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1. 发明专利

JP2009177161A Method for forming insulation film 审中-公开
标题翻译：形成绝缘膜的方法
公开(公告)号：JP2009177161A
公开(公告)日：2009-08-06
申请号：JP2008327944
申请日：2008-12-24
申请人： Canon Anelva Corp , Canon Inc , キヤノンアネルバ株式会社 , キヤノン株式会社
发明人： FUKUCHI YUSUKE , KITANO NAOTAKE
IPC分类号： H01L21/318 , C23C14/58 , H01L21/768 , H01L23/522 , H01L29/78
CPC分类号： H01L21/3145 , H01L21/31641 , H01L21/31645
摘要： PROBLEM TO BE SOLVED: To form an insulation film suitable for use as a high-dielectric-constant gate insulation film and including a high-dielectric-constant metal nitride silicate film.
SOLUTION: A method for forming insulation films includes: a first process for depositing a film 102 containing metal and silicon on a silicon substrate 101 using a sputtering method in an atmosphere that it is difficult for metal atoms and silicon atoms to have an oxidization reaction, a second process for forming a film 103 containing nitrogen, metal and silicon by nitriding the film 102 using nitrogen plasma, and a third process for forming a metal nitride silicate film 104 by oxidizing the film 103 using oxygen plasma. During a period from completion of the first process to start of the second process, the film 102 is retained in the atmosphere where oxidation reaction is hardly caused. In the third process, the surface layer portion of the silicon substrate 101 under the film 104 is oxidized to form a silicon dioxide film 105. The metal includes at least either one of hafnium and zirconium.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：形成适合用作高介电常数栅极绝缘膜并包括高介电常数的金属氮化物硅酸盐膜的绝缘膜。解决方案：用于形成绝缘膜的方法包括：在气氛中使用溅射法在硅衬底101上沉积含有金属和硅的膜102的第一工艺，其中金属原子和硅原子难以具有氧化反应，通过使用氮等离子体氮化膜102形成含有氮，金属和硅的膜103的第二工艺，以及通过使用氧等离子体氧化膜103来形成金属氮化物硅酸盐膜104的第三工艺。在从第一工序完成到第二工序开始的期间，膜102保留在不易引起氧化反应的气氛中。在第三工序中，将薄膜104下的硅衬底101的表层部分氧化，形成二氧化硅膜105.该金属包括铪和锆中的至少一种。版权所有（C）2009，JPO＆INPIT

2. 发明专利

JP2009158784A Formation method of insulation film 有权
标题翻译：绝缘膜形成方法
公开(公告)号：JP2009158784A
公开(公告)日：2009-07-16
申请号：JP2007336733
申请日：2007-12-27
申请人： Canon Anelva Corp , Canon Inc , キヤノンアネルバ株式会社 , キヤノン株式会社
发明人： FUKUCHI YUSUKE , KITAGAWA HIDEO , KITANO NAOTAKE
IPC分类号： H01L21/316 , C23C14/14
摘要： PROBLEM TO BE SOLVED: To form a high-permittivity insulation film suitable for use as a high-permittivity gate insulation film, and having improved controllability and productivity.
SOLUTION: A formation method of an insulation film has: a first process for oxidizing the surface layer section of a silicon substrate 101 as a silicon oxide film 102; a second process for forming a metal film 103 on the silicon oxide film 102 under a non-oxidizing atmosphere; a third process for diffusing a metal atom for composing the metal film 103 into the silicon oxide film 102 by exposing the metal film 103 to rare gas plasma under a non-oxidizing atmosphere; and a fourth process for forming a metal silicate film 104 by oxidizing the silicon oxide film 102 where the metal atom is diffused by radical oxidation. The rare gas plasma includes rare gases having an amount of atom closest to that of the metal atom for composing the metal film 103.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：形成适合用作高介电性栅极绝缘膜的高介电常数绝缘膜，并且具有改进的可控性和生产率。解决方案：绝缘膜的形成方法具有：将作为氧化硅膜102的硅衬底101的表层部分氧化的第一工序; 在非氧化性气氛下在氧化硅膜102上形成金属膜103的第二工序; 通过在非氧化气氛下将金属膜103暴露于稀有气体等离子体，将用于构成金属膜103的金属原子扩散到氧化硅膜102中的第三种方法; 以及通过氧化氧化硅膜102而形成金属硅酸盐膜104的第四种方法，其中金属原子通过自由基氧化而扩散。稀有气体等离子体包括具有与用于构成金属膜103的金属原子最接近的原子量的稀有气体。版权所有（C）2009，JPO＆INPIT

3. 发明专利

JP2009158783A Formation method of insulation film 审中-公开
标题翻译：绝缘膜形成方法
公开(公告)号：JP2009158783A
公开(公告)日：2009-07-16
申请号：JP2007336732
申请日：2007-12-27
申请人： Canon Anelva Corp , Canon Inc , キヤノンアネルバ株式会社 , キヤノン株式会社
发明人： FUKUCHI YUSUKE , SUZUKI NOBUMASA , KITANO NAOTAKE
IPC分类号： H01L21/316 , C23C14/14 , H01L29/78
摘要： PROBLEM TO BE SOLVED: To form a high-permittivity insulation film suitable for use as a high-permittivity gate insulation film, and having improved controllability and productivity.
SOLUTION: A formation method of an insulation film has: a first process for oxidizing the surface layer section of a silicon substrate 101 as a silicon oxide film 102; a second process for forming a metal film 103 on the silicon oxide film 102 by sputtering under a non-oxidizing atmosphere; a third process for diffusing a metal atom for composing the metal film 103 into the silicon oxide film 102 by performing heating under a non-oxidizing atmosphere; and a fourth process for forming a metal silicate film 104 including a metal atom, a silicon atom, and an oxygen atom by oxidizing the silicon oxide film 102 where the metal atom is diffused by radical oxidation.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：形成适合用作高介电性栅极绝缘膜的高介电常数绝缘膜，并且具有改进的可控性和生产率。解决方案：绝缘膜的形成方法具有：将作为氧化硅膜102的硅衬底101的表层部分氧化的第一工序; 在非氧化性气氛下通过溅射在氧化硅膜102上形成金属膜103的第二工序; 通过在非氧化气氛下进行加热，将用于构成金属膜103的金属原子扩散到氧化硅膜102中的第三种方法; 以及通过氧化通过自由基氧化扩散金属原子的氧化硅膜102形成包含金属原子，硅原子和氧原子的金属硅酸盐膜104的第四工艺。版权所有（C）2009，JPO＆INPIT

4. 发明专利

JP2008027798A Plasma treatment device 审中-公开
标题翻译：等离子体处理装置
公开(公告)号：JP2008027798A
公开(公告)日：2008-02-07
申请号：JP2006200649
申请日：2006-07-24
申请人： Canon Inc , キヤノン株式会社
发明人： FUKUCHI YUSUKE
IPC分类号： H05H1/46 , C23C16/505 , H01L21/304 , H01L21/3065 , H01L21/318
摘要： PROBLEM TO BE SOLVED: To provide a plasma treatment device to stably generate plasma by preventing a mode jump from being generated even if discharge conditions of high frequency power are changed. SOLUTION: This plasma treatment device has a reflection suppressing means to suppress reflection of a surface wave from a wall part 101a by damping the surface wave propagating on the boundary surface of a dielectric window 109 and plasma and entering the wall part 101a of a treatment vessel 101. A damping means forming one element of the reflection suppressing means has the level difference part 109a of the dielectric window 109 which is projected from the dielectric window 109 supported by the treatment vessel 101, the peripheral fringe part (taper part) 109b of the dielectric window 109 having a taper shape, a resistor 202 adjoining to the peripheral fringe part 109b of the dielectric window 109 to damp the surface wave, and the wall part 101a of the treatment vessel 101 comprising the peripheral fringe part 109b of the dielectric window 109 and a metal conductor adjoining to the resistor 202. The reflection suppressing means has a cooling means 203 to cool the damping means. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：即使改变高频功率的放电条件，通过防止产生模式跳跃来提供等离子体处理装置来稳定地产生等离子体。解决方案：该等离子体处理装置具有反射抑制装置，通过阻尼在电介质窗口109和等离子体的边界面上传播的表面波并且进入壁部101a的壁部101a，来抑制来自壁部101a的表面波的反射形成反射抑制装置的一个元件的阻尼装置具有从由处理容器101支撑的电介质窗109突出的电介质窗109的水平差部分109a，外周边缘部分（锥形部分） 109b，与电介质窗109的外围边缘部分109b邻接以阻止表面波的电阻器202以及处理容器101的壁部分101a，其包括边缘部分109b的外周边缘部分109b，电介质窗口109和与电阻器202相邻的金属导体。反射抑制装置具有用于冷却阻尼装置的冷却装置203。版权所有（C）2008，JPO＆INPIT

5. 发明专利

JP2006019559A Plasma processing device 审中-公开
标题翻译：等离子体加工装置
公开(公告)号：JP2006019559A
公开(公告)日：2006-01-19
申请号：JP2004196639
申请日：2004-07-02
申请人： Canon Inc , キヤノン株式会社
发明人： FUKUCHI YUSUKE
IPC分类号： H01L21/3065 , H01L21/304 , H01L21/31 , H05H1/00 , H05H1/46
摘要： PROBLEM TO BE SOLVED: To provide a plasma processing device for reducing charged particles, such as ions and electrons, having positive or negative charges applied to a body to be processed from plasma in which the discharge state at the initial stage of discharging is unstable. SOLUTION: The plasma processing device, having a plasma generation chamber for generating plasma by an antenna for discharging high-frequency power and the reaction chamber of a body to be processed for allowing plasma diffused from the plasma generation chamber to react with the body to be processed, comprises a means for controlling the inflow of the charged particles in plasma generated in the plasma generation chamber into the body to be processed; a detection means having a function for analyzing the generation state of plasma generated in the plasma generation chamber; and a function for feeding the analysis result of the detection means back to a means for controlling the inflow of the charged particles to the body to be processed. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种等离子体处理装置，用于减少诸如离子和电子的带电粒子，其具有从放电初始阶段的放电状态的等离子体施加到待加工物体的正或负电荷不稳定解决方案：等离子体处理装置具有用于通过用于放出高频电力的天线产生等离子体的等离子体产生室和待加工物体的反应室，用于允许从等离子体发生室扩散的等离子体与待处理体包括用于控制等离子体产生室中产生的等离子体中的带电粒子流入待处理体的装置; 检测装置，具有分析等离子体产生室中产生的等离子体的产生状态的功能; 以及用于将检测装置的分析结果馈送回用于控制带电粒子流入待处理物体的装置的功能。版权所有（C）2006，JPO＆NCIPI

6. 发明专利

JP2010118402A Method of forming semiconductor gate insulating film 审中-公开
标题翻译：形成半导体绝缘膜的方法
公开(公告)号：JP2010118402A
公开(公告)日：2010-05-27
申请号：JP2008288957
申请日：2008-11-11
申请人： Canon Inc , キヤノン株式会社
发明人： FUKUCHI YUSUKE , KITAGAWA HIDEO
IPC分类号： H01L29/78 , H01L21/316 , H01L21/336 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To solve such a problem that although a film oxidized by low-temperature oxygen radicals can attain the initial characteristics equivalent to those of the conventional thermal oxidation film, the characteristics deteriorate greatly when various kinds of stress are applied. SOLUTION: In the method of forming a semiconductor gate insulating film which forms a silicon oxide film by oxidizing the silicon surface of a silicon substrate held at a temperature of 500°C or less by using oxygen radicals, hydrogen atoms terminating the surface of the silicon substrate are removed until the surface density of 1×10 14 atoms/cm 2 or less is attained before radical oxidation is carried out. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决的问题为了解决这样一个问题，虽然通过低温氧自由基氧化的膜可以获得与常规热氧化膜相当的初始特性，但当应用各种应力时，其特性会大大降低。解决方案：在通过使用氧自由基氧化保持在500℃或更低的温度的硅衬底的硅表面形成氧化硅膜的半导体栅极绝缘膜的方法中，终止表面的氢原子去除直到在进行自由基氧化之前获得1×10 14 / SP原子/ cm 2 SP 2以下的表面密度的表面密度。版权所有（C）2010，JPO＆INPIT

7. 发明专利

JP2008276984A Plasma processing device and dielectric window 审中-公开
标题翻译：等离子体处理装置和电介质窗
公开(公告)号：JP2008276984A
公开(公告)日：2008-11-13
申请号：JP2007116138
申请日：2007-04-25
申请人： Canon Inc , キヤノン株式会社
发明人： FUKUCHI YUSUKE , SUZUKI NOBUMASA
IPC分类号： H05H1/46 , C23C16/50 , H01L21/205 , H01L21/3065 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To provide a dielectric window capable of reducing influence exerted to the whole of a processing device even if the dielectric window is broken, by solving the following problem: as to a dielectric window used in a conventional electrodeless discharge device, when a damage is caused the inside of the device depressurized, not only the dielectric window is lost, but also bad influence is exerted to the whole of the device. SOLUTION: This dielectric window 109 has a structure in which two or more dielectric plates 110, 111 are bonded to a resin layer 112 held between the dielectric plates to laminate them. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种能够降低施加在整个处理装置上的影响的电介质窗，即使介电窗口破裂，通过解决以下问题：关于在常规无电极放电中使用的电介质窗装置，当装置内部的损坏被减压时，不仅电介质窗口损失，而且对整个装置也产生不良影响。解决方案：该电介质窗109具有这样的结构，其中两个或更多个电介质板110,111结合到保持在电介质板之间的树脂层112以层压它们。版权所有（C）2009，JPO＆INPIT

8. 发明专利

JP2008181912A Plasma treating apparatus 审中-公开
标题翻译：等离子体处理装置
公开(公告)号：JP2008181912A
公开(公告)日：2008-08-07
申请号：JP2007012197
申请日：2007-01-23
申请人： Canon Inc , キヤノン株式会社
发明人： FUKUCHI YUSUKE
IPC分类号： H01L21/3065 , C23C16/511 , H01L21/31 , H05H1/46
摘要： PROBLEM TO BE SOLVED: To provide a plasma treating apparatus capable of controlling conductance without exchanging a partition board. SOLUTION: The plasma treating apparatus comprises: a treatment vessel, having a generation chamber for generating plasma and a treatment chamber where a substrate to be treated is arranged; and the partition board 111 that is installed so that it partitions the generation chamber from the treatment chamber and has a through hole for passing gas for treatment. The plasma treating apparatus also has a temperature adjustment means for adjusting the temperature of the partition board. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够在不更换隔板的情况下控制电导的等离子体处理装置。解决方案：等离子体处理装置包括：处理容器，具有用于产生等离子体的产生室和布置有要处理的基板的处理室; 以及分隔板111，其安装成使其从处理室分隔发生室，并具有用于通过用于处理的气体的通孔。等离子体处理装置还具有用于调节隔板的温度的温度调节装置。版权所有（C）2008，JPO＆INPIT

9. 发明专利

JP2006135161A Method and apparatus for forming insulating film 审中-公开
标题翻译：形成绝缘膜的方法和装置
公开(公告)号：JP2006135161A
公开(公告)日：2006-05-25
申请号：JP2004323693
申请日：2004-11-08
申请人： Canon Inc , キヤノン株式会社
发明人： FUKUCHI YUSUKE
IPC分类号： H01L21/316 , H01L21/31
CPC分类号： H01L21/31662 , H01J37/32192 , H01L21/02126 , H01L21/02236 , H01L21/02238 , H01L21/02252
摘要： PROBLEM TO BE SOLVED: To provide a method and an apparatus for forming a highly reliable insulating film by a process not relying on the high temperature heating. SOLUTION: In the process wherein an object-to-be-treated exposed on the surface of a substrate-to-be-treated is subjected to oxidation treatment according to a plasma oxidation process to form the insulating film for a semiconductor device, the plasma treatment is carried out using at least a gas containing hydrogen atoms other than H 2 O and H 2 and a gas containing oxygen atoms other than H 2 O. COPYRIGHT: (C)2006,JPO&NCIPI

10. 发明专利

JP2008288348A Plasma processor and plasma processing method 审中-公开
标题翻译：等离子体处理器和等离子体处理方法
公开(公告)号：JP2008288348A
公开(公告)日：2008-11-27
申请号：JP2007131088
申请日：2007-05-16
申请人： Canon Inc , キヤノン株式会社
发明人： KITAGAWA HIDEO , FUKUCHI YUSUKE
IPC分类号： H01L21/31 , H01L21/283 , H01L21/316 , H01L21/318 , H01L21/768 , H01L29/78
CPC分类号： H01J37/321 , H01J37/32192 , H01L21/3105
摘要： PROBLEM TO BE SOLVED: To provide a plasma processor and a plasma processing method, wherein Na generation is reduced when quartz glass, etc., are used as a dielectric component.
SOLUTION: The plasma processor has: the dielectric component containing an impurity element which becomes a positive ion and a movable ion; a vacuum container partially sealed by use of the dielectric component; a means for leading a gas into the vacuum container to adjust an internal pressure of the vacuum container; a means for radiating an electromagnetic wave into the vacuum container via the dielectric component; and a means for holding a processing body. The plasma processor generates a plasma in the vacuum container and processes the processing body by use of the plasma. An electrode is arranged on the opposite side of a face coming into contact with the plasma of the dielectric component, and a more negative DC potential than a floating potential of the face where the dielectric component comes into contact with the plasma is applied to the electrode, thereby reducing the generation of Na.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种等离子体处理器和等离子体处理方法，其中使用石英玻璃等作为电介质成分时，Na生成减少。解决方案：等离子体处理器具有：包含成为正离子的杂质元素和可移动离子的电介质成分; 通过使用电介质部件部分密封的真空容器; 用于将气体引导到真空容器中以调节真空容器的内部压力的装置; 用于经由电介质部件将电磁波辐射到真空容器中的装置; 以及用于保持加工体的装置。等离子体处理器在真空容器中产生等离子体，并通过使用等离子体处理该处理体。电极布置在与介电部件的等离子体接触的面的相对侧上，并且比电介质成分与等离子体接触的面的浮动电位更负的直流电位被施加到电极，从而减少Na的产生。版权所有（C）2009，JPO＆INPIT

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