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71. 发明专利

JPH073443A SPUTTERING TARGET AND PRODUCTION THEREOF 失效
公开(公告)号：JPH073443A
公开(公告)日：1995-01-06
申请号：JP16952793
申请日：1993-06-16
申请人： ASAHI GLASS CO LTD
发明人： MITSUI AKIRA
IPC分类号： C22C1/05 , C23C14/34
摘要： PURPOSE:To obtain the gallium containing zinc oxide sputtering target material which is dense, low in electrical resistance and capable of forming a transparent conductive film having high heat resistance even in an oxygen-containing atmosphere by specifying the sintering temp. at hot pressing and the heat treating temp. thereafter. CONSTITUTION:In the gallium-containing zinc oxide sintered body target, after making the sintered body by hot-pressing the raw material powder which forms the zinc oxide containing gallium at 1000-1200 deg.C, the body is heat-treated at 1200 deg.C. In this way, the target is made dense and the gallium is made to form a solid solution on the zinc oxide, and the target which is dense and low in electrical resistance is obtained. The transparent conductive film having high heat resistance even in the oxygen-containing atmosphere is obtained by using the target.

72. 发明专利

JPH06248427A RAW MATERIAL FOR VACUUM VAPOR DEPOSITION 失效
公开(公告)号：JPH06248427A
公开(公告)日：1994-09-06
申请号：JP6286393
申请日：1993-02-26
申请人： ASAHI GLASS CO LTD
发明人： MITSUI AKIRA , SATO KAZUO
IPC分类号： C23C14/08
摘要： PURPOSE:To form a low-resistant transparent conductive film having high heat resistance even in the air by consisting the raw material of a zinc oxide sintered compact contg. Ga, allowing the Ga to exist as a Ga solid soln. ZnO phase and uniformly evaporating Ga atoms and Zn atoms to form the film. CONSTITUTION:This raw material for vacuum vapor deposition consists of the zinc oxide sintered compact contg. the Ga and is obtd. by sintering molded articles of a mixture composed of ZnO powder and Ga2O3 powder in the air. The ratio I1/I2 between the integral intensity I1 of the X-ray diffraction peak of the face (002) of the Ga soln. ZnO phase shifted to a high angle side by solution of the Ga and the integral intensity I2 of the X-ray diffraction peak of the face (002) of the ZnO phase on the low angle side where the Ga does not enter into a solid solution is specified to >=0.2.

73. 发明专利

JPH0625838A SPUTTERING TARGET 失效
公开(公告)号：JPH0625838A
公开(公告)日：1994-02-01
申请号：JP20747092
申请日：1992-07-10
申请人： ASAHI GLASS CO LTD
发明人： MITSUI AKIRA , SATO KAZUO
IPC分类号： C23C14/34
摘要： PURPOSE:To provide the sputtering target which can form a transparent conductive film having high heat resistance by allowing a solutional Ga-containing ZnO phase at a ratio higher by a prescribed ratio than ZnO phase to exist in the target consisting of a sintered body of gallium-contg. zinc oxide. CONSTITUTION:The target consisting of the sintered body of the gallium-contg. zinc oxide is produced by mixing ZnO powder having about =0.2 (I1/I2>=0.2) ratio of the integrated intensity I1 of the X-ray diffraction peak on the (002) phase of the solutional Ga-containing ZnO phase shifted to a high angle side by the solid-solutional gallium and the integrated intensity I2 of the X-ray diffraction peak of the (002) face of the ZnO phase on a low angle side where the Ga is not in solid solution. As a result, the film having extremely high crystallinity is formable and the transparent conductive film having the high heat resistance is obtainable even in an atmosphere contg. oxygen, such as air.

74. 发明专利

JPH05214526A CERAMIC ROTATIONAL CATHODE TARGET AND ITS MANUFACTURE 失效
公开(公告)号：JPH05214526A
公开(公告)日：1993-08-24
申请号：JP25054492
申请日：1992-08-26
申请人： ASAHI GLASS CO LTD
发明人： KIDA OTOJIRO , MITSUI AKIRA
IPC分类号： C23C4/04 , C23C14/34
摘要： PURPOSE:To manufacture a ceramic rotational cathode target by forming a ceramic layer and an undercoat layer on a cylindrical target holder and thereafter thermally spraying ceramic powder having a specified metallic compsn. thereon. CONSTITUTION:A ceramic layer and an undercoat layer increasing the adhesive strength to the ceramic layer are formed on the outer surface of a cylindrical target holder, and after that, ceramic powder essentially consisting of Zr, Ti, Ta, Hf, Mo, W, Nb, Sn, La, In, Cr or the like (hereinafter referred to as metal M) are Si and contg. the total of the metal M and Si in the atomic ratio of 4:96 to 35:65 thereon to form a ceramic layer as a target. In this way, a transparent thin oxide film having high durability can be formed on a substrate of large area at a low temp. at a high speed.

75. 发明专利

JPH03187733A AMORPHOUS OXIDE FILM, PREPARATION THEREOF AND TARGET THEREOF 失效
公开(公告)号：JPH03187733A
公开(公告)日：1991-08-15
申请号：JP4713390
申请日：1990-03-01
申请人： ASAHI GLASS CO LTD
发明人： MITSUI AKIRA , EBISAWA JUNICHI , ANDO HIDEKAZU
IPC分类号： G02B5/20 , B32B7/02 , B32B9/00 , B32B15/01 , B32B15/08 , B32B17/06 , C03C17/34 , C03C17/36 , C23C14/08 , C23C14/10 , C23C14/34
摘要： PURPOSE:To obtain a protective film with good stability and excellent wearing resistance by using an oxide contg. at least one selected from Zr, Ti, Hf, Sn, Ta and In and at least one from B and Si as a main ingredient. CONSTITUTION:An oxide contg. at least one selected from Zr, Ti, Hf, Sn, Ta and In and at least one selected from B and Si is a main ingredient for an amorphous oxide film. This amorphous oxide film is a thin film with excellent scuff resistance, wearing resistance and chem. durability as well as freedom for optical designing. To make the film amorphous and to improve thereby scuff resistance and reliability, it is pref. that the total of oxides selected from B2O3 and SiO2 is especially 20 pts. or more to 100 pts. total of oxides selected from TiO2, ZrO2, HfO2, SnO2, Ta2O3 and In2O3 at a molar ratio. In addition, when B2O3 is used, if the amt. of B2O3 is too much, as reliability, especially chem. durability is lowered, it is pref. that it is 50 pts. or less at a molar ratio based on 100 pts. total of the selected oxides depending on the use. When SiO2 is used, if the amt. of SiO2 is too large, as durability to alkali decreases, it is pref. that the amt. is especially 400 pts. or less at a molar ratio based on 100 pts. total of the selected oxides.

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