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81. 发明专利

JP2009044134A Liquid crystal display 审中-公开
标题翻译：液晶显示器
公开(公告)号：JP2009044134A
公开(公告)日：2009-02-26
申请号：JP2008169188
申请日：2008-06-27
申请人： Semiconductor Energy Lab Co Ltd , 株式会社半導体エネルギー研究所
发明人： YAMAZAKI SHUNPEI , SUZUKI YUKIE , KUWABARA HIDEAKI , KIMURA HAJIME , MIYAIRI HIDEKAZU , KUROKAWA YOSHIMOTO , KOBAYASHI SATOSHI
IPC分类号： H01L29/786 , G02F1/1368 , H01L21/336
CPC分类号： G02F1/1368 , G02F1/133345 , H01L21/67207 , H01L29/41733 , H01L29/66765 , H01L29/78678 , H01L29/78696
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a liquid crystal display including a thin film transistor having highly reliable electric characteristics with high mass productivity. SOLUTION: In a liquid crystal display having reverse stagger type thin film transistor, the reverse stagger type thin film transistor has a gate insulating film formed on a gate electrode, a microcrystal semiconductor film formed on the gate insulating film as a channel forming region, a buffer layer formed on the microcrystal semiconductor film, a pair of a source region and a drain region are formed on the buffer layer, and a pair of a source electrode and a drain electrode formed on the buffer layer and touching the source region and the drain region so as to expose the regions partially. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：解决的问题：提供一种制造液晶显示器的方法，该液晶显示器包括具有高可靠电特性且具有高批量生产率的薄膜晶体管。解决方案：在具有反交错型薄膜晶体管的液晶显示器中，反向交错型薄膜晶体管具有形成在栅电极上的栅极绝缘膜，形成在栅极绝缘膜上的微晶半导体膜作为沟道形成区域，形成在微晶半导体膜上的缓冲层，在缓冲层上形成一对源极区域和漏极区域，以及形成在缓冲层上并接触源极区域的一对源极电极和漏极电极和漏极区域，以便部分地暴露该区域。版权所有（C）2009，JPO＆INPIT

82. 发明专利

JP2009021563A Manufacturing method of photoelectric conversion device 有权
标题翻译：光电转换装置的制造方法
公开(公告)号：JP2009021563A
公开(公告)日：2009-01-29
申请号：JP2008140789
申请日：2008-05-29
申请人： Semiconductor Energy Lab Co Ltd , 株式会社半導体エネルギー研究所
发明人： YAMAZAKI SHUNPEI , ARAI YASUYUKI
IPC分类号： H01L31/04
CPC分类号： H01L31/1824 , C23C16/24 , C23C16/511 , H01L21/0237 , H01L21/02532 , H01L21/0262 , H01L21/02678 , H01L21/67207 , H01L27/14632 , H01L31/022425 , H01L31/022466 , H01L31/03921 , H01L31/046 , H01L31/0463 , H01L31/0465 , H01L31/0745 , H01L31/075 , H01L31/18 , H01L31/1884 , Y02E10/545 , Y02E10/548 , Y02P70/521
摘要： PROBLEM TO BE SOLVED: To provide a photoelectric conversion device having a crystalline semiconductor layer as a photoelectric conversion layer by forming the directly formed crystalline semiconductor layer having good quality on a large-area substrate with good productivity without causing deterioration of a depositing speed. SOLUTION: A reactive gas is introduced into a treatment chamber where a substrate is placed, microwaves are introduced into the treatment chamber via a slit provided on a waveguide oppositely disposed substantially in parallel to the substrate to generate plasma, and a photoelectric conversion layer made of a semi-amorphous semiconductor is formed on the substrate. In this way, the semi-amorphous semiconductor having good quality can be obtained without deteriorating the depositing speed. The photoelectric conversion layer is formed of such the semi-amorphous semiconductor, so that the deterioration in characteristics due to optical deterioration can be reduced from one-fifth to one-tenth, and the photoelectric conversion device having very little problem in practical use can be obtained. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：解决方案：通过在大面积基板上以良好的生产率形成具有良好质量的直接形成的晶体半导体层，提供具有晶体半导体层作为光电转换层的光电转换装置，而不会导致沉积物的劣化速度。解决方案：将反应性气体引入到其中放置基板的处理室中，将微波经由设置在基本上平行于基板的相反地布置的波导上的狭缝引入处理室，以产生等离子体，并且进行光电转换在该基板上形成由半非晶半导体构成的层。以这种方式，可以获得具有良好质量的半非晶半导体，而不会降低沉积速度。光电转换层由这样的半非晶半导体形成，从而能够将由于光劣化引起的特性劣化从五分之一降低到十分之一，实际使用的光电转换装置的问题很少获得。版权所有（C）2009，JPO＆INPIT

83. 发明专利

JP2008546179A Of the low-temperature absorbing layer deposition and high-speed optical annealing system 审中-公开
公开(公告)号：JP2008546179A
公开(公告)日：2008-12-18
申请号：JP2008512459
申请日：2006-05-16
申请人：アプライドマテリアルズインコーポレイテッドApplied Materials,Incorporated
发明人：アミールアル−バヤティ， , ビアジオガロ， , アンドリューグイェン， , ケニス，エス．コリンズ， , ディーンジェニングズ， , ヒロジハナワ , ヴィジェイパリハール， , カイマ， , アブヒラッシュマユール， , カーティクラマスワミー，
IPC分类号： H01L21/265 , C23C16/01 , C23C16/44 , C23C16/505 , H01L21/314
CPC分类号： H01L21/3146 , C23C16/26 , C23C16/507 , C23C16/56 , H01J37/32082 , H01L21/67115 , H01L21/67207
摘要：半導体ウェーハをプロセスするための統合型システムであって、このシステムは熱吸収層を堆積させるトロイダルソースプラズマリアクタを含み、このリアクタは、ウェーハ支持部と、チャンバの一般的に両側に結合しているリアクタチャンバおよび外部再入トロイダル導管と、外部再入導管の１区間に電力を結合するためのＲＦソース電力アプリケータと、熱吸収材料前駆物質ガスを含有するプロセスガスソースとを含む。統合型システムはさらに光アニーリングチャンバを含む。
【選択図】図９

84. 发明专利

JP2008539564A A substrate processing platform that enables processing in different environments 审中-公开
公开(公告)号：JP2008539564A
公开(公告)日：2008-11-13
申请号：JP2008507759
申请日：2006-04-14
申请人：アプライドマテリアルズインコーポレイテッドApplied Materials,Incorporated
发明人：ヴェンダプラムアチュサラマン， , ランディアーサクール， , ロヒットシャルマ， , ウェンチャン， , アガスティジャンドラ， , アナスタンシオスパラシリス， , カイマ， , カークモーリツ， , サンダーラママーシー， , 好隆横田
IPC分类号： H01L21/26 , H01L21/31 , H01L21/677
CPC分类号： H01L21/67207 , H01L21/67115 , H01L21/67778
摘要：半導体ウエハ処理システム（４０）は、大気圧で動作し複数のウエハカセットを取り付ける工場インターフェース（２６）を含み、更に、フレーム（１６）に取り付けられ工場インターフェースにそれぞれのスリット弁を通して接続される複数のウエハ処理チャンバ（４２、４４）を含む。工場インターフェースにおけるロボットにより、カセットと処理チャンバとの間にウエハ（３２）を移送することができる。処理チャンバのうちの少なくとも１つは、減圧状態で動作でき、フレームに取り付けられた真空ポンプ（４６）によって排気される。その処理チャンバは、ウインドー（６０）を通して処理空間（１００）を照射するランプ（６６）のアレイを含む急速熱処理チャンバ（５２）であることができる。ランプヘッドは、処理空間の圧力とほぼ同じ圧力まで真空排気される。マルチステッププロセスは、異なる圧力で行うことができる。本発明は、また、スリット弁の外側に不活性ガスを流し込み（２１０）、開放されたスリット（２０６）の外側にガスカーテンを形成して毒性処理ガスの流出を阻止することができるようにする、熱処理チャンバのウエハアクセスポート（２０２）を含む。
【選択図】図２

85. 发明专利

JP4149583B2 Grinding attachment 有权
公开(公告)号：JP4149583B2
公开(公告)日：2008-09-10
申请号：JP29540298
申请日：1998-10-16
申请人：株式会社ディスコ
发明人：豊狛
IPC分类号： H01L21/683 , H01L21/00 , H01L21/304
CPC分类号： H01L21/67207 , H01L21/67132

86. 发明专利

JP2008153565A Individualizing apparatus for electronic component manufacture 有权
标题翻译：电子元件制造的个性化设备
公开(公告)号：JP2008153565A
公开(公告)日：2008-07-03
申请号：JP2006342180
申请日：2006-12-20
申请人： Towa Corp , Towa株式会社
发明人： AMAKAWA TAKESHI
IPC分类号： H01L21/56
CPC分类号： H01L21/67092 , G01N21/956 , H01L21/67207 , Y10T29/53087 , Y10T83/364
摘要： PROBLEM TO BE SOLVED: To provide an individualizing apparatus for individualizing a sealed substrate to manufacture an electronic component, capable of shortening delivery period, reducing footprint and reducing cost while accepting a requirement specification of users. SOLUTION: An individualizing apparatus S2 for an electronic component has a basic unit including an acceptor A and an individualizing part B and a delivery part C, a cleaner D equipped between the individualizing part B and the delivery part C, and an inspector E equipped to the cleaner D. The individualizing part B is arbitrarily selected depending on a requirement specification of users. A cutting-off mechanism used in the individualizing part B has a rotary blade 7, a waterjet, laser light, a wire saw, a band saw and the like. In addition, the cleaner D and the inspector E equipped to the basic unit are arbitrarily selected and equipped depending on the requirement specification of users, respectively. By equipping the cleaner D and the inspector E to the basic unit having the individualizing part B depending on the requirement specification of users, the individualizing apparatus S2 for an electronic component is configured. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种个性化装置，用于个性化密封基板以制造电子部件，能够缩短交货周期，减少占用面积并降低成本，同时接受用户的需求规格。解决方案：用于电子部件的个性化装置S2具有包括受体A和个体化部分B和输送部分C的基本单元，设置在个体化部分B和输送部分C之间的清洁器D以及检查器 E装备到清洁器D.个性化部分B根据用户的要求规格任意选择。在个性化部件B中使用的切断机构具有旋转刀片7，水刀，激光，线锯，带锯等。此外，根据用户的需求规格，清洁器D和配备到基本单元的检验员E分别任意选择和配备。通过将清洁器D和检查器E装配到具有个性化部分B的基本单元，根据用户的要求规格，配置电子部件的个性化装置S2。版权所有（C）2008，JPO＆INPIT

87. 发明专利

JP2008150711A Disk-coating system 审中-公开
标题翻译：盘式涂装系统
公开(公告)号：JP2008150711A
公开(公告)日：2008-07-03
申请号：JP2007341447
申请日：2007-12-28
申请人： Intevac Inc , インテバック・インコーポレイテッドIntevac Incorporated
发明人： FAIRBAIRN KEVIN P , BLUCK TERRY , MARION CRAIG
IPC分类号： C23C14/56 , C23C16/458 , C23C16/54 , G11B5/84 , H01L21/00
CPC分类号： C23C16/4587 , C23C14/568 , C23C16/54 , G11B5/00 , G11B5/8404 , H01L21/67161 , H01L21/67178 , H01L21/6719 , H01L21/67196 , H01L21/67207 , H01L21/67236 , H01L21/67276
摘要： PROBLEM TO BE SOLVED: To provide a system with a small footprint, which has many stations and processes substrates such as magnetic disks.
SOLUTION: In a disk processing and manufacturing device, processing chambers are stacked on top of each other and disks move through a system on disk carriers, wherein the disk carriers are adjustable to take various sizes of disks. The disks enter the system through a loading zone and are then mounted in the disk carriers. The disks are in the carrier and continuously move at a certain level through the processing chambers and then move to another level by a lift or elevator. At another level, the disks continuously move again through the system and are then output at an unloading zone.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：为了提供具有许多台站和处理诸如磁盘的基板的小占地面积的系统。解决方案：在磁盘处理和制造设备中，处理室彼此叠置堆叠，并且磁盘移动通过盘载体上的系统，其中盘载体可调节以采取各种尺寸的磁盘。磁盘通过装载区进入系统，然后安装在磁盘托架中。磁盘在载体中，并通过处理室连续地移动到一定水平，然后通过电梯或电梯移动到另一个水平。在另一个层面上，盘再次通过系统移动，然后在卸载区域输出。版权所有（C）2008，JPO＆INPIT

88. 发明专利

JP2008091645A Semiconductor manufacturing apparatus, semiconductor device manufacturing method, and storage medium 审中-公开
标题翻译：半导体制造设备，半导体器件制造方法和存储介质
公开(公告)号：JP2008091645A
公开(公告)日：2008-04-17
申请号：JP2006271265
申请日：2006-10-02
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： NARISHIMA MASAKI , KOJIMA YASUHIKO
IPC分类号： H01L21/3205 , H01L23/52
CPC分类号： H01L21/76843 , C23C16/44 , H01L21/67207 , H01L21/68742 , H01L21/76831 , H01L21/76861 , H01L21/76864 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/09701 , H01L2924/12044 , Y10T29/41 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To reduce the amount of Mn in the copper film and suppress rising of wiring resistance in forming a barrier film and a copper film by use of an alloy layer of copper and added metal, for example Mn, that is film-formed along a recessed portion of an insulating film, and subsequently embedding a copper wiring. SOLUTION: A vacuum transfer module is connected to a loader module for delivering a wafer to a wafer carrier via a load lock chamber. A formic acid processing module for supplying the wafer with steam of formic acid which is an organic acid, and a module for film-forming Cu by means of, for example, CVD, are connected to the vacuum transfer module so as to constitute a semiconductor manufacturing apparatus. The wafer W that is formed with the alloy layer and subjected to anneal processing is loaded into the apparatus, and after it is subjected to formic acid processing, Cu is film-formed. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题为了减少铜膜中的Mn量，并且通过使用铜的合金层和添加的金属例如Mn来抑制形成阻挡膜和铜膜时的布线电阻的上升，那么沿着绝缘膜的凹部成膜，然后嵌入铜布线。解决方案：真空转移模块连接到加载器模块，用于经由负载锁定室将晶片输送到晶片载体。用于向晶片供给作为有机酸的甲酸蒸汽的甲酸处理模块和用于例如通过CVD形成Cu的模块的真空转移模块连接到真空转移模块，以构成半导体制造装置。将由合金层形成并进行退火处理的晶片W装载到装置中，在进行甲酸处理后，成膜。版权所有（C）2008，JPO＆INPIT

89. 发明专利

JP2008084920A Semiconductor device and its manufacturing method 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2008084920A
公开(公告)日：2008-04-10
申请号：JP2006260349
申请日：2006-09-26
申请人： Casio Comput Co Ltd , カシオ計算機株式会社
发明人： SHIODA JUNJI
IPC分类号： H01L23/12 , H01L21/3205 , H01L21/56 , H01L23/52
CPC分类号： H01L23/3114 , H01L21/561 , H01L21/6715 , H01L21/67207 , H01L21/67745 , H01L24/02 , H01L24/11 , H01L24/12 , H01L2224/0231 , H01L2224/0401 , H01L2224/13099 , H01L2224/16 , H01L2924/01004 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01029 , H01L2924/01033 , H01L2924/014 , H01L2924/14
摘要： PROBLEM TO BE SOLVED: To leave no air bubble among wirings even if a sealing film is formed by using a filler containing silica particles or the like, in a semiconductor device called CSP that is provided with wiring, a columnar electrode formed on the connection pad of the wiring, and a sealing film.
SOLUTION: First and second sealing films 10 and 11 are provided in this order around a columnar electrode 9 on the upper surface of a protective film 5 including wiring 8. The first sealing film 10 is made of epoxy resin only. The second sealing film 11 is made of epoxy resin 11a mixed with a filler 11b. In this case, spaces among wirings 8 are entirely filled with a first sealing film formation film 10A, so that the diameter of the filler 11b is larger than spacing among the wirings 8. Thus, even if the filler 11b is arranged over the adjoining wirings 8, no space is formed among the wirings 8 under the arranged filler 11b, thereby preventing air bubbles from being produced due to the space.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：即使通过使用含有二氧化硅颗粒等的填料形成密封膜，在布线中不留下气泡，在被设置有布线的称为CSP的半导体器件中形成有柱状电极布线的连接垫和密封膜。
解决方案：第一和第二密封膜10和11依次设置在包括布线8的保护膜5的上表面上的柱状电极9.第一密封膜10仅由环氧树脂制成。第二密封膜11由与填料11b混合的环氧树脂11a制成。在这种情况下，布线8之间的间隔完全被第一密封膜形成膜10A填充，使得填料11b的直径大于布线8之间的间距。因此，即使填充物11b布置在邻接的布线如图8所示，在布置的填料11b下方的布线8之间不会形成空间，从而防止由于空间而产生气泡。版权所有（C）2008，JPO＆INPIT

90. 发明专利

JP2008078618A Apparatus and method for processing substrate, method of manufacturing semiconductor device, and recording medium 有权
标题翻译：用于处理衬底的装置和方法，制造半导体器件的方法和记录介质
公开(公告)号：JP2008078618A
公开(公告)日：2008-04-03
申请号：JP2007149614
申请日：2007-06-05
申请人： Ebara Corp , Fujitsu Ltd , Tokyo Electron Ltd , 富士通株式会社 , 東京エレクトロン株式会社 , 株式会社荏原製作所
发明人： MIYOSHI SHUSUKE , ISHIKAWA KENJI , TATEISHI HIDEKI , HAYASHI MASAKAZU , NISHIKAWA NOBUYUKI
IPC分类号： H01L21/3205 , H01L21/027 , H01L21/304 , H01L21/3065 , H01L21/3213 , H01L23/52
CPC分类号： H01L21/02063 , H01L21/67207 , H01L21/76814 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a substrate treatment method capable of cleanly treating substrates by organic compound gas, a manufacturing method for a semiconductor device using the substrate treatment method, a substrate treatment apparatus capable of cleanly treating the substrates by the organic compound gas, and a recording medium storing a program for operating the substrate treatment apparatus. SOLUTION: The substrate treatment method comprises a first process for setting the temperature of a substrate to be treated on which an metallic layer is formed to a first temperature and forming a metal complex by making the metallic layer absorb treatment gas containing organic compounds, and a second process for heating the substrate to be treated to a second temperature higher than the first temperature and sublimating the metal complex. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够通过有机化合物气体清洁基板的基板处理方法，使用该基板处理方法的半导体装置的制造方法，能够通过有机物对基板进行干净处理的基板处理装置复合气体和存储用于操作衬底处理设备的程序的记录介质。解决方案：基板处理方法包括将金属层形成的待处理基板的温度设定为第一温度的第一工艺，并且通过使金属层吸收含有有机化合物的处理气体形成金属络合物以及将待处理的基板加热到高于第一温度的第二温度并升华金属络合物的第二工艺。版权所有（C）2008，JPO＆INPIT

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