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1. 发明专利

JP2013152114A Thermal electromagnetic wave detecting device chip, thermal electromagnetic wave detector, and electronic apparatus 审中-公开
标题翻译：热电磁波检测装置芯片，热电磁波探测器和电子设备
公开(公告)号：JP2013152114A
公开(公告)日：2013-08-08
申请号：JP2012012214
申请日：2012-01-24
申请人： Seiko Epson Corp , セイコーエプソン株式会社
发明人： NODA TAKASHI
IPC分类号： G01J1/02 , G01N21/35
摘要： PROBLEM TO BE SOLVED: To provide a thermal electromagnetic wave detecting device chip and a thermal electromagnetic wave detector, capable of avoiding complications in a production process.SOLUTION: A light absorber film 35 comes into contact with a through space 27 so as to constitute a membrane. The membrane independently functions as a light absorbing film for a thermal photodetector 18. The surface of the membrane is not required to be further laminated with a light absorber in the through space 27. The membrane converts light to thermal energy. The produced thermal energy can be directly transmitted to the thermal photodetector 18.
摘要翻译：要解决的问题：提供能够避免生产过程中的复杂化的热电磁波检测装置芯片和热电磁波探测器。解决方案：光吸收膜35与通孔27接触，构成膜。膜独立地用作热光检测器18的光吸收膜。膜的表面不需要在通孔27中与光吸收剂进一步层压。膜将光转换成热能。产生的热能可以直接传递到热光电检测器18。

2. 发明专利

JP2013143416A Thermal type electromagnetic wave detector and electronic apparatus 审中-公开
标题翻译：热式电磁波探测器和电子设备
公开(公告)号：JP2013143416A
公开(公告)日：2013-07-22
申请号：JP2012001838
申请日：2012-01-10
申请人： Seiko Epson Corp , セイコーエプソン株式会社
发明人： NODA TAKASHI
IPC分类号： H01L31/02 , H01L27/14 , H01L27/144
摘要： PROBLEM TO BE SOLVED: To provide a thermal type electromagnetic wave detector which is formed so as to avoid being subject to structural limitations as much as possible.SOLUTION: A first substrate 12 includes an integrated circuit. A second substrate 13 is joined to the first substrate 12 on a second surface which is the opposite side of a first surface. The second substrate 13 is electrically connected with the integrated circuit through bumps 17 disposed on the second surface. One or more thermal type photo detectors 18 are formed on the first surface of the second substrate 13. A lid 19 is fixed onto the first surface of the second substrate 13. The lid 19 seals the thermal type photo detectors 18 between itself and the first surface of the second substrate 13. A pressing force is applied to the second substrate through the lid.
摘要翻译：要解决的问题：提供形成为尽可能避免受到结构限制的热型电磁波检测器。解决方案：第一基板12包括集成电路。第二基板13在与第一表面相对的第二表面上连接到第一基板12。第二基板13通过设置在第二表面上的凸块17与集成电路电连接。一个或多个热式光电检测器18形成在第二基板13的第一表面上。盖19固定在第二基板13的第一表面上。盖19将热自动检测器18与第一基板13之间的第一第二基板13的表面。通过盖将按压力施加到第二基板。

3. 发明专利

JP2013134081A Terahertz camera and electronic apparatus 审中-公开
标题翻译： TERAHERTZ摄像机和电子设备
公开(公告)号：JP2013134081A
公开(公告)日：2013-07-08
申请号：JP2011282918
申请日：2011-12-26
申请人： Seiko Epson Corp , セイコーエプソン株式会社
发明人： NODA TAKASHI
IPC分类号： G01J1/02 , H04N5/33 , H04N5/369
摘要： PROBLEM TO BE SOLVED: To provide a terahertz camera having a structure in which a reducing gas does not readily penetrate a pyroelectric material of a pyroelectric detection element as a sensor that detects a terahertz wave having wavelength of 100-1000 μm.SOLUTION: A capacitor 230 has a pyroelectric materiel 232 arranged between first and second electrodes 234, 236. The capacitor includes: a pyroelectric detection element 220 that changes polarization quantity according to temperature; a support member 210 with the pyroelectric detection element mounted on a first surface 211A side; and a support part 104 arranged with a second surface 211B of the support member neighboring a cavity part 102 and supporting a part of the support member. In a first direction D1, the support part, the support member and the pyroelectric detection element are laminated in this order. The support member has a first insulating layer 212 at least on the first surface 211A side. Given that a direction opposite to the first direction D1 is a second direction D2, a hydrogen content of the first insulating layer 212 is smaller than that of a second insulating layer (104 or 216) positioned closer toward the second direction D2 than the first insulating layer 212.
摘要翻译：要解决的问题：提供一种太赫兹相机，其具有其中还原气体不容易穿透热电检测元件的热电材料的结构，作为检测波长为100-1000μm的太赫兹波的传感器。解决方案：电容器 230具有布置在第一和第二电极234,236之间的热释电材料232.该电容器包括：根据温度改变极化量的热电检测元件220; 具有安装在第一表面211A侧的热电检测元件的支撑构件210; 以及支撑部件104，其布置有支撑构件的第二表面211B，邻近空腔部分102并支撑支撑构件的一部分。在第一方向D1上，依次层叠支撑部，支撑部件和热电检测元件。支撑构件至少在第一表面211A侧具有第一绝缘层212。假设与第一方向D1相反的方向是第二方向D2，则第一绝缘层212的氢含量小于比第一绝缘层更靠近第二方向D2的第二绝缘层（104或216）的氢含量层212。

4. 发明专利

JP2013096788A Pyroelectric type photodetector, pyroelectric type photodetecting apparatus and electronic apparatus 审中-公开
标题翻译：光电式光电转换器，光电式光电检测设备和电子设备
公开(公告)号：JP2013096788A
公开(公告)日：2013-05-20
申请号：JP2011238553
申请日：2011-10-31
申请人： Seiko Epson Corp , セイコーエプソン株式会社
发明人： NODA TAKASHI
IPC分类号： G01J1/02
摘要： PROBLEM TO BE SOLVED: To improve the detection output of a pyroelectric type photodetector by efficiently transmitting heat generated in a plurality of light absorption areas to the pyroelectric bodies of a plurality of pyroelectric capacitors.SOLUTION: The pyroelectric type photodetector comprises: a substrate 20; a support member 30; a plurality of pyroelectric capacitors Capa1 to Capa4 including the pyroelectric bodies. The support member 30 includes a first face 30A and a second face 30B opposite the first face, and forms a cavity part 100 between the second face and the substrate 20. The plurality of pyroelectric capacitors Capa1 to Capa4 are supported on the support member 30. The plurality of pyroelectric capacitors Capa1 to Capa4 respectively have light absorption areas AR1 to AR4. The projection points obtained by projecting the respective gravity centers G1a to G1d of the light absorption areas AR1 to AR4 onto a two-dimensional surface as viewed in a plane surface are located within areas J1 to J4 obtained by two-dimensionally projecting the respective contours of the pyroelectric bodies 12 of the pyroelectric capacitors Capa1 to Capa4 corresponding to the light absorption areas AR1 to AR4 onto the two-dimensional surface.
摘要翻译：要解决的问题：通过将多个光吸收区域中产生的热量有效地传递到多个热电电容器的热电体，来提高热电型光电检测器的检测输出。解决方案：热电型光电检测器包括：基板20; 支撑构件30; 包括热电体的多个热电电容器Capa1〜Capa4。支撑构件30包括与第一面相对的第一面30A和第二面30B，并且在第二面和衬底20之间形成空腔部100.多个热电电容器Capa1至Capa4被支撑在支撑构件30上。多个热电电容器Capa1〜Capa4分别具有吸光区域AR1〜AR4。通过将光吸收区域AR1〜AR4的各重心G1a〜G1d投影到平面内的二维表面而获得的投影点位于通过二维地将热电电容器Capa1至Capa4的热电体12对应于二维表面上的光吸收区域AR1至AR4。版权所有（C）2013，JPO＆INPIT

5. 发明专利

JP2013073434A Information input device and information input method 审中-公开
标题翻译：信息输入设备和信息输入方法
公开(公告)号：JP2013073434A
公开(公告)日：2013-04-22
申请号：JP2011212175
申请日：2011-09-28
申请人： Seiko Epson Corp , セイコーエプソン株式会社
发明人： YAMAMURA MITSUHIRO , NODA TAKASHI , NAGATE TAKASHI
IPC分类号： G06F3/042 , G06F3/0354
摘要： PROBLEM TO BE SOLVED: To provide an information input device that negates the need of carrying a keyboard and a mouse and can be used without giving a restraining feeling to a user.SOLUTION: An information input device 100 comprises: a far-infrared camera 10 for imaging a temperature distribution image of an information input medium surface; an information extraction section 21 for extracting locus information of a temperature change of the information input medium surface from the temperature distribution image; and an information recognition section 22 for recognizing input information on the basis of the locus information of the temperature change. In order to extract the locus information of the temperature change from the temperature distribution image, to integrate the locus information of the temperature change and to recognize the locus information integrated as the input information, input of information can be performed by changing a surface temperature of any medium by a portion and an image corresponding to the information intended to be input.
摘要翻译：要解决的问题：提供一种信息输入装置，其不需要携带键盘和鼠标，并且可以在不向用户给出约束感的情况下使用。信息输入设备100包括：远红外摄像机10，用于对信息输入介质表面的温度分布图像进行成像; 信息提取部分21，用于从温度分布图像中提取信息输入介质表面的温度变化的轨迹信息; 以及用于基于温度变化的轨迹信息来识别输入信息的信息识别部分22。为了从温度分布图像提取温度变化的轨迹信息，为了积分温度变化的轨迹信息并且识别作为输入信息集成的轨迹信息，可以通过改变信息的表面温度来进行信息的输入任何介质通过一部分和对应于要被输入的信息的图像。版权所有（C）2013，JPO＆INPIT

6. 发明专利

JP2012026934A Thermal type photodetector, thermal type photodetection device and electronic equipment 有权
标题翻译：热型光电转换器，热式光电转换装置及电子设备
公开(公告)号：JP2012026934A
公开(公告)日：2012-02-09
申请号：JP2010167516
申请日：2010-07-26
申请人： Seiko Epson Corp , セイコーエプソン株式会社
发明人： TAKIZAWA JUN , NODA TAKASHI , KAMIKAWA TAKETOMI , YAMAMURA MITSUHIRO
IPC分类号： G01J1/02 , H01L35/30 , H01L37/02
CPC分类号： G01J5/10 , G01J5/08 , G01J5/0853 , G01J5/34
摘要： PROBLEM TO BE SOLVED: To provide a thermal type photodetector, a thermal type photodetection device and electronic equipment having a heat collecting body structure which is high in thermal conduction efficiency.SOLUTION: This thermal type photodetector is provided with: a thermal type photodetection element 220A whose physical characteristics change based on temperature; a heat collecting body 270 for collecting heat, and for transmitting the collected heat to the thermal type photodetection element; a support member 210 loaded with the thermal type photodetection element at a first face 211A side; and a support part 104 in which a second face 211B of the support member is arranged so as to be faced to a hollow part 102 for supporting a portion of the support member. The heat collecting body 270 is connected to the top of the thermal type photodetection element and extended to the outside from the top of the thermal type photodetection element to be formed like a flat plate.
摘要翻译：要解决的问题：提供一种热型光电检测器，具有热传导效率高的集热体结构的热式光电检测装置和电子设备。解决方案：该热式光电检测器具有：物理特性基于温度变化的热型光电检测元件220A; 用于收集热量并将收集的热量传送到热型光电检测元件的集热体270; 支撑构件210，其在第一面211A侧装载有热型光电检测元件; 以及支撑部件104，其中支撑部件的第二面211B布置成面向用于支撑支撑部件的一部分的中空部分102。集热体270与热型光检测元件的顶部连接，从热型光检测元件的顶部延伸到外部，形成为平板状。版权所有（C）2012，JPO＆INPIT

7. 发明专利

JP2012008068A Pyroelectric detector, pyroelectric detection device, and electronic apparatus 有权
标题翻译：光电检测器，光电检测器件和电子设备
公开(公告)号：JP2012008068A
公开(公告)日：2012-01-12
申请号：JP2010145919
申请日：2010-06-28
申请人： Seiko Epson Corp , セイコーエプソン株式会社
发明人： NODA TAKASHI
IPC分类号： G01J1/02
CPC分类号： G01J5/34
摘要： PROBLEM TO BE SOLVED: To provide a pyroelectric detector, a pyroelectric detection device, and an electronic apparatus which achieve an enhanced detection feature by protecting a capacitor from reducing gas and also by suppressing dissipation of heat from a pyroelectric detection element, considering a detection principle that an amount of polarization of a pyroelectric material varies based on a temperature.SOLUTION: A pyroelectric detector 200 includes: a pyroelectric detection element 220 that includes a capacitor 230 having polarization of an amount being varied based on a temperature, and a first reducing gas barrier film 240 for protecting the capacitor from reducing gas; a support component 210 on which the pyroelectric detection element is mounted; and a support part 102 that supports a portion of the support component to thermally separate the pyroelectric detection element. The support component includes a mounting component 210A on which the capacitor is mounted, and an arm component 210B connected to the mounting component. The first reducing gas barrier film 240 is formed in an isolated pattern having a third periphery P3 between a first periphery P1 of the mounting component 210A and a second periphery P2 of the capacitor 230.
摘要翻译：要解决的问题：考虑到热电检测器，热电检测装置和电子设备，通过保护电容器免于还原气体以及通过抑制来自热电探测元件的热量的散热来实现增强的检测特征基于温度，热电材料的极化量变化的检测原理。热电检测器200包括：热电检测元件220，其包括具有基于温度变化的量的极化的电容器230和用于保护电容器免于还原气体的第一还原气体阻挡膜240; 其上安装有热电检测元件的支撑部件210; 以及支撑部分102，其支撑支撑部件的一部分以热分离热电检测元件。支撑部件包括其上安装有电容器的安装部件210A和连接到安装部件的臂部件210B。第一还原气体阻隔膜240形成为具有在安装部件210A的第一周边P1和电容器230的第二外围P2之间的第三周边P3的隔离图案。（C）2012，JPO＆INPIT

8. 发明专利

JP2011203168A Pyroelectric photodetector and method for manufacturing the same, pyroelectric photodetection device, and electronic instrument 有权
标题翻译：光电光电及其制造方法，光电式光电转换装置和电子仪器
公开(公告)号：JP2011203168A
公开(公告)日：2011-10-13
申请号：JP2010072080
申请日：2010-03-26
申请人： Seiko Epson Corp , セイコーエプソン株式会社
发明人： NODA TAKASHI , TAKIZAWA JUN
IPC分类号： G01J1/02 , H01L27/14 , H01L37/02
CPC分类号： G01J5/048 , G01J5/02 , G01J5/024 , G01J5/34 , H01L37/02
摘要： PROBLEM TO BE SOLVED: To provide a pyroelectric photodetector having a structure in which reducing gas does not readily penetrate, although light is incident on a pyroelectric photodetection element, and a method for manufacturing the pyroelectric photodetector, and to provide a pyroelectric photodetection device and an electronic instrument.SOLUTION: The pyroelectric photodetector 200 includes: a pyroelectric photodetection element 200; a support member 210 for mounting the pyroelectric photodetection element; a fixing part 100 supporting the support member by arranging a cavity 102 at a position facing the pyroelectric photodetection element; an opening part 102A communicated with the cavity being formed on a periphery of the support member in plan view from the side of the pyroelectric photodetection element; and first reducing gas barrier layers 140, 280 covering a first surface of the support member, a side surface 211C of the support member facing the opening part, an outer surface 220A of the support member and the pyroelectric photo detection element exposed in plan view.
摘要翻译：要解决的问题：提供一种热释电光电检测器，其具有尽管光入射到热电光电检测元件上的还原气体不容易渗透的结构，以及制造热电光电检测器的方法，并且提供热电光检测器件和电子仪器。解决方案：热电光电检测器200包括：热电光电检测元件200; 用于安装热电光电检测元件的支撑构件210; 固定部分100，其通过在与热电光电检测元件相对的位置处设置空腔102来支撑支撑构件; 与所述空腔连通的开口部102A从所述热电光检测元件的一侧在平面图中形成在所述支撑部件的周围; 以及覆盖支撑构件的第一表面的第一还原阻气层140,280，支撑构件的面向开口部的侧表面211C，支撑构件的外表面220A和在平面图中暴露的热电光检测元件。

9. 发明专利

JP2011203167A Pyroelectric photodetector, pyroelectric photodetection device, and electronic instrument 有权
标题翻译：光电光电设备，光电光电设备和电子仪器
公开(公告)号：JP2011203167A
公开(公告)日：2011-10-13
申请号：JP2010072079
申请日：2010-03-26
申请人： Seiko Epson Corp , セイコーエプソン株式会社
发明人： NODA TAKASHI , TAKIZAWA JUN
IPC分类号： G01J1/02 , G01J5/48 , H01L37/02
CPC分类号： G01J5/34 , G01J5/02 , G01J5/024 , H01L37/02
摘要： PROBLEM TO BE SOLVED: To provide a pyroelectric photodetector having a structure in which the heat of a capacitor having a pyroelectric body can hardly escape via a support member for supporting the capacitor, and to provide a pyroelectric photodetection device and an electronic instrument.SOLUTION: A pyroelectric photodetector 200 includes: a capacitor 230 including a pyroelectric body 232 between a first electrode 234 and a second electrode 236 such that an amount of polarization varies based on a temperature; and a support member 210 including a first surface facing a cavity 102 and a facing second surface on which the capacitor is mounted and supported. A thermal conductance G1 of the first electrode 234 disposed on the support member 210 is less than a thermal conductance G2 of the second electrode (GC1
摘要翻译：要解决的问题：提供一种具有热电体的电容器的热量几乎不能通过用于支撑电容器的支撑部件逸出并且提供热电光电检测装置和电子仪器的结构的热电光电检测器。解决方案：热电光电检测器200包括：电容器230，其包括在第一电极234和第二电极236之间的热电体232，使得极化量基于温度而变化; 以及支撑构件210，其包括面向空腔102的第一表面和面向第二表面的电容器被安装和支撑在该第二表面上。布置在支撑构件210上的第一电极234的热导率G1小于第二电极的热导G2（GC1

10. 发明专利

JP2009071242A Semiconductor device, and manufacturing method thereof 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2009071242A
公开(公告)日：2009-04-02
申请号：JP2007241017
申请日：2007-09-18
申请人： Seiko Epson Corp , セイコーエプソン株式会社
发明人： NODA TAKASHI
IPC分类号： H01L21/8246 , H01L21/768 , H01L23/522 , H01L27/105
CPC分类号： H01L27/11507 , H01L27/11502 , H01L28/57
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device that can prevent deterioration in a ferroelectric film, and has a ferroelectric capacitor having satisfactory hysteresis characteristics and has a satisfactory bit yield, and to provide a method for manufacturing the semiconductor device.
SOLUTION: The semiconductor device 1 has: the ferroelectric capacitor 3 having a first electrode 32, a ferroelectric film 33, and a second electrode 34 provided at upper portions on a substrate 21 successively; a hydrogen barrier film 4 covering the upper and side surfaces of the ferroelectric capacitor 3; an interlayer insulation film 6 covering the hydrogen barrier film 4 and the substrate 21; a contact hole 70 passing through the interlayer insulating film 6 and the hydrogen barrier film 4 to expose the second electrode 34; a barrier metal 75 that covers an inner wall surface 70a of the contact hole 70 including a portion on the second electrode 34 and is made of a conductive material having hydrogen barrier properties; and a plug conductive section 7 buried in the contact hole 70. The inner wall surface of the contact hole 70 in the hydrogen barrier film 4 is a curved surface recessed toward the inside of the contact hole 70. The internal diameter of the contact hole 70 in the hydrogen barrier film 4 becomes smaller toward the second electrode 34.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够防止铁电体膜劣化的半导体器件，并且具有令人满意的滞后特性并且具有令人满意的位产量的铁电电容器，并提供一种半导体器件的制造方法。解决方案：半导体器件1具有：具有第一电极32，强电介质膜33和设置在基板21上的上部的第二电极34的强电介质电容器3; 覆盖铁电电容器3的上表面和侧表面的氢阻挡膜4; 覆盖氢阻挡膜4和基板21的层间绝缘膜6; 通过层间绝缘膜6和氢阻挡膜4的接触孔70露出第二电极34; 阻挡金属75，其覆盖包括第二电极34上的部分的接触孔70的内壁表面70a，并且由具有氢阻挡性的导电材料制成; 以及埋在接触孔70中的插头导电部7.氢阻挡膜4中的接触孔70的内壁面是朝向接触孔70内侧凹陷的曲面。接触孔70的内径在氢阻挡膜4中朝向第二电极34变小。版权所有（C）2009，JPO＆INPIT

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