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    • 82. 发明专利
    • Driver circuit and dc-dc converter
    • 驱动电路和DC-DC转换器
    • JP2010110071A
    • 2010-05-13
    • JP2008277652
    • 2008-10-29
    • Mitsumi Electric Co Ltdミツミ電機株式会社
    • KUROYABU MASAKINAGAI TOMIYUKI
    • H02M3/155H02M1/08H02M1/38H03K17/16H03K17/687H03K19/0175
    • PROBLEM TO BE SOLVED: To provide a driver circuit which suppresses a once-through current without setting a dead time, and provides a higher frequency while suppressing the once-through current, and a DC-DC converter.
      SOLUTION: In the driver circuit having a first switching element (SW1) and a second switching element (SW2) which are connected to each other in series between a power supply terminal and a grounding terminal, and on/off-driven by a pair of complementary control signals having no dead time, a limiter circuit (LMT1) which limits a control voltage in an on-state is connected to a control terminal of at least the first switching element.
      COPYRIGHT: (C)2010,JPO&INPIT
    • 要解决的问题:提供抑制直流电流而不设置死区时间的驱动电路,并且在抑制一次直流电流的同时提供更高的频率,以及DC-DC转换器。 解决方案:在具有在电源端子和接地端子之间串联连接的第一开关元件(SW1)和第二开关元件(SW2)的驱动器电路中,并且由 一个没有死区时间的互补控制信号,限制导通状态下的控制电压的限幅电路(LMT1)被连接到至少第一开关元件的控制端。 版权所有(C)2010,JPO&INPIT
    • 84. 发明专利
    • Half bridge circuit
    • 半桥电路
    • JP2010022093A
    • 2010-01-28
    • JP2008178440
    • 2008-07-08
    • Panasonic Electric Works Co Ltdパナソニック電工株式会社
    • KIDERA KAZUNORI
    • H02M7/5387H02M1/08H02M1/38H03K17/687
    • PROBLEM TO BE SOLVED: To reduce energy loss caused by gate capacitance in a half bridge circuit equipped with a high-side FET switch and a low-side FET switch.
      SOLUTION: The half bridge circuit 10 includes: the high-side FET switch FET 1 and the low-side FET switch FET 2 which are connected in series; and a half bridge driver 12 for charging and discharging each of gate capacitances of both the FET switches and alternately turning ON and OFF. The half bridge circuit 10 generates output at a connection point 111 between both the FET switches. When the FET 1 of one side is turned OFF, the half bridge driver 12 regenerates the charges stored in the gate capacitance of FET 1 to the gate capacitance of FET 2 of the other side to be turned ON via a transformer TR3. In this way, the energy loss caused by gate capacitance is reduced, and even if a switching frequency of the FET switches is high frequency, heat generation is prevented and high efficiency is achieved.
      COPYRIGHT: (C)2010,JPO&INPIT
    • 要解决的问题:为了减少配备有高边FET开关和低边FET开关的半桥电路中由栅极电容引起的能量损失。 解决方案:半桥电路10包括:串联连接的高端FET开关FET 1和低侧FET开关FET 2; 以及半桥驱动器12,用于对两个FET开关的栅极电容进行充电和放电,并交替地导通和断开。 半桥电路10在两个FET开关之间的连接点111处产生输出。 当一侧的FET1截止时,半桥驱动器12将存储在FET1的栅极电容中的电荷再次通过变压器TR3导通到另一侧的FET 2的栅极电容。 这样就降低了由栅极电容引起的能量损失,即使FET开关的开关频率高,也能够防止发热,实现高效率化。 版权所有(C)2010,JPO&INPIT