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1. 发明专利

JP2017116295A 水素濃度測定装置审中-公开
公开(公告)号：JP2017116295A
公开(公告)日：2017-06-29
申请号：JP2015249018
申请日：2015-12-21
申请人：スタンレー電気株式会社 , Stanley Electric Co Ltd , 学校法人東京理科大学 , Tokyo Univ Of Science
发明人： MATSUMOTO KOJI , SATSU YOICHI , AIMONO TAKANORI , IKEGAMI KEIICHI , UOZUMI SHINICHI , NISHIO KEIJI , YAMAGUCHI YUKI
IPC分类号： G01N27/04 , G01N21/27
CPC分类号： G01N33/005 , G01N27/04 , G01N33/0032
摘要：【課題】簡易な構成により広範囲の水素濃度を精度良く測定することが可能な水素濃度測定装置を提供する。【解決手段】水素濃度測定装置1は、検知膜2aの電気抵抗を検出する電気抵抗検出部(センサチップ2)と、検知膜2aの透過光強度を検出する透過光強度検出部(光測定ユニット3)と、第1測定範囲において、電気抵抗検出部により検出された電気抵抗に基づいて、ガス雰囲気中の水素濃度を測定する第1水素濃度測定処理と、第1測定範囲と少なくとも一部が重複する第2測定範囲において、透過光強度検出部により検出された透過光強度に基づいて、ガス雰囲気中の水素濃度を測定する第2水素濃度測定処理と、第1測定範囲と第2測定範囲との重複範囲において、第1水素濃度測定処理により測定された水素濃度と第2水素濃度測定処理により測定された水素濃度との差異を減少させる処理を行って、水素濃度の測定値を決定する測定値補正処理と、を行う制御部を備える。【選択図】図1

2. 发明专利

JP2012195435A Semiconductor light-emitting element manufacturing method 审中-公开
标题翻译：半导体发光元件制造方法
公开(公告)号：JP2012195435A
公开(公告)日：2012-10-11
申请号：JP2011058040
申请日：2011-03-16
申请人： Stanley Electric Co Ltd , スタンレー電気株式会社
发明人： MATSUMOTO KOJI
IPC分类号： H01L33/32
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element manufacturing method which can prevent development of cracks in an insulator between a plurality of element parts.SOLUTION: A semiconductor light-emitting element manufacturing method comprises: an element separation process of forming separation trenches reaching a growth substrate on a semiconductor laminate to separate the semiconductor laminate into a plurality of element parts and exposing a surface of the growth substrate; an insulation sacrificial layer formation process of forming an insulation sacrificial layer having a second film thickness less than a first film thickness of the semiconductor laminate on a surface of the growth substrate in the separation trenches; an insulation support part formation process of forming, on the insulation sacrificial layer, an insulation support part having a third film thickness thicker than the second film thickness of the insulation sacrificial layer and reaching the first film thickness of the semiconductor laminate by filling the separation trenches with an insulation material different from a material of the insulation sacrificial layer; a bonding process of bonding the support substrate with the semiconductor laminate formed on the growth substrate; a process of peeling the growth substrate from the semiconductor laminate to expose the insulation sacrificial layer; and a removal process of removing the insulation sacrificial layer by etching to expose the insulation support part.
摘要翻译：解决的问题：提供一种半导体发光元件制造方法，其可以防止多个元件部件之间的绝缘体中的裂纹的发展。解决方案：半导体发光元件制造方法包括：元件分离工艺，其在半导体层叠体上形成到达生长衬底的分离沟槽，以将半导体层压体分离成多个元件部分并且暴露生长衬底的表面 ; 绝缘牺牲层形成工艺，其在所述分离槽中在所述生长衬底的表面上形成具有小于所述半导体层叠体的第一膜厚度的第二膜厚度的绝缘牺牲层; 在所述绝缘牺牲层上形成具有比所述绝缘牺牲层的第二膜厚度厚的第三膜厚度并且通过填充所述分离沟槽达到所述半导体层叠体的第一膜厚度的绝缘支撑部件的绝缘支撑部件形成工艺绝缘材料与绝缘牺牲层的材料不同; 将支撑基板与形成在生长基板上的半导体层叠体接合的接合工序; 从半导体层叠体剥离生长衬底以暴露绝缘牺牲层的过程; 以及通过蚀刻去除绝缘牺牲层以露出绝缘支撑部的去除工艺。版权所有（C）2013，JPO＆INPIT

3. 发明专利

JP2013197340A Manufacturing method of semiconductor light-emitting element wafer, semiconductor light-emitting element wafer, and susceptor 审中-公开
标题翻译：半导体发光元件的制造方法，半导体发光元件波形和SUSCEPTOR
公开(公告)号：JP2013197340A
公开(公告)日：2013-09-30
申请号：JP2012063417
申请日：2012-03-21
申请人： Stanley Electric Co Ltd , スタンレー電気株式会社
发明人： MATSUMOTO KOJI , HORIO TADASHI
IPC分类号： H01L33/00 , H01L21/205 , H01L33/32
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor light-emitting element wafer in which total number lighting inspection can be carried out in the early stage of the manufacturing process of a semiconductor light-emitting element at a low cost, and to provide a semiconductor light-emitting element wafer, and a susceptor.SOLUTION: In the manufacturing method of a semiconductor light-emitting element wafer including a semiconductor growth step for forming a semiconductor structure layer by laminating a first semiconductor layer having a first conductivity type, an active layer, and a second semiconductor layer having a second conductivity type, sequentially on a substrate, the semiconductor growth step includes an electrode formation step for generating an abnormal growth portion where at least a part of the first semiconductor layer is exposed by performing abnormal growth at a temperature lower than the growth temperature of the semiconductor structure layer in a partial region on the substrate, forming a first electrode on the second semiconductor layer of a normal growth portion other than the abnormal growth portion after ending the semiconductor growth step, and forming a second electrode connected with the first semiconductor layer exposed from the abnormal growth portion.
摘要翻译：要解决的问题：提供一种半导体发光元件晶片的制造方法，其中可以在低成本的半导体发光元件的制造过程的早期阶段进行总数照明检查，并且提供一种半导体发光元件晶片和基座。解决方案：在包括通过层叠具有第一导电类型的第一半导体层形成半导体结构层的半导体生长步骤的半导体发光元件晶片的制造方法中，有源层和具有第二导电类型的第二半导体层，顺序地在基板上，半导体生长步骤包括电极形成步骤，用于产生异常生长部分，其中第一半导体层的至少一部分通过进行异常而被暴露在低于半导体结构层的生长温度的温度下生长在所述基板上的部分区域，在结束半导体生长步骤之后，在除了异常生长部分之外的正常生长部分的第二半导体层上形成第一电极，以及形成与从异常生长暴露的第一半导体层相连的第二电极一部分。

4. 发明专利

JP2014175338A Semiconductor light-emitting element and manufacturing method of the same 审中-公开
标题翻译：半导体发光元件及其制造方法
公开(公告)号：JP2014175338A
公开(公告)日：2014-09-22
申请号：JP2013044002
申请日：2013-03-06
申请人： Stanley Electric Co Ltd , スタンレー電気株式会社
发明人： MATSUMOTO KOJI
IPC分类号： H01L33/38
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element and a manufacturing method of the same, which can uniform a distribution of an emission intensity in a light emitting plane without decreasing manufacturing yield.SOLUTION: A semiconductor light-emitting element has a structure where a cap electrode 11, a repeller 12, a p-electrode film 13, a p-GaN (gallium nitride) layer 14, a luminescent layer 15, an n-GaN layer 16 and an n-electrode 17 are laminated on a support substrate 10. A structure in which the p-GaN layer, the luminescent layer and the n-GaN layer are laminated becomes an LED layer 19. In the p-electrode film among the p-electrode film and the n-electrode film which sandwich the LED layer in which the p-GaN (gallium nitride) layer, the luminescent layer and the n-GaN layer are laminated, low-resistance regions LR and high-resistance regions HR in which the high-resistance region and the low-resistance region have resistance values different from each other are alternately formed one by one along a boundary surface between the LED layer and the p-electrode film. In the p-electrode film, the high-resistance regions and the low-resistance regions are formed at positions where a current path between the high-resistance region and the n-electrode across the LED layer is shorter than a current path between the low-resistance region and the n-electrode across the LED layer.
摘要翻译：要解决的问题：提供一种半导体发光元件及其制造方法，其可以使发光面内的发光强度分布均匀，而不会降低制造成品率。解决方案：半导体发光元件具有将盖电极11，推斥层12，p电极膜13，p-GaN（氮化镓）层14，发光层15，n-GaN层16和n电极17层叠在一起的结构其中层叠p-GaN层，发光层和n-GaN层的结构为LED层19.在p电极膜和n电极膜中的p电极膜中，将p-GaN（氮化镓）层，发光层和n-GaN层层叠的LED层夹在其中高电阻区域和低电阻区域的低电阻区域LR和高电阻区域HR，电阻区域具有不同于每个电阻区域的电阻值 r沿着LED层和p电极膜之间的边界面逐个交替地形成。在p电极膜中，高电阻区域和低电阻区域形成在跨越LED层的高电阻区域和n电极之间的电流路径比低电平区域之间的电流路径电阻区域和跨越LED层的n电极。

5. 发明专利

JP2013145859A Semiconductor manufacturing apparatus 审中-公开
标题翻译：半导体制造设备
公开(公告)号：JP2013145859A
公开(公告)日：2013-07-25
申请号：JP2012037924
申请日：2012-02-23
申请人： Stanley Electric Co Ltd , スタンレー電気株式会社
发明人： MATSUMOTO KOJI , HORIO TADASHI
IPC分类号： H01L21/205 , C23C16/458 , F24C15/24 , H01L21/683
摘要： PROBLEM TO BE SOLVED: To resolve a temperature distribution caused by an arrangement and thermal conductivity of susceptors and a temperature distribution caused by unevenness in heat generation by a heater to achieve high temperature uniformity in a substrate thereby to perform crystal growth without causing a thickness distribution and non-uniformity in a composition.SOLUTION: In a semiconductor manufacturing apparatus comprising a susceptor on which a substrate is mounted and heating means for heating the susceptor, the susceptor 4 includes two members (first member 41 and second member 43) arranged to form an air gap 45 between the two members. A reflection layer 432 is formed on a surface opposite to the first member 41 of the member 43 (second member) positioned on the side where the substrate is mounted. The reflection layer 432 may be provided on an entire surface of the second member or may be provided in a dispersed manner. The reflection layer 432 has effect for diffusing heat radiated from the first member and can achieve uniformity in heat received by the second member.
摘要翻译：要解决的问题：为了解决由基座的布置和热导率引起的温度分布以及由加热器产生的发热不均匀引起的温度分布，以实现基板的高温均匀性，从而进行晶体生长而不产生厚度分布和组合物的不均匀性。在包括其上安装有基底的基座和用于加热基座的加热装置的半导体制造装置中，基座4包括布置成形成的两个构件（第一构件41和第二构件43）两个成员之间的气隙45。反射层432形成在与位于安装基板一侧的构件43（第二构件）的第一构件41相对的表面上。反射层432可以设置在第二构件的整个表面上，或者可以以分散的方式设置。反射层432具有用于扩散从第一构件辐射的热并且可以实现由第二构件接收的热量的均匀性的效果。

6. 发明专利

JP2012079824A Stacked semiconductor and method of manufacturing stacked semiconductor 有权
标题翻译：堆叠半导体和制造堆叠半导体的方法
公开(公告)号：JP2012079824A
公开(公告)日：2012-04-19
申请号：JP2010221949
申请日：2010-09-30
申请人： Stanley Electric Co Ltd , スタンレー電気株式会社
发明人： MATSUMOTO KOJI
IPC分类号： H01L33/32 , C23C16/34 , H01L21/205 , H01S5/343
摘要： PROBLEM TO BE SOLVED: To provide a stacked semiconductor capable of obtaining excellent crystallinity in a device layer formed on a buffer layer while providing the buffer layer with conductivity, and to provide a method of manufacturing the same.SOLUTION: An intermediate layer, in which first buffer layers and second buffer layers are alternately and repeatedly stacked more than or equal to three times on a substrate composed of a different material from that of a GaN-based nitride semiconductor film, is formed. The GaN-based nitride semiconductor film is grown on the intermediate layer to form a device layer. The first buffer layer is formed by growing the GaN-based nitride semiconductor film while doping silicon at a lower temperature than the single-crystal growth temperature. The second buffer layer is formed by alternately and repeatedly growing two kinds of GaN-based nitride semiconductor films having a different composition to each other while doping silicon at the single-crystal growth temperature. The first buffer layer is silicon-doped at a higher concentration than the second buffer layer.
摘要翻译：要解决的问题：提供一种能够在形成在缓冲层上的器件层中获得优异的结晶性的层叠半导体，同时为缓冲层提供导电性，并提供其制造方法。解决方案：中间层，其中第一缓冲层和第二缓冲层在由与GaN基氮化物半导体膜不同的材料组成的衬底上交替重复堆叠三次以上，为形成。 GaN基氮化物半导体膜在中间层上生长以形成器件层。通过在比单晶生长温度低的温度下掺杂硅来生长GaN基氮化物半导体膜来形成第一缓冲层。第二缓冲层是通过在单晶生长温度下掺杂硅而交替且重复地生长具有不同组成的两种GaN基氮化物半导体膜而形成的。第一缓冲层的硅掺杂浓度高于第二缓冲层。版权所有（C）2012，JPO＆INPIT

7. 发明专利

JP2014099434A Semiconductor light-emitting element 审中-公开
标题翻译：半导体发光元件
公开(公告)号：JP2014099434A
公开(公告)日：2014-05-29
申请号：JP2012248904
申请日：2012-11-13
申请人： Stanley Electric Co Ltd , スタンレー電気株式会社
发明人： MATSUMOTO KOJI , TAKEHARA YUJI
IPC分类号： H01L33/38 , H01L33/42 , H01L33/62
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element which can avoid current concentration and light shielding thereby to obtain good reflectance and achieve high performance such as high luminous efficiency and excellent reliability.SOLUTION: A semiconductor light-emitting element comprises: a semiconductor film including a first conductivity type first semiconductor layer, a second conductivity type second semiconductor layer and a luminescent layer provided between the first semiconductor layer and the second semiconductor layer; a first electrode provided on the first semiconductor layer; a transparent electrode layer formed on the second semiconductor layer; a reflection electrode layer formed on the transparent electrode layer; and a support substrate bonded to the reflection electrode layer via a bonding layer. The bonding layer includes a high resistance part buried in the bonding layer. The high resistance part has electric resistance higher than that of the bonding layer and is provided in a region opposite to the first electrode across the semiconductor film.
摘要翻译：要解决的问题：提供一种半导体发光元件，其可以避免电流集中和遮光，从而获得良好的反射率，并实现高发光效率和优异的可靠性等高性能。解决方案：半导体发光元件包括：半导体膜，包括第一导电型第一半导体层，第二导电型第二半导体层和设置在第一半导体层和第二半导体层之间的发光层; 设置在所述第一半导体层上的第一电极; 形成在所述第二半导体层上的透明电极层; 形成在所述透明电极层上的反射电极层; 以及经由接合层与反射电极层接合的支撑基板。接合层包括埋在接合层中的高电阻部分。高电阻部分的电阻高于接合层的电阻，并且设置在横跨半导体膜的与第一电极相对的区域中。

8. 发明专利

JP2014067777A Semiconductor light-emitting element 有权
标题翻译：半导体发光元件
公开(公告)号：JP2014067777A
公开(公告)日：2014-04-17
申请号：JP2012210523
申请日：2012-09-25
申请人： Stanley Electric Co Ltd , スタンレー電気株式会社
发明人： MATSUMOTO KOJI , HIGASHINO JIRO
IPC分类号： H01L33/64 , H01L33/38
CPC分类号： H01L33/642 , H01L33/38
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element which remedies heat dissipation performance of the entire element and in-plane heat concentration of the element to improve element characteristics such as luminous efficiency of the element, in-plane uniformity of the luminous efficiency and reliability.SOLUTION: A semiconductor light-emitting element comprises a support substrate which loads a semiconductor film on which a first electrode is formed and has a high thermal conductivity part which has thermal conductivity higher than that of the support substrate and which is embedded from a rear face to the inside of the support substrate. The high thermal conductivity part has a cross-sectional shape corresponding to a shape of the first electrode in a plane parallel with the semiconductor film and arranged in alignment with the first electrode in a parallel direction and a vertical direction of the semiconductor film.
摘要翻译：要解决的问题：为了提供补偿元件的整体散热性能和元件的面内热量集中的半导体发光元件，以提高元件的元件特性，如元件的发光效率，发光体的面内均匀性效率和可靠性。解决方案：半导体发光元件包括负载其上形成有第一电极的半导体膜的支撑衬底，并且具有导热率高于支撑衬底的热导率的高导热性部分，并且嵌入从背面到支撑基板的内侧。高导热性部分具有对应于与半导体膜平行的平面中的第一电极的形状的横截面形状，并且在半导体膜的平行方向和垂直方向上与第一电极对准。

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