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1. 发明专利

JP2009179883A Apparatus and method for manufacturing metal film 审中-公开
标题翻译：用于制造金属膜的装置和方法
公开(公告)号：JP2009179883A
公开(公告)日：2009-08-13
申请号：JP2009119408
申请日：2009-05-18
申请人： Canon Anelva Corp , キヤノンアネルバ株式会社
发明人： SAKAMOTO HITOSHI , OGURA KEN , NISHIMORI TOSHIHIKO , HACHIMAN NAOKI , SATAKE KOJI
IPC分类号： C23C16/455
摘要： PROBLEM TO BE SOLVED: To provide an apparatus and a method for manufacturing a metal film wherein generation of particles is prevented. SOLUTION: The metal film manufacturing apparatus is constituted so that raw material gas 18 containing halogen gas is fed in a chamber 1, gas plasma 14 is generated by supplying the power to a plasma antenna 27, a member 20 to be etched is etched by the gas plasma 14 to generate a precursor 15 of metal components and chlorine, and to deposit the metal components of the precursor 15 on a substrate 3, wherein a nozzle 50 is installed so that the raw material gas 18 to be fed inside the chamber 1 is fed in two directions of the direction toward the center of the chamber 1 and the direction toward a top plate 25. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种其中防止产生颗粒的金属膜的制造装置和方法。解决方案：金属膜制造装置构成为使得含有卤素气体的原料气体18被供给到室1中，通过向等离子体天线27供电来产生气体等离子体14，待蚀刻的构件20为通过气体等离子体14蚀刻以产生金属成分和氯的前体15，并将前体15的金属成分沉积在基材3上，其中安装喷嘴50，使得原料气体18被供给到内部腔室1沿着朝向腔室1的中心的方向的两个方向和朝向顶板25的方向进给。（C）2009年，JPO和INPIT

2. 发明专利

JP2009191365A Metal film production device, and metal film production method 审中-公开
标题翻译：金属膜生产装置和金属膜生产方法
公开(公告)号：JP2009191365A
公开(公告)日：2009-08-27
申请号：JP2009068220
申请日：2009-03-19
申请人： Canon Anelva Corp , キヤノンアネルバ株式会社
发明人： HORI KEIICHI , IRIE TAKAYUKI , NOGUCHI HIRONORI , SATAKE KOJI , SAKAMOTO HITOSHI
IPC分类号： C23C16/448 , H01L21/28 , H01L21/285
摘要： PROBLEM TO BE SOLVED: To provide a metal film production device and a metal film production method by which a film to be deposited is excellent in film thickness uniformity.
SOLUTION: A substrate 3 is installed in a chamber 1, a gaseous starting material comprising halogens is fed to the vicinity of a metallic member 11 arranged at the inside of the chamber 1, further, plasma 15 of the gaseous starting material is generated, so as to produce the radicals of the halogens, by the radicals of the halogens, the metallic material 11 is etched, so as to produce a precursor 16 composed of the metallic components comprised in the metallic member and the halogens, and the temperature of the substrate 3 is controlled to the one lower than the metallic member 11. Further, the temperature distribution in the plane of the substrate 3 is made lower at the peripheral part and is made higher at the central part, a precursor 16 is adsorbed on the substrate 3, and further, the adsorbed precursor 16 is reduced by the radicals of the halogens, so as to produce a metal film.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种金属膜制造装置和金属膜制造方法，通过该方法，待沉积的膜的膜厚度均匀性优异。解决方案：将基板3安装在室1中，将含有卤素的气态原料供给到设置在室1内部的金属构件11的附近，气态原料的等离子体15为产生卤素原子，通过卤素的自由基蚀刻金属材料11，从而制成由金属构件和卤素中所含的金属成分构成的前体16，温度将基板3的温度分布控制在比金属部件11低的位置。此外，基板3的平面内的温度分布在周边部分变低，在中心部分变得更高，前体16被吸附在基板3，并且进一步地，吸附的前体16被卤素的自由基还原，以便产生金属膜。版权所有（C）2009，JPO＆INPIT

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