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81. 发明专利

JPS61219029A FORMATION OF LIQUID CRYSTAL ORIENTING FILM 失效
公开(公告)号：JPS61219029A
公开(公告)日：1986-09-29
申请号：JP5948685
申请日：1985-03-26
申请人： ULVAC CORP
发明人： TAKAHASHI YOSHIKAZU , IIJIMA MASAYUKI
IPC分类号： C08G73/00 , C08G73/10 , G02F1/133 , G02F1/1337 , G11B7/24
摘要： PURPOSE:To form a liquid crystal orienting film which has a uniform film thickness and exhibits uniform liquid crystal orientability by evaporating the raw material monomer of polyimide in a vacuum, forming the film of a polyamic acid on an electrode surface, exposing the film surface to glow discharge and polymerizing the same to polyimide. CONSTITUTION:Plural sheets of the electrode substrates 1 are contained into a charging chamber 2 and are transferred by each sheet into a vapor deposition chamber 4 where the uniform polyamic acid film 3 is formed to a prescribed thickness on the electrode side surface. The substrates are successively transferred into a discharge treatment chamber 5. Gaseous argon is introduced into the chamber and a DC power source is impressed to electrodes 17, 17 to generate the glow discharge. The surface of the polyamic acid film 3 is exposed to the positive column region thereof. The substrates are then contained successively into a heating chamber 6 where the substrates are heated by a heater 21 to induce the polymn. reaction of polyimide and to form a polyimide film 24 on the electrode side surface of each substrate 1. The substrates are taken out of the heating chamber 6.

82. 发明专利

JPS61219027A FORMATION OF LIQUID CRYSTAL ORIENTING FILM 失效
公开(公告)号：JPS61219027A
公开(公告)日：1986-09-29
申请号：JP5948485
申请日：1985-03-26
申请人： ULVAC CORP
发明人： TAKAHASHI YOSHIKAZU , IIJIMA MASAYUKI
IPC分类号： G02F1/133 , G02F1/1337
摘要： PURPOSE:To form easily a liquid crystal orienting film of a large area which is uniformly subjected to an orientation treatment by exposing the film surface of a polyamic acid to glow discharge then polymerizing the polyamic acid to polyimide. CONSTITUTION:An electrode substrate 6 laminated with the film 5 of the polyamic acid which is the precursor of polyimide on the electrode side surface is supported by a supporting member 7 between electrodes 4 and 4 in such a manner that the surface of the film 5 of the polyamic acid is made approximately horizontal, i.e., approximately horizontal with the electric field direction. The inside of a treatment chamber 1 is evacuated to a vacuum and thereafter gaseous argon is introduced into the chamber 1 through a gas introducing pipe 3 so that the inside of the chamber is maintained under 0.01 Torr. The glow discharge is generated by impressing a DC voltage to the electrodes 4, 4 and the surface of the polyamic acid film 5 is exposed to the positive column thereof by which the laminated polyamic acid is heated to 200-400 deg.C and is polymerized to polyimide. The liquid crystal orienting film of the extremely large area which is entirely free from exfoliation and flawing is thus obtd.

83. 发明专利

JPS61219025A FORMATION OF LIQUID CRYSTAL ORIENTING FILM 失效
公开(公告)号：JPS61219025A
公开(公告)日：1986-09-29
申请号：JP5948285
申请日：1985-03-26
申请人： ULVAC CORP , VICTOR COMPANY OF JAPAN
发明人： TAKAHASHI YOSHIKAZU , IIJIMA MASAYUKI , EGUCHI TOSHIYASU
IPC分类号： G02F1/133 , G02F1/1337
摘要： PURPOSE:To laminate easily liquid crystal orienting films having a uniform film thickness by evaporating a raw material monomer of a heat resistant synthetic resin having an electrical insulating characteristic in a vacuum and polymerizing the same on the electrode side surface of an electrode substrate then subjecting the resulted synthetic resin film to an orientation treatment. CONSTITUTION:Pyromellitic dianhydride is packed into one of vessels 5, 5 for raw material monomers and diaminodiphenyl ether is packed into the other. The inside of a treatment chamber 1 is evacuated to a vacuum while a shutter 14 is held closed. The shutter 14 is opened after heaters 6, 6 are respectively heated. The electrode substrate 8 on a base 9 is successively passed over a slit 10 from one end thereof so that a polyamic acid film having the uniform film thickness is formed on the electrode side surface of the substrate 8. The shutter 14 is closed when the film thickness attains the prescribed thickness; at the same time, the substrate 8 is heated by a heater 11 to induce the polymn. reaction of the polyimide by which the polyimide film is formed on the electrode side of the substrate 8. The film is subjected to the orientation treatment by a suitable method such as blasting treatment by which the liquid crystal orienting film is formed on the substrate 8.

84. 发明专利

JPS6186970A Formation of organic membrane 失效
标题翻译：有机膜的形成
公开(公告)号：JPS6186970A
公开(公告)日：1986-05-02
申请号：JP20617884
申请日：1984-10-03
申请人： Ulvac Corp
发明人： NAKAMURA KYUZO , OOTA YOSHIFUMI , MOMONO TAKESHI , TAKAHASHI YOSHIKAZU , IIJIMA MASAYUKI
IPC分类号： B05D3/06 , C23C14/06 , C23C14/12 , C23C14/24 , C23C14/58
摘要： PURPOSE: To safely and efficiently form a membrane with good quality, by respectively evaporating film forming compositions to precipitate the same on a substrate as a mixture with a desired compositional ratio and subsequently applying ultraviolet curing treatment to the formed film.
CONSTITUTION: A plastic film 3, to which, for example, an aluminum film was vapor-deposited in a vacuum container 1 by the operation of an electron beam evaporation source 12, runs along the periphery of the cooling can 7 in a vacuum container 2 through a guide roller 8, a passing opening 10 and a guide roller 9. Two independent evaporation sources 13, 14 respectively evaporate an oligomer or monomer of an ultraviolet curable resin and a photopolymerization initiator in a desired compositional ratio. A composition is vapor-deposited on the plastic film 3 in a desired thickness by evaporation and subsequently irradiated with ultraviolet rays from a high pressure mercury lamp 15 to continuously produce an org. film. with good quality for protecting a metal film in a consistent process.
COPYRIGHT: (C)1986,JPO&Japio
摘要翻译：目的：为了安全有效地形成质量好的膜，通过分别蒸发成膜组合物以将其沉淀在基材上，以具有所需组成比的混合物，然后对所形成的膜进行紫外线固化处理。构成：通过电子束蒸发源12的操作在真空容器1中蒸镀铝膜的塑料膜3沿真空容器2内的冷却罐7的周边延伸通过引导辊8，通过开口10和引导辊9.两个独立的蒸发源13,14以期望的组成比分别蒸发紫外线固化树脂和光聚合引发剂的低聚物或单体。通过蒸发将组合物蒸镀在所需厚度的塑料膜3上，随后用来自高压汞灯15的紫外线照射，以连续地生成组织。电影。具有良好的质量，用于在一致的过程中保护金属膜。

85. 发明专利

JPS6178463A Formation of synthetic resin film 失效
标题翻译：形成合成树脂膜
公开(公告)号：JPS6178463A
公开(公告)日：1986-04-22
申请号：JP20025784
申请日：1984-09-25
申请人： Ulvac Corp
发明人： IIJIMA MASAYUKI , TAKAHASHI YOSHIKAZU
IPC分类号： C08F2/00 , B05D1/00 , C08J7/04 , C23C14/12 , C23C14/24
摘要： PURPOSE: To form a dense high purity uniform thin film with good close adhesiveness, in forming a thin film to a semiconductor element, by evaporating a stock monomer of a synthetic resin under vacuum to polymerize the same on a substrate.
CONSTITUTION: In forming a polyimide film or a polyamide film, the total pressure of the atmospheric gas in a treatment chamber 1 is set to about 1×10
-2 W1×10
-6 Torr through an evacuation system 2. Next, evaporation tubes 6 are respectively filled with stock monomers (a), (b) in such a state that a shutter 10 is closed and heated to appropriate temps. by heaters 7 while temps. are measured by thermocouples 11. Subsequently, the stock monomers (a), (b) reach required temps. and begin to evaporate and, thereafter, the shutter 10 is opened and the stock monomers (a), (b) are accumulated on a substrate 5 at predetermined precipitation temp. and polymerization reaction is performed on the substrate 3 at room temp. or appropriately raised temp.
COPYRIGHT: (C)1986,JPO&Japio
摘要翻译：目的：为了形成具有良好密合性的致密高纯度均匀薄膜，在将半导体元件形成薄膜时，通过真空蒸发合成树脂的原料单体，使其在基板上聚合。构成：在形成聚酰亚胺膜或聚酰胺膜时，处理室1中的气氛气体的总压力通过抽气系统2设定为约1×10 -2 -1×10 -6 Torr。接下来，蒸发管 6分别充满库存单体（a），（b），使得快门10关闭并加热到合适的温度。加热器7，同时温度。通过热电偶11测量。随后，原料单体（a），（b）达到所需的温度。开始蒸发，之后打开快门10，并且以预定的沉淀温度将原料单体（a），（b）在基板5上堆积。在室温下在基板3上进行聚合反应。或适当升温

86. 发明专利

JPS55161825A FORMATION OF ANTIREFLECTION COATING OF LENS MADE FROM SYNTHETIC RESIN 失效
公开(公告)号：JPS55161825A
公开(公告)日：1980-12-16
申请号：JP6945679
申请日：1979-06-05
申请人： ULVAC CORP
发明人： TAKAHASHI YOSHIKAZU , NAKAMURA KAZUO
IPC分类号： B29C39/00 , B29C61/00 , B29D11/00 , C23C14/00 , C23C14/06 , C23C14/20 , G02B1/10 , G02B1/11 , G02B1/113 , G02B1/14
摘要： PURPOSE:To form an antireflection coating having excellent wear resistance, by a method wherein glow discharge is generated by means of a probe high-frequency power source in a treating chamber to activate MgF2 vapor which is then deposited on a lens made from a synthetic resin, the surface of the lens being coated with glass. CONSTITUTION:The interior of a treatig chamber 1 is kept at a high vaccum of 1X10 -6X 10 Torr by means of Ar, O2 or other gases. At the lower part of the treating chamber 1 there is provided an evaporating source 5 for MgF2 which is irradiated by means of the output electron beam of an electron gun 3. At the upper part of the chamber 1 there is provided a lens 6 made from a synthetic resin. The surface of the lens is previously coated with a glass 6a. There is provided a probe 8 between the lens and the evaporating source. A high-frequency power source 10 is externally provided and has an output of 0.4-3kW. By the action of the high-frequency source on the probe 8, glow discharge is generated within the treating chamber 1 to activate the vapor of the evaporating source 5, and the vapor is deposited on the surface of the lens 6. Then the lens 6 is kept at 90 deg.C for not less than 12hr to form an antireflection coating having excellent resistance to hot water on the lens 6 made from a synthetic resin.

87. 发明专利

JP2006225565A METHOD FOR FORMING ORGANIC PIEZO- AND PYRO-ELECTRIC FILM MEMBRANE 审中-公开
公开(公告)号：JP2006225565A
公开(公告)日：2006-08-31
申请号：JP2005043029
申请日：2005-02-18
申请人： ULVAC CORP , POLYMATECH CO LTD
发明人： TAKAHASHI YOSHIKAZU , SHIMOYAMA NAOYUKI , AOKI HISASHI
IPC分类号： C08J7/00 , C08G18/32 , C08L101/00 , H01L41/193 , H01L41/45
摘要： PROBLEM TO BE SOLVED: To provide a method for forming an organic piezo- and pyro-electric film capable of surely performing a poling treatment of polyurea membrane formed on a substrate without damaging the substrate and also without producing insulation breakage in the polyurea membrane. SOLUTION: This method for forming the organic piezo- and pyro-electric film is characterized by forming the polyurea membrane on the substrate by performing a vapor-depositing polymerization of a diamine with diisocyanate, heating the polyurea membrane at 80-130°C and also impressing a magnetic field to apply the poling treatment on the polyurea membrane. COPYRIGHT: (C)2006,JPO&NCIPI

88. 发明专利

JP2002256090A SURFACE TREATMENT METHOD FOR PLASTIC MOLDED PRODUCT, ITS APPARATUS, AND PRODUCTION METHOD FOR PLASTIC MOLDED PRODUCT WITH VAPOR-DEPOSITTED FILM FORMED 失效
公开(公告)号：JP2002256090A
公开(公告)日：2002-09-11
申请号：JP2001056782
申请日：2001-03-01
申请人： ULVAC CORP
发明人： TAKAHASHI YOSHIKAZU , IIJIMA MASAYUKI , NAGASAWA TAKAYUKI , AOKI SHINOBU
IPC分类号： C08J7/02 , C23C14/02
摘要： PROBLEM TO BE SOLVED: To provide a surface treatment method for a plastic molded product, capable of controlling an absorbing quantity of solvent in this product, to provide its surface treatment apparatus, and to provide a production method for a plastic molded product wherein a vapor-deposited film is formed with good adhesion. SOLUTION: A surface-treatment apparatus for the plastic molded product is composed of a vacuum chamber 1, a vessel 6 containing a chlorine-based solvent or a petroleum-based solvent, and an evacuation system 3. A surface of the plastic molded product is treated with a solvent vapor introduced in the vacuum chamber 1 with required vacuum atmosphere, for a duration wherein molecules of the above solvent is well absorbed on the surface of the above plastic molded product.

89. 发明专利

JP2000003910A FORMATION OF LOW SPECIFIC INDUCTIVE CAPACITY INSULATING FILM AND INTERLAYER INSULATING FILM 失效
公开(公告)号：JP2000003910A
公开(公告)日：2000-01-07
申请号：JP16762898
申请日：1998-06-16
申请人： ULVAC CORP
发明人： IIJIMA MASAYUKI , SATO MASATOSHI , UKISHIMA YOSHIYUKI , TAKAHASHI YOSHIKAZU
IPC分类号： C08G73/10 , H01L21/31 , H01L21/312 , H01L21/768 , H01L23/522
摘要： PROBLEM TO BE SOLVED: To provide a forming method of a low specific inductive capacity insulating film having the characteristic hardly diffusing in copper and especially suitable for the interlayer film of a semiconductor device. SOLUTION: In order to evaporate a diamine monomer and a acid component monomer as material monomers in vacuum for the formation of a polyimide film by evaporatively polymerize these material monomers on a base substance, the material monomers containing no acid atoms at all excluding an imide ring are used. At this time, as for the diamine monomer, 3,3-dimethyl-4,4'- diamino biphenyl (OTD), 2,2'-bis (trifluoromethyl)-4,4'-diamino biphenyl (TFDB) are used while as for the acid component monomer, a pyrometric acid bianhydride, 2,2'-bis (3,4-dicarboxy phenyl) hexafluoro propane bianhydride (6FDA) are used. Through these procedures, a barrier layer such as TiN, etc., need not be formed between the first and second copper wirings 23, 26 and an interlayer insulating film 24.

90. 发明专利

JPH11289011A LOW-RELATIVE-DIELECTRIC CONSTANT INSULATING FILM, FORMATION THEREOF, AND INTERLAYER INSULATING FILM 失效
公开(公告)号：JPH11289011A
公开(公告)日：1999-10-19
申请号：JP8913498
申请日：1998-04-02
申请人： ULVAC CORP
发明人： IIJIMA MASAYUKI , SATO MASATOSHI , UKISHIMA YOSHIYUKI , TAKAHASHI YOSHIKAZU , YAMAKAWA HIROYUKI
IPC分类号： C08J7/00 , B32B9/00 , B32B27/00 , B32B37/00 , C08G73/10 , H01L21/312 , H01L21/768 , H01L23/522 , B32B31/00
摘要： PROBLEM TO BE SOLVED: To provide a low-relative-dielectric constant insulating film which can have stable characteristics, a high adhesion to a metallic wiring layer and a high resistance to plasma, and can be suitably used as an interlayer insulating film. SOLUTION: The low-relative-dielectric constant insulating film includes a semiconductor substrate 21, an aromatic polyimide film 25 formed on the substrate 21 and containing a predetermined amount of fluorine, and inorganic insulating films 24A and 24B having a thickness of 1/10 or less (100 nm or less) of a thickness of the polyimide film 25 and formed on both surfaces of the film 25 as closely adhered thereto. The inorganic insulating films contain one or more selected from a group of SiO2 , Si3 N4 and glass.

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