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1. 发明专利

JP2008071814A Semiconductor device, and its fabrication process 审中-公开
标题翻译：半导体器件及其制造工艺
公开(公告)号：JP2008071814A
公开(公告)日：2008-03-27
申请号：JP2006246989
申请日：2006-09-12
申请人： Fujitsu Ltd , 富士通株式会社
发明人： IKEDA KEIJI
IPC分类号： H01L21/8238 , H01L21/28 , H01L27/08 , H01L27/092 , H01L29/423 , H01L29/49 , H01L29/78 , H01L29/786
CPC分类号： H01L21/823814 , H01L21/28255 , H01L21/823835 , H01L21/823842 , H01L29/1083 , H01L29/16 , H01L29/45 , H01L29/665 , H01L29/7835
摘要： PROBLEM TO BE SOLVED: To achieve high speed operation by using Ge or SiGe as a semiconductor material composing a channel, and to achieve a CMOSFET which can attain desired threshold control and high effective mobility characteristics by a simple low temperature fabrication process. SOLUTION: In an nMOSFET 10, a gate electrode 13 is formed of a silicide layer composed of NiSi. On the opposite sides of the gate electrode 13, an NiGe layer 15 which is a Germanide layer composed of NiGe is formed on the surface layer of a Ge substrate 2. A first layer 16 is formed by segregating specific atoms with high concentration on the junction interface of the NiGe layer 15 and the Ge substrate 2, and a second layer 17 is formed by segregating the same atoms as those of the first layer 16 with high concentration on the interface of the gate electrode 13 and a gate insulating film 12. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：通过使用Ge或SiGe作为组成沟道的半导体材料实现高速操作，并且通过简单的低温制造工艺实现可获得期望的阈值控制和高有效迁移率特性的CMOSFET。解决方案：在nMOSFET 10中，栅电极13由由NiSi组成的硅化物层形成。在栅电极13的相对侧，在Ge衬底2的表面层上形成作为由NiGe构成的德语掩模层的NiGe层15.第一层16是通过在结合点上高浓度地分离特定原子而形成的 NiGe层15和Ge基板2的界面，第二层17通过在栅电极13和栅极绝缘膜12的界面上与第一层16的原子高度分离而形成。 P>版权所有（C）2008，JPO＆INPIT

2. 发明专利

JP2003264290A SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD 审中-公开
公开(公告)号：JP2003264290A
公开(公告)日：2003-09-19
申请号：JP2002063370
申请日：2002-03-08
申请人： FUJITSU LTD
发明人： MIMURA TAKASHI , IKEDA KEIJI
IPC分类号： H01L21/336 , H01L29/45 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device which can achieve an improvement in further carrier nobility by suppressing a short channel effect, and to provide a method for manufacturing the same. SOLUTION: The semiconductor device comprises a semiconductor layer 18 formed on an insulating layer 16, a gate electrode 22 formed on the semiconductor layer via a gate insulating film 20, a source/drain region 24 formed at the semiconductor layers of both sides of the gate electrode, and a semiconductor region 14 embedded in the layer 16 of the lower region of the gate electrode. COPYRIGHT: (C)2003,JPO

3. 发明专利

JPH07320618A MANUFACTURE OF ELECTROMAGNETIC RELAY 失效
公开(公告)号：JPH07320618A
公开(公告)日：1995-12-08
申请号：JP10934894
申请日：1994-05-24
申请人： FUJITSU LTD
发明人： NAKAMURA AKIO , IKEDA KEIJI
IPC分类号： H01H49/00 , H01H50/00 , H01H50/14
摘要： PURPOSE:To suppress the characteristic changes due to the heat at the time of mounting to the minimum by carrying out heat treatment for half-finished products before adjustment check to adjust the spring pressure between contact points at the time of assembling an electromagnetic relay. CONSTITUTION:In assembly process of an electromagnetic relay, before adjustment check to adjust the spring pressure between contact points, heat treatment is carried out for a half-finished electromagnetic relay. In the heat treatment process, heating is carried out at the temperature higher than the highest temperature which a contact point spring can reach at the time when an electromagnetic realy is mounted on the surface of a board and lower than the allowable temperature of heat resistance of materials composing the electromagnetic relay. Heat treatment is carried out at, for example, 230-250 deg.C. Consequently, an electromagnetic relay in which a spring load after mounted never comes out of a range between an excited value curve and an open value curve is obtained.

4. 发明专利

JPH05190071A LOW OPERATING SOUND ELECTROMAGNETIC RELAY 失效
公开(公告)号：JPH05190071A
公开(公告)日：1993-07-30
申请号：JP537192
申请日：1992-01-16
申请人： FUJITSU LTD
发明人： IKEDA KEIJI , UCHINO HIROYUKI , OKAMOTO YOSHIO , MIURA TAKASHI
IPC分类号： H01H50/30
摘要： PURPOSE:To reduce a sound generated at the time of return action by engaging a dome-shaped elastic body having hysteresis between a transfer distance and a load with an armature or a movable contact spring. CONSTITUTION:An armature 4 provided opposite to an end face of an iron core 13 is fixed to the tip of the iron core 13 in free swing through a movable contact spring 5. A dome-shaped elastic body 3 consisting, for instance, of rubber and having hysteresis between a transfer distance and a load is mounted on the tip of this armature 4 for being impressed with a spring load once increased and later again reducing immediately before the movable contact 51 abuts on a fixed contact 52 or 53. Accordingly, a sound caused by a collision of the contact 51 with the contact 52 is reduced while being slowed down by an action of the elastic body 3 immediately before the contact 51 abuts on the contact 52. Further, when the contact 51 abuts on the contact 52, the speed of the armature 4 is further reduced by resiliency of a fixed contact spring 54. The armature 4 is already slowed down before the contact 51 abuts on the contact 52 so as to reduce the sound when the armature 4 collides with the iron core 13.

5. 发明专利

JPH01236471A MAGNETIC CARD READER/WRITER 失效
公开(公告)号：JPH01236471A
公开(公告)日：1989-09-21
申请号：JP6293288
申请日：1988-03-16
申请人： FUJITSU LTD
发明人： IKEDA KEIJI , TANJI SHIGEO , OKUKI MASARU
IPC分类号： G11B20/14
摘要： PURPOSE:To realize a compact magnetic card reader/writer by applying a reference clock having a frequency twice as high as that of a write signal to a clock terminal of a D type flip-flop and applying the write signal to a data terminal of said flip-flop respectively. CONSTITUTION:A reference clock having a frequency twice as high as that of a write signal is applied to a clock terminal CK of a D type flip-flop 10. While the write signal is applied to a data terminal D of the flip-flop 10 respectively. Therefore the output of a terminal Q of the flip-flop 10 is decided according to the H or L level of the terminal D set at the rise edge of the clock 11. The output of the inverse of a terminal Q is obtained by inverting the output of the terminal Q and these outputs are applied to a magnetic head 1 and written on a magnetic card. In such constitution, an arithmetic circuit, an edge detecting circuit, etc., can be omitted. Thus the number of circuits set on a printed base board are decreased and therefore a compact card reader/writer is obtained at a low cost.

6. 发明专利

JPS6377366A VOICE COIL TYPE LINEAR MOTOR 失效
公开(公告)号：JPS6377366A
公开(公告)日：1988-04-07
申请号：JP22234986
申请日：1986-09-19
申请人： FUJITSU LTD
发明人： IKEDA KEIJI , KAMIYA YOSHIAKI
IPC分类号： H02K33/18
摘要： PURPOSE:To mount an image sensing element on the side of a coil bobbin, and to attain stable drive by installing a pair of permanent magnets holding a core and a guide shaft for sliding the coil bobbin and fixing a base plate, on which the image sensing element, etc., are loaded, to the coil bobbin. CONSTITUTION:When predetermined currents are caused to flow through a coil 50 for a linear motor 5, a bobbin 51 is guided by a guide shaft 54 and moved to the right or the left between the opposed sections of a pair of permanent magnets 57, and a base plate 52 is shifted together with the bobbin 51. An image sensing drive has the linear motor 5, a linear encoder 6, a drive circuit 7 and an image sensing element 4 fitted to an arm 59 backward projected from the base plate 52. The linear encoder 6 consists of a scale 61 and a position-signal generating section 62 set up in front of the base plate 52, and a signal corresponding to the travel of the base plate 52 is outputted from the signal generating section 62. When the output signal is fed back to the drive circuit 7, the linear motor 5 driven by closed-loop control is transferred at uniform velocity, and the image sensing element 4 can be moved at a uniform rate.

7. 发明专利

JPS62219108A IMAGE PICKUP ELEMENT DRIVING DEVICE 失效
公开(公告)号：JPS62219108A
公开(公告)日：1987-09-26
申请号：JP6294786
申请日：1986-03-20
申请人： FUJITSU LTD
发明人： SAKAHARA HIROSHIGE , SAKURAI SATOSHI , SHIMIZU YORIAKI , IKEDA KEIJI
IPC分类号： G05D13/62 , H04N1/10 , H04N1/107
摘要： PURPOSE:To execute the high accuracy of a shifting speed by shifting an image pickup element with a closed loop control by a linear servomotor and a linear encoder. CONSTITUTION:The device is provided with a linear servomotor 7 where a moving part 71 reciprocates and a linear encoder 8 to output the position information of the moving part 71, and a position information signal outputted from a linear encoder 8 accompanying the shifting of the moving part 71 is fed back to a driving circuit 9 of the linear servomotor 7 as a control signal, and at the moving part 71 driven by the closed loop control and shifted at an equal speed, an image pickup element 3 is mounted. By executing the closed loop control and shifting the moving part at the equal speed by the linear servomotor 7 and the linear encoder 8, the influence of the play in a power communicating system is removed, and even when the load is changed, the image pickup element 3 can be shifted at the equal speed.

8. 发明专利

JPS62141957A LINEAR PULSE MOTOR 失效
公开(公告)号：JPS62141957A
公开(公告)日：1987-06-25
申请号：JP28032985
申请日：1985-12-13
申请人： FUJITSU LTD
发明人： IKEDA KEIJI , KAMIYA YOSHIAKI , YOSHIKAWA MITSUAKI
IPC分类号： H02K41/03
摘要： PURPOSE:To engaging a movable element with a stator without using an electric power by providing a hook pin which can project and retract at the element. CONSTITUTION:A movable element 13 having a movable yoke moves along a stator 12 having a stationary yoke. A hook pin 14 which can project toward the stator 12 and retract under the external control is provided at the element 13. The pin 14 is movably controlled by a solenoid coil provided at the element 13. Engaging means 15 for engaging the end of the pin 14 is provided at the stator 12. The means 15 is composed of a rubber elastic material with which the end of the pin 14 can be pressed in contact.

9. 发明专利

JP2007103897A Field effect transistor and manufacturing method thereof 有权
标题翻译：场效应晶体管及其制造方法
公开(公告)号：JP2007103897A
公开(公告)日：2007-04-19
申请号：JP2006032652
申请日：2006-02-09
申请人： Fujitsu Ltd , 富士通株式会社
发明人： IKEDA KEIJI
IPC分类号： H01L21/8238 , H01L21/28 , H01L21/336 , H01L27/08 , H01L27/092 , H01L29/78 , H01L29/786
CPC分类号： H01L29/7839 , H01L21/2254 , H01L21/28518 , H01L21/823807 , H01L21/823814 , H01L27/1203 , H01L29/16 , H01L29/47 , H01L29/66477 , H01L29/665 , H01L29/66643 , H01L29/7843 , H01L29/7848 , H01L29/78684 , Y10S438/933 , Y10S438/938
摘要： PROBLEM TO BE SOLVED: To speed up a complementary field effect transistor. SOLUTION: Both an nMOSFET10 and pMOSFET20 comprise a Ge channel, with a source-drain region of them formed of NiGe layers 15 and 25. A Schottky barrier formed by the source-drain junction of the nMOSFET10 is modulated by an ultrathin segregation layer 16 in which atoms such as As, Sb, and S are segregated when forming the NiGe layer 15. Thus, the height of Schottky barrier appropriate for the nMOSFET10 and pMOSFET20 is realized for a high speed CMOSFET1. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：加速互补场效应晶体管。解决方案：nMOSFET10和pMOSFET20均包括Ge沟道，其沟道源极 - 源极 - 漏极区域由NiGe层15和25形成。由nMOSFET10的源极 - 漏极结形成的肖特基势垒被超薄偏析调制当形成NiGe层15时，其中诸如As，Sb和S的原子分离的层16.因此，对于高速CMOSFET1实现了适用于nMOSFET10和pMOSFET20的肖特基势垒的高度。版权所有（C）2007，JPO＆INPIT

10. 发明专利

JP2004140262A Semiconductor device and manufacturing method thereof 审中-公开
公开(公告)号：JP2004140262A
公开(公告)日：2004-05-13
申请号：JP2002305029
申请日：2002-10-18
申请人： Fujitsu Ltd , 富士通株式会社
发明人： IKEDA KEIJI , YAMASHITA YOSHIMI
IPC分类号： H01L29/417 , H01L21/336 , H01L29/78 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device and a manufacturing method thereof in which a Schottky source/drain MOSFET is effectively microfabricated.
SOLUTION: After a sidewall 5 is formed, two layers of metal films 6 and 7 are sequentially deposited overall. When forming a p-type transistor as the metal film 6 of the lower layer, a Pt film is formed, for example, and when forming an n-type transistor, an Er film is formed, for example. As the metal film 7 of the upper layer, an Ni film, a Co film or a Ti film is formed, for example. Continuously, heat treatment is performed for about 30 minutes at 400°C, for example, to make react the metal films 6 and 7 and a semiconductor wafer 1. A chemical compound film 8 is composed of ErSi, PtSi and TiSi or NiSi films, for example, and a chemical compound film 9 is composed of NiSi and CoSi or TiSi films, for example. Because of presence of the chemical compound film 9, contact resistances between the chemical compound film 8 and a source wiring 10S, and between the film 8 and a dram wiring 10D are lowered farther than conventional contact resistances.
COPYRIGHT: (C)2004,JPO

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