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81. 发明专利

JP3780932B2 Transparent conductive thin film prepared for the sintered body target and a method of manufacturing the same 有权
公开(公告)号：JP3780932B2
公开(公告)日：2006-05-31
申请号：JP2001382850
申请日：2001-12-17
申请人：住友金属鉱山株式会社
发明人：能之阿部
IPC分类号： C04B35/00 , C23C14/34 , C04B35/495 , C23C14/08 , H01B13/00
摘要： PROBLEM TO BE SOLVED: To provide a target for stably manufacturing a transparent electroconductive thin-film, of which the transmittance decreases very little in an infrared wavelength region, and further which has a low resistance equal to that of an In2 O3 -Sn based film, by a sputtering method with an adequate reproducibility. SOLUTION: This method for manufacturing a sintered target includes sintering mixed powder, which contains indium oxide as a main component, and tungsten in a range of 0.003-0.15 by atom ratio for tungsten/indium. Preferably the tungsten is substitutionally dissolved into indium sites of indium oxide, and the relative density is preferably 90% or more.

82. 发明专利

JP3772354B2 Method for producing a ceramic powder 失效
公开(公告)号：JP3772354B2
公开(公告)日：2006-05-10
申请号：JP25249094
申请日：1994-10-18
申请人：株式会社村田製作所
发明人：国三郎伴野 , 光俊川本 , 幸生浜地
IPC分类号： C01G23/00 , C04B35/626 , C04B35/00 , C04B35/495 , H01G4/12
摘要： PURPOSE: To provide a method for producing ceramic powder comprising a perovskite type compound which comprises spherical particles having particle diameters of 0.1-0.5μm, has a molar ratio of 1.000±0.0O2 between an A site element and a B site element, is high in crystallinity, and is extremely little in impurities such as an alkali metal. CONSTITUTION: The method for producing the ceramic powder comprises subjecting a mixture slurry to a hydrothermic reaction to produce the perovskite type compound. The mixture slurry comprises the hydroxide compound of at least one element (referred to as an A site element) selected from the group of Mg, Ca, Sr, Ba and Pb, the hydroxide compound of at least one element (referred to a B site element) selected from the group of Ti, Zr, Hf and Sn, and water, has specific surface area of >=100m /g on the hydroxide component of the B site element, and has an A site element/B site element molar ratio of 1.020-1.100.

83. 发明专利

JP3771756B2 The piezoelectric ceramic composition 有权
公开(公告)号：JP3771756B2
公开(公告)日：2006-04-26
申请号：JP24535099
申请日：1999-08-31
申请人：京セラ株式会社
发明人：仁中久保 , 泰広中井 , 知宣江口
IPC分类号： C04B35/00 , H01L41/187 , C04B35/495
摘要： PROBLEM TO BE SOLVED: To obtain a piezoelectric ceramic composition by designing itself to contain Li, Nb and Ba as metallic elements and the respective molar ratios for their oxides to fall within a specified range to raise its Curie temperature, increase its mechanical quality factor and frequency constant and diminish the absolute value of its temperature coefficient of resonance frequency. SOLUTION: This piezoelectric ceramic composition is represented by the compositional formula xLiNbO3.yNaNbO3.zBaNb2O6 in terms of the respective molar ratios for Li, Nb and Ba oxides (where x+y+z=1); wherein a point (x, y, z) falls within the area enclosed by a polygon with points A to E as apexes in a triangular coordinate diagram, and the respective coordinates of the points A to E are shown as follows in the order of x, y and z: A: (0.050, 0.250, 0.770), B: (0.300, 0.250, 0.450), C: (0.300, 0.450, 0.250), D: (0.150, 0.600, 0.250), and E: (0.050, 0.600, 0.350).

84. 发明专利

JP3750507B2 The piezoelectric ceramic composition and piezoelectric ceramic element using the same 有权
公开(公告)号：JP3750507B2
公开(公告)日：2006-03-01
申请号：JP2000257883
申请日：2000-08-28
申请人：株式会社村田製作所
发明人：行雄坂部 , 敏和竹田
IPC分类号： C04B35/00 , C04B35/495 , H01L41/09 , H01L41/187 , H03H9/17
CPC分类号： H01L41/187 , C04B35/495 , H03H9/02031 , H03H9/178
摘要： A piezoelectric ceramic composition is provided that does not contain Pb, and yet has a large electromechanical coupling coefficient in comparison with a bismuth layered compound, as well as a piezoelectric ceramic element using the composition. This piezoelectric ceramic composition includes at least the elements Ag, Li, Nb, and O, and has an electromechanical coupling coefficient k33 of not less than about 20%.

85. 发明专利

JP2006500311A Electrolytic perovskite 审中-公开
公开(公告)号：JP2006500311A
公开(公告)日：2006-01-05
申请号：JP2004539924
申请日：2003-09-23
申请人：コーニング・インコーポレーテッド
发明人：キャメロンダブリュターナー
IPC分类号： C01G33/00 , B01D53/22 , B01D71/02 , B01J23/00 , C04B35/00 , C04B35/495 , C25B1/04 , G01N27/407 , H01B1/06 , H01B13/00 , H01M6/18 , H01M8/02 , H01M8/12 , H01M10/36
CPC分类号： H01M10/0562 , B01J23/002 , C01G33/006 , C01P2002/34 , C01P2002/54 , C01P2002/72 , C01P2002/77 , C01P2004/02 , C01P2006/40 , C01P2006/80 , C04B35/495 , C25B1/04 , G01N27/4074 , H01M8/1246 , Y02E60/366 , Y02E60/525 , Y02P70/56
摘要：電解質ペロブスカイトおよび電解質ペロブスカイトを合成する方法が、本願明細書において記載されている。基本的には、当該電解質ペロブスカイトは、０‐４００℃の温度範囲において１０‐
5 Ｓ／ｃｍ
2 よりも大なるイオン伝導率を有する固体であり、該イオンはＬｉ
+ 、Ｈ
+ 、Ｃｕ
+ 、Ａｇ
+ 、Ｎａ
+ またはＭｇ
2+ である。たとえば、Ｌｉ
1/8 Ｎａ
3/8 Ｌａ
1/4 Ｚｒ
1/4 Ｎｂ
3/4 Ｏ
3 （５．２６ｘ１０
4 Ｓ／ｃｍ）およびＬｉ
1/8 Ｋ
1/2 Ｌａ
1/8 ＮｂＯ
3 （２．８６ｘ１０
3 Ｓ／ｃｍ）は、本発明により形成された２つのペロブスカイトであり、２０℃で高いＬｉ
+ 伝導率を有している。両組成物とも、同様に、Ａｇ
+ およびＨ
+ イオンを伝導することが試験により確認された。本発明は、電解質ペロブスカイト内にあるイオンをプロトンに置換することで形成できる固体陽子伝導体も含む。電解質ペロブスカイトおよび固体陽子導体は、燃料電池、膜反応器、電流測定型炭化水素センサまたは蒸気電気分解装置を含む多種多様な用途および装置に使用することができる。

87. 发明专利

JP3720572B2 Piezoelectric ceramic 失效
公开(公告)号：JP3720572B2
公开(公告)日：2005-11-30
申请号：JP8638098
申请日：1998-03-31
申请人：京セラ株式会社
发明人：泰広中井 , 春美林 , 修一福岡
IPC分类号： H01L41/187 , C04B35/00 , C04B35/495
摘要： PROBLEM TO BE SOLVED: To obtain non-lead-based piezoelectric porcelain having at least >=100 deg.C high upper limit of temperature used and piezoelectric strain constant (d33 ) in practical level of >=100 pC/N. SOLUTION: This piezoelectric porcelain consists mainly of crystal particles comprising tungsten-bronze type compound oxide represented by the formula; Sr2 NaNb5 O15 and substituting a part of Sr with at least one kind of (Bi1/2 Li1/2 ), (Bi1/2 Na1/2 ) and (Bi1/2 K1/2 ) and at least one kind of element among Mg, Ca and Ba. In the porcelain, it is desirable that a part or all of Na is substituted with K and a part of Nb is substituted with V and/or Ta.

88. 发明专利

JP3719971B2 Silent chain coated with wear-resistant coating 有权
公开(公告)号：JP3719971B2
公开(公告)日：2005-11-24
申请号：JP2001340760
申请日：2001-11-06
申请人：株式会社椿本チエイン
发明人：昌弘小野田 , 計政岩本 , 淳一永井 , 憲一永尾
IPC分类号： F16G13/02 , C04B35/495 , C23C8/16 , C23C10/52 , F16G13/04 , F16G13/06
CPC分类号： C04B35/495 , C04B35/5607 , C04B35/5611 , C04B2235/3217 , C04B2235/3232 , C04B2235/3239 , C04B2235/3241 , C04B2235/3418 , C04B2235/5208 , C04B2235/528 , C04B2235/5292 , C04B2235/80 , F16G13/04 , Y10T428/24372 , Y10T428/24413

89. 发明专利

JP2005320192A Oxide sintered compact, spattering target, and transparent conductive thin film 审中-公开
标题翻译：氧化物烧结紧密，粉末目标和透明导电薄膜
公开(公告)号：JP2005320192A
公开(公告)日：2005-11-17
申请号：JP2004138364
申请日：2004-05-07
申请人： Sumitomo Metal Mining Co Ltd , 住友金属鉱山株式会社
发明人： OBARA TAKESHI
IPC分类号： G02F1/1343 , C04B35/00 , C04B35/495 , C23C14/06 , C23C14/08 , C23C14/34 , H01L51/50 , H05B33/14 , H05B33/28
摘要： PROBLEM TO BE SOLVED: To provide an amorphous transparent conductive thin film which is very flat and high in work function, an oxide sintered compact from which the transparent conductive thin film can be stably formed, and a spattering target using the oxide sintered body. SOLUTION: The oxide sintered compact of this invention contains 3 mass% to 20 mass% of cerium, 0.1 mass% to 4 mass% of tin, and 0.1 mass% to 0.6 mass% of titanium, and the balance consists of essentially indium and oxygen. Furthermore, it is preferable that tin and titanium are dissolved in the indium site as a solid solution. And also, it is preferable that the density of the sintered body is 7.0 g/cm 3 or larger and the average crystal particle size is 3 μm or smaller. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了提供非常平坦且功函高的非晶形透明导电薄膜，可以稳定地形成透明导电薄膜的氧化物烧结体和使用该氧化物烧结的溅射靶身体。解决方案：本发明的氧化物烧结体含有3质量％至20质量％的铈，0.1质量％至4质量％的锡和0.1质量％至0.6质量％的钛，余量基本上由铟和氧。此外，优选锡和钛作为固溶体溶解在铟部位。此外，烧结体的密度优选为7.0g / cm 3以上且平均结晶粒径为3μm以下。版权所有（C）2006，JPO＆NCIPI

90. 发明专利

JP2005298306A Oxide sintered compact, sputtering target and transparent electrically conductive thin film 审中-公开
标题翻译：氧化物烧结紧凑型，溅射目标和透明电导电薄膜
公开(公告)号：JP2005298306A
公开(公告)日：2005-10-27
申请号：JP2004120516
申请日：2004-04-15
申请人： Sumitomo Metal Mining Co Ltd , 住友金属鉱山株式会社
发明人： OBARA TAKESHI
IPC分类号： C04B35/00 , C01G41/00 , C04B35/495 , C04B35/645 , C23C14/08 , C23C14/34 , H01B5/14
摘要： PROBLEM TO BE SOLVED: To provide an oxide sintered compact capable of stably forming a transparent electrically conductive thin film having a high surface smoothness and a low specific resistance, a sputtering target and the transparent electrically conductive thin film obtained by using it. SOLUTION: The oxide sintered compact is produced by hot-pressing an indium oxide powder comprising by mass tungsten of 0.3-3%, titanium of 0.05-2% and the practical residue consisting of indium and oxygen and being supplied in a carbon vessel at the conditions of a sintering temperature of 750-900°C, a sintering pressure of 9.8 MPa or more and in Ar atmosphere where Ar pressure is 0.05 MPa or higher and below atmospheric pressure. The transparent electrically conductive thin film having the high surface smoothness and the low specific resistance can be obtained by a sputtering method using the obtained oxide sintered compact as the sputtering target. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种能够稳定地形成具有高表面平滑度和低电阻率的透明导电薄膜的氧化物烧结体，溅射靶和使用它得到的透明导电薄膜。解决方案：氧化物烧结体通过热压氧化铟粉末来制造，所述氧化铟粉末由质量分数为0.3-3％的钨，0.05-2％的钛和由铟和氧组成的实际残留物，并以碳在750-900℃的烧结温度，9.8MPa或更高的烧结压力和Ar压力为0.05MPa或更高且低于大气压的Ar气氛中进行烧结。通过使用所得到的氧化物烧结体作为溅射靶的溅射法，可以获得具有高表面平滑性和低电阻率的透明导电性薄膜。版权所有（C）2006，JPO＆NCIPI

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