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71. 发明专利

JPH0196582A SIGNAL DETECTOR 失效
公开(公告)号：JPH0196582A
公开(公告)日：1989-04-14
申请号：JP25363987
申请日：1987-10-09
申请人： HITACHI LTD
发明人： NISHINO JUICHI , HATANO MUTSUKO , HASEGAWA HARUHIRO , KAWABE USHIO
IPC分类号： G01J1/02 , G01R29/08 , G01T1/16 , G01T1/29 , H01L39/22 , H04N5/335 , H04N5/369 , H04N5/372
摘要： PURPOSE:To realize integration and high functions by detecting an electromagnetic wave by both signal detectors composed of 1st and 2nd superconductor layers respectively and determining the position in a signal detector where the wave is incident. CONSTITUTION:The 1st beltlike superconductor layers 2 are obtained by depositing thin films on a substrate 1 made of single crystal MgO by an RF magnetron sputtering method and then carrying out a heat treatment. Further, the thin films are worked by a chemical etching method while masked with a pattern of photoresist. Then the 2nd superconductor layers 4 are obtained by forming insulating layers 3 of MgO by the RF sputtering method, forming thin films by the RF magnetron sputtering method again and performing a heat treatment as well as the 1st superconductor layers 2. Those 1st and 2nd superconductor layers 2 and 4 are connected at one-terminal sides by a superconductor and then grounded. When an electromagnetic wave is incident on the overlap part between the 1st and 2nd superconductor thin films, a voltage is developed between their terminals and detected to determine the incidence position of the electromagnetic wave.

72. 发明专利

JPS63287078A SUPERCONDUCTING TRANSISTOR 失效
公开(公告)号：JPS63287078A
公开(公告)日：1988-11-24
申请号：JP12122987
申请日：1987-05-20
申请人： HITACHI LTD
发明人： HATANO MUTSUKO , NISHINO JUICHI , HASEGAWA HARUHIRO
IPC分类号： H01L39/22
摘要： PURPOSE:To improve a radiation-proof property of the title transistor and to stabilize its operation, by covering the periphery of the high concentration impurity lead-in part brought into contact with the source-drain electrodes consisting of superconductors and the channel part with an impurity layer of opposite conductivity type. CONSTITUTION:Be ions are implanted in a semiconductor substrate 1 of a p-type GaAs single crystal for forming an impurity lead-in part 8. Next, Si ions are implanted in the shallow part inside the lead-in part 8 for making that part of n-type. Subsequently, after forming a gate insulating film 2 and control electrode 3, the Si ions are led-in for forming a high impurity concentration 7. Next, Nb is piled to be processed by a DC magnetron sputtering method for forming the source-drain electrodes 4 and 5. A superconductive transistor formed by this method has a constant value of a superconductive current and a constant thershold value of voltage and its operation is stable irrespective of dosage and dose time of radiation.

73. 发明专利

JPS63208284A SUPERCONDUCTIVE DEVICE 失效
公开(公告)号：JPS63208284A
公开(公告)日：1988-08-29
申请号：JP4024487
申请日：1987-02-25
申请人： HITACHI LTD
发明人： NISHINO JUICHI , HATANO MUTSUKO , HASEGAWA HARUHIRO , KAWABE USHIO
IPC分类号： H01L39/22
摘要： PURPOSE:To omit a heating step, to simplify the manufacturing process and to improve the reproducibility of the characteristics of a device, by constituting a conductor layer with metalloid or alloy including the metalloid. CONSTITUTION:A normal conductor 13 is which is a superconductor layer, is provided in a superconductor electrode 14 constituting a superconductive device. For the conductor 13, a thin film comprising metalloid or alloy including the metalloid as a component is used instead of a conventional single crystal semiconductor. In detail, Bi or alloy of Bi and Sb is used. In this way, a superconductive device such as a superconductive transistor or Josephson element can be implemented without introducting a heating step intended for improving the crystalline property of a semiconductor. Therefore, not only the superconductive devices can be readily manufactured, but also circuits having high integration density can be implemented by three-dimensional integration.

74. 发明专利

JPS6331181A SUPERCONDUCTIVE TRANSISTOR AND MANUFACTURE THEREOF 失效
公开(公告)号：JPS6331181A
公开(公告)日：1988-02-09
申请号：JP17365086
申请日：1986-07-25
申请人： HITACHI LTD
发明人： NISHINO JUICHI , KAWABE USHIO , HATANO MUTSUKO
IPC分类号： H01L39/22
摘要： PURPOSE:To realize high integration density and stabilization of characteristics by using a self-oxide film of semiconductor for an insulation film and providing a protection film thereto when it is formed in order to protect superconductive characteristic of electrodes from deterioration. CONSTITUTION:A projecting portion is provided on a semiconductor substrate 1 consisting of an N-type Si (100) single crystal by the reactive ion etching by the CF4 gas using the photoresist and thereafter a superconductor 2 consisting of NbN thin film is then formed by the reactive DC magnetron sputtering method. Moreover, a thin film consisting of Si is formed by the RF sputtering using the Ar gas as a protection film 3. After the superconductor 2 and protection film 3 are processed by the lift-off method, the surface of semiconductor substrate 1 is oxidized in the pure oxygen ambience and an insulation film 6 consisting of SiO2 is formed. In this process, a part of protection film 3 is oxidized, forming an Si layer 4 and SiO2 layer 5. Finally, a control electrode 7 consisting of thin film of Nb is formed by the formation and processing of thin film of Nb.

75. 发明专利

JPS6329592A SUPERCONDUCTING ELEMENT 失效
公开(公告)号：JPS6329592A
公开(公告)日：1988-02-08
申请号：JP17153386
申请日：1986-07-23
申请人： HITACHI LTD
发明人： NISHINO JUICHI , HATANO MUTSUKO
IPC分类号： H01L39/22
摘要： PURPOSE:To increase the integration degree and the manufacturing yield as well as the performance as a switch by a method wherein a constant conductor is buried in a recession provided in a substrate comprising insulator, etc., to flatten the surface of substrate immediately before forming a superconducting electrode. CONSTITUTION:A recession 5 is made in substrate 1. The recession 5 is to be around 200mum deep and the width thereof may be around 10-20 times of superconducting coherence length of a normal conductor 2 to be buried in the recession 5. Next, leaving the pattern of a photoresist 4 as it is, an Al 200mum thick is formed on the pattern by resistance heating evaporation. When the pattern of photoresist 4 is removed by an organic solvent, the substrate 1 with the recession 5 filled with the normal conductor 2 can be formed. Through these procedures, the surface of semiconductor 1 can be flattened by making the thickness of normal conductor 2 similar to the depth of recession 5.

76. 发明专利

JP2003209300A MANUFACTURING METHOD FOR SUPERCONDUCTING DEVICE 审中-公开
公开(公告)号：JP2003209300A
公开(公告)日：2003-07-25
申请号：JP2002303716
申请日：2002-10-18
申请人： HITACHI LTD
发明人： NISHINO JUICHI , KAWABE USHIO , TARUYA YOSHINOBU , AIDA TOSHIYUKI , FUKAZAWA TOKUMI , KOMINAMI SHINYA , HATANO MUTSUKO
IPC分类号： H01L39/22 , H01L29/786 , H01L39/24
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method for a superconducting device with uniform characteristics which is operated at or above a liquid nitrogen temperature and is easily manufactured. SOLUTION: In the manufacturing method for the superconducting device, in an oxide superconducting weak-link element composed of superconducting electrodes 3a and 3b and a weak-link part 9 on a single crystal substrate 1, the weak-link part 9 is worked on the single crystal substrate 1, and a superconducting thin film is formed so as to make a C axis vertical to a single crystal substrate surface 1 on the worked single crystal substrate 1. COPYRIGHT: (C)2003,JPO

77. 发明专利

JP2002222959A THIN FILM SEMICONDUCTOR DEVICE AS WELL AS METHOD AND APPARATUS FOR MANUFACTURING POLYCRYSTAL SEMICONDUCTOR THIN FILM 失效
公开(公告)号：JP2002222959A
公开(公告)日：2002-08-09
申请号：JP2001019570
申请日：2001-01-29
申请人： HITACHI LTD
发明人： HATANO MUTSUKO , YAMAGUCHI SHINYA , KIMURA YOSHINOBU , BOKU NARIMOTO
IPC分类号： H01L29/786 , C30B1/00 , H01L21/00 , H01L21/20 , H01L21/26 , H01L21/324 , H01L21/336 , H01L21/36 , H01L21/42 , H01L21/44 , H01L21/4763 , H01L21/477 , H01L21/84 , H01L23/62 , H01L27/01 , H01L27/12 , H01L31/0328 , H01L31/0336 , H01L31/0392 , H01L31/072 , H01L31/109
摘要： PROBLEM TO BE SOLVED: To enhance a quality of a polycrystal semiconductor film formed on an insulating board. SOLUTION: A thin film semiconductor device comprises a gate electrode provided on a first semiconductor layer made of a polycrystal silicon film on the insulating board through a gate insulating film, a channel region provided on the semiconductor layer, a source region and a drain region disposed at both sides of the channel region in a MIS field effect transistor so that at least a main orientation of the channel region is a thin film in plane 110} with respect to the surface of the gate insulating film. Further, it is preferred that a polycrystal semiconductor film having a main orientation in plane 100} of a surface substantially perpendicular to a direction for coupling the source to the drain region is applied to the channel of the semiconductor device. The semiconductor device also comprises a polycrystal semiconductor film of a high quality in which a grain boundary, a grain size, a crystal orientation can be controlled and a roughness of a film and a crystal defect generated in a process of crystallization are reduced, on the insulating board.

78. 发明专利

JP2002222957A THIN FILM TRANSISTOR DEVICE 失效
公开(公告)号：JP2002222957A
公开(公告)日：2002-08-09
申请号：JP2001019026
申请日：2001-01-26
申请人： HITACHI LTD
发明人： YAMAGUCHI SHINYA , HATANO MUTSUKO , SHIBA TAKEO , KIMURA YOSHINOBU , BOKU NARIMOTO
IPC分类号： H01L21/20 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/04 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To realize a thin film transistor device having a high mobility by providing a technique for grain enlarging (pseudo-single crystal) a low temperature poly-Si thin film as an element material of the thin film transistor device in a state in which the thin film is aligned in an plane-orientation having an optimum lattice structure considering an interface distortion from a substrate and controlling a crystal position. SOLUTION: The thin film transistor device having the high mobility is realized by minimizing a distortion energy of the substrate interface by aiming at the fact that a plane 110} of a IV group crystal (any one selected from the group consisting of C, Si, Ge, Sn and Pb or a crystal made of a mixed crystal of them) has a lowest unmarried hand density, selecting the plane- orientation having a growing distance corresponding to a channel length, crystal growing, thereby grain enlarging and forming the channel with crystal grains controlled in the plane-orientation.

79. 发明专利

JPH11121753A SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH11121753A
公开(公告)日：1999-04-30
申请号：JP28016897
申请日：1997-10-14
申请人： HITACHI LTD
发明人： AKIMOTO HAJIME , HATANO MUTSUKO , KIMURA YOSHINOBU
IPC分类号： H01L21/20 , H01L21/336 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To make the on-resistance of a field-effect transistor fully low and to make the off-resistance of the transistor high, by a method wherein crystal grains constituting a polycrystalline semiconductor thin film are formed in such a way that the length of the crytal grains in the direction parallel to a channel current in the transistor becomes longer than that of the crystal grains in the direction vertical to the current. SOLUTION: An amorphous Si thin film 23 on a glass substrate 1 is polycrystallized by a line-shaped excimer laser 22 and is changed into a polycrystalline Si thin film 24. The thin film 23 on the substrate 1 consists of t1s and t2s and the surface of the thin film 23 is not even. That is, recesses and projections are formed in and on the surface of the thin film 23 in parallel to the scanning direction of a laser. Thereby, the thin film 23 is subjected to laser irradiation to melt and a directional property is generated in the thin film 23 in a resolidification of the Si region of the thin film 23. That is, a crystal growth of the Si region in the direction vertical to the scanning direction is impeded by a roughened pattern and a crystallization of the Si region naturally progresses in the direction parallel to the scanning direction. As a result, the growth of crystal grains constituting the thin film 23 can be made to control short in the direction vertical to the scanning direction and long in the direction parallel to the scanning direction.

80. 发明专利

JPH1165533A IMAGE DISPLAY DEVICE AND ITS DRIVE METHOD 失效
公开(公告)号：JPH1165533A
公开(公告)日：1999-03-09
申请号：JP22623297
申请日：1997-08-22
申请人： HITACHI LTD
发明人： AKIMOTO HAJIME , HATANO MUTSUKO
IPC分类号： G02F1/133 , G09G3/20 , G09G3/30 , G09G3/36
摘要： PROBLEM TO BE SOLVED: To reduce the power consumption of a scanning by superimposing and applying a drive voltage, which is used to drive one of the scan lines while conducting at least one of the row and column direction scannings, in the falling portion of the drive voltage, which is used to drive the scan line that proceeds the scan line above. SOLUTION: When the scanning by an input switch scan line 7 is completed, a gate line control line 20 is turned on for a certain period. At that time, gate lines 3a and 3b are electrically connected, and their voltages become VA. The voltage VA is the middle value of the maximum applied voltage and the minimum applied voltage of a gate line 3. Then, the line 20 is turned off. At that time, the voltage of the line 3a is lowered to an off-level, and the voltage of the line 3b is increased to an on-level. This operation is successively repeated. The line 3b does not consume drive power, the voltage of the line 3b is increased to the voltage VA, which is the middle value between the maximum applied voltage and the minimum applied voltage, so that what is required is only the driving equivalent to the residual half voltage.

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