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1. 发明专利

JP5007517B2 Radiation diffraction apparatus and radiation diffraction method 有权
$Radiation diffraction apparatus and radiation diffraction method$
公开(公告)号：JP5007517B2
公开(公告)日：2012-08-22
申请号：JP2006083834
申请日：2006-03-24
申请人：富士通株式会社
发明人：修一土井 , 直樹淡路
IPC分类号： G01N23/207
摘要： PROBLEM TO BE SOLVED: To provide a sample position adjusting device, capable of detecting the diffraction peaks of radiation, such as X rays, neutron beams, etc. with high accuracy in short time, a radiation diffraction device and a radiation diffraction method. SOLUTION: The diffraction peak of X rays is searched, while making the sample (crystal) 10 mounted on a goniometer vibrate by a piezoelectric element 34. When diffraction peaks are not detected, the amplitude of the AC voltage applied to the piezoelectric element 34 is increased. Furthermore, when diffraction peaks are detected, the amplitude of the AC voltage, applied to the piezoelectric element 34, is decreased and the center voltage is changed. COPYRIGHT: (C)2008,JPO&INPIT

2. 发明专利

JPWO2014061128A1 光電変換素子及びその製造方法有权
标题翻译：的光电转换装置及其制造方法
公开(公告)号：JPWO2014061128A1
公开(公告)日：2016-09-05
申请号：JP2014541872
申请日：2012-10-18
申请人：富士通株式会社
发明人：百瀬　悟 , 悟百瀬 , 吉川　浩太 , 浩太吉川 , 修一土井 , 修一土井
IPC分类号： H01L51/46 , H01L51/48
CPC分类号： H01L51/426 , B82Y10/00 , H01L51/0003 , H01L51/0036 , H01L51/0039 , H01L51/0047 , H01L51/0072 , H01L51/0074 , H01L51/4253 , Y02E10/549 , Y02P70/521
摘要：光電変換素子を、陽極(2)と、陰極(6)と、バルクへテロ接合を構成するp型有機半導体材料(4A)及びn型有機半導体材料(4B)を含み、前記p型有機半導体材料として主鎖にカルバゾール環、フルオレン環又はシクロペンタジチオフェン環を含む非晶性の高分子化合物を含み、前記n型有機半導体材料として非晶性のフラーレン誘導体を含む光電変換層(4)とを備え、光電変換層が、X線回折プロファイルにおいて面間隔d=1.6nm〜2.0nmに対応する回折ピークを持つものとする。
摘要翻译：一种光电转换元件，阳极（2）包括一个阴极（6），构成本体异质结（4A）和所述n型有机半导体材料（4B）的p型有机半导体材料，所述p型有机半导体材料在主链中的咔唑环作为包含具有芴环或环戊二烯基噻吩环，光电转换层，其包括作为n型有机半导体材料和无定形富勒烯衍生物的无定形聚合物化合物（4）提供，假设在光电转换层，以具有对应于面间隔d = 1.6nm〜2.0nm的X射线衍射图谱的衍射峰。

3. 发明专利

JPWO2015045123A1 光電変換素子及びその製造方法有权
标题翻译：的光电转换装置及其制造方法
公开(公告)号：JPWO2015045123A1
公开(公告)日：2017-03-02
申请号：JP2015538760
申请日：2013-09-27
申请人：富士通株式会社
发明人：悟百瀬 , 浩太吉川 , 修一土井
IPC分类号： H01L51/48 , H01L51/44 , H01L51/46
CPC分类号： H01L51/0036 , H01L51/0003 , H01L51/0028 , H01L51/0047 , H01L51/4253 , H01L51/441
摘要：光電変換素子の光電変換層(4)を形成するのに、バルクへテロ接合を構成するp型有機半導体材料(4A)としてのポリ-[N-9’-ヘプタデカニル-2,7-カルバゾール-alt-5,5-(4’,7’-ジ-2-チエニル2’,1’,3’-ベンゾチアジアゾール)]及びn型有機半導体材料(4B)としてのフラーレン誘導体を含む混合液を塗布し、乾燥させ、n型有機半導体材料よりもp型有機半導体材料を優先的に溶解する溶媒の蒸気を含む雰囲気中に暴露する。
摘要翻译：为了形成构成的本体异质结（4A）的光电转换元件（4）的光电转换层，聚作为p型有机半导体材料 - [N-9'- heptadecanyl 2,7-咔唑-alt 5,5（4“ 7'-二-2-噻吩基2' ，1”，3'-苯并噻二唑）]和混合物涂覆含有富勒烯衍生物作为n型有机半导体材料（4B）洗涤，干燥并在含有该优先溶解的溶剂的蒸汽的气氛暴露于高于n型有机半导体材料的p型有机半导体材料。

4. 发明专利

JP4053464B2 Stress evaluation method and stress evaluation apparatus according to X-ray diffraction 有权
$Stress evaluation method and stress evaluation apparatus according to X-ray diffraction$
公开(公告)号：JP4053464B2
公开(公告)日：2008-02-27
申请号：JP2003152214
申请日：2003-05-29
申请人：富士通株式会社
发明人：修一土井
IPC分类号： G01L1/00 , G01L1/25 , G01N23/207

5. 发明专利

JP5428355B2 X-ray diffraction method and x-ray diffraction apparatus 有权
$X-ray diffraction method and x-ray diffraction apparatus$
公开(公告)号：JP5428355B2
公开(公告)日：2014-02-26
申请号：JP2009014464
申请日：2009-01-26
申请人：富士通株式会社
发明人：修一土井
IPC分类号： G01N23/20

6. 发明专利

JP5012128B2 X-ray absorption analysis for the detector 有权
公开(公告)号：JP5012128B2
公开(公告)日：2012-08-29
申请号：JP2007078986
申请日：2007-03-26
申请人：富士通株式会社
发明人：修一土井
IPC分类号： G01N23/06 , G01N23/227
摘要： PROBLEM TO BE SOLVED: To simultaneously perform the measurement of an X-ray absorption spectrum due to an electron yield method and an absorbing method, with respect a plurality of samples. SOLUTION: Connection parts are provided to the front ends of detectors 50 and a plurality of the detectors 50 are connected in series through the connection parts 3 so as to pass incident X rays are passed. An X-ray passing through holes capable of being closed airtightly by a sample or the like are provided to the connection part 3. The connection parts 3 connect the before and behind detectors 50 so as to be hermetically held from the open air X-ray intensity measuring electrodes 15a and 15b, and Auger electron collecting electrode 16 are provided in the detectors 50 and either one of the electrodes are selected to be operated. Measurement is performed at the same time by the absorbing method due to the measurement of the intensities of X rays before behind the sample, and electron yield method due to the detectors before and behind the sample is performed at the same time. COPYRIGHT: (C)2009,JPO&INPIT

7. 发明专利

JP4826302B2 Measuring method of x-ray magnetic circular dichroism of magnetic multilayer film 有权
公开(公告)号：JP4826302B2
公开(公告)日：2011-11-30
申请号：JP2006073388
申请日：2006-03-16
申请人：富士通株式会社
发明人：修一土井
IPC分类号： G01N23/20

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