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1. 发明专利

JP2009158784A Formation method of insulation film 有权
标题翻译：绝缘膜形成方法
公开(公告)号：JP2009158784A
公开(公告)日：2009-07-16
申请号：JP2007336733
申请日：2007-12-27
申请人： Canon Anelva Corp , Canon Inc , キヤノンアネルバ株式会社 , キヤノン株式会社
发明人： FUKUCHI YUSUKE , KITAGAWA HIDEO , KITANO NAOTAKE
IPC分类号： H01L21/316 , C23C14/14
摘要： PROBLEM TO BE SOLVED: To form a high-permittivity insulation film suitable for use as a high-permittivity gate insulation film, and having improved controllability and productivity.
SOLUTION: A formation method of an insulation film has: a first process for oxidizing the surface layer section of a silicon substrate 101 as a silicon oxide film 102; a second process for forming a metal film 103 on the silicon oxide film 102 under a non-oxidizing atmosphere; a third process for diffusing a metal atom for composing the metal film 103 into the silicon oxide film 102 by exposing the metal film 103 to rare gas plasma under a non-oxidizing atmosphere; and a fourth process for forming a metal silicate film 104 by oxidizing the silicon oxide film 102 where the metal atom is diffused by radical oxidation. The rare gas plasma includes rare gases having an amount of atom closest to that of the metal atom for composing the metal film 103.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：形成适合用作高介电性栅极绝缘膜的高介电常数绝缘膜，并且具有改进的可控性和生产率。解决方案：绝缘膜的形成方法具有：将作为氧化硅膜102的硅衬底101的表层部分氧化的第一工序; 在非氧化性气氛下在氧化硅膜102上形成金属膜103的第二工序; 通过在非氧化气氛下将金属膜103暴露于稀有气体等离子体，将用于构成金属膜103的金属原子扩散到氧化硅膜102中的第三种方法; 以及通过氧化氧化硅膜102而形成金属硅酸盐膜104的第四种方法，其中金属原子通过自由基氧化而扩散。稀有气体等离子体包括具有与用于构成金属膜103的金属原子最接近的原子量的稀有气体。版权所有（C）2009，JPO＆INPIT

2. 发明专利

JP2009158782A Formation method for insulating film 有权
标题翻译：绝缘膜形成方法
公开(公告)号：JP2009158782A
公开(公告)日：2009-07-16
申请号：JP2007336730
申请日：2007-12-27
申请人： Canon Anelva Corp , Canon Inc , キヤノンアネルバ株式会社 , キヤノン株式会社
发明人： KITAGAWA HIDEO , KITANO NAOTAKE
IPC分类号： H01L21/318 , H01L21/316 , H01L29/78
CPC分类号： H01L21/28202 , H01L21/28185 , H01L21/28229 , H01L21/3145 , H01L21/31645 , H01L29/513 , H01L29/517 , H01L29/518
摘要： PROBLEM TO BE SOLVED: To provide a method for forming an insulating film for easily controlling the diffusion of metal such as Hf, and for forming an insulating film having required film thickness with excellent productivity.
SOLUTION: This method for forming an insulating film includes: a first step of oxidizing the surface layer portion of a silicon substrate 101 and forming a silicon oxide film 102; a second step of irradiating ion 103 on the surface of the silicon oxide film 102 and making the surface layer portion of the silicon oxide film into a reaction-accelerating layer 104 with Si-O bond cut; a third step of laminating a metal film 105 on the reaction-accelerating layer 104 in a non-oxidizing atmosphere by spatter and making the reaction-accelerating layer 104 into a metallic silicate film 106; and a fourth step of oxidizing the metal film 105 by radical oxidization and diffusing metal from the metal film 105 to the silicon oxide film 102 and forming a metal silicate film 107; and a fifth step of nitriding the metal silicate film 107 by radical nitrization. The incident energy of ion is equal to or more than 2 eV and less than 20 eV.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于形成绝缘膜的方法，用于容易地控制诸如Hf的金属的扩散，并且用于以优异的生产率形成具有所需膜厚的绝缘膜。解决方案：用于形成绝缘膜的方法包括：氧化硅衬底101的表面层部分并形成氧化硅膜102的第一步骤; 在氧化硅膜102的表面上照射离子103并使氧化硅膜的表层部分成为Si-O键断层的反应加速层104的第二工序; 在非氧化气氛中通过飞溅层叠金属膜105在反应加速层104上并使反应促进层104成为金属硅酸盐膜106的第三步骤; 以及通过使金属膜105自由基氧化并将金属从金属膜105扩散到氧化硅膜102并形成金属硅酸盐膜107而氧化金属膜105的第四步骤; 以及通过自由基氮化氮化金属硅酸盐膜107的第五步骤。离子的入射能量等于或大于2eV且小于20eV。版权所有（C）2009，JPO＆INPIT

3. 发明专利

JP2008059991A Plasma processing apparatus and plasma processing method 审中-公开
标题翻译：等离子体加工设备和等离子体处理方法
公开(公告)号：JP2008059991A
公开(公告)日：2008-03-13
申请号：JP2006237805
申请日：2006-09-01
申请人： Canon Inc , キヤノン株式会社
发明人： SUZUKI NOBUMASA , KITAGAWA HIDEO
IPC分类号： H05H1/46 , C23C16/511 , H01L21/205 , H01L21/304 , H01L21/3065
CPC分类号： H01J37/3222 , H01J37/32192
摘要： PROBLEM TO BE SOLVED: To provide a plasma processing apparatus capable of achieving uniformity of surface wave electric field intensity at a high level by adjusting a radial distribution by intensifying the surface wave electric field intensity in a circumferential part and a central part of a waveguide; and to provide a plasma processing method. SOLUTION: In this plasma processing apparatus (plasma processing method), a plasma processing chamber 101 is evacuated into a vacuum state, a processing gas is introduced therein, thereafter plasma is generated by introducing microwaves into the plasma processing chamber 101 to process a substrate to be processed 102. The distance Ls between the centerline of the inner arc-shaped slot 114a of a slotted endless annular waveguide (waveguide tube) 108 and that of an outer arc-shaped slot 114b is set to be an even multiple of a half wavelength of a microwave surface wave propagating along a surface of a dielectric window 107. A distance Le between the centerline of the outer arc-shaped slot 114b and an outer periphery of the dielectric window 107 is set to be an odd multiple of the half wavelength of the microwave surface wave. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：解决的问题：提供一种等离子体处理装置，其能够通过在周向部分和中心部分强化表面波电场强度来调节径向分布，从而实现高水平的表面波电场强度的均匀性波导; 并提供等离子体处理方法。解决方案：在该等离子体处理装置（等离子体处理方法）中，将等离子体处理室101抽真空至其中，将处理气体引入其中，然后通过将微波引入等离子体处理室101来进行等离子体处理待加工的基板102.开槽的环形波导（波导管）108的内弧形槽114a的中心线与外弧形槽114b的中心线之间的距离Ls设定为微波表面波的一半波长沿着电介质窗107的表面传播。外弧形槽114b的中心线与电介质窗107的外周之间的距离Le设定为微波表面波的一半波长。版权所有（C）2008，JPO＆INPIT

4. 发明专利

JP2006024764A Measuring method of intensity distribution of plasma emission, and plasma processor 审中-公开
标题翻译：等离子体排放强度分布的测量方法和等离子体处理器
公开(公告)号：JP2006024764A
公开(公告)日：2006-01-26
申请号：JP2004201844
申请日：2004-07-08
申请人： Canon Inc , キヤノン株式会社
发明人： KITAGAWA HIDEO
IPC分类号： H01L21/3065 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To improve the defects that, in the measuring method performed from the side surface of a vacuum container, the information relative to the intensity distribution of a plasma emission can not be obtained by any simple method, and to obtain the information forcibly, a plurality of sensors and complex computations necessary to require an expensive plasma processor.
SOLUTION: A processor has a vacuum container having a transparent dielectric window and a pressure regulating means and has slot antennas, and a plasma emission is so generated in the vacuum container by the high-frequency radiation performed from the slot antennas into the vacuum container via the transparent dielectric window as to perform processings. A plasma emission is so derived by inserting a light deriving means into the space between the dielectric window and the slot antennas as to measure the intra-surface intensity distribution of the plasma emission.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题为了改善在从真空容器的侧面进行的测量方法中，通过任何简单的方法不能获得关于等离子体发射的强度分布的信息的缺点，并且获取强制信息，多个传感器和需要昂贵的等离子体处理器所需的复杂计算。解决方案：处理器具有具有透明电介质窗口和压力调节装置并具有缝隙天线的真空容器，并且通过从缝隙天线执行的高频辐射在真空容器中产生等离子体发射通过透明电介质窗口进行真空容器进行处理。通过将光导出装置插入电介质窗和缝隙天线之间的空间来测量等离子体发射的表面内强度分布，从而导出等离子体发射。版权所有（C）2006，JPO＆NCIPI

5. 发明专利

JP2008192919A Nitriding method of silicone oxide film 审中-公开
标题翻译：硅氧烷膜的氮化方法
公开(公告)号：JP2008192919A
公开(公告)日：2008-08-21
申请号：JP2007027045
申请日：2007-02-06
申请人： Canon Inc , キヤノン株式会社
发明人： KITAGAWA HIDEO
IPC分类号： H01L21/318 , H01L21/336 , H01L29/78
摘要： PROBLEM TO BE SOLVED: To introduce nitrogen with higher concentration, even if it is a thin SiO
2 film of the film thickness 1.2 nm or less, while suppressing a film increase.
SOLUTION: In a method to nitride the silicon oxide film by introducing nitride into the silicon oxide film formed in the surface of a substrate, a process to irradiate nitride ion with an angle of 50° or more to the normal line of a processed film, and a process to irradiate nitrogen atom more than the amount of the ion irradiation are simultaneously or alternately performed.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：为了引入浓度较高的氮，即使是薄膜厚度为1.2nm以下的薄SiO 2 SB薄膜，同时抑制膜增加。解决方案：在通过将氮化物引入形成在基板的表面中的氧化硅膜中来对氧化硅膜进行氮化的方法中，将以50°以上的角度照射氮化物离子的方法，同时或交替地进行比离子照射量多的氮原子的照射过程。版权所有（C）2008，JPO＆INPIT

6. 发明专利

JP2007324185A Plasma processing method 审中-公开
标题翻译：等离子体处理方法
公开(公告)号：JP2007324185A
公开(公告)日：2007-12-13
申请号：JP2006149751
申请日：2006-05-30
申请人： Canon Inc , キヤノン株式会社
发明人： KITAGAWA HIDEO
IPC分类号： H01L21/318 , H01L21/265
CPC分类号： H01L21/3144 , H01J37/32192 , H01L21/31155
摘要： PROBLEM TO BE SOLVED: To provide a plasma processing method for introducing a substance that is different from a substrate on the front surface of the same substrate in higher concentration without increase in thickness of the substrate to the same sustrate (thin film substrate).
SOLUTION: The plasma processing method for introducing a substance different from a substrate to the front surface of the same substrate using plasma includes the steps of irradiating the plasma to the substrate, under the condition that the time for maintaining the introduced substance different from the substrate undiffused within the substrate is defined as the irradiation time; and non-irradiating the plasma to the substrate under the condition that the time is defined as the non-irradiation time until the ions included in the plasma are perfectly disappeared, and surface temperature and internal temperature of the substrate are equalized. This plasma processing method repeats such irradiation step and non-irradiation step.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种等离子体处理方法，用于在不增加基板的厚度的情况下，以较高的浓度将相对于基板的不同于基板的物质以更高的浓度引入（薄膜基板）。解决方案：使用等离子体将与基板不同的物质引入同一基板的前表面的等离子体处理方法包括以下步骤：在保持导入物质的时间不同的条件下将等离子体照射到基板从衬底中不扩散的衬底定义为照射时间; 并且在将时间定义为非照射时间直到等离子体中包含的离子完全消失，并且使基板的表面温度和内部温度相等的条件下，将等离子体照射到基板上。该等离子体处理方法重复这样的照射步骤和非照射步骤。版权所有（C）2008，JPO＆INPIT

7. 发明专利

JP2006041250A Plasma processing device and method therefor 审中-公开
标题翻译：等离子体处理装置及其方法
公开(公告)号：JP2006041250A
公开(公告)日：2006-02-09
申请号：JP2004220210
申请日：2004-07-28
申请人： Canon Inc , キヤノン株式会社
发明人： UCHIYAMA SHINZO , SUZUKI NOBUMASA , KITAGAWA HIDEO , FUKUCHI YUSUKE
IPC分类号： H01L21/31 , H01L21/318
CPC分类号： H01L21/28185 , H01J37/32192 , H01J37/32449 , H01J37/32623 , H01J37/32733 , H01L21/28202 , H01L29/518
摘要： PROBLEM TO BE SOLVED: To inject ions in a plasma uniformly on the entire surface of a processing substrate, in a short time period. SOLUTION: When the processing substrate 2 is processed with the plasma in a reaction vessel 1, a gas pressure in the reaction vessel 1 is increased. An operation is performed such that the distance of a plasma generator and the processing substrate is kept separated, the processing substrate is temporarily placed outside a reaction chamber, or a shutter is disposed in between the plasma generator and the processing substrate, whereby an entrance of ions in the plasma into the processing substrate is substantially intercepted in a given time period, when generation of plasma is started. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：在短时间内将等离子体中的离子均匀地注入到处理基板的整个表面上。解决方案：当处理基板2在反应容器1中用等离子体处理时，反应容器1中的气体压力增加。执行操作，使得等离子体发生器和处理基板的距离保持分离，处理基板暂时放置在反应室外，或者快门设置在等离子体发生器和处理基板之间，由此进入当等离子体的产生开始时，等离子体中进入处理衬底的离子在给定的时间段内被基本截获。版权所有（C）2006，JPO＆NCIPI

8. 发明专利

JP2010141108A Temperature control stage 审中-公开
标题翻译：温度控制阶段
公开(公告)号：JP2010141108A
公开(公告)日：2010-06-24
申请号：JP2008315691
申请日：2008-12-11
申请人： Canon Inc , キヤノン株式会社
发明人： KITAGAWA HIDEO , UEHARA MASAMICHI
IPC分类号： H01L21/31
摘要： PROBLEM TO BE SOLVED: To provide a method of shortening an adjustment time when stage temperature within a vacuum chamber is adjusted.
SOLUTION: High-boiling-point oil is filled in a space 4 within a stage and replaced with oil of suitable temperature and the same quality when the temperature is raised or lowered to improve response. When the stage 1 is cooled, inside cycloparaffin having been heated is discharged from "A" and oil subjected to room-temperature control is injected from B. Consequently, a heated electric heater 2 is rapidly cooled. Further, the oil replacement is performed several times to achieve more rapid temperature control. Further, the replacement is continuously performed to obtain higher cooling effect.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种在真空室内的阶段温度被调节时缩短调整时间的方法。解决方案：将高沸点油填充在阶段中的空间4中，并且当温度升高或降低以改善响应时，用适当温度的油替代相同的质量。当阶段1被冷却时，已经加热的环状石蜡从“A”排出，并且从B注入经过室温控制的油。因此，加热的电加热器2被快速冷却。此外，进行多次油更换以实现更快速的温度控制。此外，连续进行更换以获得更高的冷却效果。版权所有（C）2010，JPO＆INPIT

9. 发明专利

JP2008288348A Plasma processor and plasma processing method 审中-公开
标题翻译：等离子体处理器和等离子体处理方法
公开(公告)号：JP2008288348A
公开(公告)日：2008-11-27
申请号：JP2007131088
申请日：2007-05-16
申请人： Canon Inc , キヤノン株式会社
发明人： KITAGAWA HIDEO , FUKUCHI YUSUKE
IPC分类号： H01L21/31 , H01L21/283 , H01L21/316 , H01L21/318 , H01L21/768 , H01L29/78
CPC分类号： H01J37/321 , H01J37/32192 , H01L21/3105
摘要： PROBLEM TO BE SOLVED: To provide a plasma processor and a plasma processing method, wherein Na generation is reduced when quartz glass, etc., are used as a dielectric component.
SOLUTION: The plasma processor has: the dielectric component containing an impurity element which becomes a positive ion and a movable ion; a vacuum container partially sealed by use of the dielectric component; a means for leading a gas into the vacuum container to adjust an internal pressure of the vacuum container; a means for radiating an electromagnetic wave into the vacuum container via the dielectric component; and a means for holding a processing body. The plasma processor generates a plasma in the vacuum container and processes the processing body by use of the plasma. An electrode is arranged on the opposite side of a face coming into contact with the plasma of the dielectric component, and a more negative DC potential than a floating potential of the face where the dielectric component comes into contact with the plasma is applied to the electrode, thereby reducing the generation of Na.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种等离子体处理器和等离子体处理方法，其中使用石英玻璃等作为电介质成分时，Na生成减少。解决方案：等离子体处理器具有：包含成为正离子的杂质元素和可移动离子的电介质成分; 通过使用电介质部件部分密封的真空容器; 用于将气体引导到真空容器中以调节真空容器的内部压力的装置; 用于经由电介质部件将电磁波辐射到真空容器中的装置; 以及用于保持加工体的装置。等离子体处理器在真空容器中产生等离子体，并通过使用等离子体处理该处理体。电极布置在与介电部件的等离子体接触的面的相对侧上，并且比电介质成分与等离子体接触的面的浮动电位更负的直流电位被施加到电极，从而减少Na的产生。版权所有（C）2009，JPO＆INPIT

10. 发明专利

JP2006019366A Method for forming insulating film in semiconductor device 审中-公开
标题翻译：在半导体器件中形成绝缘膜的方法
公开(公告)号：JP2006019366A
公开(公告)日：2006-01-19
申请号：JP2004193407
申请日：2004-06-30
申请人： Canon Inc , キヤノン株式会社
发明人： FUKUCHI YUSUKE , KITAGAWA HIDEO
IPC分类号： H01L21/316 , H01L21/822 , H01L27/04 , H01L29/78
摘要： PROBLEM TO BE SOLVED: To form a reliable gate insulating film by introducing high-concentration nitrogen only near the surface of a silicon oxide film without segregating nitrogen near the interface of a silicon substrate in the nitriding treatment of the silicon oxide film using a plasma nitriding method.
SOLUTION: A method for forming an insulating film comprises a process for irradiating a substrate surface having a silicon oxide thin film on a semiconductor substrate with vacuum ultraviolet rays in a vacuum container retained in high vacuum; and a process for performing either nitriding or oxynitriding treatment in the vacuum container retained in a high vacuum state without exposing the substrate to the atmosphere after the irradiation of vacuum ultraviolet rays.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了通过在氧化硅膜的表面附近引入高浓度氮而在氧化硅膜的氮化处理中在硅衬底的界面附近不分离氮而形成可靠的栅极绝缘膜，使用等离子体氮化方法。解决方案：一种用于形成绝缘膜的方法包括：在真空容器中保持高真空度的情况下，在半导体衬底上用真空紫外线照射具有氧化硅薄膜的衬底表面的工艺; 以及在保持高真空状态的真空容器中进行氮化或氮氧化处理而不在真空紫外线照射之后将基板暴露于大气中的方法。版权所有（C）2006，JPO＆NCIPI

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