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71. 发明专利

JPH0737442A OXIDE SUPERCONDUCTOR AND PREPARATION OF SUPERCONDUCTOR THEREOF 失效
公开(公告)号：JPH0737442A
公开(公告)日：1995-02-07
申请号：JP15544493
申请日：1993-06-25
申请人： SUMITOMO ELECTRIC INDUSTRIES , TOHOKU ELECTRIC POWER CO , MATSUSHITA ELECTRIC IND CO LTD , KOKUSAI CHODENDO SANGYO GIJUTS
发明人： ITO MUTSUMI , YAMAMOTO FUMIKO , IZAWA KAZUYUKI , ADACHI SEIJI , YAMAUCHI HISAO , TANAKA SHOJI
IPC分类号： C01G1/00 , C01G13/00 , C04B35/00 , C04B35/45 , H01B12/00 , H01B13/00 , H01L39/12 , H01L39/24
摘要： PURPOSE:To provide Hg-Ba-Ca-Cu-O-type oxide superconductor having superconductor transition temperature Tc=134K and provide a preparation method to produce the superconductor with good reproducitivity. CONSTITUTION:A preparation method to produce an oxide superconductor consisting of mercury, Ba, Ca, copper, and oxygen and having a chemical formula (Hg1-xCux)Ba2Ca2Cu3Oy wherein x stands for 0.05-0.7, y for 8-8.75 is provided, The preparation method involves a step to mix raw materials of mercury, Ba, Ca, and copper at ratios to give the mole ratios; (Hg+Ba):Ca:Cu=b:1:c, Hg:Ba=(1-a):a; wherein 0.625

72. 发明专利

JPH0733589A SEED USED FOR PREPARING OXIDE CRYSTAL HAVING Y123 TYPE CRYSTAL STRUCTURE FROM MELT 失效
公开(公告)号：JPH0733589A
公开(公告)日：1995-02-03
申请号：JP18471393
申请日：1993-07-27
申请人： KOKUSAI CHODENDO SANGYO GIJUTS , ASAHI GLASS CO LTD , MITSUBISHI CABLE IND LTD , HITACHI CABLE , HOKKAIDO ELECTRIC POWER , KYUSHU ELECTRIC POWER , KANSAI ELECTRIC POWER CO , ISHIKAWAJIMA HARIMA HEAVY IND , FUJIKURA LTD
发明人： YAMADA YASUSHI , NAKAMURA MASARU , TATSUMI NORIYUKI , TSUJINO JIRO , OOTSU KANJI , KANAMORI YASUO , TAGAMI MINORU , KUME ATSUSHI , SHIOBARA TORU , TANAKA SHOJI
IPC分类号： C01G1/00 , C01G3/00 , C30B15/00 , C30B15/36 , C30B29/22 , H01B12/06 , H01B13/00 , H01L39/24
摘要： PURPOSE:To suppress the crawling up of a melt in growing a crystal and readily obtain the single crystal by laminating an oriented film of ReBa2Cu3Oy having a Y123 type crystal structure on a substrate. CONSTITUTION:A substrate is preferably an oxide containing an alkaline earth metal (e.g. Mg) as a constituent element and a material without wetting with a melt of a barium-copper oxide. Various orienting directions of the crystal axis can be adopted in the oriented film. The crystallinity of this Y123 type crystal film depends on the thickness of the oriented film and the thickness is preferably 0.01-1mum. The oriented film is laminated by a plasma vapor deposition method. Specifically, an oxide raw material powder of Y-Ba-Cu-0 is fed into a high-frequency plasma and evaporated and the resultant vapor is then deposited on the surface of the substrate. The seed for growing the crystal of ReBa2Cu3Oy [Re is either of Y or lanthanoid; (y) is the amount of oxygen] is obtained by laminating an oriented film of the ReBa2Cu3Oy having the Y123 type crystal structure on the substrate. In this case, the crystal having good orienting properties is obtained even when the oriented film is not always completely oriented.

73. 发明专利

JPH0717790A PRODUCTION OF SM 123 CRYSTAL 失效
公开(公告)号：JPH0717790A
公开(公告)日：1995-01-20
申请号：JP16226493
申请日：1993-06-30
申请人： KOKUSAI CHODENDO SANGYO GIJUTS , ISHIKAWAJIMA HARIMA HEAVY IND , KYUSHU ELECTRIC POWER , MITSUBISHI CABLE IND LTD , ASAHI GLASS CO LTD
发明人： TAGAMI MINORU , OOTSU KANJI , NAKAMURA MASARU , YAMADA YASUSHI , SHIOBARA TORU , TANAKA SHOJI
IPC分类号： C30B15/02 , C30B29/22 , H01L39/12
摘要： PURPOSE:To continuously obtain a large oxide crystal by using a liquid phase of a specific compsn. enclosing the oxide of an Sm 211 structure at a point apart from a crystal growth position and growing an oxide crystal of the Sm 123 structure. CONSTITUTION:Sm2BaCuO5 12 is put into the lower part a crucible 11 and the liquid phase 13 obtd. by calcining a mixture composed of barium carbonate of about 3:7 molar ratio of Ba:Cu and copper oxide is put thereon. This crucible 11 is then heated in a heating furnace 16 and a seed crystal rod 15 consisting of SmBa2Cu3O7-x is brought into contact with the liquid surface of the liquid phase 13. While the seed crystal rod 15 is kept rotated, this rod is pulled up allow the crystal 14 of the SmBa2Cu3O7-x to continuously grow in a vertical direction. As a result, the large oxide crystal of the Sm 123 structure having the different compsns. of the solid phase and the liquid phase is produced by using the liquid phase contg. the oxide enclosing the Sm 211 structure at the point apart from the position to allow the crystal to grow and having the compsn. different from the compsn. of the oxide crystal is produced.

74. 发明专利

JPH06321694A PRODUCTION OF MULTILAYERED FILM LAMINATE OF Y123 TYPE CRYSTALLINE FILM 失效
公开(公告)号：JPH06321694A
公开(公告)日：1994-11-22
申请号：JP10857193
申请日：1993-05-10
申请人： KOKUSAI CHODENDO SANGYO GIJUTS , ASAHI GLASS CO LTD , ISHIKAWAJIMA HARIMA HEAVY IND , MITSUBISHI CABLE IND LTD
发明人： YAMADA YOUJI , TAGAMI MINORU , NAKAMURA MASARU , SHIOBARA TORU , TANAKA SHOJI
IPC分类号： C01G3/00 , C01G1/00 , C30B29/22 , H01L39/02
摘要： PURPOSE:To easily provide the multilayered film laminate of oxide crystals of a Y123 type crystalline structure having good quality with the inexpensive device by using the melt of specific compds. as a solvent and transporting solute through this solvent to a substrate. CONSTITUTION:A material 2 which is a material constituted of elements constituting the desired oxide crystals and contains the constituting element corresponding to Y at the same concn. as the concn. of the element within the oxide crystals or at a higher concn. than this concn. is put into the lower part in a crucible 1 and a material 3 which is obtd. by mixing BaCO3 and CuO so as to attain 60 to 80% molar ratio of Ba and Cu, then calcining the mixture for about 40 hours at 880 deg.C as BaO or CuO alone to be the solvent or the mixture melt thereof is put into the upper part thereof. The crysible 1 is electrically heated to about 1000 deg.C by a high-frequency induction coil 7. The solute supply material in the lower part melts and the solute in the upper part maintains a liquid state and is brought into contact with the substrate 4. The oxide crystalline films having the Y123 type crystalline structure are precipitated and grown as primary crystals and further the multilayered film laminate is obtd.

75. 发明专利

JPH06321677A HOLDING METHOD OF FUSED LIQUID OF OXIDE 失效
公开(公告)号：JPH06321677A
公开(公告)日：1994-11-22
申请号：JP10857093
申请日：1993-05-10
申请人： KOKUSAI CHODENDO SANGYO GIJUTS , ASAHI GLASS CO LTD , ISHIKAWAJIMA HARIMA HEAVY IND , MITSUBISHI CABLE IND LTD
发明人： YAMADA YOUJI , TAGAMI MINORU , NAKAMURA MASARU , SHIOBARA TORU , TANAKA SHOJI
IPC分类号： C30B15/00 , C30B29/22
摘要： PURPOSE:To prevent a liquid from flowing and to enable crystal growth for a long time by maintaining a crucible filled with an oxide molten liquid in an atmosphere containing vapor of one of silver, silver alloys or silver compds. CONSTITUTION:Y2BaCuO5 (A) 12' is put in the lower part of a crucible 11, on which a powder (B) obtd. by mixing barium carbonate with copper oxide by Ba:Cu molar ratio of 3:4 to 8 and calcining at about 880 deg.C for 40 hours is put. The weight ratio A:B is controlled to 1.2-10 to obtain a crucible body (C). Then, a metal silver of 99wt.% purity is put in an alumina plate 13, in which single crystal magnesia spacers 13 of about 10mm height are made to stand. Then the crucible 11 having the sample above described is put on the spacers 13 and sorrounded with a refractory heat-insulating material and put in a furnace, heated at 960-1000 deg.C so that the atmosphere of the crucible is filled with silver vapor and the BaO-CuO molten liquid 12 for crystal growth of oxide is maintained.

76. 发明专利

JPH06305891A PREPARATION OF OXIDE SUPERCONDUCTOR THIN FILM AND TARGET USED FOR THE SAME METHOD 失效
公开(公告)号：JPH06305891A
公开(公告)日：1994-11-01
申请号：JP9020193
申请日：1993-04-16
申请人： MITSUBISHI MATERIALS CORP , KOKUSAI CHODENDO SANGYO GIJUTS
发明人： HAYASHI KUNIHIKO , FUJINO SHUICHI , TANAKA SHOJI , ENOMOTO YOICHI
IPC分类号： C01G1/00 , C01G3/00 , C04B35/45 , C04B35/653 , C23C14/08 , C23C14/34 , C30B23/02 , C30B29/22 , H01B12/06 , H01B13/00 , H01L39/24
摘要： PURPOSE:To reduce the formation density of particles and obtain an oxide superconductor thin film having a smooth surface by irradiating a target of a specific composition having a high apparent density with a pulsed laser beam and then forming the thin film of the composition on the substrate. CONSTITUTION:A compact of amorphous powder is partially melted and then annealed to produce a target having >=95% apparent density and a composition expressed by the formula (alpha =1mm crystal grain diameter. The target is then irradiated with a pulsed laser beam to prepare a thin film having a composition expressed by the formula on a substrate. Thereby an oxide superconductor thin film having a high apparent density is obtained. The target of a crystal grain size capable of substantially acting as a single crystal on the beam diameter of the pulsed laser beam can be used or the target of a single crystal can further be used to prepare a clear beautiful oxide superconductor thin film without having any particle on the surface thereof.

77. 发明专利

JPH05149720A METHOD AND DEVICE FOR INSPECTING SUPERCONDUCTING OXIDE FILM 失效
公开(公告)号：JPH05149720A
公开(公告)日：1993-06-15
申请号：JP31508991
申请日：1991-11-29
申请人： KOKUSAI CHODENDO SANGYO GIJUTS , HITACHI LTD
发明人： HIGASHIYAMA KAZUHISA , HIRABAYASHI IZUMI , MORISHITA TADATAKA , TANAKA SHOJI
IPC分类号： G01B11/06 , G01B11/30 , H01L39/00 , H01L39/24
摘要： PURPOSE:To measure the forming speed, thickness, and surface smoothness of a superconducting oxide film by irradiating the film with a laser beam while the film is formed on a substrate and measuring the intensity of reflected light from the irradiated section of the film. CONSTITUTION:When a superconducting oxide film 20 formed on a substrate 5 is irradiated with a laser beam 25 having a wavelength lambda, a phase difference delta is produced between a reflected beam 26 form the upper surface of the film 20 and another reflected beam 27 from the lower surface of the film 20. The difference can be expressed by delta=2pi/lambda1.2nd.Cosx+ or -pi, where lambda1, (n), (d), and (x) respectively represent the wavelength of the laser beams 25, refractive index of the film 20, thickness of the film 20, and incident angle of the laser beam 25 in the film 20. It can be understood from the expression that the film thickness (d) at which the intensities of the reflected beams become maximum and minimum are proportional to 1/4 of the wavelength of the laser beam. Therefore, when each peak value is detected, the film thickness (d) and film forming speed can be found. In addition, as the film thickness (d) increases, the vibrational amplitudes of the reflected beams become smaller and the value of a base line decreases. Since the light absorbing amount of the film 25 is a function of the film thickness, the surface smoothness of the film 25 can be found from the intensity reducing speeds of the reflected beams by calculating the function.

78. 发明专利

JPH0597433A OXIDE SUPERCONDUCTING MATERIAL AND ITS PRODUCTION 失效
公开(公告)号：JPH0597433A
公开(公告)日：1993-04-20
申请号：JP25816691
申请日：1991-10-04
申请人： KOKUSAI CHODENDO SANGYO GIJUTS , MATSUSHITA ELECTRIC IND CO LTD , TOHOKU ELECTRIC POWER CO , MITSUBISHI MATERIALS CORP
发明人： ADACHI SEIJI , YAEGASHI YUJI , SAKURAI TAKESHI , YAMAUCHI HISAO , TANAKA SHOJI
IPC分类号： C01G1/00 , C01G3/00 , C04B35/00 , C04B35/45 , H01B12/00 , H01B13/00 , H01L39/24
摘要： PURPOSE:To provide a superconducting material having La2-xAxCaCu2O6 type structure, a narrow transition width (DELTAT) and reduced uneveness in characteristics between samples, to freely control the Tc (zero) of the superconducting material by varying the compsn. and to produce the superconducting material in a short time. CONSTITUTION:A sintered body having a compsn. represented by a chemical formula La2-ySryCa1-xYxCu2O6+ or -0.1 (where 0.03 =1,000 deg.C in an atmosphere under >=100atm partial pressure of oxygen to produce an oxide superconducting material represented by the above-mentioned formula.

79. 发明专利

JPH04357161A OXIDE SUPERCONDUCTOR MATERIAL AND ITS PRODUCTION 失效
公开(公告)号：JPH04357161A
公开(公告)日：1992-12-10
申请号：JP12793991
申请日：1991-05-30
申请人： SUMITOMO ELECTRIC INDUSTRIES , UBE INDUSTRIES , MATSUSHITA ELECTRIC IND CO LTD , KOKUSAI CHODENDO SANGYO GIJUTS
发明人： KANEKO TETSUYUKI , HAMADA KAZUYUKI , ADACHI SEIJI , YAMAUCHI HISAO , TANAKA SHOJI
IPC分类号： C01G1/00 , C01G15/00 , C04B35/00 , C04B35/45 , H01B12/00 , H01B13/00 , H01L39/12 , H01L39/24
摘要： PURPOSE:To provide a Tl-Ba-Ca-Cu-O-based superconductor material capable of showing a stable superconductive state and to provide a method for production thereof. CONSTITUTION:An oxide superconductor material represented by a composition formula of TlxBa2CayCu3Oz (provided that (x), (y) and (z) satisfy 1.5 =3.575nm and having 0 resistivity at >=125K. A method for production of the above-mentioned oxide superconductor material includes a process for blending raw material powders in a mixture ratio satisfying the above-mentioned composition formula, a process for obtaining a sintered material by sintering the resultant mixture powder in an oxygen stream or in the air, and a process for annealing the above-obtained sintered material in a tightly closed atmosphere at 700-800 deg.C for >=10hr.

80. 发明专利

JPH04214027A OXIDE SUPERCONDUCTOR AND PRODUCTION THEREOF 失效
公开(公告)号：JPH04214027A
公开(公告)日：1992-08-05
申请号：JP3640991
申请日：1991-03-01
申请人： KOKUSAI CHODENDO SANGYO GIJUTS , KYOCERA CORP , TOHOKU ELECTRIC POWER CO , FURUKAWA ELECTRIC CO LTD
发明人： KORIYAMA SHINICHI , SAKUYAMA KAZUHIRO , MAEDA TOSHIHIKO , YAMAUCHI HISAO , TANAKA SHOJI
IPC分类号： C01G21/00 , C01G1/00 , C04B35/00 , C04B35/45 , H01B12/00 , H01B13/00 , H01L39/12 , H01L39/24
摘要： PURPOSE:To obtain a superconductor which can be synthesized in an oxidative atmosphere, has the relatively high superconduction critical temp. and has a small oxygen nonstoichiometric property by heating a mixture composed of the compds. of the metals of specific Pb copper oxide superconductors under and at a prescribed oxygen partial pressure and temp. CONSTITUTION:The metals of the superconducting materials contg. the metal oxides have the compsn. of formula, wherein, A is at least one elemental, 0 =0.001atm oxygen partial pressure P and at (860+40logP) deg.C to (1060+40logP) deg.C (P is the oxygen partial pressure).

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