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1. 发明专利

JP2014220415A 基板表面処理方法及び装置有权
标题翻译：基板表面处理方法和装置
公开(公告)号：JP2014220415A
公开(公告)日：2014-11-20
申请号：JP2013099380
申请日：2013-05-09
申请人：須賀唯知 , Tadatomo Suga , 唯知須賀 , ボンドテック株式会社 , Bondtech Inc
发明人： SUGA TADATOMO , YAMAUCHI AKIRA
IPC分类号： H01L21/02 , B23K20/00 , B23K20/24 , C23C14/46 , H01L21/304
CPC分类号： B23K20/00 , B23K20/24 , C23C14/46 , H01L21/02 , H01L21/30
摘要：【課題】一方の基板に対する表面処理により飛散するスパッタ粒子が他方の基板に影響をあたえずに、ライン式粒子ビーム源を用いた基板表面の処理方法及び処理装置を提供することを目的とする。【解決手段】2つの対向する基板の間に配置されたライン式粒子ビーム源を用いて、一方の基板の表面に対してビーム照射を行うことと、ビーム照射の際に、2つの基板の間に配置された遮蔽部材を用いて、一方の基板から放出される物質が他方の基板に付着することを防ぐことと、を備える基板表面処理方法。【選択図】図1
摘要翻译：要解决的问题：提供一种使用线型粒子束源的基板表面的处理方法和处理装置，其中通过一个基板的表面处理散射的溅射颗粒不影响另一个基板。解决方案：基板表面处理方法包括通过使用布置在彼此面对的两个基板之间的线型粒子束源来对一个基板的表面进行光束照射，并且在光束照射期间通过使用屏蔽构件来防止从一个基板释放的物质与另一个基板的粘附布置在两个基板之间。

2. 发明专利

JP2013251405A Bonding method of substrate having metal region 审中-公开
标题翻译：具有金属区域的基板的接合方法
公开(公告)号：JP2013251405A
公开(公告)日：2013-12-12
申请号：JP2012125246
申请日：2012-05-31
申请人： Tadatomo Suga , 唯知須賀 , Bondtech Inc , ボンドテック株式会社
发明人： SUGA TADATOMO , YAMAUCHI AKIRA
IPC分类号： H01L21/60 , B23K20/00 , B23K20/24 , H01L21/603
摘要： PROBLEM TO BE SOLVED: To provide a technique for mutually bonding substrates having a junction interface having metal regions.SOLUTION: The method of mutually bonding substrates having a junction interface having metal regions includes a step (S1) for polishing a junction interface having metal regions, a step (S2) for performing surface activation by colliding particles having predetermined kinetic energy against a polished junction interface, and further performing hydrophilic treatment by depositing the water, a step (S3) for forming a substrate assembly by bonding the junction interfaces of the substrates so that the metal regions subjected to surface activation and hydrophilic treatment come into contact with each other, and a step (S4) for heating the substrate assembly.
摘要翻译：要解决的问题：提供一种用于相互粘合具有金属区域的接合界面的基板的技术。解决方案：具有金属区域的具有接合界面的基板的相互粘合的方法包括用于抛光具有金属区域的接合界面的步骤（S1），用于通过使具有预定动能的颗粒与抛光的接合界面碰撞来进行表面活化的步骤（S2），以及进一步通过沉积水来进行亲水处理;步骤（S3），用于通过将所述接合界面的接合界面基板，使得经受表面活化和亲水处理的金属区域彼此接触;以及用于加热基板组件的步骤（S4）。

3. 发明专利

JP2013221175A Method for removing surface oxide using organic acid gas under existence of metal catalyst or inert gas atmosphere, and joining device 有权
标题翻译：在金属催化剂或惰性气体环境存在下使用有机酸气体除去表面氧化物的方法和接合装置
公开(公告)号：JP2013221175A
公开(公告)日：2013-10-28
申请号：JP2012093437
申请日：2012-04-16
申请人： Tadatomo Suga , 唯知須賀 , Bondtech Inc , ボンドテック株式会社
发明人： SUGA TADATOMO , AKAIKE MASATAKE , YANG WENHUA , YAMAUCHI AKIRA
IPC分类号： C23G5/00 , B23K20/00 , H01L25/065 , H01L25/07 , H01L25/18
CPC分类号： H01L24/75 , H01L2924/1461 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a method for joining members having a metallic region and a resin region at least on its surface portion without heating at a high temperature and without degrading resin surfaces during joining.SOLUTION: A method includes the steps of: removing an oxide film on a metallic region 3 on a first member having the metallic region and a resin region at least on its surface portion and an oxide film on a metallic region 5 on a second member having the metallic region and a resin region at least on its surface portion by blowing organic gas passed through a catalyst and hydrogen generated by degrading the organic acid gas from an opening 11 of a nozzle 6; and joining the first member and the second member so that the metallic regions from which the oxide films have been removed may contact with each other.
摘要翻译：要解决的问题：提供一种在接合期间至少在其表面部分上连接具有金属区域和树脂区域的构件而不在高温下加热而不降低树脂表面的方法。方法包括以下步骤：除去在具有金属区域的第一构件和至少在其表面部分上具有树脂区域的金属区域3上的金属区域3上的氧化物膜和具有金属区域的第二构件上的金属区域5上的氧化膜和至少在其上的树脂区域通过吹入通过催化剂的有机气体的表面部分和由喷嘴6的开口11使有机酸气体降解而产生的氢; 并且将第一构件和第二构件接合，使得已经从其去除氧化膜的金属区域彼此接触。

4. 发明专利

JP2011249643A Bonding method and bonding system 有权
标题翻译：结合方法和结合系统
公开(公告)号：JP2011249643A
公开(公告)日：2011-12-08
申请号：JP2010122616
申请日：2010-05-28
申请人： Bondtech Inc , Shinko Seiki Co Ltd , Tadatomo Suga , ボンドテック株式会社 , 神港精機株式会社 , 唯知須賀
发明人： WANG CHENXI , SUGA TADATOMO , YAMAUCHI AKIRA , KAGAMI JOJI
IPC分类号： H01L21/02 , B23K20/00 , B23K20/24
摘要： PROBLEM TO BE SOLVED: To provide a bonding technology capable of minimizing occurrence of micro voids even when heat treatment is performed in a process subsequent to a bonding process.SOLUTION: A porous oxide is created on the bonding surface of at least one of two objects to be bonded by irradiating the bonding surface with an energy wave (e.g. plasma processing) (step S10). Subsequently, an appropriate amount of water molecules is stuck to the bonding surface on which the porous oxide is created (step S20). Thereafter, the two objects to be bonded are pressed while touching the bonding surfaces thereof each other in a state where water molecules are stuck to the bonding surfaces, thus bonding the two objects to be bonded (step S30).
摘要翻译：要解决的问题：即使在接合工艺之后的过程中进行热处理，也提供能够最小化微细孔的发生的接合技术。解决方案：通过用能量波（例如等离子体处理）照射接合表面，在要接合的两个物体中的至少一个的接合表面上形成多孔氧化物（步骤S10）。随后，在形成多孔氧化物的接合面上粘贴适量的水分子（步骤S20）。此后，在水分子粘附到接合表面的状态下，接触两个接合表面的同时按压两个待粘合的物体，从而粘接待接合的两个物体（步骤S30）。版权所有（C）2012，JPO＆INPIT

5. 发明专利

JP2013251404A Surface treatment method of chip, bonding method, and surface treatment device 有权
标题翻译：切片，接合方法和表面处理装置的表面处理方法
公开(公告)号：JP2013251404A
公开(公告)日：2013-12-12
申请号：JP2012125236
申请日：2012-05-31
申请人： Tadatomo Suga , 唯知須賀 , Bondtech Inc , ボンドテック株式会社
发明人： SUGA TADATOMO , YAMAUCHI AKIRA
IPC分类号： H01L21/60 , B23K20/00 , B23K20/24 , C23C8/16 , C23G5/00
CPC分类号： H01L24/81
摘要： PROBLEM TO BE SOLVED: To provide a technique for bonding a plurality of chips to a substrate, such as a wafer, efficiently and stably by leaving no undesirable residue, such as an oxide, on a junction interface, thereby processing the chips in an oxidative atmosphere, such as the atmosphere, before and after surface treatment.SOLUTION: The surface treatment method of a metal region for bonding a chip having a chip side junction interface having one or a plurality of metal regions to a substrate includes a step S1 for preparing a chip where the surface of a metal region is coated with a volatile material, a step S2 for evaporating the volatile material and exposing the surface of the metal region, and a step S3 for performing surface activation by colliding particles having predetermined kinetic energy against the surface of the metal region in a non-oxidative atmosphere, following to the step for exposing the surface of the metal region, and further performing hydrophilic treatment by depositing the water.
摘要翻译：要解决的问题：提供一种通过在接合界面上不留下不需要的残留物（例如氧化物）将多个芯片与晶片等基板（例如晶片）结合而成的技术，从而将芯片加工成氧化气氛，如大气，表面处理前后的处理。解决方案：将具有一个或多个金属区域的具有芯片侧接合界面的芯片接合到基板的金属区域的表面处理方法包括：步骤S1，用于制备金属区域的表面涂覆有挥发性材料的芯片，用于蒸发挥发性材料并暴露金属区域的表面的步骤S2，以及通过使具有预定动能的颗粒碰撞而进行表面活化的步骤S3 在非氧化性气氛中的金属区域的表面，接着暴露金属区域的表面的步骤，并进一步进行亲水处理放水。

6. 发明专利

JP2011119717A Bonding system and bonding method 有权
标题翻译：粘接系统和粘接方法
公开(公告)号：JP2011119717A
公开(公告)日：2011-06-16
申请号：JP2010247508
申请日：2010-11-04
申请人： Bondtech Inc , Tadatomo Suga , ボンドテック株式会社 , 唯知須賀
发明人： SUGA TADATOMO , YAMAUCHI AKIRA
IPC分类号： H01L21/60
CPC分类号： H01L24/80 , H01L24/81 , H01L2224/13021 , H01L2224/16111 , H01L2224/80895 , H01L2224/80896 , H01L2224/81895 , H01L2224/81896
摘要： PROBLEM TO BE SOLVED: To provide a bonding technology capable of securing the favorable bonding strength of both objects to be bonded without forming a resin layer necessarily when both the objects to be bonded are connected electrically.
SOLUTION: In a bonding system, two objects 91 and 92 to be bonded each having a bonding part PT1 composed of one of Au(gold), Cu(copper) and Al(aluminum) and a bonding part PT2 composed of one of one of Si(silicon), SiO
2 (silicon dioxide) or glass on bonding surfaces thereof are bonded. In the bonding system, each bonding surface of two objects 91 and 92 to be bonded is subjected to hydrophilic treatment by an energy wave, and then the two objects 91 and 92 to be bonded are pressed and bonded in a state that the bonding parts PT1 of the two objects 91 and 92 to be bonded and the bonding parts PT2 of the two objects 91 and 92 to be bonded are brought into contact with each other.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种接合技术，其能够在要被接合的物体两端电连接的同时，在不形成树脂层的情况下确保两接合物的良好的接合强度。解决方案：在接合系统中，要结合的两个物体91和92具有由Au（金），Cu（铜）和Al（铝）之一组成的接合部分PT1和由一个的Si（硅），SiO 2 （二氧化硅）之一或其结合面上的玻璃。在接合系统中，要接合的两个物体91和92的每个接合表面通过能量波进行亲水处理，然后在待接合的两个物体91和92被压接和接合在接合部分PT1 要接合的两个物体91和92的两个物体91和92的接合部分PT2彼此接触。版权所有（C）2011，JPO＆INPIT

7. 发明专利

JP2013243333A Chip-on wafer bonding method and bonding device and structure including chip and wafer 审中-公开
标题翻译：嵌入式晶片结合方法和结合器件及其结构包括芯片和晶圆
公开(公告)号：JP2013243333A
公开(公告)日：2013-12-05
申请号：JP2012243900
申请日：2012-11-05
申请人： Tadatomo Suga , 唯知須賀 , Bondtech Inc , ボンドテック株式会社
发明人： SUGA TADATOMO , YAMAUCHI AKIRA
IPC分类号： H01L21/60 , B23K20/00 , B23K20/16 , H01L25/065 , H01L25/07 , H01L25/18
CPC分类号： H01L24/75 , H01L24/81 , H01L24/95 , H01L2224/16145
摘要： PROBLEM TO BE SOLVED: To provide a technique for enhancing mechanical strength by establishing electrical connection between a chip and a wafer or between a plurality of stacked chips, and for bonding a chip onto a wafer efficiently.SOLUTION: The method for bonding a chip-on wafer includes: step S1 for performing surface activation at least of a metal area of a chip side bonding surface by colliding particles having a predetermined kinetic energy, and hydrophilizing by depositing water or an OH-containing material; step S2 for performing surface activation at the bonding part of a substrate by colliding particles having a predetermined kinetic energy, and hydrophilizing by depositing water or an OH-containing material; step S3 for attaching a plurality of chips subjected to surface activation and hydrophilization, respectively, onto the corresponding bonding parts of the substrate subjected to surface activation and hydrophilization so that the metal area of the chip comes into contact with the bonding part of the substrate; and step S4 for heating a structure including the substrate and the plurality of chips attached onto the substrate.
摘要翻译：要解决的问题：提供一种通过建立芯片和晶片之间或多个堆叠芯片之间的电连接并且有效地将芯片接合到晶片上的机械强度的技术。解决方案：在晶片上包括：步骤S1，用于通过碰撞具有预定动能的颗粒，并且通过沉积水或含OH材料进行亲水化来至少对芯片侧接合表面的金属区进行表面活化; 步骤S2，用于通过碰撞具有预定动能的颗粒在基底的接合部分进行表面活化，并通过沉积水或含OH材料进行亲水化; 分别将经表面活化和亲水处理的多个芯片附着到经过表面活化和亲水处理的基板的相应接合部分上，使芯片的金属区域与基板的接合部分接触的步骤S3; 以及用于加热包括基板和附接到基板上的多个芯片的结构的步骤S4。

8. 发明专利

JP2013165253A Joining device, joining method, semiconductor device, and mems device 有权
标题翻译：接合装置，接合方法，半导体器件和MEMS器件
公开(公告)号：JP2013165253A
公开(公告)日：2013-08-22
申请号：JP2012210099
申请日：2012-09-24
申请人： Bondtech Inc , ボンドテック株式会社 , Tadatomo Suga , 唯知須賀
发明人： SUGA TADATOMO , YAMAUCHI AKIRA
IPC分类号： H01L21/02 , B23K20/00 , B81C3/00 , G21K1/00 , G21K5/04
摘要： PROBLEM TO BE SOLVED: To provide a joining device capable of reducing cost and a technology related thereto.SOLUTION: The joining device includes two holding sections 12 and 22 and an irradiation section 11. The two holding sections 12 and 22 hold both of objects 91 and 92 to be joined in a state in which the objects are separated from each other and are opposed to each other. The irradiation section 11 irradiates both of the objects 91 and 92 to be joined held by the two holding sections 12 and 22 with energy particles for surface activation processing individually and sequentially. After that, the joining means makes the two holding sections 12 and 22 be relatively close to each other and joins the objects 91 and 92 to be joined together.
摘要翻译：要解决的问题：提供一种能够降低成本的接合装置和与此相关的技术。结果：接合装置包括两个保持部12,22以及照射部11.两个保持部12和22夹持物体91 和92接合在一起的状态，其中物体彼此分离并且彼此相对。照射部11将由两个保持部12,22所接合的被接合物体91,92分别依次照射到表面活化处理用能粒子上。之后，接合装置使两个保持部分12和22彼此相对靠近，并将物体91和92接合在一起。

9. 发明专利

JP2012044188A Connection method 有权
标题翻译：连接方法
公开(公告)号：JP2012044188A
公开(公告)日：2012-03-01
申请号：JP2011190438
申请日：2011-09-01
申请人： Bondtech Inc , Tadatomo Suga , ボンドテック株式会社 , 唯知須賀
发明人： YAMAUCHI AKIRA , SUGA TADATOMO
IPC分类号： H01L21/02 , B23K20/00 , B23K20/24 , C23C14/14 , C23C14/34
摘要： PROBLEM TO BE SOLVED: To provide a technology to connect objects to be connected each other in a vacuum chamber.SOLUTION: In the connection method, the objects to be connected are connected each other by forming a connecting surface of the object to be connected which is surface-activated with a metal film by sputtering a metal onto at least one of the objects to be connected in the vacuum chamber to form the metal film, when the objects to be connected having the surface-activated connecting surfaces are to be connected each other.

10. 发明专利

JP2011119716A Bonding method, bonding system, and semiconductor device 有权
标题翻译：接合方法，接合系统和半导体器件
公开(公告)号：JP2011119716A
公开(公告)日：2011-06-16
申请号：JP2010247433
申请日：2010-11-04
申请人： Bondtech Inc , Tadatomo Suga , ボンドテック株式会社 , 唯知須賀
发明人： SUGA TADATOMO , YAMAUCHI AKIRA
IPC分类号： H01L21/02 , B23K20/00 , B23K20/24
摘要： PROBLEM TO BE SOLVED: To provide a bonding technology capable of favorably bonding two objects to be bonded each having a bonding surface formed of one of Au(gold), Cu(copper) and Al(aluminum). SOLUTION: A first object to be bonded and a second object to be bonded each having a bonding surface formed of one of Au(gold), Cu(copper) and Al(aluminum), are bonded as follows. More specifically, surface activation treatment for activating bonding surfaces of both objects to be bonded is performed by irradiating energy waves toward the bonding surfaces of both objects, i.e., the first object to be bonded and the second object to be bonded, respectively, (step S20). Subsequently, water molecule adsorption treatment for adsorbing water molecules to the bonding surfaces of both objects to be bonded after surface activation treatment is performed (step S30). Thereafter, the bonding surfaces of both the objects to be bonded after water molecule adsorption treatment are brought into contact with each other and heated (step S50). COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够有利地结合两个具有由Au（金），Cu（铜）和Al（铝）之一形成的接合表面的接合物体的接合技术。解决方案：如下结合具有由Au（金），Cu（铜）和Al（铝）中的一种形成的接合表面的待接合的第一物体和第二待接合物体。更具体地说，用于激活要接合的物体的接合表面的表面活化处理通过分别向两个物体的接合表面照射能量波，即，待接合的第一物体和待接合的第二物体（步骤 S20）。随后，进行水分子吸附处理，用于在表面活化处理之后将水分子吸附到待接合的两个物体的接合表面（步骤S30）。然后，使水分子吸附处理后的两接合体的接合面彼此接触并加热（步骤S50）。版权所有（C）2011，JPO＆INPIT

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