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    • 81. 发明专利
    • Probe for low temperature
    • 低温探头
    • JPS61107168A
    • 1986-05-26
    • JP22771484
    • 1984-10-31
    • Hitachi Ltd
    • ISHINO MASAKAZUTANAKA MINORU
    • G01R31/26G01R1/067H01L21/66
    • PURPOSE: To measure the electrical characteristics of high frequency with high accuracy by removing the freezing of humidity on the surface of a specimen by preventing air leaked to the surface of the specimen from directly impinging to the specimen, by providing an air vent hold to the shield material of a coaxial probe.
      CONSTITUTION: A low temp. bath 3 and a specimen 4 are arranged on the stage stand 1 of a low temp. probe 6 and the probe 6 is attached to a lid 5 and a core wire 8 is arranged in a shield material 7. A plurality of holes 10 are provided to the shield material 7 in the vicinity of the inside of the side wall part of the lid 5 having the probe 6 attached thereto. If the coaxial probe having this structure is used, the open air leaked into a vacuum container 9 from the gap between the shield material 7 and the core wire 8 is discharged through the holes 10. By this method, the open air is prevented from directly impinging against the low temp. specimen.
      COPYRIGHT: (C)1986,JPO&Japio
    • 目的:通过防止样品表面泄漏的空气直接撞击样品,通过除去试样表面的湿气,从而高精度地测量高频电气特性,通过向 同轴探头的屏蔽材料。 构成:低温 浴3和样品4布置在低温的台架1上。 探头6和探针6安装在盖5上,芯线8设置在屏蔽材料7中。多个孔10设置在屏蔽材料7的靠近侧壁部分的内侧 具有附接到其上的探针6的盖子5。 如果使用具有这种结构的同轴探针,则从屏蔽材料7和芯线8之间的间隙泄漏到真空容器9中的露天孔通过孔10排出。通过这种方法,可以直接防止露天 冲击低温 标本。
    • 83. 发明专利
    • MATCHING DEVICE OF WATER
    • JPS6081613A
    • 1985-05-09
    • JP18840283
    • 1983-10-11
    • HITACHI LTD
    • NAKAJIMA NAOTOTANAKA MINORUAIUCHI SUSUMUKAWARADA MASAYUKI
    • H01L21/68G03F9/00G05D3/12H01L21/67
    • PURPOSE:To prevent wafer from chipping or the like and to improve the yield of an LSI chip by detecting an outer edge position on the periphery of the wafer contactlessly and matching the orienteering flat direction and the position of a turning center of the wafer with the prescribed direction and position. CONSTITUTION:A DELTAtheta stage to be vibrated around the z axis is put on a stage to be moved in the X and Y axis directions and then a theta stage 36 to be rotated one revolution or more is arranged on the DELTAtheta stage so that their turning axes coincide with each other. A wafer outer edge position detector 42 consisting of a lamp 43, a lens 44, a mirror 45, a cylindrical lens 46, and a line image sensor 47 is arranged on the theta stage 36 and the detected value of the detector 42 is stored and calculated. The outer edge part of the wafer 41 is detected at three points e.g. except the orienteering flat part and the eccentricity to the stage 36 of the wafer 41 is detected from said detected result. The eccentric value is matched with the direction of the orienterring flat of the wafer and then matched with the movement of an XY table.
    • 84. 发明专利
    • MICROSCOPE DEVICE
    • JPS6067916A
    • 1985-04-18
    • JP17430883
    • 1983-09-22
    • HITACHI LTD
    • KUBOTA HITOSHITANAKA MINORUAIUCHI SUSUMUHARA YASUHIKO
    • G02B21/10
    • PURPOSE:To prevent a position shift due to a temperature rise and obtain bright lighting for a dark visual field by projecting light from a light source for dark visual field lighting which is installed on the extension of the optical axis of an objective lens through two rotary parabolic mirrors provided facing each other. CONSTITUTION:The light from the light source lamp 12 is reflected by the 1st rotary parabolic mirror 14 to obtain cylindrical parallel luminous flux, which is further reflected by the 2nd rotary parabolic miror 15 to illuminate the circumference of the visual fiedl of the objective lens 16 slantingly. Reflected light from an object 17 of observation is magnified by the objective lens 16, changed in direction by 90 deg. through a reflecting mirror 20, and passes through holes 18b and 21a, and the light is bent upward at right angles through a half-mirror 24, and magnified through an image forming lens 27 to form its image on a photoelectric converter 28. When vertical lighting is employed in combination with the dark visual field lighting, a lamp 25 for light visual field lighting is used and light passed through the half-mirror 24 and reflecting mirror 20 is guided into the objective lens 16 to illuminate the object 17 of observation.
    • 86. 发明专利
    • Vapor deposition source for vacuum deposition
    • 蒸气沉积源用于真空沉积
    • JPS58207371A
    • 1983-12-02
    • JP8792482
    • 1982-05-26
    • Hitachi Ltd
    • KUBOTA HITOSHITANAKA MINORUAIUCHI SUSUMU
    • C23C14/24C23C14/30
    • C23C14/30C23C14/24
    • PURPOSE:To enable the vapor deposition of plural vapor deposition materials on a substrate freely to a uniform thickness in a vacuum deposition device, by instaling crucibles for contg. the vapor deposition materials rotatably with respect to the substrate to be vapor deposited thereon with said materials. CONSTITUTION:A substrate as a material to be vapor deposited thereon with vapor deposition materials is placed in a vacuum vessel for vapor depoition, and a rotary table 23 installed on a revolving shaft 27 is disposed below the same. A vapor deposition source provided with plural crucibles 6a contg. vapor deposition materials 6 and having a filament 7 for irradiation of an electron beam is installed on the table 23. In the stage of vapor deposition, the crucibles 6a are rotated by the operation of a motor 32 so that the crucible contg. the required material 6 is positioned in the position where the electron beam is to be irradiated. While the table 23 is rotated by driving a motor 39, the material 6 is melted and evaporated by the electron beam so as to be vapor deposited on the substrate. The crucibles contg. the vapor deposition materials are rotated while the substrate is held fixed, whereby the vapor deposition materials are vapor deposited on the substrate to a uniform thickness.
    • 目的:为了使真空沉积装置中的多个气相沉积材料在基板上自由沉积到均匀的厚度,可以通过安装坩埚来进行。 气相沉积材料相对于基底可旋转地被其上沉积有所述材料。 构成:将作为气相沉积材料的基板作为气相沉积材料放置在真空容器中进行蒸汽吸收,并且安装在旋转轴27上的旋转台23设置在其下方。 设置有多个坩埚6a的气相沉积源 气相沉积材料6并具有用于照射电子束的细丝7安装在工作台23上。在蒸镀阶段,坩埚6a通过电动机32的操作而转动, 所需材料6位于要照射电子束的位置。 当通过驱动马达39使台23旋转时,材料6被电子束熔化并蒸发,以便气化沉积在基底上。 坩埚 气相沉积材料在保持固定基板的同时旋转,由此气相沉积材料在基板上气相沉积到均匀的厚度。