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    • 7. 发明专利
    • Positive resist composition and pattern forming method using it
    • 使用它的积极抵抗组合物和图案形成方法
    • JP2007316515A
    • 2007-12-06
    • JP2006148209
    • 2006-05-29
    • Fujifilm Corp富士フイルム株式会社
    • MAKINO MASAOMI
    • G03F7/039C08F20/12H01L21/027
    • PROBLEM TO BE SOLVED: To provide a positive resist composition capable of giving a pattern profile of high sensitivity and high resolution, and excellent in rectangular geometry, and of which PEB temperature dependency is small, in order to solve the problem in the performance improvement technology in the microfabrication of semiconductor elements using active ray or radiation, particularly KrF excimer laser, ArF excimer laser, electron ray, or EUV ray, and a pattern forming method using it. SOLUTION: The positive resist composition contains (A) a resin having a cyclopropylethyl group which is insoluble or hardly-soluble in an alkaline developer, and is decomposed by the action of an acid increasing the dissolution rate to an alkaline developer, and (B) a compound which generates an acid by the irradiation of active ray or radiation. The pattern forming method uses the positive resist composition. COPYRIGHT: (C)2008,JPO&INPIT
    • 要解决的问题:为了提供能够提供高灵敏度和高分辨率,矩形几何形状优异且PEB温度依赖性小的正型抗蚀剂组合物,为了解决上述问题, 使用活性射线或辐射,特别是KrF准分子激光,ArF准分子激光,电子射线或EUV射线的半导体元件的微细加工中的性能改进技术以及使用它的图案形成方法。 正型抗蚀剂组合物含有(A)具有在碱性显影剂中不溶或难溶的环丙基乙基的树脂,并且通过将溶解速率提高至碱性显影剂的酸分解,以及 (B)通过活性射线或辐射的照射产生酸的化合物。 图案形成方法使用正性抗蚀剂组合物。 版权所有(C)2008,JPO&INPIT
    • 8. 发明专利
    • Positive resist composition and pattern forming method using the same
    • 正极性组合物和使用其的图案形成方法
    • JP2007256639A
    • 2007-10-04
    • JP2006081053
    • 2006-03-23
    • Fujifilm Corp富士フイルム株式会社
    • MIZUTANI KAZUYOSHIMAKINO MASAOMI
    • G03F7/039C08F12/22H01L21/027
    • PROBLEM TO BE SOLVED: To solve problems in techniques to improve performances in microprocessing of semiconductor elements using active rays or radiation, particularly, KrF excimer laser light, electron beams or EUV light, and to provide a positive resist composition having high sensitivity, reduced roughness and pattern density dependence and showing excellent sensitivity and dissolution contrast even in exposure to EUV light, and to provide a pattern forming method using the composition. SOLUTION: The resist composition comprises a resin having a styrene repeating unit having a specified aromatic ring-containing substituent, and a compound which generates an acid by irradiation with active rays or radiation. The pattern forming method is carried out by using the above composition. COPYRIGHT: (C)2008,JPO&INPIT
    • 解决的问题:为了解决使用活性射线或辐射,特别是KrF准分子激光,电子束或EUV光提高半导体元件的微处理性能的技术中的问题,并提供具有高灵敏度的正性抗蚀剂组合物 ,降低粗糙度和图案密度依赖性,并且即使在暴露于EUV光下也显示出优异的灵敏度和溶解对比度,并且提供使用该组合物的图案形成方法。 解决方案:抗蚀剂组合物包含具有特定的含芳环取代基的苯乙烯重复单元的树脂和通过用活性射线或辐射照射产生酸的化合物。 图案形成方法通过使用上述组成进行。 版权所有(C)2008,JPO&INPIT
    • 10. 发明专利
    • Photosensitive composition, pattern forming material, and photosensitive film, pattern forming method, patterned film, low refractive index film, optical device, and solid-state image sensing device using the same
    • 光敏组合物,图案形成材料和感光膜,图案形成方法,图案薄膜,低折射指数膜,光学装置和使用其的固态图像感测装置
    • JP2012159689A
    • 2012-08-23
    • JP2011019328
    • 2011-01-31
    • Fujifilm Corp富士フイルム株式会社
    • MAKINO MASAOMISAIE TOSHIYUKIWADA KENJI
    • G03F7/038C08F220/34G02B1/11G02B5/26G02B5/28G03F7/004
    • PROBLEM TO BE SOLVED: To provide a photosensitive composition and a pattern forming material capable of forming a pattern having high appropriate sensitivity, a low refractive index, little pattern chipping or residue after development, and little change in the refractive index under a high temperature and high humidity, and an excellent weather resistance property, and to provide a photosensitive film, a pattern forming method, a patterned film, a low refractive index film, an optical device, and a solid-state image sensing device using the same.SOLUTION: A photosensitive composition and a pattern forming material containing (A) hollow or porous particles, (B) a compound adapted to generate an active species by irradiation of active rays or radiation, and (C) a resin containing at least one selected from partial structures shown by the following Group A and a carboxylic acid group and whose solubility in a developer is changed by an action of the active species, and a photosensitive film, a pattern forming method, a patterned film, a low refractive index film, an optical device, and a solid-state image sensing device using the same are provided, where Group A includes a hydroxyl group, an amino group, an amide group, an urea bond, an ester bond, a sulfonate group, a phosphate group, a phosphonate group, a polyethylene glycol chain, and a polypropylene glycol chain.
    • 要解决的问题:为了提供能够形成具有高适当灵敏度,低折射率,小图案切片或显影后残留物的图案的光敏组合物和图案形成材料,并且在下述条件下的折射率几乎没有变化 高温高湿度,耐候性优异,并且提供感光膜,图案形成方法,图案化膜,低折射率膜,光学器件和使用该感光膜的固体摄像装置 。 解决方案:一种感光组合物和含有(A)中空或多孔颗粒的图案形成材料,(B)适于通过照射活性射线或辐射产生活性物质的化合物,和(C)至少含有 选自以下A组所示的部分结构和羧酸基,其在显影剂中的溶解度通过活性种的作用而变化的光敏膜,图案形成方法,图案化膜,低折射率 提供了一种使用它们的薄膜,光学装置和固体摄像装置,其中A组包括羟基,氨基,酰胺基,脲键,酯键,磺酸酯基,磷酸酯 基团,膦酸酯基,聚乙二醇链和聚丙二醇链。 版权所有(C)2012,JPO&INPIT