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71. 发明专利

JPH06122556A SINTERED COMPACT OF SILICEOUS NITRIDE AND ITS PRODUCTION 失效
公开(公告)号：JPH06122556A
公开(公告)日：1994-05-06
申请号：JP27279392
申请日：1992-10-12
申请人： MITSUBISHI HEAVY IND LTD
发明人： AKIYAMA KATSUNORI , HIRATA TAKEHIKO , MURAKAMI YUICHIRO , YAMAMOTO HIROICHI
IPC分类号： C04B35/584 , C04B35/58
摘要： PURPOSE:To obtain a sintered compact of siliceous nitride useful for a mechanical part requiring high temperature, high strength, oxidation resistance, etc. CONSTITUTION:A sintered compact of siliceous nitride has a composition consisting of 80-97wt.% silicon nitride, 0.5-10wt.% aluminum oxide and 2-15wt.% yttrium oxide and comprises grain boundary parts, gaps between silicon nitride particles in the sintered compact comprised of texture made of crystallite of Y2SiO3N4 or Si2N2O, stable crystaline glass. A mixture obtained by blending 80-97wt.% silicon nitride with 0.5-10wt.% aluminum oxide and 2-15wt.% yttrium oxide, having 2mum or shorter, is molded, burnt in a nitrogen gas atmosphere at 1,500-2,000 deg.C, the temperature is dropped to 900-970 deg.C range at 20 deg.C/minute rate and the burnt material is kept for 5 minutes or longer and reheated to 1,200-1,300 deg.C and maintained for two hours or longer.

72. 发明专利

JPH04119941A PRODUCTION OF CRYSTALLIZED GLASS 失效
公开(公告)号：JPH04119941A
公开(公告)日：1992-04-21
申请号：JP23439790
申请日：1990-09-06
申请人： MITSUBISHI HEAVY IND LTD
发明人： MURAKAMI YUICHIRO , YAMAMOTO HIROICHI
IPC分类号： C03C10/02
摘要： PURPOSE:To obtain a crystallized glass having heat resistance and high hardness by subjecting a crystallized glass components composed essentially of SiO2, Al2O3, and Y2O3, and containing specific metal oxides as nucleating agents to melting and then to slow cooling. CONSTITUTION:Crystallized glass components which has a composition containing, by weight, 5-50% SiO2, 5-70% Al2O3, and 10-70% Y2O3 as essential components and also containing 0.1-30% of one or more additives among MgO, TiO2, ZrO2, La2O3, etc., as nucleating agents are melted and slowly cooled, or a melt prepared by melting is rapidly cooled, and the resulting glass is subjected to heat treatment at 900-1250 deg.C for

73. 发明专利

JPH0312973A AMORPHOUS THIN FILM SOLAR CELL 失效
公开(公告)号：JPH0312973A
公开(公告)日：1991-01-21
申请号：JP14803489
申请日：1989-06-09
申请人： MITSUBISHI HEAVY IND LTD
发明人： MORITA SHOJI , MURAKAMI YUICHIRO
IPC分类号： H01L31/04
摘要： PURPOSE:To arrest the reduction of a transparent electrode and obtain a high electric characteristic by interposing a metal or metallic silicide layer between said transparent electrode and a p-layer and mixing microcrystals in said p- layer. CONSTITUTION:The present invention comprises glass substrate 1, a transparent electrode 2, a p-layer 4, an i-layer 5, an n-layer 6, and metal electrodes 7. A metal or metallic silicide layer 3 is interposed between the transparent electrode 2 and the p-layer 4 and microcrystals are mixed in the p-layer 4. The thin metal layer 3 is thus formed on the transparent electrode 2 and then p-, i-, and n-layers 4-6 are thus formed in that order, therefore, the transparent electrode 2 does not come into direct contact with hydrogen plasma. Therefore, fewer metallic impurities diffuse and mix in an amorphous layer. The high- conductivity amorphous p-layer 4 containing microcrystals reduces the series resistance. Thereby the reduction of the transparent electrode is arrested and a high electric characteristic is obtained.

74. 发明专利

JPH02116121A MANUFACTURE OF COMPOUND SEMICONDUCTOR THIN FILM 失效
公开(公告)号：JPH02116121A
公开(公告)日：1990-04-27
申请号：JP26816788
申请日：1988-10-26
申请人： MITSUBISHI HEAVY IND LTD
发明人： MURAKAMI YUICHIRO , MORITA SHOJI , YONEKURA YOSHIMICHI
IPC分类号： C23C14/24 , H01L21/208
摘要： PURPOSE:To enable even a thin film of multi-component compound semiconductor to be produced relatively simply and different kinds of compound semiconductor thin films to be produced easily by supplying a compound semiconductor fine powder to a heated crucible intermittently in a specified state. CONSTITUTION:A material fine powder is put into fine powder retaining holes 2 and 3 which are provided at a rotary disc 1 and the disc 1 is rotated to allow fine power to be dropped from a lower port 5 to a tray 6 when the hole 2 agrees with a disc retaining plate 4. The tray 6 is vibrated pulsively through a vibration mechanism connection part 9 and a tray supporting bar 8 and is dropped to a crystal pipe funnel 12 through a slit mechanism 7 of the tray 6, thus being supplied to a crucible 13. Fine powder rapidly heated by the crucible 13 evaporates instantaneously, is heated by a substrate heating mechanism 17, and is deposited to a glass substrate 16 which is heated by a substrate heating mechanism 17 and is maintained at a constant temperature. After fine power is completely evaporated in the crucible 13, the disc 1 is rotated and fine powder of the next hole 3 is supplied to the crucible 13.

75. 发明专利

JPH01192715A PRODUCTION OF ULTRAFINE PARTICLES AS RAW MATERIAL OF SILICON CARBIDE SINTERED FORM 失效
公开(公告)号：JPH01192715A
公开(公告)日：1989-08-02
申请号：JP1369788
申请日：1988-01-26
申请人： MITSUBISHI HEAVY IND LTD
发明人： MURAKAMI YUICHIRO , YAMAMOTO HIROICHI , ONO SHUJI
IPC分类号： C01B31/36 , C04B35/565
摘要： PURPOSE:To obtain composite ultrafine particles of SiC nature with B or B4C ultrafine particles as the sintering aid homogeneously dispersed in SiC ultrafine particles, by simultaneously heating a SiC fine particle raw material and a raw gas for producing B or B4C through a hot plasma to make a reaction followed by quenching. CONSTITUTION:Silicon carbide fine particles with an average size of

76. 发明专利

JPS63313872A FORMATION OF AMORPHOUS THIN-FILM 失效
公开(公告)号：JPS63313872A
公开(公告)日：1988-12-21
申请号：JP14922187
申请日：1987-06-17
申请人： MITSUBISHI HEAVY IND LTD
发明人： MORITA SHOJI , MURAKAMI YUICHIRO
IPC分类号： H01L21/205 , H01L31/04
摘要： PURPOSE:To inhibit optical deterioration by forming the interface of P-layer/I- layer by using a plasma ion bombardment relaxing means. CONSTITUTION:A P layer 3 is shaped, the inside of a reaction vessel 16 is exhausted, a raw material gas (silane) for an I layer 4 is introduced, and the I layer 4 is formed for a fixed time through the same method as the P layer 3. A DC bias (a direct current bias) is loaded between a susceptor 14 and a specified position in a gas introducing port 18 so that the susceptor 14 is brought to positive charges by a DC power 22 at the same time as discharge starting at that time. The time loading the DC bias depends upon the conditions of film formation, but approximately 5-10% of the film formation time of the I layer at the initial stage of the formation of the I layer is proper. Consequently, when the interface of P-layer/I-layer is shaped, a means in which bombardment to a film forming surface by the ions of H , SiH , etc., existing in plasma is relaxed is adopted. thus decreasing defects near the interface, then improving the characteristics of the interface of P-layer/I-layer. Accordingly, the optical deterioration of an element is inhibited.

77. 发明专利

JPS63117949A MANUFACTURE OF ALUMINA BASE CERAMICS 失效
公开(公告)号：JPS63117949A
公开(公告)日：1988-05-21
申请号：JP26200686
申请日：1986-11-05
申请人： MITSUBISHI HEAVY IND LTD
发明人： MURAKAMI YUICHIRO , YAMAMOTO HIROICHI , ONO SHUJI , TSUNODA HIDEO
IPC分类号： C04B35/10

78. 发明专利

JPS62265171A SINTERED BODY 失效
公开(公告)号：JPS62265171A
公开(公告)日：1987-11-18
申请号：JP10775186
申请日：1986-05-13
申请人： MITSUBISHI HEAVY IND LTD
发明人： TSUNODA HIDEO , MOTOMURA HIKARI , MURAKAMI YUICHIRO , YAMAMOTO HIROICHI
IPC分类号： C04B35/626 , C04B35/56 , C04B35/58

79. 发明专利

JPS62265170A MANUFACTURE OF SINTERING AID 失效
公开(公告)号：JPS62265170A
公开(公告)日：1987-11-18
申请号：JP10775086
申请日：1986-05-13
申请人： MITSUBISHI HEAVY IND LTD
发明人： TSUNODA HIDEO , MOTOMURA HIKARI , MURAKAMI YUICHIRO , YAMAMOTO HIROICHI
IPC分类号： C04B35/626 , C04B35/56 , C04B35/58

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