会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 1. 发明专利
    • Washing and/or ashing method for ic substrate
    • 用于IC衬底的洗涤和/或刮除方法
    • JPS61125131A
    • 1986-06-12
    • JP24633184
    • 1984-11-22
    • Chlorine Eng Corp LtdSen Tokushu Kogen Kk
    • TOMIYA KAZUOKIKUCHI KIYOSHI
    • G03F7/30H01L21/027H01L21/30
    • H01L21/30
    • PURPOSE:To enable a number of IC substrates to be washed in a short time and to perform mass-production of the IC substrates by making more highly concentrated ozone generate at the time when ultraviolet rays (UV) are projected to highly concentrated oxygen. CONSTITUTION:When an IC substrate is washed using a device where a washing chamber which houses UV lamp and the IC substrate is connected with highly concentrated oxygen source, a sheathed tube of the UV lamp made of synthesized quartz is employed. While the UV lamp is cooled, UV, which permeates highly concentrated oxygen supplied to the washing chamber through the synthesized quartz is projected and a part thereof IC converted to ozone. The surface of the IC substrate is washed by the UV and the ozone.
    • 目的:为了使许多IC基板在短时间内被洗涤,并通过在将紫外线(UV)投射到高度浓缩的氧气时产生更高浓度的臭氧来进行IC基板的批量生产。 构成:使用容纳紫外灯的清洗室和IC基板与高浓度氧源连接的装置对IC基板进行清洗时,使用由合成石英制成的紫外灯的护套管。 当UV灯被冷却时,透过通过合成石英供应到洗涤室的高度浓缩的氧气的UV被投射并且其一部分IC转化为臭氧。 通过UV和臭氧洗涤IC基片的表面。