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71. 发明专利

JPS5879139A TESTING METHOD FOR DAMP-PROOF PROPERTY OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS5879139A
公开(公告)日：1983-05-12
申请号：JP17716681
申请日：1981-11-06
申请人： HITACHI LTD
发明人： YOSHIDA TOORU , UETSUKI RIICHI , ISHIDA TOSHIHARU , KOYAMA SHINICHIROU , TAKAHASHI TETSUYA
IPC分类号： G01M99/00 , G01N17/00
摘要： PURPOSE:To make it possible to evaluate in a short time the damp-proof property by leaving a semiconductor device under high temperature and high humidity after permeating into the semiconductor device a solvent that corrodes metalic materials and developing in a short time disconnection due to corrosion in a metallic wiring material. CONSTITUTION:A semiconductor device 1 to be tested in which aluminum wiring is installed is thrown in a high pressure vessel 2, and in this vessel brine 3 with salt of 3-23wt% is added. The pressure in the high-pressure vessel 2 is made at 5atm by a high-pressure air cylinder. In this state the vessel 2 is left for 16hr. Then the brine permeats into the device 1. Next, the device 1 is put in a high- temperature, high-humidify tank 7 of 85 deg.C and 100% RH, and left in it. Then the salt water 3 further permeates into the device 1 to reach eventually the surface of a semiconductor chip. If the chip has a defect that an aluminum wiring is exposed on its surface, the wire will be cut by corrosion in a short time. It is, therefore, possible to evaluate in a short time the damp-proof property and in this way breakage can be avoided because the high temperature condition is not required as in the PCT method.

72. 发明专利

JPS5783153A Drive circuit for gate of gate turn-off thyristor 失效
标题翻译：闸门关闭阀门的驱动电路
公开(公告)号：JPS5783153A
公开(公告)日：1982-05-24
申请号：JP15705280
申请日：1980-11-10
申请人： Hitachi Ltd
发明人： TANAKA MINORU , TAKAHASHI TETSUYA
IPC分类号： H02M1/06 , H03K17/732
CPC分类号： H02M1/06
摘要： PURPOSE:To miniaturize the gate drive circuit by each connecting a turn-on transformer and a turn-off transformer in parallel betwen a gate and a cathode of the GTO (the gate turn-off thyristor) through diodes. CONSTITUTION:When a switch 4 is closed from conditions that switches 4, 5 are opened, the GTO1 is conducted by pulses generated from the turn-on transformer 8. When the switch 4 is opened, pulses in the reverse direction are generated, but the pulses are interrupted by means of the diode 10, and are not applied to the GTO. When the switch 5 is closed, the GTO1 is at off by pulses generated from the turn-off transformer 9. When the switch 5 is opened, pulses in the reverse direction are also generated, but the pulses are interrupted by means of the diode 11, and are not applied to the GTO. Accordingly, the capacity of a power supply of the gate drive circuit can be minimized, and the drive circuit can be miniaturized.
摘要翻译：目的：通过在GTO（栅极截止晶闸管）的栅极和阴极之间并联连接导通变压器和关断变压器，通过二极管来小型化栅极驱动电路。构成：当开关4从开关4,5断开的状态闭合时，GTO1由导通变压器8产生的脉冲传导。当开关4断开时，产生相反方向的脉冲，但是脉冲通过二极管10中断，并且不被施加到GTO。当开关5闭合时，由关断变压器9产生的脉冲使GTO1截止。当开关5断开时，也产生相反方向的脉冲，但脉冲被二极管11中断，不适用于GTO。因此，栅极驱动电路的电源的容量可以最小化，并且可以使驱动电路小型化。

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