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2. 发明专利

JP3583622B2 Resist pattern prediction method 有权
公开(公告)号：JP3583622B2
公开(公告)日：2004-11-04
申请号：JP22463098
申请日：1998-08-07
申请人：株式会社東芝
发明人：省次三本木 , 徹小池
IPC分类号： G03F7/20 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To realize highly precise predicting precision until a defocus time, while obtaining a simple simulation model. SOLUTION: This is a resist pattern prediction method for predicting the dimension of a resist pattern to be formed by transferring a mask pattern to a resist on a wafer. In this method, the linear width predicted position and desired dimension of the resist pattern are inputted (S2), and a relation among the slope of an optical image, process factor ΔL, and edge light intensity shift ΔP is inputted (S4, S5), and an optimum image to be projected on the wafer is calculated (S6). Then, the slope of the optical image corresponding to the desired dimension at the dimension predicted position set by the S2 is calculated (S7), and the ΔL and ΔP are calculated from the relation set by the S4 and S5 based on the calculated slope (S8), and the superimposed integration of an exponent type attenuation function, and the optical image using the calculated ΔL and ΔP (S9) is operated. Then, linear width extraction in a slice level is operated according to the integrated result (S10).

3. 发明专利

JP3737656B2 Charged beam exposure method 有权
公开(公告)号：JP3737656B2
公开(公告)日：2006-01-18
申请号：JP27321699
申请日：1999-09-27
申请人：株式会社東芝
发明人：哲郎中杉 , 徹小池
IPC分类号： H01L21/027 , G03F7/20 , G03F9/00 , H01J37/28
CPC分类号： H01J37/28 , H01J2237/24578 , H01J2237/2817 , H01J2237/2826
摘要： A first beam radiation is effected by uniformly radiating an electron beam on a vicinity of an underlying mark formed on a sample. The underlying mark is formed of a material with an emission efficiency of secondary electrons different from that of the other part of the sample. Thus, a surface of the sample is charged. A second beam radiation is effected by radiating an electron beam under conditions different from those of the first beam radiation, thereby scanning the mark. Secondary electrons from the surface of the sample are detected to determined the mark position. On the basis of the mark position, an alignment exposure is effected.

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