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1. 发明专利

JP2007324215A Method of manufacturing tunnel magnetoresistance element and nonvolatile memory device 审中-公开
标题翻译：制造隧道磁阻元件和非易失性存储器件的方法
公开(公告)号：JP2007324215A
公开(公告)日：2007-12-13
申请号：JP2006150210
申请日：2006-05-30
申请人： Fujitsu Ltd , 富士通株式会社
发明人： OCHIAI TAKAO , UMEHARA SHINJIRO , ASHIDA YUTAKA , SATO MASASHIGE , KOBAYASHI KAZUO
IPC分类号： H01L43/12 , G11B5/39 , H01L21/8246 , H01L27/105 , H01L43/08
CPC分类号： H01F10/3254 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G11B5/3163 , G11B5/3906 , G11B5/3909 , G11C11/16 , H01F10/3272 , H01F41/304
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a tunnel magnetoresistance element which can suppress peeling of a film during manufacturing, and to provide a method of manufacturing a nonvolatile memory device. SOLUTION: An electrode 2, an antiferromagnetic film 3, a ferromagnetic film 4, a non-magnetic film 5, a ferromagnetic film 6, a tunnel insulation film 7, a ferromagnetic film 8, a Ta film 9, an Ru film 10, and a Ta film 11 are formed in sequence on a substrate 1. The thickness of the Ta film 11 is about 0.5 nm for example. The Ta film 11 is naturally oxidized after formation. Next, heat treatment is conducted to improve the characteristic of a TMR film 21. The heat treatment is applied at about 200-300°C for example. The conventional manufacturing method causes peeling of the film during the heat treatment, resulting in faults such as opening and wrinkling. Such the faults can be prevented because the Ta film 11 is formed on the uppermost surface by using this method. Then, the Ta film 11 or the like is patterned. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种制造隧道磁阻元件的方法，该方法可以抑制制造期间膜的剥离，并提供一种制造非易失性存储器件的方法。解决方案：电极2，反铁磁膜3，铁磁膜4，非磁性膜5，铁磁膜6，隧道绝缘膜7，铁磁膜8，Ta膜9，Ru膜如图10所示，Ta膜11依次形成在基板1上。例如，Ta膜11的厚度为约0.5nm。 Ta膜11在形成后自然氧化。接下来，进行热处理以提高TMR膜21的特性。例如，在约200-300℃下进行热处理。常规的制造方法在热处理期间导致膜的剥离，导致诸如开口和起皱的缺陷。由于通过使用这种方法在最上表面上形成了Ta膜11，所以能够防止这种故障。然后，对Ta膜11等进行图案化。版权所有（C）2008，JPO＆INPIT

2. 发明专利

JP2007266301A Magnetic storage device and its method of operation 审中-公开
标题翻译：磁存储器件及其操作方法
公开(公告)号：JP2007266301A
公开(公告)日：2007-10-11
申请号：JP2006089272
申请日：2006-03-28
申请人： Fujitsu Ltd , 富士通株式会社
发明人： ASHIDA YUTAKA , SATO MASASHIGE , UMEHARA SHINJIRO , OCHIAI TAKAO , KOBAYASHI KAZUO
IPC分类号： H01L21/8246 , G11C11/15 , H01L27/105 , H01L43/08
CPC分类号： G11C11/1675
摘要： PROBLEM TO BE SOLVED: To achieve the compatibility of the reduction of critical current density J C , the improvement in output voltage, and the prevention of malfunction in order to obtain a large capacity (exceeding G bit) MRAM by spin-transfer torque writing method MRAM (STS-MRAM), being related to a magnetic storage device and its method of operation. SOLUTION: Between a free magnetic layer 4C composed of one or more ferromagnetic layers and nonmagnetic layers and a pinned magnetic layer 4A of multilayered ferri-pin structure, in the case of GMR type, it is fundamental that a nonmagnetic metal layer 4B is interposed and a magnetoresistance effect element composed by being provided with a heating layer 4E in the vicinity of the free magnetic layer 4C is equipped to operate it. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：为了获得临界电流密度J SB的降低的兼容性，提高输出电压，并防止故障，以获得大容量（超过G 位）MRAM通过自旋传递转矩写入方法MRAM（STS-MRAM），与磁存储装置及其操作方法有关。解决方案：在由一个或多个铁磁层和非磁性层组成的自由磁性层4C和多层铁 - 引线结构的钉扎磁性层4A之间，在GMR型的情况下，非磁性金属层4B 并且设置由在自由磁性层4C附近设置有加热层4E而构成的磁阻效应元件来进行操作。版权所有（C）2008，JPO＆INPIT

3. 发明专利

JP2003298149A Magnetic reluctance sensor 审中-公开
标题翻译：磁性传感器
公开(公告)号：JP2003298149A
公开(公告)日：2003-10-17
申请号：JP2003029028
申请日：2003-02-06
申请人： Fujitsu Ltd , 富士通株式会社
发明人： KIKUCHI HIDEYUKI , KOBAYASHI KAZUO
IPC分类号： G11B5/39 , H01F10/14 , H01F10/32 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To provide a magnetic reluctance sensor for detecting a magnetic field by a spin valve effect, thereby enhancing detection sensitivity by increasing a change in resistance.
SOLUTION: This fundamental structure comprises first and second magnetic thin film layers 3, 5 made of NiFe or the like which are formed across an antiferromagnetic thin film layer 4 made of FeMn or the like magnetized in one direction, first and second non-magnetic thin film layers 2, 6 made of Cu or the like contiguous to the magnetic thin film layers 3, 5, respectively, and third and fourth magnetic thin film layers 1, 7 made of NiFe or the like contiguous to the non-magnetic thin film layers 2, 6, respectively. The fundamental structures are laminated in a plurality of pairs on a substrate 8 to form a pair of terminals on an uppermost layer.
COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：提供一种通过自旋阀效应检测磁场的磁阻传感器，从而通过增加电阻的变化来提高检测灵敏度。解决方案：该基本结构包括由在一个方向上被磁化的FeMn等制成的反铁磁性薄膜层4上形成的由NiFe等制成的第一和第二磁性薄膜层3,5，由分别与磁性薄膜层3,5连续的Cu等制成的磁性薄膜层2,6以及与非磁性材料相邻的NiFe等制成的第三和第四磁性薄膜层1,7 薄膜层2,6。基底结构在衬底8上以多对层叠，以在最上层形成一对端子。版权所有（C）2004，JPO

4. 发明专利

JP2003282999A Magnetic sensor 审中-公开
标题翻译：磁传感器
公开(公告)号：JP2003282999A
公开(公告)日：2003-10-03
申请号：JP2002084256
申请日：2002-03-25
申请人： Fujitsu Ltd , 富士通株式会社
发明人： SATO MASASHIGE , KIKUCHI HIDEYUKI , KOBAYASHI KAZUO
IPC分类号： G01R33/09 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To realize a magnetic sensor of low consumption power which can detect fine change of an external magnetic field with high precision.
SOLUTION: This magnetic sensor has a structure wherein a first electrode 113, a ground layer 102, a first antiferromagnetic layer 103, a first ferromagnetic layer 104, a first non-magnetic layer 105, a ferromagnetic intermediate layer 106, a second non-magnetic layer 110, a second ferromagnetic layer 111, a second antiferromagnetic layer 112 and a third electrode 115 are laminated in this order on a substrate 101, and a second electrode 114 is connected with the ferromagnetic intermediate layer 106. Directions of magnetization of the first ferromagnetic layer 104 and the second ferromagnetic layer 111 are parallel and fixed in an opposite directions with each other. Direction of magnetization of the ferromagnetic intermediate layer 106 is made freely rotatable corresponding to an external magnetic field.
COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：实现能够以高精度检测外部磁场的微小变化的低功耗的磁传感器。解决方案：该磁传感器具有这样的结构，其中第一电极113，接地层102，第一反铁磁层103，第一铁磁层104，第一非磁性层105，铁磁中间层106，第二非磁性层110，第二铁磁层111，第二反铁磁层112和第三电极115依次层叠在基板101上，第二电极114与铁磁中间层106连接。磁化方向第一铁磁层104和第二铁磁层111彼此相反地平行并固定。铁磁中间层106的磁化方向可以根据外部磁场自由旋转。版权所有（C）2004，JPO

5. 发明专利

JP2000123328A MAGNETIC SENSOR, MAGNETIC HEAD AND MAGNETIC ENCODER 失效
公开(公告)号：JP2000123328A
公开(公告)日：2000-04-28
申请号：JP28978198
申请日：1998-10-12
申请人： FUJITSU LTD
发明人： KIKUCHI HIDEYUKI , SATO MASASHIGE , KOBAYASHI KAZUO
IPC分类号： G11B5/39 , G01D5/245 , G01D5/249
摘要： PROBLEM TO BE SOLVED: To sufficiently secure rotation of magnetization of a free side magnetic layer and to improve sensitivity by providing a magnetic layer changing a magnetization direction corresponding to an external magnetic field and making function a partial area incorporated in this magnetic layer as a sensor part sensing the external magnetic field. SOLUTION: The sensor part 13 for a signal magnetic field is limited to a partial area (partial area L×hs of magnetic layer part) of a nearly central part of a tunnel joint having a spin valve structure, and the size of this area is nearly equalized to the size (h×L) of the area of the magnetic layer of a magnetic sensor. By adopting such a structure, the sensor part 13 is set in an optional place within the magnetic layer. Since the sensor part 13 becomes a part of the nearly central part of the magnetic layer, the rotation of the magnetization of respective magnetic domains of the sensor part 13 are rotated freely without being affected by the size of the magnetic layer in the direction of an elemental height (h).

6. 发明专利

JPH11112054A MAGNETIC SENSOR AND DEVICE USING THE SAME 失效
公开(公告)号：JPH11112054A
公开(公告)日：1999-04-23
申请号：JP26873297
申请日：1997-10-01
申请人： FUJITSU LTD
发明人： KIKUCHI HIDEYUKI , SATO MASASHIGE , KOBAYASHI KAZUO
IPC分类号： G01B7/00 , G01R33/09 , G11B5/33 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To provide a magnetic sensor having a low power consumption and high magnetoresistance change ratio and contactless encoder using the same. SOLUTION: A sensor element 11 is composed of ferroelectric tunnel junction elements having series-connected junctions 12 composed of a lower ferroelectric metal layer 13, insulation or less 14 and upper ferroelectric metal layer 15 on a substrate 6. The series connection of the high-resistance ferromagnetic tunnel junction elements raise the electric resistance of the sensor element, thereby suppressing the power consumption and reduces the applied voltage to each junction, this allowing the tunnel junction elements to operate at a high magnetoresistance change ratio and low voltage.

7. 发明专利

JPH10329888A CARRIER TAPE, METHOD OF MANUFACTURING CARRIER TAPE AND TAPING PACKAGING MEMBER 失效
公开(公告)号：JPH10329888A
公开(公告)日：1998-12-15
申请号：JP15661797
申请日：1997-06-13
申请人： FUJITSU LTD , FUJITSU TAKAMIZAWA COMPONENT
发明人： NAITO FUMINORI , ANDO YUKIO , KANAI TADASHI , KOBAYASHI KAZUO
IPC分类号： B65D73/02 , B65D85/86 , H05K13/02
摘要： PROBLEM TO BE SOLVED: To increase a strength at a pocket section without making any difficult taking-up of a carrier tape onto a reel and further prevent damage of a stored product even if the pocket is used for storing a large-sized parts by a method wherein there is provided a reinforcing section having at least a bottom part of it being made more thick than that of a connecting section. SOLUTION: A wall thickness of a tape is made different at a pocket part 11 and its connecting part 12, a wall thickness t2 of the connecting part 12 is made to be the same as that of an embossed carrier tape in order to assure a taking-up characteristic of the carrier tape onto a reel, the pocket part 11 has at least a wall thickness t1 at the bottom part 11a thicker than the wall thickness t2 of the connecting part 12 in order to reinforce it. Due to this fact, many carrier pieces provided with at least one pocket part 11 are formed by an injection molding process, and each of these carrier pieces is melted and connected in sequence at each of the connecting parts 12 so as to make a long tape. In the case of a packaging member using this carrier tape, the stored item may not be damaged by collapsing of the pocket 11 of the carrier tape even if the stored item is large in size.

8. 发明专利

JPH09231516A MAGNETIC SENSOR 失效
公开(公告)号：JPH09231516A
公开(公告)日：1997-09-05
申请号：JP3614596
申请日：1996-02-23
申请人： FUJITSU LTD
发明人： SATO MASASHIGE , TANAKA ATSUSHI , KOBAYASHI KAZUO
IPC分类号： G01R33/09 , G11B5/39
摘要： PROBLEM TO BE SOLVED: To provide a magnetic sensor which is a magnetic sensor for detecting magnetic fields and more particularly a magnetic sensor adequate for use in the magnetic reading head of a magnetic recorder and has a high resistance change rate and is strong to disturbance magnetic fields. SOLUTION: This magnetic sensor is a laminate 10 laminated with a ferromagnetic material layer 12 consisting of an FeCo alloy, an insulating layer 14 consisting of Al2 O3 and a compd. semiconductor layer 16 consisting of GaAs. This compd. semiconductor layer 16 is irradiated circularly polarized light to form polarized electrons. While the compd. semiconductor layer 16 is irradiated with the circularly polarized light, a DC voltage is impressed on the ferroelectric magnetic material layer 12 and the compd. semiconductor layer 16 by a DC power source. When the magnetization direction of the external magnetic field changes, the magnetization direction of the ferromagnetic material layer 12 changes according thereto and the magnetic reluctance between the ferromagnetic material layer 12 and the compd. semiconductor layer 16 changes. This change in the magnetic reluctance is measured by a voltmeter 22.

9. 发明专利

JPH08129722A MAGNETORESISTANCE EFFECT ELEMENT, MAGNETIC RECORDING DEVICE AND PRODUCTION OF MAGNETORESISTANCE EFFECT ELEMENT 失效
公开(公告)号：JPH08129722A
公开(公告)日：1996-05-21
申请号：JP8670295
申请日：1995-04-12
申请人： FUJITSU LTD
发明人： KISHI HITOSHI , KIKUCHI HIDEYUKI , KOBAYASHI KAZUO , KITADE YASUHIRO , ODAGIRI MITSURU
IPC分类号： G11B5/39 , G11B5/012 , G11B5/31 , H01F10/08 , H01F10/32 , H01F41/18 , H01L43/08 , H01L43/12
摘要： PURPOSE: To obtain a production method of a magnetoresistance effect element in which magnetic layers and nonmagnetic metal layers including silver films are laminated to convert changes in magnetic fields to changes in the resistivity of the element, and to obtain the production method of a magnetoresistance effect element having high heat resistance and large magnetoresistance effect. CONSTITUTION: In this production method of a magnetoresistance effect element, plural magnetic layers 3a, 3b are deposited on a substrate 1 in such a manner that the magnetic layers are alternately laminated with nonmagnetic metal layers 4, and a bias magnetic layer 5 adjacent to one magnetic layer 3b is formed to magnetize the magnetic layer 3b in a specified direction. After the thickness of the nonmagnetic metal layer 4 to be formed is determined, the nonmagnetic metal layer 4 is formed while the substrate 1 is maintained at temp. lower than the upper limit of the temp. not to produce pin holes in the nonmagnetic metal layer 4.

10. 发明专利

JPH0877519A MAGNETO-RESISTIVE TRANSDUCER 失效
公开(公告)号：JPH0877519A
公开(公告)日：1996-03-22
申请号：JP21484694
申请日：1994-09-08
申请人： FUJITSU LTD
发明人： KOBAYASHI KAZUO , KIKUCHI HIDEYUKI , KISHI HITOSHI , ODAGIRI MITSURU
IPC分类号： G11B5/39
摘要： PURPOSE: To improve sensitivity by providing the above transducer with a first ferromagnetic layer which rotate in a magnetic direction, a second ferromagnetic layer which is fixed in the magnetization direction and a third ferromagnetic layer which is magnetostatically coupled to both of the second ferromagnetic layer and a hard ferromagnetic layer. CONSTITUTION: The magnetic lines of force put into and out of the side parts of the hard ferromagnetic layer 26 and the second ferromagnetic layer 25 are mainly put into and out of the side parts of the third ferromagnetic layer 28 when there are no magnetic fields from magnetic recording media. Consequently, the direction of the magnetization M1 of the first magnetic layer 23 is nearly perpendicular to the direction of the magnetization M2 of the second ferromagnetic layer 25 in the sate that the magnetic fields of the magnetic recording media are not impressed and, therefore, the sensitivity to the magnetic fields from the magnetic recording media is improved.

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