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    • 72. 发明专利
    • CONNECTING DEVICE FOR LIQUID CIRCULATING PIPE
    • JPH06174199A
    • 1994-06-24
    • JP35350092
    • 1992-12-14
    • SONY CORP
    • KAKINUMA MASAYASUISHIKAWA HIROYUKIKIN YASUNORI
    • F17D1/08F16L55/07
    • PURPOSE:To prevent liquid from leaking out and scattering by constituting a device such that residual fluid in a fluid circulating pipe can be extruded to a tank side by blowing compressed air after closing an opening/closing valve in each fluid circulating pipe when detached a connector provided in each connecting end of the paired fluid circulating pipes. CONSTITUTION:In the case of applying to a device for performing delivery of cooling water, when separated a supply side unit P of cooling water from a receiving side unit Q of cooling water, first solenoid valves 5, 6, 12, 13 are closed, to stop circulating the cooling water. Next, solenoid valves 25, 26 of cooling water residual discharge pipes 23, 24 are opened, and also opening a solenoid valve 22 of a compressed air blow pipe 19. In this way, compressed air from a compressed air source 20 is blown into a water supply pipe 8 and a drain pipe 9, left with liquid, through connectors 21, 18 and check valves 16, 17, and the residual liquid is extruded toward the supply side P to flow out into a tank 27 via the residual liquid discharge pipes 23, 24. And then, the solenoid valves 22, 25, 26 are closed to respectively separate connectors 3, 10; 4, 11; 21, 18.
    • 76. 发明专利
    • SPUTTERING CATHODE AND SPUTTERING SYSTEM
    • JP2000313957A
    • 2000-11-14
    • JP12009699
    • 1999-04-27
    • SONY CORP
    • OMI MOTOSUKEKAKINUMA MASAYASUKAWASHIMA TOSHITAKA
    • H01L21/203C23C14/35
    • PROBLEM TO BE SOLVED: To provide a sputtering cathode in which the region of a magnetic flux parallel to the face of a target is widen without increasing its scale, the utilizing effeiciency of the target is improved, and film formation can be executed at a high speed with high efficiency and high uniformity and to provide a sputtering system. SOLUTION: In a cathode housing 6, the back sides of a target 4 and a backing plate 5 are deposited with inner circumferential magnets 10 and outer circumferential magnets 11. In this depositing constitution, the cylindrical inner circumferential magnets 10 are deposited slantly to the inside and the cylindrical outer circumferential magnets 11 to the outside by plural pieces on the circumference, and they are fitted to a magnet fitting board. The surfaces of the edge parts of the mutual magnetic poles of the inner circumferential magnets 10 and the outer circumferential magnets 11 have reverse polarity. The magnetic flux goes out from the inner circumferential magnet 10, once widens, goes out from the surface of the target 4, again widens and progresses toward the outer circumferential magnet 11.
    • 77. 发明专利
    • LOCAL VACUUM TREATING APPARATUS
    • JP2000311882A
    • 2000-11-07
    • JP12063299
    • 1999-04-27
    • SONY CORP
    • KAKINUMA MASAYASUKAWASHIMA TOSHITAKA
    • H01L21/302H01L21/3065
    • PROBLEM TO BE SOLVED: To obtain a local vacuum treating apparatus with a structure, where a stable vacuum treatment can be performed to a material to be worked, the cycle time for vacuum treatment is also comparatively short, and is simple in the structure. SOLUTION: A material 1 to be worked is positioned at a prescribed position, and after that an inert gas is introduced from an inert gas inlet vent 6 into a vacuum bath 3 and in a state that the air pressure in the tank 3 is increased higher than the atmospheric pressure, an arm 13 of a valve part 10 is rotated in the counterclockwise direction by 90 degrees centered around a fulcrum shaft 12 to make a valve body 11 separate from an aperture 2, the bath 3 is descendingly moved to the position of the material 1 to shut the aperture 1 with the material 1, and after that, etching of the projected region part of the aperture 2 on the material 1 is performed. Then, in a state in which inert gas is introduced from the vent 6 into the tank 3 and the air pressure in the tank 3 is increased higher than the atmospheric pressure, the arm 13 is rotated in the clockwise direction by 90 degrees, and the valve body 11 is closely adhered uniformly to an O-ring 7 to shut the aperture 2. For this, the surface of an electrode part 5 is not oxidized by oxygen in the atmosphere.
    • 78. 发明专利
    • DEPOSITION APPARATUS
    • JP2000017437A
    • 2000-01-18
    • JP18637298
    • 1998-07-01
    • SONY CORP
    • ISHIKAWA HIROKAZUKAKINUMA MASAYASU
    • C08J7/06C23C14/10C23C14/54C23C14/56
    • PROBLEM TO BE SOLVED: To provide a deposition apparatus capable of depositing an adhesive layer having sufficient adhesive power and good transmittance by maintaining a low partial pressure of the moisture in a deposition chamber. SOLUTION: This apparatus has a cooling drum 7 for cooling a roll film 5 by bringing the film into contact with the surface in the central part of a sputtering chamber 3. A roll chamber 9, an SiOx deposition chamber 11 and a monitor chamber 13 are arranged on the circumference of the drum 7. A sputtering cathode 27 is arranged in the SiOx deposition chamber 11 and a pump 29 for moisture, such as cryogenic panel, for powerfully discharging the moisture is arranged in the deposition chamber 11, by which the partial pressure of the moisture in the deposition chamber 11 is maintained low. The absorption of the light of the SiOx film after the deposition is moistored by an in-situ transmitted light monitor 35 and the value (x) of the SiOx film is judged from the transmittance of the light of the SiOx film. An oxygen flow rate is regulated by an MFC 33 in such a manner that the value of (x) attains a desired value. As a result, the adhesive layer having the sufficient adhesive power and the good transmittance may be deposited on the substrate.