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    • 3. 发明专利
    • SURFACE INSPECTING DEVICE AND METHOD
    • JPH11287642A
    • 1999-10-19
    • JP9148998
    • 1998-04-03
    • ADVANTEST CORP
    • WATANABE MASAO
    • G01B11/30G01N21/21
    • PROBLEM TO BE SOLVED: To perform an inspection without requiring serious time and cost by converging and irradiating a laser beam to a held sample surface, detecting the intensity of one of the s-polarized component and p-polarized component of the reflected laser beam, dividing it by the reflecting intensity on a smooth surface of the corresponding polarized component to calculate the reflecting intensity. SOLUTION: A laser irradiating device 5 and a polarization detecting device 6 are opposed to one point on the surface of a sample 2 held by a sample holding stage 3 at a prescribed angle, and a stereomicroscope 20 is opposed thereto from just above. A polarizing plate 10 is supported in such a manner as to be rotatable around the optical axial direction to independently extract the s-polarized component and p- polarized component from the laser beam reflected by the surface of the sample 2. An optical detector 13 detects the reflecting intensity of the extracted s/p polarized component. The square of the ratio of the multiplication result of the reflecting intensities of the s-polarized component and p-polarized component detected by the polarization detecting device 6 to the multiplication result of the reflecting intensity on a smooth surface of the s/p polarized component is divided by a prescribed device constant to calculate the reflecting intensity on a rough surface.
    • 5. 发明专利
    • METHOD AND DEVICE FOR DETECTING SURFACE STATE OF WAFER
    • JPH10221268A
    • 1998-08-21
    • JP2258497
    • 1997-02-05
    • ADVANTEST CORP
    • WATANABE MASAO
    • G01B11/30G01N21/47G01N21/88G01N21/94G01N21/95G01N21/956H01L21/66
    • PROBLEM TO BE SOLVED: To quickly inspect a surface state such as fine grain pollution by radiating the measuring light transmitting a wafer from the back face of the wafer to satisfy the total reflection condition on the surface, and observing the scattered light by the generated near field leakage light. SOLUTION: A wafer to be measured 403 is mounted on an X-Y stage 401 on a wafer production line, and a laser light source 413 generating a laser beam 402 having the wavelength of about 1.2μm is fixed so that the incidence angle to the back face of the wafer 403 becomes the total reflection angle, for example. The stage 401 is moved at a high speed so that the laser beam 402 scans an observation surface. When a fine grain 404 exists at a total reflection point, the generated near field leakage light is scattered, and it is observed by an image pickup device 408 such as a CCD camera as an image on a screen 405. The obtained image signal is processed by a control device 407, and the nature of the fine grain 404 is analyzed. When p-polarization and s-polarization are applied to the incident laser beam, whether the fine grain 404 is a metal and its category can be judged.