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1. 发明专利

JP2012119088A Plasma processing system 审中-公开
标题翻译：等离子体处理系统
公开(公告)号：JP2012119088A
公开(公告)日：2012-06-21
申请号：JP2010265398
申请日：2010-11-29
申请人： Canon Anelva Corp , キヤノンアネルバ株式会社
发明人： IIZUKA KENTARO
IPC分类号： H05H1/46
摘要： PROBLEM TO BE SOLVED: To provide a plasma processing system arranged so that damage to the inside of a matching device can be avoided.SOLUTION: The plasma processing system includes: a high-frequency power source 10; a load 30 to which an electric power from the high-frequency power source is applied; a process chamber 40 in which plasma is generated by high frequency discharge caused by the electric power applied to the load from the high-frequency power source; a matching device 20 having components which include one or more variable reactances (C1, C2) for performing impedance matching between the high-frequency power source and the load, and input and output terminals; calculation means 27 provided in the matching device for calculating, based on the reactance value of each component, a limit value up to which an electric power can be applied to the matching device from the high-frequency power source; and a controller 50 which receives the limit value from the calculation means and issues an instruction on a target value of the output to the load from the high-frequency power source, and which controls the high-frequency power source to reduce or stop the output thereof with the target value exceeding the limit value.
摘要翻译：要解决的问题：提供等离子体处理系统，其布置成可以避免对匹配装置的内部的损坏。解决方案：等离子体处理系统包括：高频电源10; 施加来自高频电源的电力的负载30; 处理室40，其中由由高频电源施加到负载的电力引起的高频放电产生等离子体; 具有包括用于在高频电源和负载之间进行阻抗匹配的一个或多个可变电抗（C1，C2）的组件的匹配装置20以及输入和输出端子; 设置在所述匹配装置中的计算装置27，用于基于每个分量的电抗值，计算从所述高频电源向匹配装置施加电力的极限值; 以及控制器50，其从所述计算装置接收所述极限值，并向所述高频电源发出关于所述负载的输出的目标值的指令，并且控制所述高频电源以减少或停止所述输出其目标值超过限制值。版权所有（C）2012，JPO＆INPIT

2. 发明专利

JP2010255061A Sputtering apparatus and sputtering treatment method 审中-公开
标题翻译：溅射装置和喷射处理方法
公开(公告)号：JP2010255061A
公开(公告)日：2010-11-11
申请号：JP2009107696
申请日：2009-04-27
申请人： Canon Anelva Corp , キヤノンアネルバ株式会社
发明人： INOUE TADASHI , TSUCHIYA NOBUAKI , IIZUKA KENTARO , SAGO YASUMI
IPC分类号： C23C14/34 , H05H1/46
摘要： PROBLEM TO BE SOLVED: To provide a sputtering apparatus and a sputtering treatment method for attaining a stable discharge state in a short period of time and achieving film-deposition at higher speed. SOLUTION: A DC electric source 1 for applying a DC voltage to a cathode electrode 5 to which targets are attached is provided with an ignition voltage setting means; when the ignition voltage is set invalid by the ignition voltage setting means, RF power is applied to a cathode electrode 5 from an RF power source 2 and, without applying the ignition voltage to the cathode electrode 5 from the DC source 1, set power set by a host controller 12 is applied; plasma is generated and maintained in a space 6; and when the ignition voltage is set valid by the ignition voltage setting means, the ignition voltage and, subsequently, the set power are applied to the cathode electrode 5 from the DC power source 1 to generate and maintain plasma in the space 6. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种在短时间内获得稳定的放电状态的溅射装置和溅射处理方法，并且以更高的速度实现膜沉积。解决方案：用于向附着目标物的阴极5施加直流电压的直流电源1具有点火电压设定装置; 当点火电压被点火电压设定装置设定为无效时，从RF电源2向阴极电极5施加RF功率，并且不从直流电源1向阴极电极5施加点火电压，设定功率设定由主机控制器12应用; 产生等离子体并保持在空间6中; 并且当点火电压被点火电压设定装置设定为有效时，点火电压和随后的设定功率从直流电源1施加到阴极电极5，以在空间6中产生并维持等离子体。
版权所有（C）2011，JPO＆INPIT

3. 发明专利

JP2008300322A Plasma processing device, plasma processing method, matcher, and method of operating matcher 审中-公开
标题翻译：等离子体处理装置，等离子体处理方法，匹配器和操作方法
公开(公告)号：JP2008300322A
公开(公告)日：2008-12-11
申请号：JP2007148126
申请日：2007-06-04
申请人： Canon Anelva Corp , キヤノンアネルバ株式会社
发明人： TSUCHIYA NOBUAKI , IIZUKA KENTARO
IPC分类号： H05H1/46 , C23C16/505 , H01L21/3065 , H05H1/00
摘要： PROBLEM TO BE SOLVED: To help a starting of discharging surely and avoid a shifting to an impedance matching operation before the starting of discharging. SOLUTION: A plasma processing device includes a high frequency power source, a process chamber in which plasma is generated by a load applied by the power and a high frequency discharging by the impressed power, and a matcher 20 having variable capacitors C1, C2 between the high frequency power source and the load. An impedance matching between the high frequency power source and the load is conducted by controlling the variable capacitors C1, C2 when discharging. The matcher 20 has a controlling means (a controller 27) for controlling the variable capacitors C1, C2 so that a peak-to-peak voltage (Vpp) on a load side can be increased before the starting of discharging. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了有效地启动放电，并避免在放电开始之前转向阻抗匹配操作。解决方案：等离子体处理装置包括高频电源，其中通过由电源施加的负载产生等离子体的处理室和通过外加功率的高频放电，以及具有可变电容器C1， C2在高频电源和负载之间。通过在放电时控制可变电容器C1，C2来进行高频电源与负载之间的阻抗匹配。匹配器20具有用于控制可变电容器C1，C2的控制装置（控制器27），使得在放电开始之前可以增加负载侧的峰 - 峰电压（Vpp）。版权所有（C）2009，JPO＆INPIT

4. 发明专利

JP2012140672A Sputtering apparatus 审中-公开
标题翻译：溅射装置
公开(公告)号：JP2012140672A
公开(公告)日：2012-07-26
申请号：JP2010293523
申请日：2010-12-28
申请人： Canon Anelva Corp , キヤノンアネルバ株式会社
发明人： ENDO TETSUYA , OKADA ERIKO , MATSUO RYOSUKE , FUJIMOTO TAKESHI , YAMANAKA MASAHIRO , IIZUKA KENTARO
IPC分类号： C23C14/34 , G11B5/39
摘要： PROBLEM TO BE SOLVED: To provide a sputtering apparatus superior in cooling performance.SOLUTION: The sputtering apparatus includes: a target electrode; a substrate holding stage 107 including a recessed part for forming a space between a placing part for placing a substrate W and the substrate placed on the placing part; a supply source for supplying a coolant gas into the recessed part; a holding member for exerting a pressing force therebetween with the substrate holding stage to fix the substrate onto the substrate holding stage; a freezing machine 108 connected to the substrate holding stage; and a rotary drive device for rotating the substrate holding stage together with the freezing machine.
摘要翻译：要解决的问题：提供优异的冷却性能的溅射装置。解决方案：溅射装置包括：目标电极; 衬底保持台107，包括用于在放置衬底W的放置部件和放置在放置部件上的衬底之间形成空间的凹部; 用于将冷却剂气体供应到所述凹部中的供应源; 用于在其间施加压力的保持构件，其具有衬底保持台以将衬底固定到衬底保持台上; 连接到基板保持台的冷冻机108; 以及用于与冷冻机一起旋转基板保持台的旋转驱动装置。版权所有（C）2012，JPO＆INPIT

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