE SAME AND MRAM
公开(公告)号：JP2012142480A
公开(公告)日：2012-07-26
申请号：JP2011000419
申请日：2011-01-05
申请人： Fujitsu Ltd , 富士通株式会社
发明人： RI EIMIN
IPC分类号： H01L43/10 , G01R33/09 , G11B5/39 , H01F10/32 , H01L21/8246 , H01L27/105 , H01L43/08 , H01L43/12
摘要： PROBLEM TO BE SOLVED: To provide a magnetic tunnel junction element that is hardly affected by deposit generated at the side of a laminate structure.SOLUTION: A buffer layer formed of conductive material having a different etching characteristic from a lower electrode is disposed on a partial area of the lower electrode formed on a substrate. A first magnetization free layer formed of amorphous ferromagnetic material is disposed on the buffer layer. A second magnetization free layer formed of crystallized ferromagnetic material is disposed on the first magnetization free layer, and a tunnel barrier layer is disposed on the second magnetization free layer. A magnetization fixing layer whose magnetization direction is fixed is disposed on the tunnel barrier layer, and an upper electrode layer is disposed on the magnetization fixing layer.
摘要翻译：要解决的问题：提供几乎不受层压结构侧面沉积物影响的磁性隧道结元件。解决方案：在形成在基板上的下电极的局部区域上设置由具有与下电极不同的蚀刻特性的导电材料形成的缓冲层。由非晶铁磁材料形成的第一磁化自由层设置在缓冲层上。由结晶的铁磁材料形成的第二磁化自由层设置在第一磁化自由层上，隧道势垒层设置在第二磁化自由层上。其磁化方向固定的磁化固定层设置在隧道势垒层上，上电极层设置在磁化固定层上。版权所有（C）2012，JPO＆INPIT

2. 发明专利

JP2012195373A Magnetic device and manufacturing method thereof 有权
标题翻译：磁性装置及其制造方法
公开(公告)号：JP2012195373A
公开(公告)日：2012-10-11
申请号：JP2011056835
申请日：2011-03-15
申请人： Fujitsu Ltd , 富士通株式会社
发明人： RI EIMIN
IPC分类号： H01L43/10 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To provide a magnetic device capable of improving efficiency of a manufacturing step while securing non-crystalline property and flatness of a surface of a lower electrode.SOLUTION: A magnetic device is provided with an electrode 10 and a magnetic resistance element 20 formed on the electrode 10. The electrode 10 has a first metal layer 12 containing tantalum, a buffer layer 16 which is provided on the first metal layer 12 and uses a non-crystalline alloy including at least a component which is the same as one of the materials constituting the magnetic resistance element 20 and is more hard to diffuse than Cu as a material, and a second metal layer 18 containing the tantalum provided on the buffer layer 16.
摘要翻译：解决的问题：提供能够提高制造工序的效率同时确保下部电极的表面的非晶性和平坦性的磁性装置。解决方案：磁性装置设置有形成在电极10上的电极10和磁阻元件20.电极10具有包含钽的第一金属层12，设置在第一金属层上的缓冲层16 并且使用至少包含与构成磁阻元件20的材料之一相同的部件并且比Cu更难扩散的非晶合金作为材料，并且包含钽的第二金属层18 在缓冲层16上。版权所有（C）2013，JPO＆INPIT

3. 发明专利

JP2012114288A Magnetoresistive element and semiconductor memory 有权
标题翻译：磁性元件和半导体存储器
公开(公告)号：JP2012114288A
公开(公告)日：2012-06-14
申请号：JP2010262721
申请日：2010-11-25
申请人： Fujitsu Ltd , 富士通株式会社
发明人： RI EIMIN
IPC分类号： H01L27/105 , G11C11/15 , H01L21/8246 , H01L29/82 , H01L43/08
CPC分类号： G11C11/161 , G11C11/1659 , G11C11/1675 , G11C11/5607
摘要： PROBLEM TO BE SOLVED: To ensure both the margin of the write current and the margin of retention.SOLUTION: The magnetoresistive element comprises: a first ferromagnetic tunnel junction element where a first fixed layer, a first tunnel insulating film and a first free layer are laminated; and a second ferromagnetic tunnel junction element where a second fixed layer, a second tunnel insulating film and a second free layer are laminated, the second ferromagnetic tunnel junction element being connected to the first ferromagnetic tunnel junction element in series. Lamination direction of the first fixed layer, first tunnel insulating film and first free layer is opposite from the lamination direction of the second fixed layer, second tunnel insulating film and second free layer. The thickness of the first tunnel insulating film is different from the thickness of the second tunnel insulating film, and the first ferromagnetic tunnel junction element and second ferromagnetic tunnel junction element are formed using a common mask material by etching. Consequently, the cross-sectional area and the volume of the first and second free layers can be substantially equalized, and the write current can be set commonly.
摘要翻译：要解决的问题：确保写入电流的裕度和保留余量。解决方案：磁阻元件包括：第一铁磁隧道结元件，其中第一固定层，第一隧道绝缘膜和第一自由层被层压; 以及层叠有第二固定层，第二隧道绝缘膜和第二自由层的第二铁磁隧道结元件，所述第二铁磁隧道结元件串联连接到所述第一铁磁隧道结元件。第一固定层，第一隧道绝缘膜和第一自由层的层叠方向与第二固定层，第二隧道绝缘膜和第二自由层的层叠方向相反。第一隧道绝缘膜的厚度与第二隧道绝缘膜的厚度不同，并且通过蚀刻使用公共掩模材料形成第一铁磁隧道结元件和第二铁磁隧道结元件。因此，第一自由层和第二自由层的横截面积和体积可以基本相等，并且可以共同地设定写入电流。版权所有（C）2012，JPO＆INPIT

4. 发明专利

JP2013131521A Magnetic resistance element, semiconductor memory, and system 审中-公开
标题翻译：电磁元件，半导体存储器和系统
公开(公告)号：JP2013131521A
公开(公告)日：2013-07-04
申请号：JP2011278056
申请日：2011-12-20
申请人： Fujitsu Ltd , 富士通株式会社
发明人： YOSHIDA CHIKAKO , RI EIMIN
IPC分类号： H01L43/08 , G11C11/15 , H01L21/8246 , H01L27/105 , H01L29/82
CPC分类号： G11C11/161
摘要： PROBLEM TO BE SOLVED: To provide a magnetic resistance element whose characteristics are not deteriorated even by heat treatment at a high temperature.SOLUTION: A magnetic resistance element has: a free layer arranged on a semiconductor substrate; a tunnel insulating film arranged on the free layer; a fixed layer arranged on the tunnel insulating film, and including first and second magnetic layers opposed to each other while interposing an Ru film therebetween; and an antiferromagnetic layer arranged on the fixed layer, and formed by PtMn. Thickness of the Ru film is 1.5 nm or more and 1.7 nm or less.
摘要翻译：要解决的问题：提供即使在高温下进行热处理也不会劣化其特性的磁阻元件。解决方案：磁阻元件具有：设置在半导体衬底上的自由层; 布置在自由层上的隧道绝缘膜; 布置在隧道绝缘膜上的固定层，并且包括彼此相对的第一和第二磁性层，同时在其间插入Ru膜; 以及设置在固定层上的反铁磁层，由PtMn形成。 Ru膜的厚度为1.5nm以上1.7nm以下。

5. 发明专利

JP2013008865A Magnetoresistive element and magnetic storage device 有权
标题翻译：磁电元件和磁存储器件
公开(公告)号：JP2013008865A
公开(公告)日：2013-01-10
申请号：JP2011140991
申请日：2011-06-24
申请人： Fujitsu Ltd , 富士通株式会社
发明人： RI EIMIN , YOSHIDA CHIKAKO
IPC分类号： H01L21/8246 , H01L27/105 , H01L29/82 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To provide a highly reliable magnetoresistive element in which retention, especially a large retention of a pinned magnetization layer, can be ensured sufficiently while reducing the write current, and thermally stable operation is possible.SOLUTION: In an MTJ10, a tunnel barrier layer 2 is sandwiched by a lower magnetic layer 1 and an upper magnetic layer 3, and a cap layer 4 is formed on the upper magnetic layer 3. The lower magnetic layer 1 is configured to have a first free layer 1a consisting of CoFeB and in contact with the tunnel barrier layer 2, an insertion layer 1b consisting of Ta and in contact with the first free layer 1a, a spacer layer 1c consisting of Ru and in contact with the insertion layer 1b, and a second free layer 1d consisting of CoPt and in contact with the spacer layer 1c.
摘要翻译：要解决的问题：为了提供一种高度可靠的磁阻元件，其中可以在减小写入电流的同时充分确保保持，特别是大的固定磁化层的保持，并且热稳定的操作是可能的。解决方案：在MTJ10中，隧道势垒层2被下磁性层1和上磁性层3夹持，并且在上磁性层3上形成覆盖层4.下层磁性层1被配置具有由CoFeB组成并与隧道势垒层2接触的第一自由层1a，由Ta组成并与第一自由层1a接触的插入层1b，由Ru组成并与插入物接触的间隔层1c 层1b和由CoPt组成并与间隔层1c接触的第二自由层1d。版权所有（C）2013，JPO＆INPIT

6. 发明专利

JP2010212661A Magnetic random access memory 审中-公开
标题翻译：磁性随机存取存储器
公开(公告)号：JP2010212661A
公开(公告)日：2010-09-24
申请号：JP2010001862
申请日：2010-01-07
申请人： Fujitsu Ltd , 富士通株式会社
发明人： AOKI MASAKI , RI EIMIN
IPC分类号： H01L21/8246 , G11C11/15 , H01L27/105 , H01L43/08
CPC分类号： H01L27/228 , B82Y25/00 , G11C11/161 , G11C11/1659 , G11C11/1673 , G11C11/1675 , H01F10/3254 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To provide a spin torque transfer magnetic random access memory, wherein efficient writing can be performed by memory cell selection transistors of smaller size.
SOLUTION: An interlayer dielectric 26 is formed on an interlayer dielectric 22 where a bit line 24, a connecting conductor layer 25, and an MTJ element 30 are formed. In the interlayer dielectric 26, a plug 27 connected to the connecting conductor layer 25 and a plug 28 connected to the MTJ element 30 are buried. On the interlayer dielectric 26, local internal wiring 29 electrically connecting the plug 27 and plug 28 is formed. Consequently, a free layer side of the MTJ element 30 is electrically connected to an n-type drain region 16 through the plug 28, the local internal wiring 29, the plug 27, the connecting conductor layer 25, a plug 23, a connecting conductor layer 21, and a plug 19.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种自旋转矩传递磁随机存取存储器，其中可以通过较小尺寸的存储单元选择晶体管执行有效写入。解决方案：在形成位线24，连接导体层25和MTJ元件30的层间电介质22上形成层间电介质26。在层间电介质26中，埋入与连接导体层25连接的插头27和与MTJ元件30连接的插头28。在层间电介质26上形成电连接插头27和插头28的局部内部布线29。因此，MTJ元件30的自由层侧通过插头28，本地内部布线29，插头27，连接导体层25，插头23，连接导体等与n型漏极区域16电连接层21和插头19.版权所有（C）2010，JPO＆INPIT

7. 发明专利

JP2012174709A Magnetic tunnel junction element and magnetic random access memory 有权
标题翻译：磁性隧道结构元件和磁性随机存取存储器
公开(公告)号：JP2012174709A
公开(公告)日：2012-09-10
申请号：JP2011031972
申请日：2011-02-17
申请人： Fujitsu Ltd , 富士通株式会社
发明人： RI EIMIN
IPC分类号： H01L27/105 , H01L21/8246 , H01L29/82 , H01L43/08 , H01L43/10
摘要： PROBLEM TO BE SOLVED: To provide an MTJ element capable of not only reducing writing current but also having a large MR ratio.SOLUTION: A magnetic tunnel junction element comprises a magnetization free layer, a magnetization fixed layer, a tunnel barrier layer arranged between the magnetization free layer and the magnetization fixed layer. The magnetization free layer includes a perpendicular magnetization free layer, an in-plane magnetization free layer arranged between the perpendicular magnetization free layer and the tunnel barrier layer, and a nonmagnetic intermediate layer arranged between the perpendicular magnetization free layer and the in-plane magnetization free layer. An easy magnetization direction of the perpendicular magnetization free layer is perpendicular to a film plane and an easy magnetization direction of the in-plane magnetization free layer is parallel to the film plane, and magnetization of the perpendicular magnetization free layer is directed in an in-plane direction by exchange coupling with the in-plane magnetization free layer via the nonmagnetic intermediate layer.
摘要翻译：要解决的问题：提供一种不仅可以减小写入电流而且具有大的MR比的MTJ元件。解决方案：磁性隧道结元件包括磁化自由层，磁化固定层，布置在磁化自由层和磁化固定层之间的隧道势垒层。无磁化层包括垂直磁化自由层，布置在垂直磁化自由层和隧道势垒层之间的面内磁化自由层，以及布置在垂直磁化自由层和平面内磁化自由层之间的非磁性中间层层。垂直磁化自由层的易磁化方向垂直于膜平面，并且平面内磁化自由层的容易磁化方向平行于膜平面，垂直磁化自由层的磁化方向定向在磁场中，通过经由非磁性中间层与面内磁化自由层的交换耦合。版权所有（C）2012，JPO＆INPIT

8. 发明专利

JP2012174708A Magnetic tunnel junction element and magnetic random access memory 有权
标题翻译：磁性隧道结构元件和磁性随机存取存储器
公开(公告)号：JP2012174708A
公开(公告)日：2012-09-10
申请号：JP2011031971
申请日：2011-02-17
申请人： Fujitsu Ltd , 富士通株式会社
发明人： RI EIMIN
IPC分类号： H01L27/105 , H01F10/16 , H01F10/32 , H01L21/8246 , H01L29/82 , H01L43/08 , H01L43/10
摘要： PROBLEM TO BE SOLVED: To solve the problem of difficulty that a sufficient large MR ratio cannot be obtained with a GMR element and to reduce inversion current in an MTJ element by which the large MR ratio can be achieved.SOLUTION: A perpendicular magnetic anisotropic film is formed on a lower electrode with an easy magnetization direction being in a thickness direction. A spacer layer formed of nonmagnetic material is arranged on the perpendicular magnetic anisotropic film. A base layer including amorphous conductive material is arranged on the spacer layer. A magnetization free layer is arranged on the base layer with the easy magnetization direction being in an in-plane direction. A tunnel barrier layer is arranged on the magnetization free layer. A magnetization fixed layer is arranged on the tunnel barrier layer with a magnetization direction being fixed in the in-plane direction. The spacer layer has a thickness not allowing exchange interaction to occur between the perpendicular magnetic anisotropic film and the magnetization free layer and is thinner than a spin relaxation length.
摘要翻译：解决问题：为了解决难以用GMR元件获得足够大的MR比并且减少可以实现大MR比的MTJ元件中的反转电流的难题的问题。解决方案：垂直磁各向异性膜形成在下电极上，其易磁化方向为厚度方向。由非磁性材料形成的间隔层布置在垂直磁性各向异性膜上。包括非晶导电材料的基层布置在间隔层上。磁化自由层布置在基层上，易磁化方向在面内方向。隧道势垒层设置在无磁化层上。磁化固定层布置在隧道势垒层上，其磁化方向在面内方向固定。间隔层具有不允许在垂直磁各向异性膜和无磁化层之间发生交换相互作用并且比自旋弛豫长度更薄的厚度。版权所有（C）2012，JPO＆INPIT

9. 发明专利

JP2012114289A Magnetoresistive element, semiconductor memory and method of manufacturing magnetoresistive element 有权
标题翻译：磁性元件，半导体存储器和制造磁性元件的方法
公开(公告)号：JP2012114289A
公开(公告)日：2012-06-14
申请号：JP2010262722
申请日：2010-11-25
申请人： Fujitsu Ltd , 富士通株式会社
发明人： RI EIMIN , YOSHIDA CHIKAKO
IPC分类号： H01L27/105 , H01L21/8246 , H01L29/82 , H01L43/08 , H01L43/10 , H01L43/12
摘要： PROBLEM TO BE SOLVED: To prevent the electrical characteristics of a magnetoresistive element from deteriorating by preventing contamination of a tunnel insulating film without prolonging the etching time.SOLUTION: The magnetoresistive element has a fixed layer arranged on a semiconductor substrate, a tunnel insulating film arranged on the fixed layer, a first free layer containing Fe arranged on the tunnel insulating film, a second free layer containing Fe and Ta arranged on the first free layer, a stopper layer containing Ru arranged on the second free layer, and a hard mask arranged on the stopper layer. Since the interval of the first free layer and the stopper layer can be increased by the second free layer, Ru in the stopper layer can be prevented from adhering to the tunnel insulating film, and thereby prevented from appearing on the interface of the first free layer. Consequently, contamination of the tunnel insulating film can be prevented without prolonging the etching time, and the electrical characteristics of the magnetoresistive element can be prevented from deteriorating.
摘要翻译：要解决的问题：通过防止隧道绝缘膜的污染而不延长蚀刻时间来防止磁阻元件的电特性劣化。解决方案：磁阻元件具有布置在半导体衬底上的固定层，布置在固定层上的隧道绝缘膜，包含布置在隧道绝缘膜上的Fe的第一自由层，包含Fe和Ta的第二自由层布置在第一自由层上，设置有布置在第二自由层上的Ru的阻挡层和布置在阻挡层上的硬掩模。由于可以通过第二自由层增加第一自由层和阻挡层的间隔，所以可以防止阻挡层中的Ru粘附到隧道绝缘膜，从而防止出现在第一自由层的界面上。因此，可以防止隧道绝缘膜的污染，而不会延长蚀刻时间，并且可以防止磁阻元件的电特性劣化。版权所有（C）2012，JPO＆INPIT

10. 发明专利

JP2011114108A Spin injection magnetic random access memory 有权
标题翻译：旋转注射磁性随机存取存储器
公开(公告)号：JP2011114108A
公开(公告)日：2011-06-09
申请号：JP2009268296
申请日：2009-11-26
申请人： Fujitsu Ltd , 富士通株式会社
发明人： RI EIMIN
IPC分类号： H01L21/8246 , G11C11/15 , H01L27/105 , H01L43/08
CPC分类号： G11C11/161
摘要： PROBLEM TO BE SOLVED: To provide a memory having a Multi-level cell structure using an MTJ (magnetic tunnel junction) having a smaller switching current Ic with the same area.
SOLUTION: A spin injection magnetic random access memory has an antiferromagnetic coupling structure in which filter layers 22, 32 composed of ferromagnetic layers 23, 33, nonmagnetic layers 24, 34, and ferromagnetic layers 25, 35, a plurality of ferromagnetic tunnel junction elements 21, 31 having mutually different switching current characteristics being stacked in series, and equalized in plane area of each ferromagnetic tunnel junction elements 21, 31.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供具有相同面积的具有较小开关电流Ic的MTJ（磁性隧道结）的具有多电平单元结构的存储器。解决方案：自旋注入磁性随机存取存储器具有反铁磁耦合结构，其中由铁磁层23,33，非磁性层24,34和铁磁层25,35组成的过滤层22,32，多个铁磁隧道具有相互不同的开关电流特性的接合元件21,31被串联堆叠，并且在每个铁磁隧道结元件21,31的平面区域中均衡。版权所有（C）2011，JPO和INPIT

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