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1. 发明专利

JP2013225657A Method for manufacturing semiconductor device, substrate processing method, substrate processing device, and program 有权
标题翻译：制造半导体器件的方法，衬底处理方法，衬底处理器件和程序
公开(公告)号：JP2013225657A
公开(公告)日：2013-10-31
申请号：JP2013025016
申请日：2013-02-12
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： SHIMAMOTO SATOSHI , WATAHASHI YOSHISATO , HASHIMOTO YOSHITOMO , HIROSE YOSHIRO
IPC分类号： H01L21/318 , C23C16/42 , C23C16/455 , C23C16/56 , H01L21/31
CPC分类号： H01L21/0228 , B08B7/00 , H01L21/02126 , H01L21/02211 , H01L21/02263
摘要： PROBLEM TO BE SOLVED: To form a thin film of good quality, while suppressing generation of foreign substances in a low-temperature region.SOLUTION: A method for manufacturing a semiconductor device comprises: a step of forming a thin film, which includes at least a predetermined element and carbon, on a substrate by performing a predetermined number of times of cycles that include a step of supplying raw material gas including the predetermined element and a halogen element to the substrate in a processing container, and a step of supplying amine-based gas to the substrate in the processing container; and a step of reforming by-products deposited in the processing container, by supplying nitrogen gas in the processing container after the thin film formation.
摘要翻译：要解决的问题：形成质量好的薄膜，同时抑制在低温区域中的异物的产生。解决方案：一种制造半导体器件的方法包括：形成薄膜的步骤，其至少包括通过在处理容器中进行预定次数的循环，包括将包含预定元素和卤素元素的原料气体供给到基板的步骤，在基板上进行预定的元素和碳，基于气体的处理容器中的基材; 以及通过在薄膜形成之后在处理容器中供给氮气来重整沉积在处理容器中的副产物的步骤。

2. 发明专利

JP2015012196A 半導体装置の製造方法、基板処理装置およびプログラム有权
标题翻译：制造半导体器件的工艺，基板处理设备和程序
公开(公告)号：JP2015012196A
公开(公告)日：2015-01-19
申请号：JP2013137504
申请日：2013-06-28
申请人：株式会社日立国際電気 , Hitachi Kokusai Electric Inc
发明人： WATAHASHI YOSHISATO , HIROSE YOSHIRO
IPC分类号： H01L21/314 , C23C16/42 , H01L21/31 , H01L21/336 , H01L29/78
CPC分类号： H01L21/02126 , C23C16/30 , C23C16/45531 , H01L21/02211 , H01L21/02274 , H01L21/0228
摘要：【課題】低温領域において、HFに対する耐性が高く、誘電率の低い薄膜を、高い生産性で形成する。【解決手段】基板に対して所定元素を含む原料ガスを供給する工程と、基板に対して窒素、炭素および酸素を含む反応ガスを供給する工程と、を含むサイクルを所定回数行うことで、基板上に、所定元素、酸素、炭素および窒素を含む膜を形成する工程を有する。【選択図】図4
摘要翻译：要解决的问题：在低温区域中以高的生产率形成具有高的耐HF性和低介电常数的薄膜。解决方案：制造半导体器件的方法包括形成包含预定元素的膜，氧气通过执行预定次数的循环，包括以下步骤：在衬底上提供含有所述预定元素的材料气体的衬底上的碳，氮; 以及向衬底提供含有氮，碳和氧的反应气体。

3. 发明专利

JP2013187507A Method for manufacturing semiconductor device, substrate processing method, substrate processing apparatus, and program 有权
标题翻译：制造半导体器件的方法，基板处理方法，基板处理装置和程序
公开(公告)号：JP2013187507A
公开(公告)日：2013-09-19
申请号：JP2012053787
申请日：2012-03-09
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： KIRIKIHIRA KAORI , WATAHASHI YOSHISATO , SHIMAMOTO SATOSHI
IPC分类号： H01L21/31 , C23C16/44 , C23C16/455
CPC分类号： H01L21/0228 , C23C16/30 , C23C16/4412 , C23C16/455 , C23C16/45531 , C23C16/45546 , C23C16/52 , H01L21/02104 , H01L21/02126 , H01L21/0214 , H01L21/02167 , H01L21/02205 , H01L21/02211 , H01L21/67109 , H01L21/6715
摘要： PROBLEM TO BE SOLVED: To suppress deposition of a by-product into an exhaust pipe when a thin film is formed.SOLUTION: The method for manufacturing the semiconductor device includes a step of forming a thin film on a substrate by performing, a predetermined number of times, a cycle including the steps of: supplying a raw material gas 232 to a substrate 200 in a processing chamber 201; exhausting the raw material gas remaining in the processing chamber by an exhaust line 231 in a state in which the supply of the raw material gas is stopped; supplying an amine-based gas to the substrate in the processing chamber; and exhausting the amine-based gas remaining in the processing chamber by the exhaust line 231 in a state in which the supply of the amine-based gas is stopped. The step of exhausting the amine-based gas remaining in the processing chamber changes the opening of an exhaust valve 244 provided on the exhaust line at multiple stages.
摘要翻译：要解决的问题：在形成薄膜时抑制副产物沉积到排气管中。解决方案：制造半导体器件的方法包括以下步骤：在基片上形成预定数量的薄膜的循环，包括以下步骤：将原料气体232供给到处理室201中的基板200; 在停止供给原料气体的状态下，通过排气管线231排出残留在处理室中的原料气体; 向处理室中的基板供应胺类气体; 并且在停止供给胺系气体的状态下通过排气管线231排出残留在处理室中的胺系气体。排出残留在处理室中的胺系气体的工序，使设置在排气管上的排气阀244的开度变化多级。

4. 发明专利

JP2017117977A 半導体装置の製造方法、基板処理装置、プログラムおよび記録媒体审中-公开
公开(公告)号：JP2017117977A
公开(公告)日：2017-06-29
申请号：JP2015253099
申请日：2015-12-25
申请人：株式会社日立国際電気 , Hitachi Kokusai Electric Inc
发明人： WATAHASHI YOSHISATO , MORIYA ATSUSHI
IPC分类号： H01L21/205 , C23C16/24 , C30B25/16 , H01L21/20 , H01L21/8242 , H01L27/108
CPC分类号： H01L21/02211 , C23C16/0272 , C23C16/455 , C23C16/45523 , C23C16/45557 , C23C16/52 , H01L21/02164 , H01L21/0217 , H01L21/02271
摘要：【課題】基板上に形成する膜の膜質を向上させる。【解決手段】基板に対してハロゲン系の第1の処理ガスを供給する工程と、基板に対して非ハロゲン系の第2の処理ガスを供給する工程と、を交互に行うことで、基板上にシード層を形成する工程と、基板に対して第3の処理ガスを供給してシード層上に膜を形成する工程と、を有し、第1の処理ガスを供給する工程における基板が存在する空間の圧力を、第2の処理ガスを供給する工程における基板が存在する空間の圧力よりも大きくする。【選択図】図4

5. 发明专利

JP2014175320A Semiconductor device manufacturing method, substrate processing apparatus and program 有权
标题翻译：半导体器件制造方法，基板处理装置和程序
公开(公告)号：JP2014175320A
公开(公告)日：2014-09-22
申请号：JP2013043539
申请日：2013-03-05
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： HARADA KATSUYOSHI , HIROSE YOSHIRO , KAMAKURA TSUKASA , SANO ATSUSHI , WATAHASHI YOSHISATO
IPC分类号： H01L21/205 , C23C16/02 , C23C16/455 , H01L21/314
CPC分类号： H01L21/0228 , C23C16/0272 , C23C16/24 , C23C16/4408 , C23C16/45523 , C23C16/52 , H01L21/02205 , H01L21/02304 , H01L21/32055 , H01L21/67017
摘要： PROBLEM TO BE SOLVED: To improve level difference coverage and productivity in a deposition process of a thin film when forming the thin film on a substrate where an insulation film is formed on a surface.SOLUTION: A semiconductor device manufacturing method comprises the steps of: performing a treatment on a surface of an insulation film by supplying a first material containing a predetermined element and a halogen group to a substrate where the insulation film is formed on a surface; and performing, a predetermined number of times, a cycle which includes in one cycle a step of supplying a second material containing the predetermined element and the halogen group to the substrate and a step of supplying a third material to the substrate, thereby to form a thin film containing the predetermined element on the surface of the insulation film which is subjected to the treatment.
摘要翻译：要解决的问题：在表面上形成绝缘膜的基板上形成薄膜时，为了提高薄膜的沉积工艺中的水平差覆盖和生产率。解决方案：半导体器件制造方法包括以下步骤：通过将含有预定元素和卤素基团的第一材料供给到在表面上形成绝缘膜的基板，对绝缘膜的表面进行处理; 并且执行预定次数的循环，该循环在一个循环中包括将含有预定元素和卤素基团的第二材料供给到所述基板的步骤，以及向所述基板供给第三材料的步骤，从而形成在经过处理的绝缘膜的表面上含有预定元素的薄膜。

6. 发明专利

JP2013140944A Manufacturing method for semiconductor device, substrate processing method, substrate processing device, and program 有权
标题翻译：半导体器件的制造方法，衬底处理方法，衬底处理器件和程序
公开(公告)号：JP2013140944A
公开(公告)日：2013-07-18
申请号：JP2012233850
申请日：2012-10-23
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： HIROSE YOSHIRO , SANO ATSUSHI , WATAHASHI YOSHISATO , HASHIMOTO YOSHITOMO , SHIMAMOTO SATOSHI
IPC分类号： H01L21/314
CPC分类号： H01L21/02126 , C23C16/36 , C23C16/45523 , H01L21/02167 , H01L21/02172 , H01L21/02178 , H01L21/02181 , H01L21/02183 , H01L21/02186 , H01L21/02189 , H01L21/02211 , H01L21/0228 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To form a thin film having characteristics such as a low dielectric constant, high etching resistance, and high leak resistance.SOLUTION: A manufacturing method for a semiconductor device includes a step of forming a thin film including a prescribed element on a substrate by performing a cycle including the following steps a prescribed number of times: forming a first layer including the prescribed element, nitrogen, and carbon by alternately performing a step of supplying a material gas containing the prescribed element and a halogen element to the substrate and a step of supplying a first reaction gas which is composed of three elements of carbon, nitrogen, and hydrogen to the substrate and in which the number of carbon atoms is greater than the number of nitrogen atoms in a composition formula; and modifying the first layer to form a second layer by supplying the material gas and a second reaction gas different from the first reaction gas to the substrate.
摘要翻译：要解决的问题：形成具有低介电常数，高耐蚀刻性和高耐漏电性等特性的薄膜。解决方案：一种半导体器件的制造方法，包括：将包含规定元素的薄膜形成在第通过以下步骤进行规定次数的循环：通过交替地进行将含有规定元素和卤素元素的原料气体供给到基板的步骤，形成包含规定元素，氮和碳的第一层以及将由碳，氮和氢的三种元素构成的第一反应气体供给到所述基板中，其中碳原子数大于组成式中的氮原子数的步骤; 以及通过将不同于第一反应气体的材料气体和第二反应气体供给到基板，来修饰第一层以形成第二层。

7. 发明专利

JP2010147265A Method of manufacturing semiconductor device 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：JP2010147265A
公开(公告)日：2010-07-01
申请号：JP2008323237
申请日：2008-12-19
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： MINAMI MASAKATSU , YUASA KAZUHIRO , MEKAWA YASUHIRO , WATAHASHI YOSHISATO
IPC分类号： H01L21/316
摘要： PROBLEM TO BE SOLVED: To suppress variations in oxidation rate of a product substrate in each batch by controlling film thickness of an oxide film of a dummy substrate within the oxidation process as a step among the manufacturing steps of semiconductor device.
SOLUTION: The method of manufacturing semiconductor device includes steps of carrying a boat 2 loading a product substrate 1a and dummy substrates 1b, 1c into a chamber 4, conducting oxidation process of the product substrate 1a by supplying the gas including oxygen and the gas including hydrogen into the chamber 4 under the condition that pressure in the chamber 4 is set lower than the atmospheric pressure, and carrying the boat 2 loading the product substrate 1a and dummy substrates 1b, 1c after the oxidation process out of the chamber 4. On the front surfaces of the dummy substrates 1b, 1c, an oxide film is formed and film thickness of this oxide film is set to the thickness actualizing self-limit on growth of the oxide film formed to the product substrate 1a with the oxidation process.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决的问题为了通过控制半导体器件的制造步骤之中的步骤，通过控制氧化工艺中的虚设衬底的氧化膜的膜厚来抑制每批中的产品衬底的氧化速率的变化。解决方案：制造半导体器件的方法包括将载物体2和虚设基板1b，1c装载到室4中的舟皿2的步骤，通过供给包含氧气的气体和在室4内的压力低于大气压的条件下将包含氢气的气体输送到室4中，并且在氧化处理之后将载体2载置在室4之后的载体基板1a和虚设基板1b，1c。在虚设基板1b，1c的前表面上，形成氧化膜，并且通过氧化处理将该氧化膜的膜厚设定为形成在产品基板1a上的氧化膜生长的厚度。版权所有（C）2010，JPO＆INPIT

8. 发明专利

JP2010098283A Heat treatment apparatus and method of manufacturing semiconductor device 有权
标题翻译：热处理装置及制造半导体器件的方法
公开(公告)号：JP2010098283A
公开(公告)日：2010-04-30
申请号：JP2009047903
申请日：2009-03-02
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： WATAHASHI YOSHISATO , NAKADA SHIGEO , FUKUDA MASANAO , SASAKI TAKASHI
IPC分类号： H01L21/31 , H01L21/22 , H01L21/324
摘要： PROBLEM TO BE SOLVED: To sufficiently perform heating according to processing before gas to be supplied to a processing chamber is supplied to the processing chamber. SOLUTION: The heat treatment apparatus includes: the processing chamber which processes a substrate; a gas supply system which supplies the gas for processing the substrate in the processing chamber; and a heating part provided in the gas supply system, wherein the heating part has a plurality of walls to be provided to a sidewall inside it, a first gap is provided between a first wall and the sidewall, a second gap is provided between a second wall adjacent to the first wall and the sidewall, and the first gap and the second gap are provided at sidewall positions facing each other so as not to overlap with each other. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：在供给到处理室的气体之前，根据处理充分地进行加热，被供给到处理室。解决方案：热处理设备包括：处理基板的处理室; 气体供给系统，其将处理所述基板的气体供给到所述处理室内; 以及设置在所述气体供给系统中的加热部，其中所述加热部具有设置在所述加热部的侧壁的多个壁，在第一壁和所述侧壁之间设置有第一间隙，在第二间隙壁与第一壁和侧壁相邻，并且第一间隙和第二间隙设置在彼此面对的侧壁位置，以便彼此不重叠。版权所有（C）2010，JPO＆INPIT

9. 发明专利

JP2007116089A Substrate processing apparatus and method for manufacturing semiconductor device 有权
标题翻译：基板加工装置及制造半导体装置的方法
公开(公告)号：JP2007116089A
公开(公告)日：2007-05-10
申请号：JP2006181337
申请日：2006-06-30
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： NAKADA TAKAYUKI , NAKADA SHIGEO , OGAWA HIROYUKI , SHIBATA TAKESATO , WATAHASHI YOSHISATO
IPC分类号： H01L21/31 , H01L21/67
摘要： PROBLEM TO BE SOLVED: To prevent the generation of deposit in a lower area of a standby chamber. SOLUTION: A heat treatment apparatus 10 is provided with a treatment chamber 23 for treating a wafer 1, a boat 21 for holding the wafer 1 and carrying the wafer 1 into the treatment chamber 23, the standby chamber 16 for waiting for the carrying of the boat 21 into the treatment chamber 23, and clean units 40A, 40B for supplying clean nitrogen gas 30 to the standby chamber 16. A buffer duct 51 and a deposit preventing duct 54 are arranged in the clean unit 40B arranged on a position opposed to the boat 21, and a slit plate 57 and a fin 59 are arranged on the blowout port 56 of the deposit preventing duct 54. The nitrogen gas 30 from the buffer duct 51 is allowed to flow from the blowout port 56 of the deposit preventing duct 54 into lower space of a seal cap 20 in the stand by chamber 16, and atmosphere in the lower space is carried away to prevent the generation of deposit. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了防止在备用室的下部区域中产生沉积物。解决方案：热处理设备10设置有用于处理晶片1的处理室23，用于保持晶片1并将晶片1携带到处理室23中的船21，待机室16等待将船21携带到处理室23中，以及用于向备用室16供给清洁氮气30的清洁单元40A，40B。缓冲管道51和防沉积管道54布置在布置在位置上的清洁单元40B中相对于船21，并且在防沉降管道54的吹出口56上设有狭缝板57和翅片59.来自缓冲管道51的氮气30被允许从沉积物的吹出口56流出防止管道54进入支架室16中的密封盖20的下部空间，并且下部空间中的气氛被带走以防止沉积物的产生。版权所有（C）2007，JPO＆INPIT

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