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1. 发明专利

JP5537612B2 Lighting system 有权
标题翻译：空值
公开(公告)号：JP5537612B2
公开(公告)日：2014-07-02
申请号：JP2012153852
申请日：2012-07-09
申请人：株式会社東芝
发明人：道信井上 , 康秀岡田 , 大悟鈴木
IPC分类号： F21S2/00 , F21V8/00 , F21Y101/02 , F21Y105/00
CPC分类号： F21V5/00 , F21K9/23 , F21K9/238 , F21K9/61 , F21V7/0091 , F21V7/22 , F21V23/002 , F21V23/006 , F21V29/506 , F21V29/773 , F21V29/83 , F21V29/89 , F21Y2107/00 , F21Y2107/30 , F21Y2107/40 , F21Y2115/10

2. 发明专利

JP4875185B2 Optical semiconductor device 有权
公开(公告)号：JP4875185B2
公开(公告)日：2012-02-15
申请号：JP2010130526
申请日：2010-06-07
申请人：株式会社東芝
发明人：一生下川 , 具道中 , 章弘小島 , 進小幡 , 洋小泉 , 康秀岡田 , 吉昭杉崎 , 和人樋口
IPC分类号： H01L33/52 , H01L33/50
CPC分类号： H01L33/44 , H01L33/0079 , H01L33/0095 , H01L33/50 , H01L33/58 , H01L33/62 , H01L2224/16 , H01L2933/0058
摘要： According to one embodiment, an optical semiconductor device includes a light emitting layer, a transparent layer, a first metal post, a second metal post and a sealing layer. The light emitting layer includes a first and a second major surface, a first and a second electrode. The second major surface is a surface opposite to the first major surface, and the first electrode and second electrodes are formed on the second major surface. The transparent layer is provided on the first major surface. The first metal post is provided on the first electrode. The second metal post is provided on the second electrode. The sealing layer is provided on the second major surface. The sealing layer covers a side surface of the light emitting layer and seals the first and second metal posts while leaving end portions of the first and second metal posts exposed.

3. 发明专利

JP5475732B2 Lighting system 有权
标题翻译：空值
公开(公告)号：JP5475732B2
公开(公告)日：2014-04-16
申请号：JP2011197722
申请日：2011-09-09
申请人：株式会社東芝
发明人：道信井上 , 出小松 , 康秀岡田 , 大悟鈴木 , 久美子井岡 , 和樹舘山
IPC分类号： F21S2/00 , F21Y101/02 , H01L33/64
CPC分类号： F21V3/00 , F21K9/232 , F21K9/64 , F21V3/0418 , F21V3/0436 , F21V29/87 , F21V29/89 , F21Y2105/10 , F21Y2115/10
摘要： According to one embodiment, a lighting device(1,11a,11b) includes a body section(2,12,22), a light source(3,13), a globe(5,15,25), and a heat transfer section(9,29,39,49,49a,59,190,191). The light source(3,13) is provided on one end portion(2a) of the body section. The light source(3,13) includes a light emitting element(3b). The globe(5,15,25) is provided so as to cover the light source(3,13). The heat transfer section(9,29,39,49,49a,59,190,191) in thermal contacts with at least one of an inner surface of the globe(5,15,25) and a heat dissipation surface on the end portion(2a) side of the body section(2,12,22).
摘要翻译：根据一个实施例，照明装置（1,11a，11b）包括主体部分（2,12,22），光源（3,13），球体（5,15,25）和热传递部（9,29,39,49,49a，59190191）。光源（3,13）设置在主体部分的一个端部（2a）上。光源（3,13）包括发光元件（3b）。提供地球（5,15,25）以覆盖光源（3,13）。与球体的内表面（5,15,25）和端部（2a）上的散热表面中的至少一个热接触的传热部（9,29,39,49,49a，59,190,191）身体部分的侧面（2,12,22）。

4. 发明专利

JP5462078B2 Semiconductor light-emitting device and a method of manufacturing the same 有权
公开(公告)号：JP5462078B2
公开(公告)日：2014-04-02
申请号：JP2010130567
申请日：2010-06-07
申请人：株式会社東芝
发明人：洋小泉 , 吉昭杉崎 , 康秀岡田 , 章弘小島 , 具道中
IPC分类号： H01L33/58 , H01L33/50 , H01L33/54

5. 发明专利

JP5364771B2 Optical semiconductor device and a method of manufacturing the same 有权
公开(公告)号：JP5364771B2
公开(公告)日：2013-12-11
申请号：JP2011228364
申请日：2011-10-17
申请人：株式会社東芝
发明人：洋小泉 , 康秀岡田 , 進小幡 , 具道中 , 和人樋口 , 一生下川 , 吉昭杉崎 , 章弘小島
IPC分类号： H01L33/54 , H01L33/50
摘要： PROBLEM TO BE SOLVED: To provide an optical semiconductor device allowing mass production at a low cost and downsizing to the same extent as a semiconductor light-emitting device. SOLUTION: An optical semiconductor device comprises: a light-emitting layer 2 including a stack of semiconductor layers separated from a substrate after being epitaxially grown on the substrate; first and second electrodes 7 formed on a second primary surface of the light-emitting layer; a light-transmitting layer 5 provided on a first primary surface; a fluorescent layer 4 provided on the light-transmitting layer; first and second metal posts 8 provided on the first and second electrodes; and a sealing layer 10 that is provided on the second primary surface, is formed from a material having light shielding properties against the light emitted from the light-emitting layer, seals the first and second metal posts, and covers the side surfaces of the light-emitting layer. The side surfaces of the light-transmitting layer has a portion that is not covered with the fluorescent layer and the sealing layer. A part of the light emitted from the light-emitting layer undergoes wavelength conversion in the fluorescent layer and can be emitted to the outside, and the other part of the light can be emitted to the outside from the side surfaces of the light-transmitting layer. COPYRIGHT: (C)2012,JPO&INPIT

6. 发明专利

JP5498417B2 Semiconductor light-emitting device and a method of manufacturing the same 有权
公开(公告)号：JP5498417B2
公开(公告)日：2014-05-21
申请号：JP2011056613
申请日：2011-03-15
申请人：株式会社東芝
发明人：洋小泉 , 直明桜井 , 吉昭杉崎 , 康秀岡田 , 具道中 , 将広上北 , 章弘小島 , 陽介秋元
IPC分类号： H01L33/50
CPC分类号： H01L33/508 , H01L33/0079 , H01L33/504 , H01L33/505 , H01L2933/0016 , H01L2933/0041

7. 发明专利

JP5455854B2 A method of manufacturing a semiconductor light emitting device and a semiconductor light-emitting device 有权
公开(公告)号：JP5455854B2
公开(公告)日：2014-03-26
申请号：JP2010211175
申请日：2010-09-21
申请人：株式会社東芝
发明人：洋小泉 , 進小幡 , 康秀岡田 , 具道中
IPC分类号： H01L33/50

8. 发明专利

JP5451534B2 A method of manufacturing a semiconductor light emitting device and a semiconductor light-emitting device 有权
标题翻译：空值
公开(公告)号：JP5451534B2
公开(公告)日：2014-03-26
申请号：JP2010130427
申请日：2010-06-07
申请人：株式会社東芝
发明人：洋小泉 , 康秀岡田
IPC分类号： H01L33/48
CPC分类号： H01L2224/11

9. 发明专利

JP5337106B2 Semiconductor light-emitting device 有权
公开(公告)号：JP5337106B2
公开(公告)日：2013-11-06
申请号：JP2010128481
申请日：2010-06-04
申请人：株式会社東芝
发明人：章弘小島 , 洋小泉 , 吉昭杉崎 , 具道中 , 康秀岡田
IPC分类号： H01L33/50
CPC分类号： H01L33/50 , H01L33/46 , H01L33/486 , H01L33/58 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, a transparent layer, and a fluorescent material layer. The transparent layer is provided on the first major surface of the semiconductor layer. The transparent layer is transparent with respect to light emitted by the light emitting layer and has a trench provided outside the outer circumference of the light emitting layer. The fluorescent material layer is provided in the trench and on the transparent layer. The fluorescent material layer includes a first fluorescent material particle provided in the trench and a second fluorescent material particle provided on the transparent layer. A particle size of the first fluorescent material particle is smaller than a width of the trench. A particle size of the second fluorescent material particle is larger than the width of the trench and larger than the particle size of the first fluorescent material particle.

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